Transistores MOSFET, ONSEMI

Transistores MOSFET, ONSEMI, FAN7391MX-ONS, FAN7393AMX-ONS, FAN73912AMX-ONS, FAN73912MX-ONS |ES|
Símbolo designación del fabricante Fabricante Clase de canal Polarización Tecnología Transistor Uds Id Idm Rds(on) Ugs Poder disipado QG Carcasa Montaje Empaquetado Propiedades Estructura Clase de transistor Uso Versión Ualim Isal. Temperatura de trabajo
[V] [A] [A] [Ω] [V] [W] [nC] [V] [A] [°C]
FAN7391MX-ONS FAN7391MX ONSEMI enriquecido unipolar - N-MOSFET - - - - - - - SO14 SMD bobina, cinta - - - - - 12...20 4,5 -40...150
FAN7393AMX-ONS FAN7393AMX ONSEMI enriquecido unipolar - N-MOSFET - - - - - - - SO14 SMD bobina, cinta - - - - - 12...20 2,5 -40...150
FAN73912AMX-ONS FAN73912AMX ONSEMI enriquecido unipolar - N-MOSFET - - - - - - - SO16 SMD bobina, cinta - - - - - 12...20 2...3 -40...125
FAN73912MX-ONS FAN73912MX ONSEMI enriquecido unipolar - N-MOSFET - - - - - - - SO16 SMD bobina, cinta - - - - - 12...20 2...3 -40...125
FAN7388MX-ONS FAN7388MX ONSEMI enriquecido unipolar - N-MOSFET - - - - - - - SO20 SMD bobina, cinta - - - - - 10...20 350m...650m -40...150
FAN73892MX-ONS FAN73892MX ONSEMI enriquecido unipolar - N-MOSFET - - - - - - - SO20 SMD bobina, cinta - - - - - 10...20 350m...650m -40...150
FAN7888MX-ONS FAN7888MX ONSEMI enriquecido unipolar - N-MOSFET - - - - - - - SO20 SMD bobina, cinta - - - - - 12...20 350m...650m -40...150
FAN73893MX-ONS FAN73893MX ONSEMI enriquecido unipolar - N-MOSFET - - - - - - - SO28 SMD bobina, cinta - - - - - 10...20 350m...650m -40...150
FAN7389MX1-ONS FAN7389MX1 ONSEMI enriquecido unipolar - N-MOSFET - - - - - - - SO28 SMD bobina, cinta - - - - - 10...20 350m...650m -40...150
FAN7191MX-F085-ONS FAN7191MX-F085 ONSEMI enriquecido unipolar - N-MOSFET - - - - - - - SO8 SMD bobina, cinta - - - - - - - -
FQD3P50TM FQD3P50TM ONSEMI enriquecido unipolar QFET® P-MOSFET -500 -1,33 - 4,9 ±30 50 23 DPAK SMD bobina, cinta - - - - - - - -
FQD2P40TM FQD2P40TM ONSEMI enriquecido unipolar - P-MOSFET -400 -0,98 -6,24 6,5 ±30 38 13 DPAK SMD bobina, cinta - - - - - - - -
FQB12P20TM FQB12P20TM ONSEMI enriquecido unipolar QFET® P-MOSFET -200 -7,27 - 470m ±30 120 40 D2PAK SMD bobina, cinta - - - - - - - -
FQD7P20TM FQD7P20TM ONSEMI enriquecido unipolar QFET® P-MOSFET -200 -3,6 - 690m ±30 55 25 DPAK SMD bobina, cinta - - - - - - - -
FQD5P20TM FQD5P20TM ONSEMI enriquecido unipolar QFET® P-MOSFET -200 -2,34 - 1,4 ±30 45 13 DPAK SMD bobina, cinta - - - - - - - -
FQPF7P20 FQPF7P20 ONSEMI enriquecido unipolar - P-MOSFET -200 -3,3 -20,8 690m ±30 45 25 TO220FP THT tubo - - - - - - - -
FDMC2523P FDMC2523P ONSEMI enriquecido unipolar QFET® P-MOSFET -150 -1,8 - 3,6 ±30 42 9 MLP8 SMD bobina, cinta - - - - - - - -
FDMC86259P FDMC86259P ONSEMI enriquecido unipolar - P-MOSFET -150 -13 -20 178m ±25 62 32 Power33 SMD bobina, cinta - - - - - - - -
FDMC86261P FDMC86261P ONSEMI enriquecido unipolar - P-MOSFET -150 -9 -20 269m ±25 40 24 Power33 SMD bobina, cinta - - - - - - - -
FDMS86263P FDMS86263P ONSEMI enriquecido unipolar - P-MOSFET -150 -4,4 -70 64m ±25 2,5 63 Power56 SMD bobina, cinta - - - - - - - -
FDS86267P FDS86267P ONSEMI enriquecido unipolar - P-MOSFET -150 -2,2 -34 255m ±25 2,5 11 SO8 SMD bobina, cinta - - - - - - - -
FDN86265P FDN86265P ONSEMI enriquecido unipolar - P-MOSFET -150 -0,8 - 2,2 ±25 1,5 - SuperSOT-3 SMD bobina, cinta - - - - - - - -
FDMA86265P FDMA86265P ONSEMI enriquecido unipolar - P-MOSFET -150 -1 -2 1,2m ±25 2,4 2,8 WDFN6 SMD bobina, cinta - - - - - - - -
FDMC86262P FDMC86262P ONSEMI enriquecido unipolar - P-MOSFET -150 -2 -35 307m ±25 40 9,1 WDFN8 SMD bobina, cinta - - - - - - - -
FQA36P15 FQA36P15 ONSEMI enriquecido unipolar QFET® P-MOSFET -150 -25,5 - 90m ±30 294 105 TO3PN THT tubo - - - - - - - -
FQP15P12 FQP15P12 ONSEMI enriquecido unipolar - P-MOSFET -120 -10,6 -60 200m ±30 100 38 TO220AB THT tubo - - - - - - - -
FQB34P10TM FQB34P10TM ONSEMI enriquecido unipolar QFET® P-MOSFET -100 -23,5 - 60m ±25 155 110 D2PAK SMD bobina, cinta - - - - - - - -
FQB22P10TM FQB22P10TM ONSEMI enriquecido unipolar QFET® P-MOSFET -100 -15,6 - 125m ±30 125 50 D2PAK SMD bobina, cinta - - - - - - - -
FQD8P10TM FQD8P10TM ONSEMI enriquecido unipolar QFET® P-MOSFET -100 -4,2 - 530m ±30 44 15 DPAK SMD bobina, cinta - - - - - - - -
FQD8P10TM-F085 FQD8P10TM-F085 ONSEMI enriquecido unipolar - P-MOSFET -100 -4,2 -26,4 530m ±30 44 15 DPAK SMD bobina, cinta - - - rama automotriz - - - -
FDMS86163P FDMS86163P ONSEMI enriquecido unipolar PowerTrench® P-MOSFET -100 -50 - 36m ±25 104 59 PQFN8 SMD bobina, cinta - - - - - - - -
FDMC86139P FDMC86139P ONSEMI enriquecido unipolar - P-MOSFET -100 -15 - 104m ±25 40 - WDFN8 SMD bobina, cinta - - - - - - - -
NTTFS115P10M5 NTTFS115P10M5 ONSEMI enriquecido unipolar - P-MOSFET -100 -13 -137 120m ±20 16 9,2 WDFN8 SMD bobina, cinta - - - - - - - -
ATP304-TL-H ATP304-TL-H ONSEMI enriquecido unipolar - P-MOSFET -60 -100 - 6,5m ±20 90 - ATPAK SMD bobina, cinta - - - - ESD - - -
ATP113-TL-H ATP113-TL-H ONSEMI enriquecido unipolar - P-MOSFET -60 -35 -100 29,5m ±20 50 55 ATPAK SMD bobina, cinta - - - - ESD - - -
FQB47P06TM-AM002 FQB47P06TM-AM002 ONSEMI enriquecido unipolar QFET® P-MOSFET -60 -33,2 - 26m ±25 160 110 D2PAK SMD bobina, cinta - - - - - - - -
NTB25P06T4G NTB25P06T4G ONSEMI enriquecido unipolar - P-MOSFET -60 -27,5 - 75m ±15 120 - D2PAK SMD bobina, cinta - - - - - - - -
FQB27P06TM FQB27P06TM ONSEMI enriquecido unipolar QFET® P-MOSFET -60 -19,1 - 70m ±25 120 43 D2PAK SMD bobina, cinta - - - - - - - -
FQB11P06TM FQB11P06TM ONSEMI enriquecido unipolar - P-MOSFET -60 -8,05 -45,6 175m ±25 53 17 D2PAK SMD bobina, cinta - - - - - - - -
NTMFS5113PLT1G NTMFS5113PLT1G ONSEMI enriquecido unipolar - P-MOSFET -60 -64 -415 14m ±20 75 83 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS5113PLT1G NVMFS5113PLT1G ONSEMI enriquecido unipolar - P-MOSFET -60 -45 - 14m ±20 75 - DFN5x6 SMD bobina, cinta - - - - - - - -
NVMFS5A160PLZT1G NVMFS5A160PLZT1G ONSEMI enriquecido unipolar - P-MOSFET -60 100 - 7,7m ±20 200 - DFN5x6 SMD bobina, cinta - - - - - - - -
NVMFS5113PLWFT1G NVMFS5113PLWFT1G ONSEMI enriquecido unipolar - P-MOSFET -60 -64 -415 14m ±20 75 83 DFNW5 SMD bobina, cinta - - - - - - - -
NVD5117PLT4G-VF01 NVD5117PLT4G-VF01 ONSEMI enriquecido unipolar - P-MOSFET -60 -61 -419 16m ±20 59 85 DPAK SMD bobina, cinta - - - - - - - -
NTD20P06LT4G NTD20P06LT4G ONSEMI enriquecido unipolar - P-MOSFET -60 -15,5 - 130m ±20 65 26 DPAK SMD bobina, cinta - - - - - - - -
NTD2955T4G NTD2955T4G ONSEMI enriquecido unipolar - P-MOSFET -60 -12 -18 180m ±20 55 15 DPAK SMD bobina, cinta - - - - - - - -
SVD2955T4G SVD2955T4G ONSEMI enriquecido unipolar - P-MOSFET -60 -12 -18 180m ±20 55 15 DPAK SMD bobina, cinta - - - - - - - -
FQD17P06TM FQD17P06TM ONSEMI enriquecido unipolar QFET® P-MOSFET -60 -7,6 - 135m ±25 44 27 DPAK SMD bobina, cinta - - - - - - - -
FQD11P06TM FQD11P06TM ONSEMI enriquecido unipolar QFET® P-MOSFET -60 -5,95 - 185m ±30 38 17 DPAK SMD bobina, cinta - - - - - - - -
FDFS2P106A FDFS2P106A ONSEMI enriquecido unipolar - P-MOSFET -60 -3 - 192m ±20 1,6 - SO8 SMD bobina, cinta - - - - - - - -
FDS9958 FDS9958 ONSEMI enriquecido unipolar PowerTrench® P-MOSFET x2 -60 -2,9 - 190m ±20 2 23 SO8 SMD bobina, cinta - - - - - - - -
NDS9948 NDS9948 ONSEMI enriquecido unipolar PowerTrench® P-MOSFET x2 -60 -2 - 500m ±20 2 13 SO8 SMD bobina, cinta - - - - - - - -
NVF2955T1G NVF2955T1G ONSEMI enriquecido unipolar - P-MOSFET -60 -2,6 - 154m ±20 2,3 14,3 SOT223 SMD bobina, cinta - - - - - - - -
NDT2955 NDT2955 ONSEMI enriquecido unipolar - P-MOSFET -60 -2,5 - 300m ±20 3 - SOT223 SMD bobina, cinta - - - - - - - -
NTF2955T1G NTF2955T1G ONSEMI enriquecido unipolar - P-MOSFET -60 -2 - 185m ±20 2,3 - SOT223 SMD bobina, cinta - - - - - - - -
NVR5124PLT1G NVR5124PLT1G ONSEMI enriquecido unipolar - P-MOSFET -60 -0,67 - 230m ±20 0,19 - SOT23 SMD bobina, cinta - - - - - - - -
NDS0605 NDS0605 ONSEMI enriquecido unipolar - P-MOSFET -60 -0,18 - 5 ±20 0,36 2,5 SOT23 SMD bobina, cinta - - - - - - - -
NTR5105PT1G NTR5105PT1G ONSEMI enriquecido unipolar - P-MOSFET -60 -0,141 - 5 ±20 0,347 - SOT23 SMD bobina, cinta - - - - - - - -
NDS0610 NDS0610 ONSEMI enriquecido unipolar - P-MOSFET -60 -0,12 - 10 - 0,36 - SOT23 SMD bobina, cinta - - - - - - - -
FDN5618P FDN5618P ONSEMI enriquecido unipolar PowerTrench® P-MOSFET -60 -1,25 - 230m ±20 0,46 13,8 SuperSOT-3 SMD bobina, cinta logic level - - - - - - -
FDC5614P FDC5614P ONSEMI enriquecido unipolar PowerTrench® P-MOSFET -60 -3 - 190m ±20 1,6 24 SuperSOT-6 SMD bobina, cinta logic level - - - - - - -
NDC7003P NDC7003P ONSEMI enriquecido unipolar PowerTrench® P-MOSFET x2 -60 -0,34 - 10 ±20 0,96 2,2 SuperSOT-6 SMD bobina, cinta - - - - - - - -
NTGS5120PT1G NTGS5120PT1G ONSEMI enriquecido unipolar - P-MOSFET -60 -2,9 -20 111m ±20 1,4 18,1 TSOP6 SMD bobina, cinta - - - - - - - -
NVGS5120PT1G NVGS5120PT1G ONSEMI enriquecido unipolar - P-MOSFET -60 -2,9 -20 111m ±20 1,1 18,1 TSOP6 SMD bobina, cinta - - - - - - - -
NTTFS5116PLTWG NTTFS5116PLTWG ONSEMI enriquecido unipolar - P-MOSFET -60 -20 -76 52m ±20 20 25 WDFN8 SMD bobina, cinta - - - - - - - -
NTTFS5116PLTAG NTTFS5116PLTAG ONSEMI enriquecido unipolar - P-MOSFET -60 -14 - 52m ±20 20 - WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS5116PLTWG NVTFS5116PLTWG ONSEMI enriquecido unipolar - P-MOSFET -60 -14 -126 52m ±20 10 25 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS5116PLTAG NVTFS5116PLTAG ONSEMI enriquecido unipolar - P-MOSFET -60 -10 - 52m ±20 1,6 - WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS5124PLTAG NVTFS5124PLTAG ONSEMI enriquecido unipolar - P-MOSFET -60 -6 -24 260m ±20 9 6 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS5124PLTWG NVTFS5124PLTWG ONSEMI enriquecido unipolar - P-MOSFET -60 -6 -24 260m ±20 9 6 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS5124PLWFTAG NVTFS5124PLWFTAG ONSEMI enriquecido unipolar - P-MOSFET -60 -6 -24 260m ±20 9 6 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS5116PLWFTAG NVTFS5116PLWFTAG ONSEMI enriquecido unipolar - P-MOSFET -60 -14 -126 52m ±20 10 25 WDFNW8 SMD bobina, cinta - - - - - - - -
NVTFS5116PLWFTWG NVTFS5116PLWFTWG ONSEMI enriquecido unipolar - P-MOSFET -60 -14 -126 52m ±20 10 25 WDFNW8 SMD bobina, cinta - - - - - - - -
FQP47P06 FQP47P06 ONSEMI enriquecido unipolar QFET® P-MOSFET -60 -33,2 - 26m ±25 160 110 TO220AB THT tubo - - - - - - - -
FQP27P06 FQP27P06 ONSEMI enriquecido unipolar QFET® P-MOSFET -60 -27 - 70m ±25 43 TO220AB THT tubo - - - - - - - -
FQP17P06 FQP17P06 ONSEMI enriquecido unipolar QFET® P-MOSFET -60 -12 - 120m ±25 79 27 TO220AB THT tubo - - - - - - - -
FQPF47P06 FQPF47P06 ONSEMI enriquecido unipolar QFET® P-MOSFET -60 -21,2 - 26m ±25 62 110 TO220FP THT tubo - - - - - - - -
FQPF27P06 FQPF27P06 ONSEMI enriquecido unipolar QFET® P-MOSFET -60 -12 - 70m ±25 47 43 TO220FP THT tubo - - - - - - - -
BSS84-FAI BSS84 ONSEMI enriquecido unipolar - P-MOSFET -50 -0,13 - 17 ±20 0,36 1,3 SOT23 SMD bobina, cinta - - - - - - - -
BSS84LT1G BSS84LT1G ONSEMI enriquecido unipolar - P-MOSFET -50 -0,13 - 10 ±20 0,225 2,2 SOT23 SMD bobina, cinta - - - - - - - -
BVSS84LT1G BVSS84LT1G ONSEMI enriquecido unipolar - P-MOSFET -50 -0,13 - 10 ±20 0,225 - SOT23 SMD bobina, cinta - - - - - - - -
NVMFS2D3P04M8LT1G NVMFS2D3P04M8LT1G ONSEMI enriquecido unipolar - P-MOSFET -40 -222 -900 2,2m ±20 103 157 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS3D0P04M8LT1G NVMFS3D0P04M8LT1G ONSEMI enriquecido unipolar - P-MOSFET -40 -183 -900 2,7m ±20 86 124 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS014P04M8LT1G NVMFS014P04M8LT1G ONSEMI enriquecido unipolar - P-MOSFET -40 -52,1 -268 13,8m ±20 30 26,5 DFN5 SMD bobina, cinta - - - - - - - -
NVMFWS014P04M8LT1G NVMFWS014P04M8LT1G ONSEMI enriquecido unipolar - P-MOSFET -40 -52,1 -268 13,8m ±20 30 26,5 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS025P04M8LT1G NVMFS025P04M8LT1G ONSEMI enriquecido unipolar - P-MOSFET -40 -34,6 -204 23m ±20 22,1 16,3 DFN5 SMD bobina, cinta - - - - - - - -
FDWS9509L-F085 FDWS9509L-F085 ONSEMI enriquecido unipolar PowerTrench® P-MOSFET -40 -65 - 13m ±16 107 67 DFN8 SMD bobina, cinta - - - rama automotriz - - - -
NVMFWS2D3P04M8LT1G NVMFWS2D3P04M8LT1G ONSEMI enriquecido unipolar - P-MOSFET -40 -222 -900 2,2m ±20 103 157 DFNW5 SMD bobina, cinta - - - - - - - -
NVMFWS3D0P04M8LT1G NVMFWS3D0P04M8LT1G ONSEMI enriquecido unipolar - P-MOSFET -40 -183 -900 2,7m ±20 86 124 DFNW5 SMD bobina, cinta - - - - - - - -
NVMFS9D6P04M8LT1G NVMFS9D6P04M8LT1G ONSEMI enriquecido unipolar - P-MOSFET -40 -77 -450 9,5m ±20 38 15,04 DFNW5 SMD bobina, cinta - - - - - - - -
FDD4685 FDD4685 ONSEMI enriquecido unipolar PowerTrench® P-MOSFET -40 -32 - 42m ±20 69 27 DPAK SMD bobina, cinta - - - - - - - -
FDD4243 FDD4243 ONSEMI enriquecido unipolar PowerTrench® P-MOSFET -40 -14 - 69m ±20 42 29 DPAK SMD bobina, cinta - - - - - - - -
FDD4141 FDD4141 ONSEMI enriquecido unipolar PowerTrench® P-MOSFET -40 -10,8 - 18,7m ±20 69 50 DPAK SMD bobina, cinta - - - - - - - -
FDS4675 FDS4675 ONSEMI enriquecido unipolar PowerTrench® P-MOSFET -40 -11 - 21m ±20 2,4 56 SO8 SMD bobina, cinta - - - - - - - -
FDS4685 FDS4685 ONSEMI enriquecido unipolar PowerTrench® P-MOSFET -40 -8,2 - 42m ±20 2,5 27 SO8 SMD bobina, cinta - - - - - - - -
NVTFS9D6P04M8LTAG NVTFS9D6P04M8LTAG ONSEMI enriquecido unipolar - P-MOSFET -40 -64 -311 9,5m ±20 38 34,6 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS014P04M8LTAG NVTFS014P04M8LTAG ONSEMI enriquecido unipolar - P-MOSFET -40 -49 -224 13,8m ±20 30 26,5 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS052P04M8LTAG NVTFS052P04M8LTAG ONSEMI enriquecido unipolar - P-MOSFET -40 -13,2 -46 69m ±20 11,5 6,3 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFWS9D6P04M8LTAG NVTFWS9D6P04M8LTAG ONSEMI enriquecido unipolar - P-MOSFET -40 -64 -311 9,5m ±20 38 34,6 WDFNW8 SMD bobina, cinta - - - - - - - -
NVTFWS014P04M8LTAG NVTFWS014P04M8LTAG ONSEMI enriquecido unipolar - P-MOSFET -40 -49 -224 13,8m ±20 30 26,5 WDFNW8 SMD bobina, cinta - - - - - - - -
FDD6637 FDD6637 ONSEMI enriquecido unipolar PowerTrench® P-MOSFET -35 -55 - 19m ±25 57 35 DPAK SMD bobina, cinta - - - - - - - -
NVMFWS003P03P8ZT1G NVMFWS003P03P8ZT1G ONSEMI enriquecido unipolar - P-MOSFET -30 -234 -900 1,8m ±25 84,4 167 - SMD bobina, cinta - - - - - - - -
NTMFS002P03P8ZT1G NTMFS002P03P8ZT1G ONSEMI enriquecido unipolar - P-MOSFET -30 -263 -648 1,4m ±25 138,9 217 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS005P03P8ZT1G NTMFS005P03P8ZT1G ONSEMI enriquecido unipolar - P-MOSFET -30 -164 -597 2,7m ±25 104 112 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS005P03P8ZST1G NTMFS005P03P8ZST1G ONSEMI enriquecido unipolar - P-MOSFET -30 -118 -597 4,4m ±25 104 112 DFN5x6 SMD bobina, cinta - - - - ESD - - -
FDD6685 FDD6685 ONSEMI enriquecido unipolar PowerTrench® P-MOSFET -30 -40 - 30m ±25 52 - DPAK SMD bobina, cinta - - - - - - - -
NTD25P03LT4G NTD25P03LT4G ONSEMI enriquecido unipolar - P-MOSFET -30 -25 - 90m ±15 75 20 DPAK SMD bobina, cinta - - - - - - - -
