MOSFET-Module der Fa. ST MICROELECTONICS
| Hersteller | STMicroelectronics |
| Polarisierung | unipolar |
| Struktur | einzelner Transistor |
| Typ des Halbleitermoduls | Bipolartransistor, MOSFET |
| Symbol | Uds | Id | Idm | Ugs | Rds(on) | Verlustleistung | Gehäuse | Mech. Montage | Elektr. Montage | Verpackung | Technologie |
|---|---|---|---|---|---|---|---|---|---|---|---|
| [V] | [A] | [A] | [V] | [mΩ] | [W] | ||||||
| STE48NM50 | 500 | 30 | 192 | ±30 | 80 | 450 | ISOTOP | schraubbar | schraubbar | Tube | MDmesh, MESH OVERLAY, PowerMesh |
| STE53NC50 | 500 | 33 | 212 | ±30 | 70 | 460 | ISOTOP | schraubbar | schraubbar | Tube | MDmesh, MESH OVERLAY, PowerMesh |
| STE70NM60 | 600 | 70 | 44 | ±30 | 55 | 600 | ISOTOP | schraubbar | schraubbar | Tube | MDmesh, MESH OVERLAY, PowerMesh |
| STE88N65M5 | 650 | 55,7 | 352 | ±25 | 24 | 494 | ISOTOP | schraubbar | schraubbar | Tube | MDmesh, MESH OVERLAY, PowerMesh |
| STE145N65M5 | 650 | 90 | 572 | ±25 | 12 | 679 | ISOTOP | schraubbar | schraubbar | Tube | MDmesh, MESH OVERLAY, PowerMesh |