ECH8310-TL-H ECH8310-TL-H ONSEMI enriquecido unipolar - P-MOSFET -30 -9 -60 17m ±20 1,5 28 ECH8 SMD bobina, cinta - - - - - - - -
ECH8315-TL-H ECH8315-TL-H ONSEMI enriquecido unipolar - P-MOSFET -30 -7,5 -40 25m ±20 1,5 18 ECH8 SMD bobina, cinta - - - - - - - -
ECH8667-TL-H ECH8667-TL-H ONSEMI enriquecido unipolar - P-MOSFET x2 -30 -5,5 -40 39m ±20 1,3 13 ECH8 SMD bobina, cinta - - - - - - - -
MCH6341-TL-W MCH6341-TL-W ONSEMI enriquecido unipolar - P-MOSFET -30 -5 -20 59m ±20 1,5 10 MCPH6 SMD bobina, cinta - - - - - - - -
FDMA530PZ FDMA530PZ ONSEMI enriquecido unipolar PowerTrench® P-MOSFET -30 -6,8 - 65m ±25 2,4 11 MicroFET SMD bobina, cinta - - - - - - - -
FDMC4435BZ FDMC4435BZ ONSEMI enriquecido unipolar PowerTrench® P-MOSFET -30 -18 - 37m ±25 31 53 MLP8 SMD bobina, cinta - - - - - - - -
FDMS6673BZ FDMS6673BZ ONSEMI enriquecido unipolar - P-MOSFET -30 -52 -422 12,5m ±25 73 130 Power56 SMD bobina, cinta - - - - - - - -
FDMS4435BZ FDMS4435BZ ONSEMI enriquecido unipolar - P-MOSFET -30 -18 -50 37m ±25 39 47 Power56 SMD bobina, cinta - - - - - - - -
NTS4173PT1G NTS4173PT1G ONSEMI enriquecido unipolar - P-MOSFET -30 -0,8 -5 150m ±12 0,29 10,1 SC70, SOT323 SMD bobina, cinta - - - - - - - -
FDS6681Z FDS6681Z ONSEMI enriquecido unipolar PowerTrench® P-MOSFET -30 -20 - 6,5m ±25 2,5 260 SO8 SMD bobina, cinta - - - - - - - -
FDS6673BZ FDS6673BZ ONSEMI enriquecido unipolar PowerTrench® P-MOSFET -30 -14,5 - 12m ±25 2,5 65 SO8 SMD bobina, cinta - - - - - - - -
FDS6679AZ FDS6679AZ ONSEMI enriquecido unipolar PowerTrench® P-MOSFET -30 -13 - 14,8m ±25 2,5 96 SO8 SMD bobina, cinta - - - - - - - -
NTMS4177PR2G NTMS4177PR2G ONSEMI enriquecido unipolar - P-MOSFET -30 -11,4 -46 12m ±20 2,5 29 SO8 SMD bobina, cinta - - - - - - - -
FDS6675BZ FDS6675BZ ONSEMI enriquecido unipolar PowerTrench® P-MOSFET -30 -11 - 21,8m ±25 2,5 35 SO8 SMD bobina, cinta - - - - - - - -
FDS4435BZ FDS4435BZ ONSEMI enriquecido unipolar PowerTrench® P-MOSFET -30 -8,8 - 35m ±20 2,5 40 SO8 SMD bobina, cinta - - - - - - - -
SI4435DY SI4435DY ONSEMI enriquecido unipolar PowerTrench® P-MOSFET -30 -8,8 - 35m ±20 2,5 24 SO8 SMD bobina, cinta - - - - - - - -
FDS4935A FDS4935A ONSEMI enriquecido unipolar PowerTrench® P-MOSFET -30 -7 - 35m ±20 1,6 21 SO8 SMD bobina, cinta - - - - - - - -
FDS9435A FDS9435A ONSEMI enriquecido unipolar PowerTrench® P-MOSFET -30 -5,3 - 80m ±25 2,5 14 SO8 SMD bobina, cinta - - - - - - - -
FDS9400A FDS9400A ONSEMI enriquecido unipolar - P-MOSFET -30 -3,4 -10 210m ±25 2,5 3,5 SO8 SMD bobina, cinta - - - - - - - -
FDS4935BZ FDS4935BZ ONSEMI enriquecido unipolar PowerTrench® P-MOSFET x2 -30 -6,9 - 35m ±25 1,6 40 SO8 SMD bobina, cinta - - - - - - - -
NTMD3P03R2G NTMD3P03R2G ONSEMI enriquecido unipolar - P-MOSFET x2 -30 -3,05 -12 85m ±20 1,25 16 SO8 SMD bobina, cinta - - - - - - - -
NDT452AP NDT452AP ONSEMI enriquecido unipolar - P-MOSFET -30 -5 - 130m ±20 3 - SOT223 SMD bobina, cinta - - - - - - - -
NTF5P03T3G NTF5P03T3G ONSEMI enriquecido unipolar - P-MOSFET -30 -4,1 - 100m ±20 3,13 - SOT223 SMD bobina, cinta - - - - - - - -
FDT458P FDT458P ONSEMI enriquecido unipolar PowerTrench® P-MOSFET -30 -3,4 - 210m ±20 3 3,5 SOT223 SMD bobina, cinta - - - - - - - -
NDT456P NDT456P ONSEMI enriquecido unipolar - P-MOSFET -30 7,5/-7,5 - 30m ±20 3 47 SOT223-4 SMD - - - - - - - - -
CPH6350-TL-W CPH6350-TL-W ONSEMI enriquecido unipolar - P-MOSFET -30 -6 -24 86m ±20 1,6 13 SOT23 SMD bobina, cinta - - - - - - - -
NTR4502PT1G NTR4502PT1G ONSEMI enriquecido unipolar - P-MOSFET -30 -1,56 - 350m ±20 1,25 6 SOT23 SMD bobina, cinta - - - - - - - -
NVTR4502PT1G NVTR4502PT1G ONSEMI enriquecido unipolar - P-MOSFET -30 -1,56 - 200m ±20 1,25 - SOT23 SMD bobina, cinta - - - - - - - -
NTR4171PT1G NTR4171PT1G ONSEMI enriquecido unipolar - P-MOSFET -30 -1,5 - 150m ±12 1,25 7,4 SOT23 SMD bobina, cinta - - - - - - - -
CPH6341-TL-W CPH6341-TL-W ONSEMI enriquecido unipolar - P-MOSFET -30 -5 -20 59m ±20 1,6 10 SOT26 SMD bobina, cinta - - - - ESD - - -
FDN360P FDN360P ONSEMI enriquecido unipolar PowerTrench® P-MOSFET -30 -2 - 136m ±20 0,5 9 SuperSOT-3 SMD bobina, cinta logic level - - - - - - -
FDN358P FDN358P ONSEMI enriquecido unipolar PowerTrench® P-MOSFET -30 -1,5 - 200m ±20 0,5 5,6 SuperSOT-3 SMD bobina, cinta logic level - - - - - - -
FDN352AP FDN352AP ONSEMI enriquecido unipolar PowerTrench® P-MOSFET -30 -1,3 - 400m ±25 0,5 1,9 SuperSOT-3 SMD bobina, cinta logic level - - - - - - -
NDS352AP NDS352AP ONSEMI enriquecido unipolar - P-MOSFET -30 -0,9 - 700m ±20 0,5 3 SuperSOT-3 SMD bobina, cinta logic level - - - - - - -
FDC610PZ FDC610PZ ONSEMI enriquecido unipolar PowerTrench® P-MOSFET -30 -4,9 - 75m ±25 1,6 13 SuperSOT-6 SMD bobina, cinta - - - - - - - -
FDC658AP FDC658AP ONSEMI enriquecido unipolar PowerTrench® P-MOSFET -30 -4 - 75m ±25 1,6 8,1 SuperSOT-6 SMD bobina, cinta logic level - - - - - - -
FDC658P FDC658P ONSEMI enriquecido unipolar PowerTrench® P-MOSFET -30 -4 - 80m ±20 1,6 12 SuperSOT-6 SMD bobina, cinta - - - - - - - -
FDC654P FDC654P ONSEMI enriquecido unipolar - P-MOSFET -30 -3,6 - 115m ±20 1,6 - SuperSOT-6 SMD bobina, cinta - - - - - - - -
NVGS4111PT1G NVGS4111PT1G ONSEMI enriquecido unipolar - P-MOSFET -30 -4,7 -15 60m ±20 2 15,25 TSOP6 SMD bobina, cinta - - - - - - - -
NTGS3455T1G NTGS3455T1G ONSEMI enriquecido unipolar - P-MOSFET -30 -3,5 - 100m ±20 2 - TSOP6 SMD bobina, cinta - - - - - - - -
NTGS4111PT1G NTGS4111PT1G ONSEMI enriquecido unipolar - P-MOSFET -30 -2,7 - 60m ±20 1,25 - TSOP6 SMD bobina, cinta - - - - - - - -
NTLJS17D0P03P8ZTAG NTLJS17D0P03P8ZTAG ONSEMI enriquecido unipolar - P-MOSFET -30 -11,7 -47 11,3m ±25 2,4 23 WDFN6 SMD bobina, cinta - - - - - - - -
FDMA3023PZ FDMA3023PZ ONSEMI enriquecido unipolar - P-MOSFET -30 -2,9 - 140m ±8 1,4 - WDFN6 SMD bobina, cinta - - - - - - - -
NTTFS008P03P8Z NTTFS008P03P8Z ONSEMI enriquecido unipolar - P-MOSFET -30 -96 -418 3,8m ±25 50 134 WDFN8 SMD bobina, cinta - - - - - - - -
NTTFS015P03P8ZTAG NTTFS015P03P8ZTAG ONSEMI enriquecido unipolar - P-MOSFET -30 -47,6 -195 7,5m ±25 33,8 37 WDFN8 SMD bobina, cinta - - - - - - - -
NTTFS015P03P8ZTWG NTTFS015P03P8ZTWG ONSEMI enriquecido unipolar - P-MOSFET -30 -47,6 -195 7,5m ±25 33,8 37 WDFN8 SMD bobina, cinta - - - - - - - -
FDMC6675BZ FDMC6675BZ ONSEMI enriquecido unipolar - P-MOSFET -30 -20 -32 27m ±25 36 65 WDFN8 SMD bobina, cinta - - - - - - - -
FDMC6679AZ FDMC6679AZ ONSEMI enriquecido unipolar - P-MOSFET -30 -20 - 15m ±25 41 - WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS012P03P8ZTAG NVTFS012P03P8ZTAG ONSEMI enriquecido unipolar - P-MOSFET -30 -11,7 -47 11,3m ±25 2,4 36 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFWS012P03P8ZTAG NVTFWS012P03P8ZTAG ONSEMI enriquecido unipolar - P-MOSFET -30 -11,7 -47 11,3m ±25 2,4 36 WDFN8 SMD bobina, cinta - - - - - - - -
FDG6304P FDG6304P ONSEMI enriquecido unipolar PowerTrench® P-MOSFET x2 -25 -0,41 - 1,9 ±8 0,3 1,5 SC70-6, SC88, SOT363 SMD bobina, cinta - - - - - - - -
SMMBFJ175LT1G SMMBFJ175LT1G ONSEMI enriquecido unipolar - P-JFET -25 -0,06 - 125 - 0,225 - SOT23 SMD bobina, cinta - - - - - - - -
SMMBFJ177LT1G SMMBFJ177LT1G ONSEMI enriquecido unipolar - P-JFET -25 -0,02 - 300 - 0,225 - SOT23 SMD bobina, cinta - - - - - - - -
FDV304P FDV304P ONSEMI enriquecido unipolar - P-MOSFET -25 -0,46 - 2 ±8 0,35 1,5 SOT23 SMD bobina, cinta logic level - - - - - - -
NTHS4101PT1G NTHS4101PT1G ONSEMI enriquecido unipolar - P-MOSFET -20 -4,8 - 34m ±8 0,7 - ChipFET SMD bobina, cinta - - - - - - - -
NTHD4102PT1G NTHD4102PT1G ONSEMI enriquecido unipolar - P-MOSFET x2 -20 -4,1 -16 80m ±8 2,1 7,6 ChipFET SMD bobina, cinta - - - - - - - -
ECH8654-TL-H ECH8654-TL-H ONSEMI enriquecido unipolar - P-MOSFET -20 -5 -40 38m ±10 1,3 11 ECH8 SMD bobina, cinta - - - - - - - -
FDMA910PZ FDMA910PZ ONSEMI enriquecido unipolar - P-MOSFET -20 -9,4 -45 34m ±8 2,4 29 MicroFET SMD bobina, cinta - - - - - - - -
FDMA507PZ FDMA507PZ ONSEMI enriquecido unipolar PowerTrench® P-MOSFET -20 -7,8 - 35m ±8 2,4 42 MicroFET SMD bobina, cinta - - - - - - - -
FDMA291P FDMA291P ONSEMI enriquecido unipolar PowerTrench® P-MOSFET -20 -6,6 - 98m ±8 2,4 14 MicroFET SMD bobina, cinta - - - - - - - -
FDMA1023PZ FDMA1023PZ ONSEMI enriquecido unipolar PowerTrench® P-MOSFET x2 -20 -3,7 - 195m ±8 1,5 12 MicroFET SMD bobina, cinta - - - - - - - -
FDMA6023PZT FDMA6023PZT ONSEMI enriquecido unipolar PowerTrench® P-MOSFET x2 -20 -3,6 - 170m ±8 1,4 17 MicroFET SMD bobina, cinta - - - - - - - -
FDMA1029PZ FDMA1029PZ ONSEMI enriquecido unipolar - P-MOSFET x2 -20 -3,1 -6 141m ±12 1,4 10 MicroFET SMD bobina, cinta - - - - - - - -
FDMA1027P FDMA1027P ONSEMI enriquecido unipolar PowerTrench® P-MOSFET x2 -20 -3 -6 240m ±8 - 6 MicroFET SMD bobina, cinta - - - - - - - -
FDMC510P FDMC510P ONSEMI enriquecido unipolar PowerTrench® P-MOSFET -20 -18 - 17m ±8 41 116 MLP8 SMD bobina, cinta - - - - - - - -
FDMC6686P FDMC6686P ONSEMI enriquecido unipolar - P-MOSFET -20 -56 -377 6,5m ±8 40 122 Power33 SMD bobina, cinta - - - - - - - -
FDMC4D9P20X8 FDMC4D9P20X8 ONSEMI enriquecido unipolar - P-MOSFET -20 -47 -335 16,4m ±12 40 109 PQFN8 SMD bobina, cinta - - - - - - - -
NTS4101PT1G NTS4101PT1G ONSEMI enriquecido unipolar - P-MOSFET -20 -0,62 - 160m ±8 0,329 6,4 SC70, SOT323 SMD bobina, cinta - - - - - - - -
NTJS4151PT1G NTJS4151PT1G ONSEMI enriquecido unipolar - P-MOSFET -20 -2,4 - 60m ±12 1 - SC70-6, SC88, SOT363 SMD bobina, cinta - - - - - - - -
NTA4151PT1G NTA4151PT1G ONSEMI enriquecido unipolar - P-MOSFET -20 -0,76 - 360m ±6 0,301 - SC75 SMD bobina, cinta - - - - - - - -
NVJS4151PT1G NVJS4151PT1G ONSEMI enriquecido unipolar - P-MOSFET -20 -4,1 -13 67m ±12 1,2 10 SC88 SMD bobina, cinta - - - - - - - -
NTJD4152PT1G NTJD4152PT1G ONSEMI enriquecido unipolar - P-MOSFET x2 -20 -0,88 - 260m ±12 0,181 2,2 SC88 SMD bobina, cinta - - - - ESD - - -
NVJD4152PT1G NVJD4152PT1G ONSEMI enriquecido unipolar - P-MOSFET x2 -20 -0,88 - 260m ±12 0,141 2,2 SC88 SMD bobina, cinta - - - - ESD - - -
NTE4151PT1G NTE4151PT1G ONSEMI enriquecido unipolar - P-MOSFET -20 -0,76 - 1 ±6 313m 2,1 SC89 SMD bobina, cinta - - - - - - - -
FDS4465 FDS4465 ONSEMI enriquecido unipolar PowerTrench® P-MOSFET -20 -13,5 - 10,5m ±8 2,5 120 SO8 SMD bobina, cinta - - - - - - - -
FDS6375 FDS6375 ONSEMI enriquecido unipolar PowerTrench® P-MOSFET -20 -8 - 39m ±8 2,5 36 SO8 SMD bobina, cinta - - - - - - - -
NTMS10P02R2G NTMS10P02R2G ONSEMI enriquecido unipolar - P-MOSFET -20 -8 - 14m ±12 2,5 - SO8 SMD bobina, cinta - - - - - - - -
NTMD6P02R2G NTMD6P02R2G ONSEMI enriquecido unipolar - P-MOSFET -20 -5,7 - 33m ±12 2 - SO8 SMD bobina, cinta - - - - - - - -
NTMS5P02R2G NTMS5P02R2G ONSEMI enriquecido unipolar - P-MOSFET -20 -5,4 -20 33m ±10 1,47 20 SO8 SMD bobina, cinta - - - - - - - -
NVMS5P02R2G NVMS5P02R2G ONSEMI enriquecido unipolar - P-MOSFET -20 -5,4 -20 33m ±10 1,47 20 SO8 SMD bobina, cinta - - - - - - - -
FDS9431A FDS9431A ONSEMI enriquecido unipolar PowerTrench® P-MOSFET -20 -3,5 - 220m ±8 2,5 8,5 SO8 SMD bobina, cinta - - - - - - - -
FDS6975 FDS6975 ONSEMI enriquecido unipolar PowerTrench® P-MOSFET x2 -20 -6 - 51m ±20 2 20 SO8 SMD bobina, cinta - - - - - - - -
FDN304P FDN304P ONSEMI enriquecido unipolar PowerTrench® P-MOSFET -20 -2,4 - 100m ±8 0,5 20 SOT23 SMD bobina, cinta - - - - - - - -
NTR4101PT1G NTR4101PT1G ONSEMI enriquecido unipolar - P-MOSFET -20 -1,7 - 210m ±8 0,21 7,5 SOT23 SMD bobina, cinta - - - - - - - -
NTRV4101PT1G NTRV4101PT1G ONSEMI enriquecido unipolar - P-MOSFET -20 -1,7 - 85m ±8 0,73 - SOT23 SMD bobina, cinta - - - - - - - -
NTR1P02LT1G NTR1P02LT1G ONSEMI enriquecido unipolar - P-MOSFET -20 -1,3 - 220m ±12 0,4 3,1 SOT23 SMD bobina, cinta - - - - - - - -
NTR1P02LT3G NTR1P02LT3G ONSEMI enriquecido unipolar - P-MOSFET -20 -1,3 - 220m ±12 0,4 - SOT23 SMD bobina, cinta - - - - - - - -
NTR1P02T1G NTR1P02T1G ONSEMI enriquecido unipolar - P-MOSFET -20 -1 - 180m ±20 0,4 - SOT23 SMD bobina, cinta - - - - - - - -
NVR1P02T1G NVR1P02T1G ONSEMI enriquecido unipolar - P-MOSFET -20 -1 -2,67 180m ±20 0,4 2,5 SOT23 SMD bobina, cinta - - - - - - - -
NTR0202PLT1G NTR0202PLT1G ONSEMI enriquecido unipolar - P-MOSFET -20 -0,4 - 550m ±20 0,225 2,18 SOT23 SMD bobina, cinta - - - - - - - -
NTZD3152PT1G NTZD3152PT1G ONSEMI enriquecido unipolar - P-MOSFET x2 -20 -0,43 - 2 ±6 0,25 1,7 SOT563 SMD bobina, cinta - - - - - - - -
NTZS3151PT1G NTZS3151PT1G ONSEMI enriquecido unipolar - P-MOSFET -20 -0,76 - 150m ±8 0,21 - SOT563F SMD bobina, cinta - - - - ESD - - -
NTK3139PT1G NTK3139PT1G ONSEMI enriquecido unipolar - P-MOSFET -20 -0,57 - 2,2 ±6 0,45 - SOT723 SMD bobina, cinta - - - - - - - -
FDN302P FDN302P ONSEMI enriquecido unipolar PowerTrench® P-MOSFET -20 -2,4 - 84m ±12 0,5 14 SuperSOT-3 SMD bobina, cinta logic level - - - - - - -
FDN304PZ FDN304PZ ONSEMI enriquecido unipolar PowerTrench® P-MOSFET -20 -2,4 - 100m ±8 0,5 20 SuperSOT-3 SMD bobina, cinta logic level - - - - - - -
FDN340P FDN340P ONSEMI enriquecido unipolar PowerTrench® P-MOSFET -20 -2 -10 110m ±8 0,5 10 SuperSOT-3 SMD bobina, cinta - - - - - - - -
FDN342P FDN342P ONSEMI enriquecido unipolar PowerTrench® P-MOSFET -20 -2 - 140m ±12 0,5 9 SuperSOT-3 SMD bobina, cinta logic level - - - - - - -
FDN338P FDN338P ONSEMI enriquecido unipolar PowerTrench® P-MOSFET -20 -1,6 - 165m ±8 0,5 6,2 SuperSOT-3 SMD bobina, cinta logic level - - - - - - -
FDN308P FDN308P ONSEMI enriquecido unipolar PowerTrench® P-MOSFET -20 -1,5 - 190m ±12 0,5 5,4 SuperSOT-3 SMD bobina, cinta logic level - - - - - - -
FDN336P FDN336P ONSEMI enriquecido unipolar PowerTrench® P-MOSFET -20 -1,3 - 320m ±8 0,5 5 SuperSOT-3 SMD bobina, cinta logic level - - - - - - -
NDS332P NDS332P ONSEMI enriquecido unipolar - P-MOSFET -20 -1 - 740m ±8 0,5 5 SuperSOT-3 SMD bobina, cinta logic level - - - - - - -
FDC608PZ FDC608PZ ONSEMI enriquecido unipolar PowerTrench® P-MOSFET -20 -5,8 - 43m ±12 1,6 23 SuperSOT-6 SMD bobina, cinta - - - - - - - -
FDC602P FDC602P ONSEMI enriquecido unipolar - P-MOSFET -20 -5,5 - 53m ±12 1,6 - SuperSOT-6 SMD bobina, cinta - - - - - - - -
FDC604P FDC604P ONSEMI enriquecido unipolar PowerTrench® P-MOSFET -20 -5,5 - 60m ±8 1,6 30 SuperSOT-6 SMD bobina, cinta - - - - - - - -
FDC638APZ FDC638APZ ONSEMI enriquecido unipolar PowerTrench® P-MOSFET -20 -4,5 - 72m ±12 1,6 12 SuperSOT-6 SMD bobina, cinta - - - - - - - -
FDC638P FDC638P ONSEMI enriquecido unipolar PowerTrench® P-MOSFET -20 -4,5 - 72m ±8 1,6 14 SuperSOT-6 SMD bobina, cinta - - - - - - - -
FDC640P FDC640P ONSEMI enriquecido unipolar PowerTrench® P-MOSFET -20 -4,5 - 80m ±12 1,6 13 SuperSOT-6 SMD bobina, cinta - - - - - - - -
FDC642P FDC642P ONSEMI enriquecido unipolar - P-MOSFET -20 -4 - 105m ±8 1,2 - SuperSOT-6 SMD bobina, cinta - - - - - - - -
FDC634P FDC634P ONSEMI enriquecido unipolar PowerTrench® P-MOSFET -20 -3,5 - 130m ±8 1,6 10 SuperSOT-6 SMD bobina, cinta - - - - - - - -
FDC6312P FDC6312P ONSEMI enriquecido unipolar - P-MOSFET x2 -20 -2,3 - 150m ±8 0,96 - SuperSOT-6 SMD bobina, cinta - - - - - - - -
FDC6310P FDC6310P ONSEMI enriquecido unipolar - P-MOSFET x2 -20 -2,2 - 184m ±12 0,96 - SuperSOT-6 SMD bobina, cinta - - - - - - - -
FDC6306P FDC6306P ONSEMI enriquecido unipolar PowerTrench® P-MOSFET x2 -20 -1,9 - 270m ±8 0,96 4,2 SuperSOT-6 SMD bobina, cinta - - - - - - - -
NTGS3136PT1G NTGS3136PT1G ONSEMI enriquecido unipolar - P-MOSFET -20 -3,6 -20 32m ±8 0,7 18 TSOP6 SMD bobina, cinta - - - - - - - -
NTGS3443T1G NTGS3443T1G ONSEMI enriquecido unipolar - P-MOSFET -20 -3,1 - 100m ±12 1 7,5 TSOP6 SMD bobina, cinta - - - - - - - -
NTGS3441T1G NTGS3441T1G ONSEMI enriquecido unipolar - P-MOSFET -20 -2,35 - 90m ±8 1 - TSOP6 SMD bobina, cinta - - - - - - - -
NTLJS7D2P02P8ZTAG NTLJS7D2P02P8ZTAG ONSEMI enriquecido unipolar - P-MOSFET -20 -13,1 -52 9m ±8 2,4 26,7 WDFN6 SMD bobina, cinta - - - - - - - -
NTLJF3117PT1G NTLJF3117PT1G ONSEMI enriquecido unipolar - P-MOSFET + Schottky -20 -4,1 -20 100m ±8 2,3 5,5 WDFN6 SMD bobina, cinta - - - - - - - -
FDMB2308PZ FDMB2308PZ ONSEMI enriquecido unipolar - P-MOSFET x2 -20 -7 -30 - ±12 2,2 30 WDFN6 SMD bobina, cinta - drenaje conjunto - - - - - -
NTLJD3115PT1G NTLJD3115PT1G ONSEMI enriquecido unipolar - P-MOSFET x2 -20 -4,1 -20 100m ±8 2,3 5,5 WDFN6 SMD bobina, cinta - - - - - - - -
FDD306P FDD306P ONSEMI enriquecido unipolar PowerTrench® P-MOSFET -12 -6,7 - 90m ±8 52 21 DPAK SMD bobina, cinta - - - - - - - -
ECH8308-TL-H ECH8308-TL-H ONSEMI enriquecido unipolar - P-MOSFET -12 -10 -40 12,5m ±10 1,6 26 ECH8 SMD bobina, cinta - - - - - - - -
MCH6351-TL-W MCH6351-TL-W ONSEMI enriquecido unipolar - P-MOSFET -12 -9 -36 16,9m ±10 1,5 20,5 MCPH6 SMD bobina, cinta - - - - - - - -
MCH6353-TL-W MCH6353-TL-W ONSEMI enriquecido unipolar - P-MOSFET -12 -6 -24 35m ±10 1,4 12 MCPH6 SMD bobina, cinta - - - - - - - -
FDME905PT FDME905PT ONSEMI enriquecido unipolar - P-MOSFET -12 -8 -30 97m ±8 2,1 20 MicroFET SMD bobina, cinta - - - - - - - -
FDMC610P FDMC610P ONSEMI enriquecido unipolar - P-MOSFET -12 -80 -200 6,4m ±8 48 99 Power33 SMD bobina, cinta - - - - - - - -
NTJS3151PT1G NTJS3151PT1G ONSEMI enriquecido unipolar - P-MOSFET -12 -2 - 60m ±12 0,625 - SC70-6, SC88, SOT363 SMD bobina, cinta - - - - - - - -
FDN306P FDN306P ONSEMI enriquecido unipolar PowerTrench® P-MOSFET -12 -2,6 - 80m ±8 0,5 17 SuperSOT-3 SMD bobina, cinta logic level - - - - - - -
FDC606P FDC606P ONSEMI enriquecido unipolar PowerTrench® P-MOSFET -12 -6 - 53m ±8 1,6 25 SuperSOT-6 SMD bobina, cinta - - - - - - - -
FDC6318P FDC6318P ONSEMI enriquecido unipolar PowerTrench® P-MOSFET x2 -12 -2,5 - 200m ±8 0,96 8 SuperSOT-6 SMD bobina, cinta - - - - - - - -
FDMA905P FDMA905P ONSEMI enriquecido unipolar - P-MOSFET -12 -10 - 21m ±8 2,4 - WDFN6 SMD bobina, cinta - - - - - - - -
NTLJS2103PTBG NTLJS2103PTBG ONSEMI enriquecido unipolar - P-MOSFET -12 -7,7 -24 25m ±8 3,3 12,8 WDFN6 SMD bobina, cinta - - - - - - - -
NTS2101PT1G NTS2101PT1G ONSEMI enriquecido unipolar - P-MOSFET -8 -1,1 - 100m ±8 0,29 - SC70, SOT323 SMD bobina, cinta - - - - - - - -
NTR2101PT1G NTR2101PT1G ONSEMI enriquecido unipolar - P-MOSFET -8 -3 - 52m ±8 0,96 - SOT23 SMD bobina, cinta - - - - - - - -
ECH8420-TL-H ECH8420-TL-H ONSEMI enriquecido unipolar - N-MOSFET 20 14 50 6,8m ±12 1,6 29 ECH8 SMD bobina, cinta - - - - - - - -
FDME820NZT FDME820NZT ONSEMI enriquecido unipolar - N-MOSFET 20 9 40 24m ±12 2,1 8,5 MicroFET SMD bobina, cinta - - - - - - - -
FDMA1028NZ FDMA1028NZ ONSEMI enriquecido unipolar PowerTrench® N-MOSFET x2 20 3,7 - 90m ±12 1,4 6 MicroFET SMD bobina, cinta - - - - - - - -
FDME1024NZT FDME1024NZT ONSEMI enriquecido unipolar PowerTrench® N-MOSFET x2 20 3,8 - 160m ±8 1,4 4,2 MicroFET SMD bobina, cinta - - - - - - - -
FDMC8554 FDMC8554 ONSEMI enriquecido unipolar - N-MOSFET 20 16,5 36 7,1m ±20 41 62 Power33 SMD bobina, cinta - - - - - - - -
MMBF2201NT1G MMBF2201NT1G ONSEMI enriquecido unipolar - N-MOSFET 20 0,24 750 1 ±20 0,15 1,4 SC70, SOT323 SMD bobina, cinta - - - - - - - -
NTJS3157NT1G NTJS3157NT1G ONSEMI enriquecido unipolar - N-MOSFET 20 2,3 - 60m ±8 1 - SC70-6, SC88, SOT363 SMD bobina, cinta - - - - - - - -
NTJD4401NT1G NTJD4401NT1G ONSEMI enriquecido unipolar - N-MOSFET x2 20 0,46 - 445m ±12 0,27 1,3 SC70-6, SC88, SOT363 SMD bobina, cinta - - - - ESD - - -
NVJD4401NT1G NVJD4401NT1G ONSEMI enriquecido unipolar - N-MOSFET x2 20 0,46 - 375m ±12 0,14 - SC70-6, SC88, SOT363 SMD bobina, cinta - - - - - - - -
FDG6317NZ FDG6317NZ ONSEMI enriquecido unipolar - N-MOSFET x2 20 0,7 - 560m ±12 0,3 - SC70-6, SC88, SOT363 SMD bobina, cinta - - - - ESD - - -
FDG1024NZ FDG1024NZ ONSEMI enriquecido unipolar PowerTrench® N-MOSFET x2 20 1,2 - 389m ±8 0,36 2,6 SC70-6, SC88, SOT363 SMD bobina, cinta - - - - - - - -
NVA4001NT1G NVA4001NT1G ONSEMI enriquecido unipolar - N-MOSFET 20 0,238 0,714 3 ±10 0,3 - SC75 SMD bobina, cinta - - - - ESD - - -
NTA4001NT1G NTA4001NT1G ONSEMI enriquecido unipolar - N-MOSFET 20 0,238 - 3,5 ±10 0,3 - SC75 SMD bobina, cinta - - - - ESD - - -
NTA4153NT1G NTA4153NT1G ONSEMI enriquecido unipolar - N-MOSFET 20 0,915 - 950m ±6 0,3 1,82 SC75 SMD bobina, cinta - - - - ESD - - -
NVA4153NT1G NVA4153NT1G ONSEMI enriquecido unipolar - N-MOSFET 20 0,915 1,3 230m ±6 0,3 1,82 SC75 SMD bobina, cinta - - - - ESD - - -
NTE4153NT1G NTE4153NT1G ONSEMI enriquecido unipolar - N-MOSFET 20 0,66 - 230m ±6 0,3 - SC89 SMD bobina, cinta - - - - - - - -
NVE4153NT1G NVE4153NT1G ONSEMI enriquecido unipolar - N-MOSFET 20 0,915 1,3 230m ±6 0,3 1,82 SC89 SMD bobina, cinta - - - - ESD - - -
NTMD6N02R2G NTMD6N02R2G ONSEMI enriquecido unipolar - N-MOSFET 20 5,5 - 35m ±12 2 - SO8 SMD bobina, cinta - - - - - - - -
FDS9926A FDS9926A ONSEMI enriquecido unipolar PowerTrench® N-MOSFET x2 20 6,5 - 50m ±10 2 9 SO8 SMD bobina, cinta - - - - - - - -
FDS6890A FDS6890A ONSEMI enriquecido unipolar PowerTrench® N-MOSFET x2 20 7,5 - 34m ±8 2 32 SO8 SMD bobina, cinta - - - - - - - -
FDS6898A FDS6898A ONSEMI enriquecido unipolar PowerTrench® N-MOSFET x2 20 9,4 - 21m ±12 2 23 SO8 SMD bobina, cinta - - - - - - - -
FDS6898AZ FDS6898AZ ONSEMI enriquecido unipolar - N-MOSFET x2 20 9,4 38 14m ±12 2 16 SO8 SMD bobina, cinta - - - - - - - -
MMBF0201NLT1G MMBF0201NLT1G ONSEMI enriquecido unipolar - N-MOSFET 20 0,24 - 1,4 ±20 0,225 - SOT23 SMD bobina, cinta - - - - - - - -
MVMBF0201NLT1G MVMBF0201NLT1G ONSEMI enriquecido unipolar - N-MOSFET 20 0,3 0,75 1 ±20 0,225 1,4 SOT23 SMD bobina, cinta - - - - - - - -
MGSF1N02LT1G MGSF1N02LT1G ONSEMI enriquecido unipolar - N-MOSFET 20 0,75 - 90m ±20 0,4 6 SOT23 SMD bobina, cinta - - - - - - - -
MVGSF1N02LT1G MVGSF1N02LT1G ONSEMI enriquecido unipolar - N-MOSFET 20 0,75 2 90m ±20 0,4 6 SOT23 SMD bobina, cinta - - - - - - - -
FDV305N FDV305N ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 20 0,9 - 303m ±12 0,35 1,5 SOT23 SMD bobina, cinta - - - - - - - -
NDS331N NDS331N ONSEMI enriquecido unipolar - N-MOSFET 20 1,3 - 210m/160m ±8 0,5/0,46 3,5 SOT23 SMD bobina, cinta - - - - - - - -
NTR4501NT1G NTR4501NT1G ONSEMI enriquecido unipolar - N-MOSFET 20 2,4 10 105m ±12 1,25 6 SOT23 SMD bobina, cinta - - - - - - - -
NVR4501NT1G NVR4501NT1G ONSEMI enriquecido unipolar - N-MOSFET 20 2,4 10 105m ±12 1,25 6 SOT23 SMD bobina, cinta - - - rama automotriz - - - -
NTR3C21NZT1G NTR3C21NZT1G ONSEMI enriquecido unipolar - N-MOSFET 20 2,6 - 24m ±8 0,47 - SOT23 SMD bobina, cinta - - - - - - - -
MGSF2N02ELT1G MGSF2N02ELT1G ONSEMI enriquecido unipolar - N-MOSFET 20 2,8 - 85m ±8 1,25 3,5 SOT23 SMD bobina, cinta - - - - - - - -
MVSF2N02ELT1G MVSF2N02ELT1G ONSEMI enriquecido unipolar - N-MOSFET 20 2,8 5 85m ±8 1,25 3,5 SOT23 SMD bobina, cinta - - - - - - - -
FDN028N20 FDN028N20 ONSEMI enriquecido unipolar - N-MOSFET 20 6,1 52 28m ±12 1,5 4,3 SOT23 SMD bobina, cinta - - - - - - - -
NTZD3154NT1G NTZD3154NT1G ONSEMI enriquecido unipolar - N-MOSFET x2 20 0,54 - 900m ±7 0,25 1,5 SOT563 SMD bobina, cinta - - - - - - - -
NTK3043NT1G NTK3043NT1G ONSEMI enriquecido unipolar - N-MOSFET 20 0,185 - 3,4 ±10 0,44 - SOT723 SMD bobina, cinta - - - - ESD - - -
NTK3134NT1G NTK3134NT1G ONSEMI enriquecido unipolar - N-MOSFET 20 0,64 - 1,2 ±6 0,45 - SOT723 SMD bobina, cinta - - - - - - - -
NTNS3164NZT5G NTNS3164NZT5G ONSEMI enriquecido unipolar - N-MOSFET 20 0,361 1,082 700m ±8 0,155 0,8 SOT883 SMD bobina, cinta - - - - - - - -
NTNS3166NZT5G NTNS3166NZT5G ONSEMI enriquecido unipolar - N-MOSFET 20 0,361 1,082 700m ±8 0,155 0,8 SOT883 SMD bobina, cinta - - - - - - - -
NTUD3170NZT5G NTUD3170NZT5G ONSEMI enriquecido unipolar - N-MOSFET x2 20 0,16 - 1,5 ±8 0,125 - SOT963 SMD bobina, cinta - - - - ESD - - -
NTUD3174NZT5G NTUD3174NZT5G ONSEMI enriquecido unipolar - N-MOSFET x2 20 0,22 0,8 1,5 ±8 0,125 - SOT963 SMD bobina, cinta - - - - - - - -
FDN335N FDN335N ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 20 1,7 - 120m ±8 500m 5 SuperSOT-3 SMD bobina, cinta logic level - - - - - - -
FDN327N FDN327N ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 20 2 - 120m ±8 0,5 6,3 SuperSOT-3 SMD bobina, cinta logic level - - - - - - -
FDN339AN FDN339AN ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 20 3 - 61m ±8 0,5 10 SuperSOT-3 SMD bobina, cinta logic level - - - - - - -
FDC637AN FDC637AN ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 20 6,2 - 41m ±20 1,6 16 SuperSOT-6 SMD bobina, cinta - - - - - - - -
FDC637BNZ FDC637BNZ ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 20 6,2 - 41m ±20 1,6 12 SuperSOT-6 SMD bobina, cinta - - - - - - - -
FDC6305N FDC6305N ONSEMI enriquecido unipolar PowerTrench® N-MOSFET x2 20 2,7 - 128m ±8 0,96 5 SuperSOT-6 SMD bobina, cinta - - - - - - - -
FDC6401N FDC6401N ONSEMI enriquecido unipolar PowerTrench® N-MOSFET x2 20 3 - 106m ±12 0,96 4,6 SuperSOT-6 SMD bobina, cinta - - - - - - - -
NTGS3130NT1G NTGS3130NT1G ONSEMI enriquecido unipolar - N-MOSFET 20 4,1 19 19 ±8 0,6 13,2 TSOP6 SMD bobina, cinta - - - - - - - -
NTGS3446T1G NTGS3446T1G ONSEMI enriquecido unipolar - N-MOSFET 20 5,1 - 45m ±12 2 - TSOP6 SMD bobina, cinta - - - - - - - -
NVGS3130NT1G NVGS3130NT1G ONSEMI enriquecido unipolar - N-MOSFET 20 5,6 19 24m ±8 1,1 13,2 TSOP6 SMD bobina, cinta - - - - - - - -
NTGD3148NT1G NTGD3148NT1G ONSEMI enriquecido unipolar - N-MOSFET x2 20 2,2 - 70m ±12 0,9 - TSOP6 SMD bobina, cinta - - - - - - - -
FDMA1024NZ FDMA1024NZ ONSEMI enriquecido unipolar - N-MOSFET 20 5 6 75m ±8 1,4 7,3 WDFN6 SMD bobina, cinta - - - - - - - -
FDMA420NZ FDMA420NZ ONSEMI enriquecido unipolar - N-MOSFET 20 5,7 24 44m ±12 2,4 12 WDFN6 SMD bobina, cinta - - - - - - - -
FDMA410NZ FDMA410NZ ONSEMI enriquecido unipolar - N-MOSFET 20 9,5 - 32m ±20 2,4 - WDFN6 SMD bobina, cinta - - - - - - - -
NTLJS3D0N02P8ZTAG NTLJS3D0N02P8ZTAG ONSEMI enriquecido unipolar - N-MOSFET 20 20,2 81 3,8m ±12 2,4 21 WDFN6 SMD bobina, cinta - - - - - - - -
FDZ1323NZ FDZ1323NZ ONSEMI enriquecido unipolar - N-MOSFET 20 10 40 13m ±12 2 17 WLCSP6 SMD bobina, cinta - - - - - - - -
NTNS3193NZT5G NTNS3193NZT5G ONSEMI enriquecido unipolar - N-MOSFET 20 0,224 0,673 1,4 ±8 0,12 0,7 XLLGA3 SMD bobina, cinta - - - - - - - -
NTND31015NZTAG NTND31015NZTAG ONSEMI enriquecido unipolar - N-MOSFET 20 0,2 0,8 1,5 ±8 0,125 - XLLGA6 SMD bobina, cinta - - - - - - - -
NTHD3100CT1G NTHD3100CT1G ONSEMI enriquecido unipolar - N/P-MOSFET 20/-20 3,9/-4,4 12 115m/110m ±12/±8 3,1 7,4 ChipFET SMD bobina, cinta - - par complementario - - - - -
NTHD3102CT1G NTHD3102CT1G ONSEMI enriquecido unipolar - N/P-MOSFET 20/-20 5,5/-4,2 16 37m/83m ±8/±8 0,6 5,8/6,6 ChipFET SMD bobina, cinta - - par complementario - - - - -
FDG6332C FDG6332C ONSEMI enriquecido unipolar PowerTrench® N/P-MOSFET 20/-20 0,7/-0,6 - 442m/700m ±12 0,3 1,5/0,2 SC70-6, SC88, SOT363 SMD bobina, cinta - - par complementario - - - - -
FDS9934C FDS9934C ONSEMI enriquecido unipolar PowerTrench® N/P-MOSFET 20/-20 6,5/-5 - 50m/90m ±12/±10 2 9/12 SO8 SMD bobina, cinta - - par complementario - - - - -
NTZD3155CT1G NTZD3155CT1G ONSEMI enriquecido unipolar - N/P-MOSFET 20/-20 0,39/-0,31 - 400m/500m ±6 0,25 1,5/1,7 SOT563F SMD bobina, cinta - - par complementario - - - - -
NTZD3155CT2G NTZD3155CT2G ONSEMI enriquecido unipolar - N/P-MOSFET 20/-20 0,39/-0,31 - 550m/900m ±6 0,25 - SOT563F SMD bobina, cinta - - par complementario - ESD - - -
NTUD3169CZT5G NTUD3169CZT5G ONSEMI enriquecido unipolar - N/P-MOSFET 20/-20 0,16/-0,14 - 1,5/5 ±8 0,125 - SOT963 SMD bobina, cinta - - par complementario - ESD - - -
FDC6327C FDC6327C ONSEMI enriquecido unipolar - N/P-MOSFET 20/-20 2,7/-1,9 - 130m/270m ±8 0,96 - SuperSOT-6 SMD bobina, cinta - - par complementario - - - - -
FDC6420C FDC6420C ONSEMI enriquecido unipolar PowerTrench® N/P-MOSFET 20/-20 3/-2,2 - 70m/125m ±12 0,9 - SuperSOT-6 SMD bobina, cinta - - par complementario - - - - -
FDME1034CZT FDME1034CZT ONSEMI enriquecido unipolar - N/P-MOSFET 20/-20 3,8/-2,6 - 530m/160m ±8 1,4 7,7/4,2 uDFN6 SMD bobina, cinta - - - - - - - -
NTLJD3119CTBG NTLJD3119CTBG ONSEMI enriquecido unipolar - N/P-MOSFET 20/-20 2,8/-2,4 - 65m/100m ±8 1,5 - WDFN6 SMD bobina, cinta - - par complementario - - - - -
FDMA1032CZ FDMA1032CZ ONSEMI enriquecido unipolar - N/P-MOSFET 20/-20 3,7/-3,1 - 68m/95m ±12 1,4 4/7 WDFN6 SMD bobina, cinta - - par complementario - - - - -
NTND31225CZTAG NTND31225CZTAG ONSEMI enriquecido unipolar - N/P-MOSFET 20/-20 0,22/-0,127 - 1,5/5 ±8 0,125 - XLLGA6 SMD bobina, cinta - - par complementario - - - - -
NTJD4105CT2G NTJD4105CT2G ONSEMI enriquecido unipolar - N/P-MOSFET 20/-8 0,46/-0,558 - 375m/300m ±8, ±12 0,14 - SC70-6, SC88, SOT363 SMD bobina, cinta - - par complementario - - - - -
NTJD4105CT1G NTJD4105CT1G ONSEMI enriquecido unipolar - N/P-MOSFET 20/-8 0,63/-0,755 - 445m/900m ±8, ±12 0,27 3/4 SC70-6, SC88, SOT363 SMD bobina, cinta - - par complementario - ESD - - -
ECH8655R-TL-H ECH8655R-TL-H ONSEMI enriquecido unipolar - N-MOSFET x2 24 9 60 16m ±12 1,4 16,8 ECH8 SMD bobina, cinta - drenaje conjunto - para controlar carga de acumulador ESD - - -
ECH8697R-TL-W ECH8697R-TL-W ONSEMI enriquecido unipolar - N-MOSFET x2 24 10 60 11,6m ±12,5 1,5 6 ECH8 SMD bobina, cinta - drenaje conjunto - para controlar carga de acumulador ESD - - -
ECH8695R-TL-W ECH8695R-TL-W ONSEMI enriquecido unipolar - N-MOSFET x2 24 11 60 9,1m ±12,5 1,4 10 ECH8 SMD bobina, cinta - drenaje conjunto - para controlar carga de acumulador ESD - - -
ECH8693R-TL-W ECH8693R-TL-W ONSEMI enriquecido unipolar - N-MOSFET x2 24 14 60 7m ±12,5 1,4 13 ECH8 SMD bobina, cinta - drenaje conjunto - para controlar carga de acumulador ESD - - -
NTD14N03RT4G NTD14N03RT4G ONSEMI enriquecido unipolar - N-MOSFET 25 2,5 28 117m ±20 20,8 1,8 DPAK SMD bobina, cinta - - - - - - - -
FDMC7570S FDMC7570S ONSEMI enriquecido unipolar - N-MOSFET 25 40 120 2,9m ±20 59 68 PQFN8 SMD bobina, cinta - - - - - - - -
NTTFS1D2N02P1E NTTFS1D2N02P1E ONSEMI enriquecido unipolar - N-MOSFET 25 180 195 1m - 52 24 PQFN8 SMD bobina, cinta - - - - - - - -
FDPC8011S FDPC8011S ONSEMI enriquecido unipolar - N-MOSFET x2 25 20/60 - 6m/1,8m - 1,6/2 19/64 PQFN8 SMD bobina, cinta - asimétrico - - - - - -
FDPC8012S FDPC8012S ONSEMI enriquecido unipolar - N-MOSFET x2 25 35/88 - 7m/2,2m - 1,6/2 8/25 PQFN8 SMD bobina, cinta - asimétrico - - - - - -
FDPC8016S FDPC8016S ONSEMI enriquecido unipolar - N-MOSFET x2 25 60/100 - 3,8m/1,4m ±12 21/42 25/67 PQFN8 SMD bobina, cinta - asimétrico - - - - - -
NVS4409NT1G NVS4409NT1G ONSEMI enriquecido unipolar - N-MOSFET 25 0,75 3 350m ±20 0,28 1,2 SC70 SMD bobina, cinta - - - - - - - -
NTS4409NT1G NTS4409NT1G ONSEMI enriquecido unipolar - N-MOSFET 25 0,75 - 400m ±8 0,28 1,2 SC70, SOT323 SMD bobina, cinta - - - - - - - -
FDG6303N FDG6303N ONSEMI enriquecido unipolar DMOS N-MOSFET x2 25 0,5 1,3 770m - 0,3 2,3 SC70-6, SC88, SOT363 SMD bobina, cinta logic level - - - - - - -
NTJS4405NT1G NTJS4405NT1G ONSEMI enriquecido unipolar - N-MOSFET 25 1,2 3,7 350m ±8 0,63 0,75 SC88 SMD bobina, cinta - - - - - - - -
NVJS4405NT1G NVJS4405NT1G ONSEMI enriquecido unipolar - N-MOSFET 25 1,2 3,7 350m ±8 0,63 0,75 SC88 SMD bobina, cinta - - - - - - - -
NTMFS0D8N02P1ET1G NTMFS0D8N02P1ET1G ONSEMI enriquecido unipolar - N-MOSFET 25 365 762 680µ - 139 52 SO8 SMD bobina, cinta - - - - - - - -
FDV301N FDV301N ONSEMI enriquecido unipolar - N-MOSFET 25 0,22 - 9 ±8 0,35 0,7 SOT23 SMD bobina, cinta logic level - - - - - - -
FDV303N FDV303N ONSEMI enriquecido unipolar - N-MOSFET 25 0,68 - 800m ±8 0,35 2,3 SOT23 SMD bobina, cinta logic level - - - - - - -
FDC6301N FDC6301N ONSEMI enriquecido unipolar PowerTrench® N-MOSFET x2 25 0,22 - 9 ±0,5, ±8 0,9 0,7 SuperSOT-6 SMD bobina, cinta - - - - - - - -
FDC6303N FDC6303N ONSEMI enriquecido unipolar PowerTrench® N-MOSFET x2 25 0,68 - 800m ±8 0,9 2,3 SuperSOT-6 SMD bobina, cinta - - - - - - - -
NTTFS1D8N02P1E NTTFS1D8N02P1E ONSEMI enriquecido unipolar - N-MOSFET 25 150 508 1,3m - 46 17,1 WDFN8 SMD bobina, cinta - - - - - - - -
NTTFSS1D1N02P1E NTTFSS1D1N02P1E ONSEMI enriquecido unipolar - N-MOSFET 25 264 900 850µ ±16 89 60 WDFN9 SMD bobina, cinta - - - - - - - -
FDC6320C FDC6320C ONSEMI enriquecido unipolar - N/P-MOSFET 25/-25 0,22/-0,12 - 9/10 ±8 0,9 - SuperSOT-6 SMD bobina, cinta - - par complementario - - - - -
FDC6321C FDC6321C ONSEMI enriquecido unipolar PowerTrench® N/P-MOSFET 25/-25 0,68/-0,46 - 720m/1220m ±8 0,9 2,3/1,5 SuperSOT-6 SMD bobina, cinta - - par complementario - - - - -
FDB8896 FDB8896 ONSEMI enriquecido unipolar - N-MOSFET 30 80 - 9,4m ±20 80 67 D2PAK SMD bobina, cinta - - - - - - - -
NTMFS4C024NT1G NTMFS4C024NT1G ONSEMI enriquecido unipolar - N-MOSFET 30 21,7 174 2,8m ±20 2,57 14 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS4C13NT1G NTMFS4C13NT1G ONSEMI enriquecido unipolar - N-MOSFET 30 38 106 9,1m ±20 21,6 7,8 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS4C029NT1G NTMFS4C029NT1G ONSEMI enriquecido unipolar - N-MOSFET 30 46 132 5,88m ±20 23,6 9,7 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS4C10NT1G NTMFS4C10NT1G ONSEMI enriquecido unipolar - N-MOSFET 30 46 340 6,95m ±20 23,6 9,7 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS4C028NT1G NTMFS4C028NT1G ONSEMI enriquecido unipolar - N-MOSFET 30 52 146 4,73m ±20 25,5 10,9 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS4C08NT1G NTMFS4C08NT1G ONSEMI enriquecido unipolar - N-MOSFET 30 52 144 5,8m ±20 25,5 8,4 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS4C09NT1G NTMFS4C09NT1G ONSEMI enriquecido unipolar - N-MOSFET 30 52 146 5,8m ±20 25,5 10,9 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS4C59NT1G NTMFS4C59NT1G ONSEMI enriquecido unipolar - N-MOSFET 30 52 146 5,8m ±20 25,5 10,9 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS4C025NT1G NTMFS4C025NT1G ONSEMI enriquecido unipolar - N-MOSFET 30 69 200 3,41m ±20 30,5 11,6 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS4C06NT1G NTMFS4C06NT1G ONSEMI enriquecido unipolar - N-MOSFET 30 69 476 4m ±20 30,5 11,6 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS4C05NT1G NTMFS4C05NT1G ONSEMI enriquecido unipolar - N-MOSFET 30 78 174 3,4m ±20 33 14 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS4C05NT1G NVMFS4C05NT1G ONSEMI enriquecido unipolar - N-MOSFET 30 127 174 2,8m ±20 79 30 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS4C022NT1G NTMFS4C022NT1G ONSEMI enriquecido unipolar - N-MOSFET 30 136 900 1,7m ±20 64 20,8 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS4C03NT1G NTMFS4C03NT1G ONSEMI enriquecido unipolar - N-MOSFET 30 136 500 2,1m ±20 64 20,8 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS4C03NT1G NVMFS4C03NT1G ONSEMI enriquecido unipolar - N-MOSFET 30 159 900 1,7m ±20 77 45,2 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS1D7N03CGT1G NTMFS1D7N03CGT1G ONSEMI enriquecido unipolar - N-MOSFET 30 170 900 1,74m ±20 87 48 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS4C302NT1G NTMFS4C302NT1G ONSEMI enriquecido unipolar - N-MOSFET 30 230 900 1,15m ±20 96 37 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS4C302NWFT1G NVMFS4C302NWFT1G ONSEMI enriquecido unipolar - N-MOSFET 30 241 900 1,15m ±20 115 82 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS1D15N03CGT1G NTMFS1D15N03CGT1G ONSEMI enriquecido unipolar - N-MOSFET 30 245 900 1,15m ±20 124 94 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS0D9N03CGT1G NTMFS0D9N03CGT1G ONSEMI enriquecido unipolar - N-MOSFET 30 298 900 900µ ±20 144 131,4 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS4C020NT1G NTMFS4C020NT1G ONSEMI enriquecido unipolar - N-MOSFET 30 370 900 670µ ±20 161 63 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS4C01NT1G NVMFS4C01NT1G ONSEMI enriquecido unipolar - N-MOSFET 30 370 900 670µ ±20 161 139 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS0D7N03CGT1G NTMFS0D7N03CGT1G ONSEMI enriquecido unipolar - N-MOSFET 30 409 900 650µ ±20 187 147 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS0D6N03CT1G NTMFS0D6N03CT1G ONSEMI enriquecido unipolar - N-MOSFET 30 433 900 620µ ±20 200 65 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS0D55N03CGT1G NTMFS0D55N03CGT1G ONSEMI enriquecido unipolar - N-MOSFET 30 462 900 580µ ±20 199 173 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS0D5N03CT1G NTMFS0D5N03CT1G ONSEMI enriquecido unipolar - N-MOSFET 30 464 900 520µ ±20 200 80 DFN5 SMD bobina, cinta - - - - - - - -
FDMS7650DC FDMS7650DC ONSEMI enriquecido unipolar - N-MOSFET 30 100 200 1,55m ±20 125 206 DFN8 SMD bobina, cinta - - - - - - - -
NVMFS4C05NWFT1G NVMFS4C05NWFT1G ONSEMI enriquecido unipolar - N-MOSFET 30 127 174 2,8m ±20 79 30 DFNW5 SMD bobina, cinta - - - - - - - -
NVMFS4C03NWFT1G NVMFS4C03NWFT1G ONSEMI enriquecido unipolar - N-MOSFET 30 159 900 1,7m ±20 77 45,2 DFNW5 SMD bobina, cinta - - - - - - - -
NVMFS4C01NWFT1G NVMFS4C01NWFT1G ONSEMI enriquecido unipolar - N-MOSFET 30 370 900 670µ ±20 161 139 DFNW5 SMD bobina, cinta - - - - - - - -
NTD20N03L27T4G NTD20N03L27T4G ONSEMI enriquecido unipolar - N-MOSFET 30 16 - 27m ±20 74 - DPAK SMD bobina, cinta - - - - - - - -
FDD6680AS FDD6680AS ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 30 55 100 16m ±20 60 29 DPAK SMD bobina, cinta - - - - - - - -
FDD8880 FDD8880 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 30 58 - 15m ±20 55 - DPAK SMD bobina, cinta - - - - - - - -
FDD8876 FDD8876 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 30 73 - 13m ±20 70 47 DPAK SMD bobina, cinta - - - - - - - -
ECH8663R-TL-H ECH8663R-TL-H ONSEMI enriquecido unipolar - N-MOSFET x2 30 8 60 20,5m ±12 1,4 12,3 ECH8 SMD bobina, cinta - - - - - - - -
NVTYS004N03CLTWG NVTYS004N03CLTWG ONSEMI enriquecido unipolar - N-MOSFET 30 21 369 4,2m ±20 1,6 21 LFPAK33 SMD bobina, cinta - - - - - - - -
NVTYS003N03CLTWG NVTYS003N03CLTWG ONSEMI enriquecido unipolar - N-MOSFET 30 23 446 3,6m ±20 2 26 LFPAK33 SMD bobina, cinta - - - - - - - -
NVTYS002N03CLTWG NVTYS002N03CLTWG ONSEMI enriquecido unipolar - N-MOSFET 30 29 675 2,25m ±20 1,6 37 LFPAK33 SMD bobina, cinta - - - - - - - -
NTMJS0D7N03CGTWG NTMJS0D7N03CGTWG ONSEMI enriquecido unipolar - N-MOSFET 30 410 900 650µ ±20 188 147 LFPAK8 SMD bobina, cinta - - - - - - - -
FDMA7672 FDMA7672 ONSEMI enriquecido unipolar - N-MOSFET 30 9 24 32m ±20 2,4 13 MicroFET SMD bobina, cinta - - - - - - - -
FDMA7630 FDMA7630 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 30 11 24 18m ±20 2,4 22 MicroFET SMD bobina, cinta - - - - - - - -
FDMA2002NZ FDMA2002NZ ONSEMI enriquecido unipolar - N-MOSFET x2 30 2,9 10 268m ±12 1,5 3 MicroFET SMD bobina, cinta - - - - ESD - - -
FDMC0310AS-F127 FDMC0310AS-F127 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 30 21 100 5,8m ±20 36 52 MLP8 SMD bobina, cinta - - - - - - - -
FDML7610S FDML7610S ONSEMI enriquecido unipolar - N-MOSFET 30 30/28 40 12m/6m ±20 2,1/2,2 28/60 MLP8 SMD bobina, cinta - - - - - - - -
FDMC7660S FDMC7660S ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 30 40 200 3,1m ±20 41 66 Power33 SMD bobina, cinta - - - - - - - -
FDMC8010 FDMC8010 ONSEMI enriquecido unipolar - N-MOSFET 30 75 120 2m ±20 54 94 Power33 SMD bobina, cinta - - - - - - - -
FDMC86012 FDMC86012 ONSEMI enriquecido unipolar - N-MOSFET 30 88 230 4,7m ±12 54 38 Power33 SMD bobina, cinta - - - - - - - -
FDMC012N03 FDMC012N03 ONSEMI enriquecido unipolar - N-MOSFET 30 117 688 1,77m ±12 64 110 Power33 SMD bobina, cinta - - - - - - - -
FDMC7200S FDMC7200S ONSEMI enriquecido unipolar PowerTrench® N-MOSFET x2 30 18/13 40...27 30m/13,1m ±20 1,9/2,9 10/22 Power33 SMD bobina, cinta - - - - - - - -
FDMS0310AS FDMS0310AS ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 30 22 100 6m ±20 41 37 Power56 SMD bobina, cinta - - - - - - - -
FDMS0312AS FDMS0312AS ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 30 22 100 6,8m ±20 36 31 Power56 SMD bobina, cinta - - - - - - - -
FDMS7682 FDMS7682 ONSEMI enriquecido unipolar - N-MOSFET 30 22 80 10,4m ±20 33 30 Power56 SMD bobina, cinta - - - - - - - -
FDMS7698 FDMS7698 ONSEMI enriquecido unipolar - N-MOSFET 30 22 50 15m ±20 29 24 Power56 SMD bobina, cinta - - - - - - - -
FDMS8027S FDMS8027S ONSEMI enriquecido unipolar - N-MOSFET 30 22 100 6,8m ±20 36 31 Power56 SMD bobina, cinta - - - - - - - -
FDMS7678 FDMS7678 ONSEMI enriquecido unipolar - N-MOSFET 30 26 70 7,4m ±20 41 39 Power56 SMD bobina, cinta - - - - - - - -
FDMS7680 FDMS7680 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 30 28 80 10,1m ±20 33 28 Power56 SMD bobina, cinta - - - - - - - -
FDMS7692 FDMS7692 ONSEMI enriquecido unipolar - N-MOSFET 30 28 50 13m ±20 27 22 Power56 SMD bobina, cinta - - - - - - - -
FDMS0312S FDMS0312S ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 30 42 90 6,2m ±20 46 46 Power56 SMD bobina, cinta - - - - - - - -
FDMS7660 FDMS7660 ONSEMI enriquecido unipolar - N-MOSFET 30 42 150 3,7m ±20 78 84 Power56 SMD bobina, cinta - - - - - - - -
FDMS7670 FDMS7670 ONSEMI enriquecido unipolar - N-MOSFET 30 42 150 5,3m ±20 62 56 Power56 SMD bobina, cinta - - - - - - - -
FDMS0300S FDMS0300S ONSEMI enriquecido unipolar - N-MOSFET 30 49 180 2,5m ±20 96 133 Power56 SMD bobina, cinta - - - - - - - -
FDMS0308AS FDMS0308AS ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 30 49 100 4m ±20 50 47 Power56 SMD bobina, cinta - - - - - - - -
FDMS0309AS FDMS0309AS ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 30 49 100 4,8m ±20 50 47 Power56 SMD bobina, cinta - - - - - - - -
FDMS8023S FDMS8023S ONSEMI enriquecido unipolar - N-MOSFET 30 49 100 3,3m ±20 59 57 Power56 SMD bobina, cinta - - - - - - - -
FDMS8025S FDMS8025S ONSEMI enriquecido unipolar - N-MOSFET 30 49 100 4m ±20 50 47 Power56 SMD bobina, cinta - - - - - - - -
FDMS8820 FDMS8820 ONSEMI enriquecido unipolar - N-MOSFET 30 101 634 2,8m ±20 78 88 Power56 SMD bobina, cinta - - - - - - - -
FDMS8018 FDMS8018 ONSEMI enriquecido unipolar - N-MOSFET 30 110 680 2,7m ±20 83 61 Power56 SMD bobina, cinta - - - - - - - -
FDMS7650 FDMS7650 ONSEMI enriquecido unipolar - N-MOSFET 30 169 1210 1,7m ±20 104 209 Power56 SMD bobina, cinta - - - - - - - -
FDMS8050 FDMS8050 ONSEMI enriquecido unipolar - N-MOSFET 30 200 400 0,9m ±20 156 285 Power56 SMD bobina, cinta - - - - - - - -
FDMS8050ET30 FDMS8050ET30 ONSEMI enriquecido unipolar - N-MOSFET 30 299 1914 0,9m ±20 180 285 Power56 SMD bobina, cinta - - - - - - - -
FDMC8651 FDMC8651 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 30 20 - 9,3m ±12 41 27,2 PQFN8 SMD bobina, cinta - - - - - - - -
FDMS7694 FDMS7694 ONSEMI enriquecido unipolar - N-MOSFET 30 20 50 13,3m ±20 27 22 PQFN8 SMD bobina, cinta - - - - - - - -
FDMS7692A FDMS7692A ONSEMI enriquecido unipolar - N-MOSFET 30 28 50 12m ±20 27 22 PQFN8 SMD bobina, cinta - - - - - - - -
FDMC3020DC FDMC3020DC ONSEMI enriquecido unipolar - N-MOSFET 30 40 100 9,1m ±20 50 23 PQFN8 SMD bobina, cinta - - - - - - - -
FDMC7660 FDMC7660 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 30 40 - 3,3m ±20 41 86 PQFN8 SMD bobina, cinta - - - - - - - -
FDMS0306AS FDMS0306AS ONSEMI enriquecido unipolar - N-MOSFET 30 49 100 3,3m ±20 59 57 PQFN8 SMD bobina, cinta - - - - - - - -
FDMC8010DC FDMC8010DC ONSEMI enriquecido unipolar - N-MOSFET 30 99 788 1,89m ±20 50 94 PQFN8 SMD bobina, cinta - - - - - - - -
FDPC8013S FDPC8013S ONSEMI enriquecido unipolar - N-MOSFET x2 30 20/55 - 6,4m/1,9m ±20 1,6/2 13/44 PQFN8 SMD bobina, cinta - asimétrico - - - - - -
FDPC5030SG FDPC5030SG ONSEMI enriquecido unipolar - N-MOSFET x2 30 56/84 - 5m/2,4m ±20/±12 23/25 17/39 PQFN8 SMD bobina, cinta - asimétrico - - - - - -
NVS4001NT1G NVS4001NT1G ONSEMI enriquecido unipolar - N-MOSFET 30 0,27 0,8 1,5 ±20 0,33 0,9 SC70 SMD bobina, cinta - - - - - - - -
NTS4001NT1G NTS4001NT1G ONSEMI enriquecido unipolar - N-MOSFET 30 0,2 - 1,5 ±20 0,33 - SC70, SOT323 SMD bobina, cinta - - - - - - - -
NTJD4001NT1G NTJD4001NT1G ONSEMI enriquecido unipolar - N-MOSFET x2 30 0,18 - 1,5 ±20 0,272 - SC70-6, SC88, SOT363 SMD bobina, cinta - - - - - - - -
NVTJD4001NT1G NVTJD4001NT1G ONSEMI enriquecido unipolar - N-MOSFET x2 30 0,18 - 1,5 ±20 0,272 - SC70-6, SC88, SOT363 SMD bobina, cinta - - - - - - - -
NTA7002NT1G NTA7002NT1G ONSEMI enriquecido unipolar - N-MOSFET 30 0,154 - 7 ±10 0,3 - SC75 SMD bobina, cinta - - - - - - - -
NVTA7002NT1G NVTA7002NT1G ONSEMI enriquecido unipolar - N-MOSFET 30 0,154 0,618 7 ±10 0,3 - SC75 SMD bobina, cinta - - - - ESD - - -
FDS6690A FDS6690A ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 30 11 - 22m ±20 2,5 16 SO8 SMD bobina, cinta - - - - - - - -
FDS8880 FDS8880 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 30 11,6 - 16,3m ±20 2,5 30 SO8 SMD bobina, cinta - - - - - - - -
FDS6680A FDS6680A ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 30 12,5 - 15m ±20 2,5 23 SO8 SMD bobina, cinta - - - - - - - -
FDS8896 FDS8896 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 30 15 110 6m ±20 2,5 67 SO8 SMD bobina, cinta - - - - - - - -
NTMFS0D8N03CT1G NTMFS0D8N03CT1G ONSEMI enriquecido unipolar - N-MOSFET 30 337 900 740µ ±20 150 50 SO8 SMD bobina, cinta - - - - - - - -
NTMD4N03R2G NTMD4N03R2G ONSEMI enriquecido unipolar - N-MOSFET x2 30 4 12 60m ±20 2 8 SO8 SMD bobina, cinta - - - - - - - -
NVMD4N03R2G NVMD4N03R2G ONSEMI enriquecido unipolar - N-MOSFET x2 30 4 12 60m ±20 2 8 SO8 SMD bobina, cinta - - - - - - - -
FDS6930A FDS6930A ONSEMI enriquecido unipolar - N-MOSFET x2 30 5,5 - 68m ±20 2 - SO8 SMD bobina, cinta - - - - - - - -
FDS8984 FDS8984 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET x2 30 7 - 32m ±20 1,6 13 SO8 SMD bobina, cinta - - - - - - - -
FDT457N FDT457N ONSEMI enriquecido unipolar - N-MOSFET 30 5 - 100m ±20 3 5,9 SOT223 SMD bobina, cinta - - - - - - - -
FDT439N FDT439N ONSEMI enriquecido unipolar - N-MOSFET 30 6,3 - 72m ±8 3 15 SOT223 SMD bobina, cinta - - - - - - - -
NDT451AN NDT451AN ONSEMI enriquecido unipolar - N-MOSFET 30 7,2 - 90m ±20 3 30 SOT223 SMD bobina, cinta - - - - - - - -
NVR4003NT3G NVR4003NT3G ONSEMI enriquecido unipolar - N-MOSFET 30 0,37 - 1,5 ±20 0,69 - SOT23 SMD bobina, cinta - - - - - - - -
NTR4003NT1G NTR4003NT1G ONSEMI enriquecido unipolar - N-MOSFET 30 0,4 - 1,5 ±20 0,83 1,15 SOT23 SMD bobina, cinta - - - - - - - -
NTR4003NT3G NTR4003NT3G ONSEMI enriquecido unipolar - N-MOSFET 30 0,4 - 1,5 ±20 0,83 1,15 SOT23 SMD bobina, cinta - - - - - - - -
NVTR4503NT1G NVTR4503NT1G ONSEMI enriquecido unipolar - N-MOSFET 30 1,5 - 140m ±20 0,73 7 SOT23 SMD bobina, cinta - - - - - - - -
NDS355AN NDS355AN ONSEMI enriquecido unipolar - N-MOSFET 30 1,7 - 230m ±20 0,5 5 SOT23 SMD bobina, cinta logic level - - - - - - -
NTR4170NT1G NTR4170NT1G ONSEMI enriquecido unipolar - N-MOSFET 30 1,7 - 55m ±12 0,48 - SOT23 SMD bobina, cinta - - - - - - - -
MGSF1N03LT1G MGSF1N03LT1G ONSEMI enriquecido unipolar - N-MOSFET 30 2,1 - 80m ±20 0,69 6 SOT23 SMD bobina, cinta - - - - - - - -
MVGSF1N03LT1G MVGSF1N03LT1G ONSEMI enriquecido unipolar - N-MOSFET 30 2,1 - 80m ±20 0,69 6 SOT23 SMD bobina, cinta - - - - - - - -
NTR4503NT1G NTR4503NT1G ONSEMI enriquecido unipolar - N-MOSFET 30 2,5 10 110m ±20 0,73 3,6 SOT23 SMD bobina, cinta - - - - - - - -
FDN537N FDN537N ONSEMI enriquecido unipolar - N-MOSFET 30 8 25 30m ±20 1,5 8,4 SOT23 SMD bobina, cinta - - - - - - - -
FDN357N FDN357N ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 30 1,9 - 140m ±20 0,5 5,9 SuperSOT-3 SMD bobina, cinta logic level - - - - - - -
FDN337N FDN337N ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 30 2,2 - 80m ±8 0,5 9 SuperSOT-3 SMD bobina, cinta logic level - - - - - - -
FDN359AN FDN359AN ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 30 2,7 - 75m ±20 0,5 7 SuperSOT-3 SMD bobina, cinta logic level - - - - - - -
FDC653N FDC653N ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 30 5 - 56m ±20 1,6 16 SuperSOT-6 SMD bobina, cinta - - - - - - - -
FDC645N FDC645N ONSEMI enriquecido unipolar - N-MOSFET 30 5,5 - 48m ±12 1,6 - SuperSOT-6 SMD bobina, cinta - - - - - - - -
FDC655BN FDC655BN ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 30 6,3 - 36m ±20 1,6 13 SuperSOT-6 SMD bobina, cinta - - - - - - - -
FDC8886 FDC8886 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 30 6,5 25 36m ±20 1,6 7,4 SuperSOT-6 SMD bobina, cinta - - - - - - - -
FDC8878 FDC8878 ONSEMI enriquecido unipolar - N-MOSFET 30 8 - 21m ±20 1,6 - SuperSOT-6 SMD bobina, cinta - - - - - - - -
FDC6561AN FDC6561AN ONSEMI enriquecido unipolar PowerTrench® N-MOSFET x2 30 2,5 - 152m ±20 0,96 3,2 SuperSOT-6 SMD bobina, cinta - - - - - - - -
NTGS4141NT1G NTGS4141NT1G ONSEMI enriquecido unipolar - N-MOSFET 30 3,6 - 25m ±20 1 - TSOP6 SMD bobina, cinta - - - - - - - -
NVGS4141NT1G NVGS4141NT1G ONSEMI enriquecido unipolar - N-MOSFET 30 7 45 25m ±20 1 12 TSOP6 SMD bobina, cinta - - - - - - - -
NTLUS030N03CTAG NTLUS030N03CTAG ONSEMI enriquecido unipolar - N-MOSFET 30 6,9 20 18m ±20 1,49 3,7 uDFN6 SMD bobina, cinta - - - - - - - -
NTLUS020N03CTAG NTLUS020N03CTAG ONSEMI enriquecido unipolar - N-MOSFET 30 8,2 24 13m ±20 1,52 5 uDFN6 SMD bobina, cinta - - - - - - - -
NTLJD4116NT1G NTLJD4116NT1G ONSEMI enriquecido unipolar - N-MOSFET 30 4,6 20 70m ±8 1,5 5,4 WDFN6 SMD bobina, cinta - - - - - - - -
NTLJS4114NT1G NTLJS4114NT1G ONSEMI enriquecido unipolar - N-MOSFET 30 7,8 28 35m ±12 1,92 8,5 WDFN6 SMD bobina, cinta - - - - - - - -
NTLJS4114NTAG NTLJS4114NTAG ONSEMI enriquecido unipolar - N-MOSFET 30 7,8 28 35m ±12 1,92 8,5 WDFN6 SMD bobina, cinta - - - - - - - -
FDMA8878 FDMA8878 ONSEMI enriquecido unipolar - N-MOSFET 30 10 40 21m ±20 2,4 12 WDFN6 SMD bobina, cinta - - - - - - - -
NTLJS5D0N03CTAG NTLJS5D0N03CTAG ONSEMI enriquecido unipolar - N-MOSFET 30 18,8 75 4,38m ±20 2,4 8 WDFN6 SMD bobina, cinta - - - - - - - -
NTLJF4156NT1G NTLJF4156NT1G ONSEMI enriquecido unipolar - N-MOSFET + Schottky 30 4,6 20 70m ±8 1,5 5,4 WDFN6 SMD bobina, cinta - - - - - - - -
NTLJF4156NTAG NTLJF4156NTAG ONSEMI enriquecido unipolar - N-MOSFET + Schottky 30 4,6 20 70m ±8 1,5 5,4 WDFN6 SMD bobina, cinta - - - - - - - -
FDMC7200 FDMC7200 ONSEMI enriquecido unipolar - N-MOSFET 30 8 40 35,5m/18m ±20 1,9/2,2 10/22 WDFN8 SMD bobina, cinta - - - - - - - -
FDMC7692 FDMC7692 ONSEMI enriquecido unipolar - N-MOSFET 30 16 40 12m ±20 29 29 WDFN8 SMD bobina, cinta - - - - - - - -
FDMC8878 FDMC8878 ONSEMI enriquecido unipolar - N-MOSFET 30 16,5 - 20m ±20 31 - WDFN8 SMD bobina, cinta - - - - - - - -
FDMC7672S FDMC7672S ONSEMI enriquecido unipolar - N-MOSFET 30 18 45 9m ±20 36 42 WDFN8 SMD bobina, cinta - - - - - - - -
FDMC7680 FDMC7680 ONSEMI enriquecido unipolar - N-MOSFET 30 18 45 9,5m ±20 31 42 WDFN8 SMD bobina, cinta - - - - - - - -
FDMC7672 FDMC7672 ONSEMI enriquecido unipolar - N-MOSFET 30 20 50 7m ±20 33 57 WDFN8 SMD bobina, cinta - - - - - - - -
FDMC7696 FDMC7696 ONSEMI enriquecido unipolar - N-MOSFET 30 20 50 15,7m ±20 25 22 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS4C05NTAG NVTFS4C05NTAG ONSEMI enriquecido unipolar - N-MOSFET 30 22 433 3,6m ±20 34 31 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS4C05NWFTAG NVTFS4C05NWFTAG ONSEMI enriquecido unipolar - N-MOSFET 30 22 433 3,6m ±20 34 31 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS4C25NTAG NVTFS4C25NTAG ONSEMI enriquecido unipolar - N-MOSFET 30 22,1 90 17m ±20 8,6 10,3 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS4C25NWFTAG NVTFS4C25NWFTAG ONSEMI enriquecido unipolar - N-MOSFET 30 22,1 90 17m ±20 8,6 10,3 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS4C02NTAG NVTFS4C02NTAG ONSEMI enriquecido unipolar - N-MOSFET 30 28,3 500 2,25m ±20 1,6 45 WDFN8 SMD bobina, cinta - - - - - - - -
NTTFS4C13NTAG NTTFS4C13NTAG ONSEMI enriquecido unipolar - N-MOSFET 30 38 68 9,4m ±20 21,5 15,2 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS4C13NTAG NVTFS4C13NTAG ONSEMI enriquecido unipolar - N-MOSFET 30 40 152 9,4m ±20 13 15,2 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS4C13NTWG NVTFS4C13NTWG ONSEMI enriquecido unipolar - N-MOSFET 30 40 152 9,4m ±20 13 15,2 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS4C13NWFTAG NVTFS4C13NWFTAG ONSEMI enriquecido unipolar - N-MOSFET 30 40 152 9,4m ±20 13 15,2 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS4C13NWFTWG NVTFS4C13NWFTWG ONSEMI enriquecido unipolar - N-MOSFET 30 40 152 9,4m ±20 13 15,2 WDFN8 SMD bobina, cinta - - - - - - - -
NTTFS4C10NTAG NTTFS4C10NTAG ONSEMI enriquecido unipolar - N-MOSFET 30 44 128 7,4m ±20 23,6 18,6 WDFN8 SMD bobina, cinta - - - - - - - -
NTTFS4C08NTAG NTTFS4C08NTAG ONSEMI enriquecido unipolar - N-MOSFET 30 52 144 5,9m ±20 25,5 18,2 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS4C08NTWG NVTFS4C08NTWG ONSEMI enriquecido unipolar - N-MOSFET 30 55 253 5,9m ±20 31 18,2 WDFN8 SMD bobina, cinta - - - - - - - -
NTTFS4C06NTAG NTTFS4C06NTAG ONSEMI enriquecido unipolar - N-MOSFET 30 67 166 4,2m ±20 31 11,6 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS4C06NTAG NVTFS4C06NTAG ONSEMI enriquecido unipolar - N-MOSFET 30 71 367 4,2m ±20 37 26 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS4C06NTWG NVTFS4C06NTWG ONSEMI enriquecido unipolar - N-MOSFET 30 71 367 4,2m ±20 37 26 WDFN8 SMD bobina, cinta - - - - - - - -
NTTFS4C05NTAG NTTFS4C05NTAG ONSEMI enriquecido unipolar - N-MOSFET 30 75 174 3,6m ±20 33 14,5 WDFN8 SMD bobina, cinta - - - - - - - -
NTTFS4C02NTAG NTTFS4C02NTAG ONSEMI enriquecido unipolar - N-MOSFET 30 164 663 2,25m ±20 2,5 20 WDFN8 SMD bobina, cinta - - - - - - - -
NVLJWS013N03CLTAG NVLJWS013N03CLTAG ONSEMI enriquecido unipolar - N-MOSFET 30 35 116 13m ±20 13 10 WDFNW6 SMD bobina, cinta - - - - - - - -
NVTFS4C10NWFTAG NVTFS4C10NWFTAG ONSEMI enriquecido unipolar - N-MOSFET 30 47 196 7,4m ±20 14 19,3 WDFNW8 SMD bobina, cinta - - - - - - - -
NTTFD2D8N03P1E NTTFD2D8N03P1E ONSEMI enriquecido unipolar - N-MOSFET x2 30 80 - 2,5m - 26 9,5/9,3 WQFN12 SMD bobina, cinta - - - - - - - -
FDP8860 FDP8860 ONSEMI enriquecido unipolar - N-MOSFET 30 80 556 3,8m ±20 254 222 TO220AB THT tubo - - - - - - - -
ECH8660-TL-H ECH8660-TL-H ONSEMI enriquecido unipolar - N/P-MOSFET 30/-30 4,5/-4,5 - 59m ±20 1,3 4,4 ECH8 SMD bobina - - par complementario - - - - -
ECH8661-TL-H ECH8661-TL-H ONSEMI enriquecido unipolar - N/P-MOSFET 30/-30 7/-5,5 - 24m/39m ±20 1,3 11,8/13 ECH8 SMD bobina - - par complementario - - - - -
FDS8858CZ FDS8858CZ ONSEMI enriquecido unipolar PowerTrench® N/P-MOSFET 30/-30 8,6/-7,3 - 28,8m/24,3m ±25/±20 2 46/24 SO8 SMD bobina, cinta - - par complementario - - - - -
FDC6333C FDC6333C ONSEMI enriquecido unipolar PowerTrench® N/P-MOSFET 30/-30 2,5/-2 - 150m/220m ±16/±25 0,96 6,6/5,7 SuperSOT-6 SMD bobina, cinta - - par complementario - - - - -
NTGD4167CT1G NTGD4167CT1G ONSEMI enriquecido unipolar - N/P-MOSFET 30/-30 1,9/-1,4 - 90m/170m ±12 0,9 - TSOP6 SMD bobina, cinta - - par complementario - - - - -
NTJD4158CT1G NTJD4158CT1G ONSEMI enriquecido unipolar - N/P-MOSFET 30/-20 0,25/-0,88 - 1/215m ±20/±12 0,27 0,9/2,2 SC88 SMD bobina, cinta - - par complementario - - - - -
NVJD4158CT1G NVJD4158CT1G ONSEMI enriquecido unipolar - N/P-MOSFET 30/-20 0,25/-0,88 - 1/215m ±20/±12 0,27 0,9/2,2 SC88 SMD bobina, cinta - - par complementario - - - - -
FDS4501H FDS4501H ONSEMI enriquecido unipolar PowerTrench® N/P-MOSFET 30/-20 9,3/-5,6 - 80m/29m ±20/±8 2,5 21/27 SO8 SMD bobina, cinta - - - - - - - -
FDMC8200S FDMC8200S ONSEMI enriquecido unipolar - N-MOSFET x2 30/30 18/13 - 32m/13,5m ±20/±20 1,9/2,5 10/22 Power33 SMD bobina, cinta - - - - - - - -
FDMC8200 FDMC8200 ONSEMI enriquecido unipolar - N-MOSFET x2 30/30 18/18 - 32m/13,5m ±20/±20 1,9/2,2 10/22 Power33 SMD bobina, cinta - - - - - - - -
FDMC7208S FDMC7208S ONSEMI enriquecido unipolar - N-MOSFET x2 30/30 22/26 - 12,4m/7,5m ±20/±12 1,9 18/36 Power33 SMD bobina, cinta - - - - - - - -
FDMS7620S FDMS7620S ONSEMI enriquecido unipolar - N-MOSFET x2 30/30 13/22 - 30m/15,1m ±20/±20 2,2/2,5 11/23 Power56 SMD bobina, cinta - - - - - - - -
FDMS7608S FDMS7608S ONSEMI enriquecido unipolar - N-MOSFET x2 30/30 22/30 - 13,9m/8,6m ±20/±20 2,2/2,5 24/30 Power56 SMD bobina, cinta - - - - - - - -
FDMS3669S FDMS3669S ONSEMI enriquecido unipolar - N-MOSFET x2 30/30 24/60 - 14,5m/7,1m ±20/±12 2,2/2,5 24/34 Power56 SMD bobina, cinta - - - - - - - -
FDMS7602S FDMS7602S ONSEMI enriquecido unipolar - N-MOSFET x2 30/30 30/30 - 12m/7,2m ±20/±20 2,2/2,5 28/46 Power56 SMD bobina, cinta - - - - - - - -
FDMS3664S FDMS3664S ONSEMI enriquecido unipolar - N-MOSFET x2 30/30 30/60 - 11m/4,5m ±20/±12 2,2/2,5 29/52 Power56 SMD bobina, cinta - - - - - - - -
FDMS3604S FDMS3604S ONSEMI enriquecido unipolar PowerTrench® N-MOSFET x2 30/30 30/40 40...100 10,8m/4m ±20/±20 2,2/2,5 29/66 PQFN8 SMD bobina, cinta - asimétrico - - - - - -
FDMS3660S FDMS3660S ONSEMI enriquecido unipolar - N-MOSFET x2 30/30 30/60 - 11m/2,6m ±20/±12 2,2/2,5 29/87 PQFN8 SMD bobina, cinta - - - - - - - -
FDMS1D2N03DSD FDMS1D2N03DSD ONSEMI enriquecido unipolar - N-MOSFET x2 30/30 54/126 - 4,9m/1,6m ±20/±20 26/42 33/117 PQFN8 SMD bobina, cinta - - - - - - - -
FDMC007N30D FDMC007N30D ONSEMI enriquecido unipolar - N-MOSFET x2 30/30 18/29 - 16,3m/9m ±12/±12 1,9/2,5 17/34 WDFN8 SMD bobina, cinta - - - - - - - -
ECH8657-TL-H ECH8657-TL-H ONSEMI enriquecido unipolar - N-MOSFET x2 35 4,5 30 59m ±20 1,5 4,6 ECH8 SMD bobina, cinta - - - - ESD - - -
NVMFS5C468NT1G NVMFS5C468NT1G ONSEMI enriquecido unipolar - N-MOSFET 40 35 151 12m ±20 14 7,9 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS5C468NLT1G NTMFS5C468NLT1G ONSEMI enriquecido unipolar - N-MOSFET 40 37 190 10,3m ±20 14 7,3 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS5C468NLAFT1G NVMFS5C468NLAFT1G ONSEMI enriquecido unipolar - N-MOSFET 40 37 190 10,3m ±20 14 7,3 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS5C466NT1G NVMFS5C466NT1G ONSEMI enriquecido unipolar - N-MOSFET 40 49 226 8,1m ±20 19 10 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS5C466NLT1G NVMFS5C466NLT1G ONSEMI enriquecido unipolar - N-MOSFET 40 52 238,6 7,3m ±20 19 16 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS5C460NT1G NVMFS5C460NT1G ONSEMI enriquecido unipolar - N-MOSFET 40 71 352 5,3m ±20 25 16 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS5C460NWFT1G NVMFS5C460NWFT1G ONSEMI enriquecido unipolar - N-MOSFET 40 71 352 5,3m ±20 25 16 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS5C460NLT1G NTMFS5C460NLT1G ONSEMI enriquecido unipolar - N-MOSFET 40 78 520 4,5m ±20 25 23 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS5C460NLAFT1G NVMFS5C460NLAFT1G ONSEMI enriquecido unipolar - N-MOSFET 40 78 396 4,5m ±20 25 23 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS5C456NT1G NVMFS5C456NT1G ONSEMI enriquecido unipolar - N-MOSFET 40 80 400 4,5m ±20 27 18 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS3D1N04XMT1G NTMFS3D1N04XMT1G ONSEMI enriquecido unipolar - N-MOSFET 40 83 506 3,1m ±20 39 15,6 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS5C456NLT1G NTMFS5C456NLT1G ONSEMI enriquecido unipolar - N-MOSFET 40 87 520 3,7m ±20 27 28,8 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS5C456NLAFT1G NVMFS5C456NLAFT1G ONSEMI enriquecido unipolar - N-MOSFET 40 87 520 3,7m ±20 27 18 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS5C450NAFT1G NVMFS5C450NAFT1G ONSEMI enriquecido unipolar - N-MOSFET 40 102 554 3,3m ±20 34 23 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS5H431NLT1G NTMFS5H431NLT1G ONSEMI enriquecido unipolar - N-MOSFET 40 106 600 3,3m ±20 26 28 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS5C450NLAFT1G NVMFS5C450NLAFT1G ONSEMI enriquecido unipolar - N-MOSFET 40 110 740 2,8m ±20 34 35 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS2D3N04XMT1G NTMFS2D3N04XMT1G ONSEMI enriquecido unipolar - N-MOSFET 40 111 682 2,35m ±20 53 22,1 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS5C442NLT1G NTMFS5C442NLT1G ONSEMI enriquecido unipolar - N-MOSFET 40 130 900 2,5m ±20 28 50 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS5C442NLAFT1G NVMFS5C442NLAFT1G ONSEMI enriquecido unipolar - N-MOSFET 40 130 900 2,5m ±20 42 50 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS5C442NT1G NTMFS5C442NT1G ONSEMI enriquecido unipolar - N-MOSFET 40 140 900 2,3m ±20 42 32 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS5C442NAFT1G NVMFS5C442NAFT1G ONSEMI enriquecido unipolar - N-MOSFET 40 140 900 2,3m ±20 42 32 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS5C442NAFT1GYE NVMFS5C442NAFT1G-YE ONSEMI enriquecido unipolar - N-MOSFET 40 140 900 2,3m ±20 42 32 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS5C423NLT1G NTMFS5C423NLT1G ONSEMI enriquecido unipolar - N-MOSFET 40 150 900 2m ±20 42 50 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS5C423NLAFT1G NVMFS5C423NLAFT1G ONSEMI enriquecido unipolar - N-MOSFET 40 150 900 2m ±20 42 50 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS5H419NLT1G NTMFS5H419NLT1G ONSEMI enriquecido unipolar - N-MOSFET 40 155 900 2,1m ±20 36 45 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS5C430NT1G NTMFS5C430NT1G ONSEMI enriquecido unipolar - N-MOSFET 40 185 900 1,7m ±20 53 47 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS5C430NAFT1G NVMFS5C430NAFT1G ONSEMI enriquecido unipolar - N-MOSFET 40 185 900 1,7m ±20 53 47 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS5C430NLT1G NTMFS5C430NLT1G ONSEMI enriquecido unipolar - N-MOSFET 40 200 900 1,4m ±20 53 70 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS5C426NT1G NTMFS5C426NT1G ONSEMI enriquecido unipolar - N-MOSFET 40 235 900 1,3m ±20 64 65 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS5C426NAFT1G NVMFS5C426NAFT1G ONSEMI enriquecido unipolar - N-MOSFET 40 235 900 1,3m ±20 64 65 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS5C426NLT1G NTMFS5C426NLT1G ONSEMI enriquecido unipolar - N-MOSFET 40 237 1480 1,2m ±20 64 93 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS5C426NLT1G NVMFS5C426NLT1G ONSEMI enriquecido unipolar - N-MOSFET 40 237 1480 1,8m ±20 64 93 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS5C420NT1G NVMFS5C420NT1G ONSEMI enriquecido unipolar - N-MOSFET 40 268 900 1,1m ±20 75 82 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS5C420NWFT1G NVMFS5C420NWFT1G ONSEMI enriquecido unipolar - N-MOSFET 40 268 900 1,1m ±20 75 82 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS5H409NLT1G NTMFS5H409NLT1G ONSEMI enriquecido unipolar - N-MOSFET 40 270 900 1,1m ±20 56 89 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS5C420NLT1G NVMFS5C420NLT1G ONSEMI enriquecido unipolar - N-MOSFET 40 277 900 1m ±20 73 100 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS5C410NT1G NTMFS5C410NT1G ONSEMI enriquecido unipolar - N-MOSFET 40 300 900 920µ ±20 83 86 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS5C410NAFT1G NVMFS5C410NAFT1G ONSEMI enriquecido unipolar - N-MOSFET 40 300 900 920µ ±20 83 86 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS5C410NWFAFT1G NVMFS5C410NWFAFT1G ONSEMI enriquecido unipolar - N-MOSFET 40 300 900 920µ ±20 83 86 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS5C410NWFET1G NVMFS5C410NWFET1G ONSEMI enriquecido unipolar - N-MOSFET 40 300 900 920µ ±20 83 86 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS5C410NLT1G NTMFS5C410NLT1G ONSEMI enriquecido unipolar - N-MOSFET 40 330 900 820µ ±20 56 143 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS5H400NLT1G NTMFS5H400NLT1G ONSEMI enriquecido unipolar - N-MOSFET 40 330 900 800µ ±20 66 120 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS5C410NLAFT1G NVMFS5C410NLAFT1G ONSEMI enriquecido unipolar - N-MOSFET 40 330 900 820µ ±20 83 143 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS5C406NT1G NVMFS5C406NT1G ONSEMI enriquecido unipolar - N-MOSFET 40 353 900 800µ ±20 90 110 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS5C406NLT1G NTMFS5C406NLT1G ONSEMI enriquecido unipolar - N-MOSFET 40 362 900 700µ ±20 90 149 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS5C406NLT1G NVMFS5C406NLT1G ONSEMI enriquecido unipolar - N-MOSFET 40 362 900 700µ ±20 90 149 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS5C404NLT1G NTMFS5C404NLT1G ONSEMI enriquecido unipolar - N-MOSFET 40 370 900 670µ ±20 67 181 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS5C404NLAFT1G NVMFS5C404NLAFT1G ONSEMI enriquecido unipolar - N-MOSFET 40 370 900 670µ ±20 100 181 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS5C404NLWFT1G NVMFS5C404NLWFT1G ONSEMI enriquecido unipolar - N-MOSFET 40 370 900 670µ ±20 100 181 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS5C404NAFT1G NVMFS5C404NAFT1G ONSEMI enriquecido unipolar - N-MOSFET 40 378 900 700µ ±20 100 128 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS5C404NT1G NVMFS5C404NT1G ONSEMI enriquecido unipolar - N-MOSFET 40 378 900 700µ ±20 100 128 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS5C430NLAFT1G NVMFS5C430NLAFT1G ONSEMI enriquecido unipolar - N-MOSFET 40 140 900 1,4m ±20 53 32 DFN5x6 SMD bobina, cinta - - - - - - - -
NVMFD5C462NLT1G NVMFD5C462NLT1G ONSEMI enriquecido unipolar - N-MOSFET 40 52 - 4,7m ±20 25 - DFN8 SMD bobina, cinta - - - - - - - -
FDMS8320LDC FDMS8320LDC ONSEMI enriquecido unipolar - N-MOSFET 40 192 300 1,7m ±20 125 170 DFN8 SMD bobina, cinta - - - - - - - -
NVMFSC0D9N04C NVMFSC0D9N04C ONSEMI enriquecido unipolar - N-MOSFET 40 310 900 870µ ±20 166 86 DFN8 SMD bobina, cinta - - - - - - - -
NTMFSC0D9N04CL NTMFSC0D9N04CL ONSEMI enriquecido unipolar - N-MOSFET 40 313 900 850µ ±20 167 143 DFN8 SMD bobina, cinta - - - - - - - -
NVMFSC0D9N04CL NVMFSC0D9N04CL ONSEMI enriquecido unipolar - N-MOSFET 40 316 900 850µ ±20 83 135 DFN8 SMD bobina, cinta - - - - - - - -
NVMFD5C478NT1G NVMFD5C478NT1G ONSEMI enriquecido unipolar - N-MOSFET x2 40 27 90 17m ±20 12 6,3 DFN8 SMD bobina, cinta - - - - - - - -
NVMFD5C478NWFT1G NVMFD5C478NWFT1G ONSEMI enriquecido unipolar - N-MOSFET x2 40 27 90 17m ±20 12 6,3 DFN8 SMD bobina, cinta - - - - - - - -
NVMFD5C478NLT1G NVMFD5C478NLT1G ONSEMI enriquecido unipolar - N-MOSFET x2 40 29 98 14,5m ±20 12 8,1 DFN8 SMD bobina, cinta - - - - - - - -
NVMFD5C478NLWFT1G NVMFD5C478NLWFT1G ONSEMI enriquecido unipolar - N-MOSFET x2 40 29 98 14,5m ±20 12 8,1 DFN8 SMD bobina, cinta - - - - - - - -
NVMFD5C470NLT1G NVMFD5C470NLT1G ONSEMI enriquecido unipolar - N-MOSFET x2 40 36 110 11,5m ±20 14 9 DFN8 SMD bobina, cinta - - - - - - - -
NVMFD5C470NT1G NVMFD5C470NT1G ONSEMI enriquecido unipolar - N-MOSFET x2 40 36 108 11,7m ±20 14 8 DFN8 SMD bobina, cinta - - - - - - - -
NVMFD5C470NWFT1G NVMFD5C470NWFT1G ONSEMI enriquecido unipolar - N-MOSFET x2 40 36 108 11,7m ±20 14 8 DFN8 SMD bobina, cinta - - - - - - - -
NTMFD5C466NT1G NTMFD5C466NT1G ONSEMI enriquecido unipolar - N-MOSFET x2 40 49 169 8,1m ±20 19 11 DFN8 SMD bobina, cinta - - - - - - - -
NVMFD5C466NT1G NVMFD5C466NT1G ONSEMI enriquecido unipolar - N-MOSFET x2 40 49 169 8,1m ±20 19 11 DFN8 SMD bobina, cinta - - - - - - - -
NVMFD5C466NWFT1G NVMFD5C466NWFT1G ONSEMI enriquecido unipolar - N-MOSFET x2 40 49 169 8,1m ±20 19 11 DFN8 SMD bobina, cinta - - - - - - - -
NTMFD5C466NLT1G NTMFD5C466NLT1G ONSEMI enriquecido unipolar - N-MOSFET x2 40 52 177 7,4m ±20 20 16 DFN8 SMD bobina, cinta - - - - - - - -
NVMFD5C466NLT1G NVMFD5C466NLT1G ONSEMI enriquecido unipolar - N-MOSFET x2 40 52 198 7,4m ±20 19 16 DFN8 SMD bobina, cinta - - - - - - - -
NVMFD5C466NLWFT1G NVMFD5C466NLWFT1G ONSEMI enriquecido unipolar - N-MOSFET x2 40 52 198 7,4m ±20 19 16 DFN8 SMD bobina, cinta - - - - - - - -
NVMFD5C462NT1G NVMFD5C462NT1G ONSEMI enriquecido unipolar - N-MOSFET x2 40 70 298 5,4m ±20 25 16 DFN8 SMD bobina, cinta - - - - - - - -
NVMFD5C462NWFT1G NVMFD5C462NWFT1G ONSEMI enriquecido unipolar - N-MOSFET x2 40 70 298 5,4m ±20 25 16 DFN8 SMD bobina, cinta - - - - - - - -
NVMFD5C462NLWFT1G NVMFD5C462NLWFT1G ONSEMI enriquecido unipolar - N-MOSFET x2 40 84 311 4,7m ±20 25 23 DFN8 SMD bobina, cinta - - - - - - - -
NVMFD5C446NT1G NVMFD5C446NT1G ONSEMI enriquecido unipolar - N-MOSFET x2 40 127 637 2,9m ±20 44 38 DFN8 SMD bobina, cinta - - - - - - - -
NVMFD5C446NWFT1G NVMFD5C446NWFT1G ONSEMI enriquecido unipolar - N-MOSFET x2 40 127 637 2,9m ±20 44 38 DFN8 SMD bobina, cinta - - - - - - - -
NTMFD5C446NLT1G NTMFD5C446NLT1G ONSEMI enriquecido unipolar - N-MOSFET x2 40 145 644 2,65m ±20 62 54 DFN8 SMD bobina, cinta - - - - - - - -
NVMFD5C446NLT1G NVMFD5C446NLT1G ONSEMI enriquecido unipolar - N-MOSFET x2 40 145 644 2,65m ±20 62 54 DFN8 SMD bobina, cinta - - - - - - - -
NVMFD5C446NLWFT1G NVMFD5C446NLWFT1G ONSEMI enriquecido unipolar - N-MOSFET x2 40 145 644 2,65m ±20 62 54 DFN8 SMD bobina, cinta - - - - - - - -
NVMFS5C466NWFT1G NVMFS5C466NWFT1G ONSEMI enriquecido unipolar - N-MOSFET 40 49 226 8,1m ±20 19 10 DFNW5 SMD bobina, cinta - - - - - - - -
NVMFS5C466NLWFT1G NVMFS5C466NLWFT1G ONSEMI enriquecido unipolar - N-MOSFET 40 52 238,6 7,3m ±20 19 16 DFNW5 SMD bobina, cinta - - - - - - - -
NVMFS5C460NLWFT1G NVMFS5C460NLWFT1G ONSEMI enriquecido unipolar - N-MOSFET 40 78 396 4,5m ±20 25 23 DFNW5 SMD bobina, cinta - - - - - - - -
NVMFS5C456NWFT1G NVMFS5C456NWFT1G ONSEMI enriquecido unipolar - N-MOSFET 40 80 400 4,5m ±20 27 18 DFNW5 SMD bobina, cinta - - - - - - - -
NVMFS5C450NWFAFT1G NVMFS5C450NWFAFT1G ONSEMI enriquecido unipolar - N-MOSFET 40 102 554 3,3m ±20 34 23 DFNW5 SMD bobina, cinta - - - - - - - -
NVMFWS2D3N04XMT1G NVMFWS2D3N04XMT1G ONSEMI enriquecido unipolar - N-MOSFET 40 121 688 2,35m ±20 63 22,2 DFNW5 SMD bobina, cinta - - - - - - - -
NVMFS5C442NWFAFT1G NVMFS5C442NWFAFT1G ONSEMI enriquecido unipolar - N-MOSFET 40 140 900 2,3m ±20 42 32 DFNW5 SMD bobina, cinta - - - - - - - -
NVMFS5C442NWFET1G NVMFS5C442NWFET1G ONSEMI enriquecido unipolar - N-MOSFET 40 140 900 2,3m ±20 42 32 DFNW5 SMD bobina, cinta - - - - - - - -
NVMFS5C430NWFAFT1G NVMFS5C430NWFAFT1G ONSEMI enriquecido unipolar - N-MOSFET 40 185 900 1,7m ±20 53 47 DFNW5 SMD bobina, cinta - - - - - - - -
NVMFS5C426NWFAFT1G NVMFS5C426NWFAFT1G ONSEMI enriquecido unipolar - N-MOSFET 40 235 900 1,3m ±20 64 65 DFNW5 SMD bobina, cinta - - - - - - - -
NVMFS5C426NLWFT1G NVMFS5C426NLWFT1G ONSEMI enriquecido unipolar - N-MOSFET 40 237 1480 1,8m ±20 64 93 DFNW5 SMD bobina, cinta - - - - - - - -
NVMFS5C420NLWFT1G NVMFS5C420NLWFT1G ONSEMI enriquecido unipolar - N-MOSFET 40 277 900 1m ±20 73 100 DFNW5 SMD bobina, cinta - - - - - - - -
NVMFWS0D7N04XMT1G NVMFWS0D7N04XMT1G ONSEMI enriquecido unipolar - N-MOSFET 40 323 900 700µ ±20 134 71,6 DFNW5 SMD bobina, cinta - - - - - - - -
NVMFS5C406NWFT1G NVMFS5C406NWFT1G ONSEMI enriquecido unipolar - N-MOSFET 40 353 900 800µ ±20 90 110 DFNW5 SMD bobina, cinta - - - - - - - -
NVMFS5C406NLWFT1G NVMFS5C406NLWFT1G ONSEMI enriquecido unipolar - N-MOSFET 40 362 900 700µ ±20 90 149 DFNW5 SMD bobina, cinta - - - - - - - -
NVMFS5C404NWFAFT1G NVMFS5C404NWFAFT1G ONSEMI enriquecido unipolar - N-MOSFET 40 378 900 700µ ±20 100 128 DFNW5 SMD bobina, cinta - - - - - - - -
NVMFWS0D5N04XMT1G NVMFWS0D5N04XMT1G ONSEMI enriquecido unipolar - N-MOSFET 40 414 900 520µ ±20 163 97,9 DFNW5 SMD bobina, cinta - - - - - - - -
NVMFWS0D4N04XMT1G NVMFWS0D4N04XMT1G ONSEMI enriquecido unipolar - N-MOSFET 40 509 900 420µ ±20 197 132 DFNW5 SMD bobina, cinta - - - - - - - -
FDMT80040DC FDMT80040DC ONSEMI enriquecido unipolar - N-MOSFET 40 265 2644 0,9m ±20 156 338 DFNW8 SMD bobina, cinta - - - - - - - -
NVMTS0D7N04CTXG NVMTS0D7N04CTXG ONSEMI enriquecido unipolar - N-MOSFET 40 420 900 670µ ±20 103 140 DFNW8 SMD bobina, cinta - - - - - - - -
NVMTS0D7N04CLTXG NVMTS0D7N04CLTXG ONSEMI enriquecido unipolar - N-MOSFET 40 433 900 630µ ±20 103 99 DFNW8 SMD bobina, cinta - - - - - - - -
NVMTS0D6N04CTXG NVMTS0D6N04CTXG ONSEMI enriquecido unipolar - N-MOSFET 40 533 900 480µ ±20 122,7 187 DFNW8 SMD bobina, cinta - - - - - - - -
NVMTS0D4N04CLTXG NVMTS0D4N04CLTXG ONSEMI enriquecido unipolar - N-MOSFET 40 553,8 900 400µ ±20 122 163 DFNW8 SMD bobina, cinta - - - - - - - -
NVMTS0D6N04CLTXG NVMTS0D6N04CLTXG ONSEMI enriquecido unipolar - N-MOSFET 40 554,5 900 420µ ±20 122,7 126 DFNW8 SMD bobina, cinta - - - - - - - -
NVD5C486NT4G NVD5C486NT4G ONSEMI enriquecido unipolar - N-MOSFET 40 23 104 17,9m ±20 9,1 14 DPAK SMD bobina, cinta - - - - - - - -
NVD5C486NLT4G NVD5C486NLT4G ONSEMI enriquecido unipolar - N-MOSFET 40 24 110 16m ±20 9 9,8 DPAK SMD bobina, cinta - - - - - - - -
FDD8451 FDD8451 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 40 28 - 41m ±20 30 - DPAK SMD bobina, cinta - - - - - - - -
FDD8647L FDD8647L ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 40 42 - 13,6m ±20 43 14 DPAK SMD bobina, cinta - - - - - - - -
NVD5C478NLT4G NVD5C478NLT4G ONSEMI enriquecido unipolar - N-MOSFET 40 45 220 7,7m ±20 15 20 DPAK SMD bobina, cinta - - - - - - - -
FDD8444 FDD8444 ONSEMI enriquecido unipolar - N-MOSFET 40 50 - 5,2m ±20 153 89 DPAK SMD bobina, cinta - - - - - - - -
FDD8447L FDD8447L ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 40 50 - 14m ±20 44 52 DPAK SMD bobina, cinta - - - - - - - -
NVD5C464NT4G NVD5C464NT4G ONSEMI enriquecido unipolar - N-MOSFET 40 59 431 5,8m ±20 20 20 DPAK SMD bobina, cinta - - - - - - - -
FDD8445 FDD8445 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 40 70 - 16,3m ±20 79 7,6 DPAK SMD bobina, cinta - - - - - - - -
NVD5C460NT4G NVD5C460NT4G ONSEMI enriquecido unipolar - N-MOSFET 40 70 379 4,9m ±20 23 26 DPAK SMD bobina, cinta - - - - - - - -
STD5406NT4G-VF01 STD5406NT4G-VF01 ONSEMI enriquecido unipolar - N-MOSFET 40 70 150 10m ±20 100 45 DPAK SMD bobina, cinta - - - - - - - -
NVD5C460NLT4G NVD5C460NLT4G ONSEMI enriquecido unipolar - N-MOSFET 40 73 395 4,6m ±20 23 36 DPAK SMD bobina, cinta - - - - - - - -
NVD5C454NT4G NVD5C454NT4G ONSEMI enriquecido unipolar - N-MOSFET 40 82 446 4,2m ±20 28 32 DPAK SMD bobina, cinta - - - - - - - -
NVD5C454NLT4G NVD5C454NLT4G ONSEMI enriquecido unipolar - N-MOSFET 40 84 463 3,9m ±20 28 43 DPAK SMD bobina, cinta - - - - - - - -
FDD9409-F085 FDD9409-F085 ONSEMI enriquecido unipolar - N-MOSFET 40 90 - 3,2m ±20 150 42 DPAK SMD bobina, cinta - - - - - - - -
NVD5C446NT4G NVD5C446NT4G ONSEMI enriquecido unipolar - N-MOSFET 40 105 590 3,5m ±20 33 34,3 DPAK SMD bobina, cinta - - - - - - - -
NVD5C434NT4G NVD5C434NT4G ONSEMI enriquecido unipolar - N-MOSFET 40 163 900 2,1m ±20 58 80,6 DPAK SMD bobina, cinta - - - - - - - -
FDBL0090N40 FDBL0090N40 ONSEMI enriquecido unipolar - N-MOSFET 40 240 - 900µ ±20 357 144 H-PSOF8L SMD - - - - - - - - -
FDBL9401-F085T6 FDBL9401-F085T6 ONSEMI enriquecido unipolar - N-MOSFET 40 240 - 670µ ±20 90,3 148 H-PSOF8L SMD bobina, cinta - - - - - - - -
FDBL9406-F085T6 FDBL9406-F085T6 ONSEMI enriquecido unipolar - N-MOSFET 40 240 - 1,21m ±20 68,2 75 H-PSOF8L SMD bobina, cinta - - - - - - - -
FDBL0065N40 FDBL0065N40 ONSEMI enriquecido unipolar - N-MOSFET 40 300 - 650µ ±20 429 220 H-PSOF8L SMD - - - - - - - - -
FDBL9403-F085T6 FDBL9403-F085T6 ONSEMI enriquecido unipolar - N-MOSFET 40 300 - 950µ ±20 79,8 108 H-PSOF8L SMD bobina, cinta - - - - - - - -
NVBLS0D5N04CTXG NVBLS0D5N04CTXG ONSEMI enriquecido unipolar - N-MOSFET 40 300 4700 570µ - 97,4 185 H-PSOF8L SMD bobina, cinta - - - - - - - -
NVTYS010N04CLTWG NVTYS010N04CLTWG ONSEMI enriquecido unipolar - N-MOSFET 40 43 162 9,5m ±20 16 12 LFPAK33 SMD bobina, cinta - - - - - - - -
NVTYS007N04CLTWG NVTYS007N04CLTWG ONSEMI enriquecido unipolar - N-MOSFET 40 54 215 7,3m ±20 19 16 LFPAK33 SMD bobina, cinta - - - - - - - -
NVTYS005N04CLTWG NVTYS005N04CLTWG ONSEMI enriquecido unipolar - N-MOSFET 40 75 326 4,8m ±20 25 23,1 LFPAK33 SMD bobina, cinta - - - - - - - -
NVTYS004N04CLTWG NVTYS004N04CLTWG ONSEMI enriquecido unipolar - N-MOSFET 40 84 371 4,3m ±20 27 25 LFPAK33 SMD bobina, cinta - - - - - - - -
NVTYS003N04CTWG NVTYS003N04CTWG ONSEMI enriquecido unipolar - N-MOSFET 40 99 465 3,9m ±20 34 24 LFPAK33 SMD bobina, cinta - - - - - - - -
NVTYS003N04CLTWG NVTYS003N04CLTWG ONSEMI enriquecido unipolar - N-MOSFET 40 106 498 3,4m ±20 34 36 LFPAK33 SMD bobina, cinta - - - - - - - -
NVMYS011N04CTWG NVMYS011N04CTWG ONSEMI enriquecido unipolar - N-MOSFET 40 35 173 12m ±20 9,1 7,9 LFPAK56 SMD bobina, cinta - - - - - - - -
NTMYS8D0N04CTWG NTMYS8D0N04CTWG ONSEMI enriquecido unipolar - N-MOSFET 40 49 255 8,1m ±20 19 10 LFPAK56 SMD bobina, cinta - - - - - - - -
NVMYS8D0N04CTWG NVMYS8D0N04CTWG ONSEMI enriquecido unipolar - N-MOSFET 40 49 255 8,1m ±20 19 10 LFPAK56 SMD bobina, cinta - - - - - - - -
NTMYS7D3N04CLTWG NTMYS7D3N04CLTWG ONSEMI enriquecido unipolar - N-MOSFET 40 52 269 7,3m ±20 12 7 LFPAK56 SMD bobina, cinta - - - - - - - -
NVMYS7D3N04CLTWG NVMYS7D3N04CLTWG ONSEMI enriquecido unipolar - N-MOSFET 40 52 269 7,3m ±20 12 16 LFPAK56 SMD bobina, cinta - - - - - - - -
NVMYS5D3N04CTWG NVMYS5D3N04CTWG ONSEMI enriquecido unipolar - N-MOSFET 40 71 352 5,3m ±20 25 16 LFPAK56 SMD bobina, cinta - - - - - - - -
NVMYS4D6N04CLTWG NVMYS4D6N04CLTWG ONSEMI enriquecido unipolar - N-MOSFET 40 78 520 4,5m ±20 25 23 LFPAK56 SMD bobina, cinta - - - - - - - -
NTMYS4D5N04CTWG NTMYS4D5N04CTWG ONSEMI enriquecido unipolar - N-MOSFET 40 80 400 4,5m ±20 27 18 LFPAK56 SMD bobina, cinta - - - - - - - -
NTMYS3D5N04CTWG NTMYS3D5N04CTWG ONSEMI enriquecido unipolar - N-MOSFET 40 102 554 3,3m ±20 34 23 LFPAK56 SMD bobina, cinta - - - - - - - -
NVMYS3D5N04CTWG NVMYS3D5N04CTWG ONSEMI enriquecido unipolar - N-MOSFET 40 102 554 3,3m ±20 34 23 LFPAK56 SMD bobina, cinta - - - - - - - -
NTMYS2D9N04CLTWG NTMYS2D9N04CLTWG ONSEMI enriquecido unipolar - N-MOSFET 40 110 740 2,8m ±20 34 35 LFPAK56 SMD bobina, cinta - - - - - - - -
NVMYS2D9N04CLTWG NVMYS2D9N04CLTWG ONSEMI enriquecido unipolar - N-MOSFET 40 110 740 2,8m ±20 34 35 LFPAK56 SMD bobina, cinta - - - - - - - -
NVMYS2D1N04CLTWG NVMYS2D1N04CLTWG ONSEMI enriquecido unipolar - N-MOSFET 40 132 780 2,5m ±20 42 50 LFPAK56 SMD bobina, cinta - - - - - - - -
NVMYS1D7N04CT1G NVMYS1D7N04CT1G ONSEMI enriquecido unipolar - N-MOSFET 40 135 1237 1,7m ±20 53,6 50 LFPAK56 SMD bobina, cinta - - - - - - - -
NTMYS2D4N04CTWG NTMYS2D4N04CTWG ONSEMI enriquecido unipolar - N-MOSFET 40 138 829 2,3m ±20 27 32 LFPAK56 SMD bobina, cinta - - - - - - - -
NVMYS2D4N04CTWG NVMYS2D4N04CTWG ONSEMI enriquecido unipolar - N-MOSFET 40 138 829 2,3m ±20 27 32 LFPAK56 SMD bobina, cinta - - - - - - - -
NVMYS1D3N04CTWG NVMYS1D3N04CTWG ONSEMI enriquecido unipolar - N-MOSFET 40 252 900 1,15m ±20 67 75 LFPAK56 SMD bobina, cinta - - - - - - - -
NTMYS1D2N04CLTWG NTMYS1D2N04CLTWG ONSEMI enriquecido unipolar - N-MOSFET 40 258 900 1,7m ±20 67 109 LFPAK56 SMD bobina, cinta - - - - - - - -
NVMYS1D2N04CLTWG NVMYS1D2N04CLTWG ONSEMI enriquecido unipolar - N-MOSFET 40 258 900 1,2m ±20 67 109 LFPAK56 SMD bobina, cinta - - - - - - - -
NVMJS1D7N04CTWG NVMJS1D7N04CTWG ONSEMI enriquecido unipolar - N-MOSFET 40 185 900 1,7m ±20 53 47 LFPAK8 SMD bobina, cinta - - - - - - - -
NVMJS1D5N04CLTWG NVMJS1D5N04CLTWG ONSEMI enriquecido unipolar - N-MOSFET 40 200 900 1,4m ±20 53 70 LFPAK8 SMD bobina, cinta - - - - - - - -
NVMJS1D3N04CTWG NVMJS1D3N04CTWG ONSEMI enriquecido unipolar - N-MOSFET 40 235 900 1,3m ±20 64 65 LFPAK8 SMD bobina, cinta - - - - - - - -
NTMJS1D2N04CLTWG NTMJS1D2N04CLTWG ONSEMI enriquecido unipolar - N-MOSFET 40 237 1480 1,2m ±20 64 93 LFPAK8 SMD bobina, cinta - - - - - - - -
NVMJS1D2N04CLTWG NVMJS1D2N04CLTWG ONSEMI enriquecido unipolar - N-MOSFET 40 237 1480 1,2m ±20 64 93 LFPAK8 SMD bobina, cinta - - - - - - - -
NTMJS1D0N04CTWG NTMJS1D0N04CTWG ONSEMI enriquecido unipolar - N-MOSFET 40 300 900 920µ ±20 83 86 LFPAK8 SMD bobina, cinta - - - - - - - -
NVMJS1D0N04CTWG NVMJS1D0N04CTWG ONSEMI enriquecido unipolar - N-MOSFET 40 300 900 920µ ±20 83 86 LFPAK8 SMD bobina, cinta - - - - - - - -
NTMJS0D9N04CLTWG NTMJS0D9N04CLTWG ONSEMI enriquecido unipolar - N-MOSFET 40 330 900 820µ ±20 83 143 LFPAK8 SMD bobina, cinta - - - - - - - -
NVMJS0D9N04CLTWG NVMJS0D9N04CLTWG ONSEMI enriquecido unipolar - N-MOSFET 40 330 900 820µ ±20 83 143 LFPAK8 SMD bobina, cinta - - - - - - - -
NTMJS0D8N04CLTWG NTMJS0D8N04CLTWG ONSEMI enriquecido unipolar - N-MOSFET 40 368 900 720µ ±20 90 162 LFPAK8 SMD bobina, cinta - - - - - - - -
NVMJS0D8N04CLTWG NVMJS0D8N04CLTWG ONSEMI enriquecido unipolar - N-MOSFET 40 368 900 720µ ±20 90 162 LFPAK8 SMD bobina, cinta - - - - - - - -
FDMA8051L FDMA8051L ONSEMI enriquecido unipolar - N-MOSFET 40 10 80 19m ±20 2,4 20 MicroFET SMD bobina, cinta - - - - - - - -
FDMC8321L FDMC8321L ONSEMI enriquecido unipolar - N-MOSFET 40 49 100 4,1m ±20 40 61 Power33 SMD bobina, cinta - - - - - - - -
FDMC8360L FDMC8360L ONSEMI enriquecido unipolar - N-MOSFET 40 80 240 2,9m ±20 54 80 Power33 SMD bobina, cinta - - - - - - - -
FDMC8360LET40 FDMC8360LET40 ONSEMI enriquecido unipolar - N-MOSFET 40 100 658 3,5m ±20 75 80 Power33 SMD bobina, cinta - - - - - - - -
FDMC9430L-F085 FDMC9430L-F085 ONSEMI enriquecido unipolar - N-MOSFET x2 40 12 - 13m ±12 11,4 22 Power33 SMD bobina, cinta - - - - - - - -
FDMS8333L FDMS8333L ONSEMI enriquecido unipolar - N-MOSFET 40 76 250 4,7m ±20 69 64 Power56 SMD bobina, cinta - - - - - - - -
FDMS8320L FDMS8320L ONSEMI enriquecido unipolar - N-MOSFET 40 248 943 1,1m ±20 104 121 Power56 SMD bobina, cinta - - - - - - - -
NTMTS0D7N04CTXG NTMTS0D7N04CTXG ONSEMI enriquecido unipolar - N-MOSFET 40 420 900 670µ ±20 103 140 Power88 SMD bobina, cinta - - - - - - - -
NTMTS0D4N04CLTXG NTMTS0D4N04CLTXG ONSEMI enriquecido unipolar - N-MOSFET 40 553,8 900 400µ ±20 122 163 Power88 SMD bobina, cinta - - - - - - - -
NTMTS0D6N04CLTXG NTMTS0D6N04CLTXG ONSEMI enriquecido unipolar - N-MOSFET 40 554,5 900 420µ ±20 122,7 126 Power88 SMD bobina, cinta - - - - - - - -
NTMTS0D4N04CTXG NTMTS0D4N04CTXG ONSEMI enriquecido unipolar - N-MOSFET 40 558 900 450µ ±20 122 251 Power88 SMD bobina, cinta - - - - - - - -
FDMC8462 FDMC8462 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 40 20 - 9,3m ±20 41 43 PQFN8 SMD bobina, cinta - - - - - - - -
FDMS8460 FDMS8460 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 40 49 - 3,3m ±20 104 110 PQFN8 SMD bobina, cinta - - - - - - - -
FDMC8321LDC FDMC8321LDC ONSEMI enriquecido unipolar - N-MOSFET 40 108 320 4,1m ±20 56 60 PQFN8 SMD bobina, cinta - - - - - - - -
NTTFS2D1N04HLTWG NTTFS2D1N04HLTWG ONSEMI enriquecido unipolar - N-MOSFET 40 150 958 2,1m ±20 83 43,6 PQFN8 SMD bobina, cinta - - - - - - - -
FDS4672A FDS4672A ONSEMI enriquecido unipolar - N-MOSFET 40 11 - 21m ±12 2,5 - SO8 SMD bobina, cinta - - - - - - - -
FDS4470 FDS4470 ONSEMI enriquecido unipolar - N-MOSFET 40 12,5 - 14m ±20 2,5 - SO8 SMD bobina, cinta - - - - - - - -
FDS8638 FDS8638 ONSEMI enriquecido unipolar - N-MOSFET 40 18 - 6,3 ±20 2,5 - SO8 SMD bobina, cinta - - - - - - - -
FDS8840NZ FDS8840NZ ONSEMI enriquecido unipolar - N-MOSFET 40 18,6 63 4,5m ±20 2,5 103 SO8 SMD bobina, cinta - - - - - - - -
FDS8949 FDS8949 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET x2 40 6 - 43m ±20 2 11 SO8 SMD bobina, cinta - - - - - - - -
NVMJST3D3N04CTXG NVMJST3D3N04CTXG ONSEMI enriquecido unipolar - N-MOSFET 40 157 900 3,3m ±20 75 23 TCPAK10 SMD bobina, cinta - - - - - - - -
NVMJST1D6N04CTXG NVMJST1D6N04CTXG ONSEMI enriquecido unipolar - N-MOSFET 40 314 900 1,65m ±20 150 47 TCPAK10 SMD bobina, cinta - - - - - - - -
NVMJST1D3N04CTXG NVMJST1D3N04CTXG ONSEMI enriquecido unipolar - N-MOSFET 40 386 900 1,39m ±20 187 65 TCPAK10 SMD bobina, cinta - - - - - - - -
NVMJST0D9N04CTXG NVMJST0D9N04CTXG ONSEMI enriquecido unipolar - N-MOSFET 40 531 900 1,07m ±20 278 86 TCPAK10 SMD bobina, cinta - - - - - - - -
FDMC8327L FDMC8327L ONSEMI enriquecido unipolar - N-MOSFET 40 14 60 14,5m ±20 30 26 WDFN8 SMD bobina, cinta - - - - - - - -
FDMC8015L FDMC8015L ONSEMI enriquecido unipolar - N-MOSFET 40 18 30 39m ±20 24 19 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS5C478NLTAG NVTFS5C478NLTAG ONSEMI enriquecido unipolar - N-MOSFET 40 26 104 14m ±20 10 8 WDFN8 SMD bobina, cinta - - - - - - - -
NTTFS015N04CTAG NTTFS015N04CTAG ONSEMI enriquecido unipolar - N-MOSFET 40 27 93 17,3m ±20 7,4 6,3 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS015N04CTAG NVTFS015N04CTAG ONSEMI enriquecido unipolar - N-MOSFET 40 27 93 17,3m ±20 7,4 6,3 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS5C471NLTAG NVTFS5C471NLTAG ONSEMI enriquecido unipolar - N-MOSFET 40 41 163 9m ±20 15 12 WDFN8 SMD bobina, cinta - - - - - - - -
NTTFS008N04CTAG NTTFS008N04CTAG ONSEMI enriquecido unipolar - N-MOSFET 40 48 193 8,5m ±20 12 10 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS008N04CTAG NVTFS008N04CTAG ONSEMI enriquecido unipolar - N-MOSFET 40 48 193 8,5m ±20 12 10 WDFN8 SMD bobina, cinta - - - - - - - -
NTTFS5C466NLTAG NTTFS5C466NLTAG ONSEMI enriquecido unipolar - N-MOSFET 40 51 200 7,3m ±20 19 16 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS5C466NLTAG NVTFS5C466NLTAG ONSEMI enriquecido unipolar - N-MOSFET 40 51 214 7,3m ±20 19 16 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS5C466NLWFTAG NVTFS5C466NLWFTAG ONSEMI enriquecido unipolar - N-MOSFET 40 51 214 7,3m ±20 19 16 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS005N04CTAG NVTFS005N04CTAG ONSEMI enriquecido unipolar - N-MOSFET 40 69 297 5,6m ±20 16 16 WDFN8 SMD bobina, cinta - - - - - - - -
NTTFS5C460NLTAG NTTFS5C460NLTAG ONSEMI enriquecido unipolar - N-MOSFET 40 74 321 4,8m ±20 16 11 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS5C460NLTAG NVTFS5C460NLTAG ONSEMI enriquecido unipolar - N-MOSFET 40 74 321 4,8m ±20 25 11 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS5C460NLWFTAG NVTFS5C460NLWFTAG ONSEMI enriquecido unipolar - N-MOSFET 40 74 321 4,8m ±20 25 11 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS004N04CTAG NVTFS004N04CTAG ONSEMI enriquecido unipolar - N-MOSFET 40 77 338 4,9m ±20 18 18 WDFN8 SMD bobina, cinta - - - - - - - -
NTTFS5C454NLTAG NTTFS5C454NLTAG ONSEMI enriquecido unipolar - N-MOSFET 40 85 520 3,8m ±20 27 18 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS5C454NLTAG NVTFS5C454NLTAG ONSEMI enriquecido unipolar - N-MOSFET 40 85 520 4m ±20 27 18 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS003N04CTAG NVTFS003N04CTAG ONSEMI enriquecido unipolar - N-MOSFET 40 103 484 3,5m ±20 22 23 WDFN8 SMD bobina, cinta - - - - - - - -
NTTFS2D8N04HLTAG NTTFS2D8N04HLTAG ONSEMI enriquecido unipolar - N-MOSFET 40 104 216 2,75m ±20 63 32 WDFN8 SMD bobina, cinta - - - - - - - -
NTTFS5C453NLTAG NTTFS5C453NLTAG ONSEMI enriquecido unipolar - N-MOSFET 40 107 740 3m ±20 34 35 WDFN8 SMD bobina, cinta - - - - - - - -
NTTFS5C453NLTWG NTTFS5C453NLTWG ONSEMI enriquecido unipolar - N-MOSFET 40 107 740 3m ±20 34 35 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS5C453NLTAG NVTFS5C453NLTAG ONSEMI enriquecido unipolar - N-MOSFET 40 107 740 3,1m ±20 34 35 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS5C453NLWFTAG NVTFS5C453NLWFTAG ONSEMI enriquecido unipolar - N-MOSFET 40 107 740 3,1m ±20 34 35 WDFN8 SMD bobina, cinta - - - - - - - -
NTTFS002N04CTAG NTTFS002N04CTAG ONSEMI enriquecido unipolar - N-MOSFET 40 136 676 2,4m ±20 27 34 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS002N04CTAG NVTFS002N04CTAG ONSEMI enriquecido unipolar - N-MOSFET 40 136 676 2,4m ±20 27 34 WDFN8 SMD bobina, cinta - - - - - - - -
NTTFS002N04CLTAG NTTFS002N04CLTAG ONSEMI enriquecido unipolar - N-MOSFET 40 142 706 2,2m ±20 27 49 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS002N04CLTAG NVTFS002N04CLTAG ONSEMI enriquecido unipolar - N-MOSFET 40 142 706 2,2m ±20 27 49 WDFN8 SMD bobina, cinta - - - - - - - -
NVLJWS6D0N04CLTAG NVLJWS6D0N04CLTAG ONSEMI enriquecido unipolar - N-MOSFET 40 68 277 5m ±20 23 20 WDFNW6 SMD bobina, cinta - - - - - - - -
NVTFS5C478NLWFTAG NVTFS5C478NLWFTAG ONSEMI enriquecido unipolar - N-MOSFET 40 26 104 14m ±20 10 8 WDFNW8 SMD bobina, cinta - - - - - - - -
NVTFS5C471NLWFTAG NVTFS5C471NLWFTAG ONSEMI enriquecido unipolar - N-MOSFET 40 41 163 9m ±20 15 12 WDFNW8 SMD bobina, cinta - - - - - - - -
NVTFWS008N04CTAG NVTFWS008N04CTAG ONSEMI enriquecido unipolar - N-MOSFET 40 48 193 8,5m ±20 12 10 WDFNW8 SMD bobina, cinta - - - - - - - -
NVTFWS005N04CTAG NVTFWS005N04CTAG ONSEMI enriquecido unipolar - N-MOSFET 40 69 297 5,6m ±20 16 16 WDFNW8 SMD bobina, cinta - - - - - - - -
NVTFS5C454NLWFTAG NVTFS5C454NLWFTAG ONSEMI enriquecido unipolar - N-MOSFET 40 85 520 4m ±20 27 18 WDFNW8 SMD bobina, cinta - - - - - - - -
NVTFWS003N04CTAG NVTFWS003N04CTAG ONSEMI enriquecido unipolar - N-MOSFET 40 103 484 3,5m ±20 22 23 WDFNW8 SMD bobina, cinta - - - - - - - -
NVTFWS002N04CTAG NVTFWS002N04CTAG ONSEMI enriquecido unipolar - N-MOSFET 40 136 676 2,4m ±20 27 34 WDFNW8 SMD bobina, cinta - - - - - - - -
NVTFWS002N04CLTAG NVTFWS002N04CLTAG ONSEMI enriquecido unipolar - N-MOSFET 40 142 706 2,2m ±20 27 49 WDFNW8 SMD bobina, cinta - - - - - - - -
NTTFD4D0N04HLTWG NTTFD4D0N04HLTWG ONSEMI enriquecido unipolar - N-MOSFET x2 40 60 349 4,5m ±20 26 18 WQFN12 SMD bobina, cinta - - - - - - - -
RFD14N05LSM RFD14N05LSM ONSEMI enriquecido unipolar - N-MOSFET 50 14 - 100m ±10 48 40 DPAK SMD bobina, cinta logic level - - - - - - -
RFD14N05LSM9A RFD14N05LSM9A ONSEMI enriquecido unipolar - N-MOSFET 50 14 - 100m ±10 48 40 DPAK SMD bobina, cinta - - - - - - - -
RFD14N05SM9A RFD14N05SM9A ONSEMI enriquecido unipolar - N-MOSFET 50 14 - 100m ±20 48 40 DPAK SMD bobina, cinta - - - - - - - -
RFD16N05LSM9A RFD16N05LSM9A ONSEMI enriquecido unipolar - N-MOSFET 50 16 - 56m 60 80 DPAK SMD bobina, cinta - - - - - - - -
RFD16N05SM9A RFD16N05SM9A ONSEMI enriquecido unipolar - N-MOSFET 50 16 - 47m ±20 72 80 DPAK SMD bobina, cinta - - - - - - - -
BSS138W BSS138W ONSEMI enriquecido unipolar - N-MOSFET 50 0,21 - 5,8 ±20 0,34 - SC70, SOT323 SMD bobina, cinta - - - - - - - -
BSS138L BSS138L ONSEMI enriquecido unipolar - N-MOSFET 50 0,2 0,8 3,5 ±20 0,225 - SOT23 SMD bobina, cinta - - - - - - - -
BSS138LT1G BSS138LT1G ONSEMI enriquecido unipolar - N-MOSFET 50 0,2 - 3,5 ±20 0,225 - SOT23 SMD bobina, cinta - - - - - - - -
BSS138LT3G BSS138LT3G ONSEMI enriquecido unipolar - N-MOSFET 50 0,2 0,8 3,5 ±20 0,225 - SOT23 SMD bobina, cinta - - - - - - - -
BVSS138LT1G BVSS138LT1G ONSEMI enriquecido unipolar - N-MOSFET 50 0,2 - 3,5 ±20 0,225 - SOT23 SMD bobina, cinta - - - - - - - -
BSS138-G-ONS BSS138-G ONSEMI enriquecido unipolar - N-MOSFET 50 0,22 - 3,5 ±20 0,36 1,7 SOT23 SMD bobina, cinta - - - - - - - -
BSS138K-ONS BSS138K ONSEMI enriquecido unipolar - N-MOSFET 50 0,22 - 1,6 ±12 0,35 2,4 SOT23 SMD bobina, cinta - - - - - - - -
BSS138-ONS BSS138 ONSEMI enriquecido unipolar - N-MOSFET 50 0,22 - 3,5 ±20 0,36 1,7 SOT23 SMD bobina, cinta - - - - - - - -
NDC7002N NDC7002N ONSEMI enriquecido unipolar - N-MOSFET x2 50 0,51 - 4 ±20 0,96 1 SuperSOT-6 SMD bobina, cinta - - - - - - - -
BUZ11 BUZ11-NR4941 ONSEMI enriquecido unipolar - N-MOSFET 50 30 - 40m ±20 75 - TO220AB THT tubo - - - - - - - -
NCV8440ASTT1G NCV8440ASTT1G ONSEMI enriquecido unipolar - N-MOSFET 52 2,6 10 180m ±15 1,69 4,5 SOT223 SMD bobina, cinta - - - - ESD - - -
HUF75345S3ST HUF75345S3ST ONSEMI enriquecido unipolar - N-MOSFET 55 75 - 7m ±20 325 220 D2PAK-3 SMD - - - - - - - - -
HUF75321D3ST HUF75321D3ST ONSEMI enriquecido unipolar - N-MOSFET 55 20 - 36m ±20 93 36 TO252AA SMD - - - - - - - - -
HUF75329D3ST HUF75329D3ST ONSEMI enriquecido unipolar - N-MOSFET 55 20 - 26m ±20 128 50 TO252AA SMD - - - - - - - - -
HUF75321P3 HUF75321P3 ONSEMI enriquecido unipolar UltraFET® N-MOSFET 55 31 - 34m ±20 93 44 TO220AB THT tubo - - - - - - - -
HUF75332P3 HUF75332P3 ONSEMI enriquecido unipolar UltraFET® N-MOSFET 55 60 - 16m ±20 145 85 TO220AB THT tubo - - - - - - - -
HUF75339P3 HUF75339P3 ONSEMI enriquecido unipolar UltraFET® N-MOSFET 55 75 - 12m ±20 200 130 TO220AB THT tubo - - - - - - - -
HUF75344P3 HUF75344P3 ONSEMI enriquecido unipolar - N-MOSFET 55 75 - 8m ±20 285 - TO220AB THT tubo - - - - - - - -
HUF75345P3 HUF75345P3 ONSEMI enriquecido unipolar UltraFET® N-MOSFET 55 75 - 7m ±20 325 275 TO220AB THT tubo - - - - - - - -
HUF75344G3 HUF75344G3 ONSEMI enriquecido unipolar UltraFET® N-MOSFET 55 75 - 8m ±20 285 7 TO247 THT tubo - - - - - - - -
HUF75345G3 HUF75345G3 ONSEMI enriquecido unipolar - N-MOSFET 55 75 - 7m ±20 325 220 TO247-3 THT - - - - - - - - -
FDB13AN06A0 FDB13AN06A0 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 60 62 - 34m ±20 115 29 D2PAK SMD bobina, cinta - - - - - - - -
FDB035AN06A0 FDB035AN06A0 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 60 80 - 7,1m ±20 310 124 D2PAK SMD bobina, cinta - - - - - - - -
FDB050AN06A0 FDB050AN06A0 ONSEMI enriquecido unipolar - N-MOSFET 60 80 - 5m ±20 245 61 D2PAK SMD bobina, cinta - - - - - - - -
FDB070AN06A0 FDB070AN06A0 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 60 80 - 15m ±20 175 66 D2PAK SMD bobina, cinta - - - - - - - -
FDB5800 FDB5800 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 60 80 - 12,6m ±20 242 135 D2PAK SMD bobina, cinta - - - - - - - -
FDB86563-F085 FDB86563-F085 ONSEMI enriquecido unipolar - N-MOSFET 60 110 - 1,8m ±20 333 126 D2PAK SMD bobina, cinta - - - - - - - -
NDB5060L NDB5060L ONSEMI enriquecido unipolar - N-MOSFET 60 26 78 50m ±16 68 17 D2PAK-3 SMD bobina, cinta - - - - - - - -
FDB0170N607L FDB0170N607L ONSEMI enriquecido unipolar - N-MOSFET 60 300 1620 1,4m ±20 250 173 D2PAK-7 SMD bobina, cinta - - - - - - - -
NVMFS5C680NLT1G NVMFS5C680NLT1G ONSEMI enriquecido unipolar - N-MOSFET 60 21 87 27,5m ±20 12 5,8 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS024N06CT1G NVMFS024N06CT1G ONSEMI enriquecido unipolar - N-MOSFET 60 25 158 22m ±20 14 5,7 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS5C682NLAFT1G NVMFS5C682NLAFT1G ONSEMI enriquecido unipolar - N-MOSFET 60 25 130 21m ±20 14 5 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS016N06CT1G NVMFS016N06CT1G ONSEMI enriquecido unipolar - N-MOSFET 60 33 226 15,6m ±20 18 6,9 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS5C677NLT1G NVMFS5C677NLT1G ONSEMI enriquecido unipolar - N-MOSFET 60 36 166 15m ±20 18 9,7 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS5H610NLT1G NTMFS5H610NLT1G ONSEMI enriquecido unipolar - N-MOSFET 60 44 222 10m ±20 17 13,7 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS5C673NT1G NTMFS5C673NT1G ONSEMI enriquecido unipolar - N-MOSFET 60 50 290 10,7m ±20 23 9,6 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS5C673NLAFT1G NVMFS5C673NLAFT1G ONSEMI enriquecido unipolar - N-MOSFET 60 50 290 9,2m ±20 23 9,5 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS5H663NLT1G NVMFS5H663NLT1G ONSEMI enriquecido unipolar - N-MOSFET 60 67 359 7,2m ±20 31,3 17 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS5H663NLWFT1G NVMFS5H663NLWFT1G ONSEMI enriquecido unipolar - N-MOSFET 60 67 359 7,2m ±20 31,3 17 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS5C670NLAFT1G NVMFS5C670NLAFT1G ONSEMI enriquecido unipolar - N-MOSFET 60 71 440 6,1m ±20 31 20 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS5C670NLT1G NVMFS5C670NLT1G ONSEMI enriquecido unipolar - N-MOSFET 60 71 440 6,1m ±20 31 20 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS5C670NT1G NVMFS5C670NT1G ONSEMI enriquecido unipolar - N-MOSFET 60 71 440 7m ±20 31 14,4 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS5C645NT1G NVMFS5C645NT1G ONSEMI enriquecido unipolar - N-MOSFET 60 92 820 4,6m ±20 40 20,4 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS5C646NLT1G NTMFS5C646NLT1G ONSEMI enriquecido unipolar - N-MOSFET 60 93 750 4,7m ±20 40 33,7 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS5C646NLAFT1G NVMFS5C646NLAFT1G ONSEMI enriquecido unipolar - N-MOSFET 60 93 750 4,7m ±20 40 33,7 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS5C645NLT1G NTMFS5C645NLT1G ONSEMI enriquecido unipolar - N-MOSFET 60 100 820 4m ±20 40 34 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS5C645NLAFT1G NVMFS5C645NLAFT1G ONSEMI enriquecido unipolar - N-MOSFET 60 100 820 4m ±20 40 34 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS5H630NLT1G NTMFS5H630NLT1G ONSEMI enriquecido unipolar - N-MOSFET 60 120 748 3,1m ±20 36 35 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS5C638NLT1G NVMFS5C638NLT1G ONSEMI enriquecido unipolar - N-MOSFET 60 133 811 3m ±20 50 40,7 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS5C628NLT1G NTMFS5C628NLT1G ONSEMI enriquecido unipolar - N-MOSFET 60 150 900 2,4m ±20 56 52 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS5C628NT1G NTMFS5C628NT1G ONSEMI enriquecido unipolar - N-MOSFET 60 150 900 3m ±20 56 34 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS5C628NLAFT1G NVMFS5C628NLAFT1G ONSEMI enriquecido unipolar - N-MOSFET 60 150 900 2,4m ±20 56 52 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS5C628NLT1G NVMFS5C628NLT1G ONSEMI enriquecido unipolar - N-MOSFET 60 150 900 2,4m ±20 56 52 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS5C628NT1G NVMFS5C628NT1G ONSEMI enriquecido unipolar - N-MOSFET 60 150 900 3m ±20 56 34 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS5H615NLT1G NTMFS5H615NLT1G ONSEMI enriquecido unipolar - N-MOSFET 60 185 900 1,8m ±20 55 63 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS5C612NLT1G NTMFS5C612NLT1G ONSEMI enriquecido unipolar - N-MOSFET 60 235 900 1,5m ±20 83 91 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS5H600NLT1G NTMFS5H600NLT1G ONSEMI enriquecido unipolar - N-MOSFET 60 250 900 1,3m ±20 63 89 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS5C612NLAFT1G NVMFS5C612NLAFT1G ONSEMI enriquecido unipolar - N-MOSFET 60 250 900 1,36m ±20 83 91 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS5C612NLT1G NVMFS5C612NLT1G ONSEMI enriquecido unipolar - N-MOSFET 60 250 900 1,36m ±20 83 91 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS5H600NLT1G NVMFS5H600NLT1G ONSEMI enriquecido unipolar - N-MOSFET 60 250 900 1,3m ±20 63 89 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS5C604NLAFT1G NVMFS5C604NLAFT1G ONSEMI enriquecido unipolar - N-MOSFET 60 287 900 1,2m ±20 100 120 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS5C604NT1G NVMFS5C604NT1G ONSEMI enriquecido unipolar - N-MOSFET 60 288 900 1,2m ±20 100 80 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS024N06CT1G NTMFS024N06CT1G ONSEMI enriquecido unipolar - N-MOSFET 60 17 158 22m ±20 14 5,7 DFN5x6 SMD bobina, cinta - - - - - - - -
NTMFS5C673NLT1G NTMFS5C673NLT1G ONSEMI enriquecido unipolar - N-MOSFET 60 35 - 9,2m ±20 23 - DFN5x6 SMD bobina, cinta - - - - - - - -
NTMFS5C670NLT1G NTMFS5C670NLT1G ONSEMI enriquecido unipolar - N-MOSFET 60 50 440 8,8m ±20 1,8 20 DFN5x6 SMD bobina, cinta - - - - - - - -
NTMFS5C604NLT1G NTMFS5C604NLT1G ONSEMI enriquecido unipolar - N-MOSFET 60 203 - 1,2m ±20 100 - DFN5x6 SMD bobina, cinta - - - - - - - -
NVMFS5C604NLT1G NVMFS5C604NLT1G ONSEMI enriquecido unipolar - N-MOSFET 60 203 - 1,2m ±20 100 - DFN5x6 SMD bobina, cinta - - - - - - - -
NVMFSC1D6N06CL NVMFSC1D6N06CL ONSEMI enriquecido unipolar - N-MOSFET 60 224 900 1,5m ±20 83 91 DFN8 SMD bobina, cinta - - - - - - - -
NTMFSC1D6N06CL NTMFSC1D6N06CL ONSEMI enriquecido unipolar - N-MOSFET 60 235 900 1,5m ±20 166 91 DFN8 SMD bobina, cinta - - - - - - - -
NTMFD030N06CT1G NTMFD030N06CT1G ONSEMI enriquecido unipolar - N-MOSFET x2 60 19 63 29,7m ±20 11 4,7 DFN8 SMD bobina, cinta - - - - - - - -
NVMFWD030N06CT1G NVMFWD030N06CT1G ONSEMI enriquecido unipolar - N-MOSFET x2 60 19 63 29,7m ±20 11 4,7 DFN8 SMD bobina, cinta - - - - - - - -
NTMFD5C680NLT1G NTMFD5C680NLT1G ONSEMI enriquecido unipolar - N-MOSFET x2 60 20 66 28m ±20 12 5 DFN8 SMD bobina, cinta - - - - - - - -
NVMFD5C680NLT1G NVMFD5C680NLT1G ONSEMI enriquecido unipolar - N-MOSFET x2 60 20 66 28m ±20 12 5 DFN8 SMD bobina, cinta - - - - - - - -
NVMFD5C680NLWFT1G NVMFD5C680NLWFT1G ONSEMI enriquecido unipolar - N-MOSFET x2 60 20 66 28m ±20 12 5 DFN8 SMD bobina, cinta - - - - - - - -
NVMFD024N06CT1G NVMFD024N06CT1G ONSEMI enriquecido unipolar - N-MOSFET x2 60 24 85 22,6m ±20 14 5,7 DFN8 SMD bobina, cinta - - - - - - - -
NVMFWD024N06CT1G NVMFWD024N06CT1G ONSEMI enriquecido unipolar - N-MOSFET x2 60 24 85 22,6m ±20 14 5,7 DFN8 SMD bobina, cinta - - - - - - - -
NVMFD5C672NLT1G NVMFD5C672NLT1G ONSEMI enriquecido unipolar - N-MOSFET x2 60 40 161 11,9m ±20 21 12,3 DFN8 SMD bobina, cinta - - - - - - - -
NVMFD5C672NLWFT1G NVMFD5C672NLWFT1G ONSEMI enriquecido unipolar - N-MOSFET x2 60 40 161 11,9m ±20 21 12,3 DFN8 SMD bobina, cinta - - - - - - - -
NTMFD5C674NLT1G NTMFD5C674NLT1G ONSEMI enriquecido unipolar - N-MOSFET x2 60 42 119 14,4m ±20 18 10 DFN8 SMD bobina, cinta - - - - - - - -
NVMFD5C674NLWFT1G NVMFD5C674NLWFT1G ONSEMI enriquecido unipolar - N-MOSFET x2 60 42 119 14,4m ±20 18 10 DFN8 SMD bobina, cinta - - - - - - - -
NTMFD5C672NLT1G NTMFD5C672NLT1G ONSEMI enriquecido unipolar - N-MOSFET x2 60 49 146 11,9m ±20 22 12,3 DFN8 SMD bobina, cinta - - - - - - - -
NVMFD5C668NLT1G NVMFD5C668NLT1G ONSEMI enriquecido unipolar - N-MOSFET x2 60 68 454 6,5m ±20 29 21,3 DFN8 SMD bobina, cinta - - - - - - - -
NVMFD5C668NLWFT1G NVMFD5C668NLWFT1G ONSEMI enriquecido unipolar - N-MOSFET x2 60 68 454 6,5m ±20 29 21,3 DFN8 SMD bobina, cinta - - - - - - - -
NTMFD5C650NLT1G NTMFD5C650NLT1G ONSEMI enriquecido unipolar - N-MOSFET x2 60 111 502 4,2m ±20 62 37 DFN8 SMD bobina, cinta - - - - - - - -
NVMFD5C650NLT1G NVMFD5C650NLT1G ONSEMI enriquecido unipolar - N-MOSFET x2 60 111 502 4,2m ±20 62 37 DFN8 SMD bobina, cinta - - - - - - - -
NVMFD5C650NLWFT1G NVMFD5C650NLWFT1G ONSEMI enriquecido unipolar - N-MOSFET x2 60 111 502 4,2m ±20 62 37 DFN8 SMD bobina, cinta - - - - - - - -
NVMFS5C680NLWFT1G NVMFS5C680NLWFT1G ONSEMI enriquecido unipolar - N-MOSFET 60 21 87 27,5m ±20 12 5,8 DFNW5 SMD bobina, cinta - - - - - - - -
NVMFWS016N06CT1G NVMFWS016N06CT1G ONSEMI enriquecido unipolar - N-MOSFET 60 33 226 15,6m ±20 18 6,9 DFNW5 SMD bobina, cinta - - - - - - - -
NVMFS5C677NLWFT1G NVMFS5C677NLWFT1G ONSEMI enriquecido unipolar - N-MOSFET 60 36 166 15m ±20 18 9,7 DFNW5 SMD bobina, cinta - - - - - - - -
NVMFS5C638NLWFT1G NVMFS5C638NLWFT1G ONSEMI enriquecido unipolar - N-MOSFET 60 133 811 3m ±20 50 40,7 DFNW5 SMD bobina, cinta - - - - - - - -
NVMFS5C628NWFT1G NVMFS5C628NWFT1G ONSEMI enriquecido unipolar - N-MOSFET 60 150 900 3m ±20 56 34 DFNW5 SMD bobina, cinta - - - - - - - -
NVMFS5C612NWFT1G NVMFS5C612NWFT1G ONSEMI enriquecido unipolar - N-MOSFET 60 225 900 1,65m ±20 83 62 DFNW5 SMD bobina, cinta - - - - - - - -
NVMFS5H600NLWFT1G NVMFS5H600NLWFT1G ONSEMI enriquecido unipolar - N-MOSFET 60 250 900 1,3m ±20 63 89 DFNW5 SMD bobina, cinta - - - - - - - -
NVMFS5C604NLWFT1G NVMFS5C604NLWFT1G ONSEMI enriquecido unipolar - N-MOSFET 60 287 900 1,2m ±20 100 120 DFNW5 SMD bobina, cinta - - - - - - - -
FDMT80060DC FDMT80060DC ONSEMI enriquecido unipolar - N-MOSFET 60 184 1825 1,7m ±20 156 238 DFNW8 SMD bobina, cinta - - - - - - - -
NVMTS001N06CTXG NVMTS001N06CTXG ONSEMI enriquecido unipolar - N-MOSFET 60 376 900 910µ ±20 122 113 DFNW8 SMD bobina, cinta - - - - - - - -
NVMTS001N06CLTXG NVMTS001N06CLTXG ONSEMI enriquecido unipolar - N-MOSFET 60 398,2 900 810µ ±20 122 165 DFNW8 SMD bobina, cinta - - - - - - - -
NTMTS0D7N06CLTXG NTMTS0D7N06CLTXG ONSEMI enriquecido unipolar - N-MOSFET 60 477 900 680µ ±20 147,3 225 DFNW8 SMD bobina, cinta - - - - - - - -
NVMTS0D7N06CLTXG NVMTS0D7N06CLTXG ONSEMI enriquecido unipolar - N-MOSFET 60 477 900 680µ ±20 147,3 225 DFNW8 SMD bobina, cinta - - - - - - - -
NTD3055L170T4G NTD3055L170T4G ONSEMI enriquecido unipolar - N-MOSFET 60 3 - 170m ±15 28,5 - DPAK SMD bobina, cinta - - - - - - - -
HUF76407D3ST HUF76407D3ST ONSEMI enriquecido unipolar - N-MOSFET 60 6 - 92m ±16 38 - DPAK SMD bobina, cinta - - - - - - - -
FQD13N06LTM FQD13N06LTM ONSEMI enriquecido unipolar QFET® N-MOSFET 60 7 - 145m ±20 28 6,4 DPAK SMD bobina, cinta - - - - - - - -
RFD12N06RLESM9A RFD12N06RLESM9A ONSEMI enriquecido unipolar UltraFET® N-MOSFET 60 8 - 75m ±16 49 15 DPAK SMD bobina, cinta - - - - - - - -
FDD5680 FDD5680 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 60 8,5 100 42m ±20 60 46 DPAK SMD bobina, cinta - - - - - - - -
NTD3055-150T4G NTD3055-150T4G ONSEMI enriquecido unipolar - N-MOSFET 60 9 27 150m ±20 28,8 7,1 DPAK SMD bobina, cinta - - - - - - - -
NVD3055-150T4GVF01 NVD3055-150T4G-VF01 ONSEMI enriquecido unipolar - N-MOSFET 60 9 45 150m ±20 28,8 7,1 DPAK SMD bobina, cinta - - - - - - - -
NTD18N06LT4G NTD18N06LT4G ONSEMI enriquecido unipolar - N-MOSFET 60 10 - 65m ±15 55 - DPAK SMD bobina, cinta - - - - - - - -
NTD20N06T4G NTD20N06T4G ONSEMI enriquecido unipolar - N-MOSFET 60 10 60 37,5m ±20 60 21,2 DPAK SMD bobina, cinta - - - - - - - -
NTDV20N06T4G-VF01 NTDV20N06T4G-VF01 ONSEMI enriquecido unipolar - N-MOSFET 60 10 60 37,5m ±20 60 21,2 DPAK SMD bobina, cinta - - - - - - - -
RFD3055LESM9A RFD3055LESM9A ONSEMI enriquecido unipolar - N-MOSFET 60 11 - 107m ±16 38 11,3 DPAK SMD bobina, cinta - - - - - - - -
NTD3055-094T4G NTD3055-094T4G ONSEMI enriquecido unipolar - N-MOSFET 60 12 45 94m ±20 48 10,9 DPAK SMD bobina, cinta - - - - - - - -
NTD3055L104T4G NTD3055L104T4G ONSEMI enriquecido unipolar - N-MOSFET 60 12 45 104m ±15 48 20 DPAK SMD bobina, cinta - - - - - - - -
NVD3055-094T4GVF01 NVD3055-094T4G-VF01 ONSEMI enriquecido unipolar - N-MOSFET 60 12 45 94m ±20 48 10,9 DPAK SMD bobina, cinta - - - - - - - -
NVD5C688NLT4G NVD5C688NLT4G ONSEMI enriquecido unipolar - N-MOSFET 60 12 77 27,4m ±16 9 7 DPAK SMD bobina, cinta - - - - - - - -
STDV3055L104T4G STDV3055L104T4G ONSEMI enriquecido unipolar - N-MOSFET 60 12 45 104m ±15 48 7,4 DPAK SMD bobina, cinta - - - - - - - -
FQD30N06TM FQD30N06TM ONSEMI enriquecido unipolar - N-MOSFET 60 14,3 90,8 45m ±25 44 25 DPAK SMD bobina, cinta - - - - - - - -
RFD16N06LESM9A RFD16N06LESM9A ONSEMI enriquecido unipolar - N-MOSFET 60 16 - 47m ±8 90 62 DPAK SMD bobina, cinta - - - - - - - -
NTD24N06LT4G NTD24N06LT4G ONSEMI enriquecido unipolar - N-MOSFET 60 24 - 36m ±15 62,5 16 DPAK SMD bobina, cinta - - - - - - - -
NVD5C684NLT4G NVD5C684NLT4G ONSEMI enriquecido unipolar - N-MOSFET 60 38 130 16,5m ±20 13 9,6 DPAK SMD bobina, cinta - - - - - - - -
NVD5C668NLT4G NVD5C668NLT4G ONSEMI enriquecido unipolar - N-MOSFET 60 49 250 8,9m ±20 22 18,7 DPAK SMD bobina, cinta - - - - - - - -
FDD10AN06A0 FDD10AN06A0 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 60 50 - 27m ±20 135 4,6 DPAK SMD bobina, cinta - - - - - - - -
FDD13AN06A0 FDD13AN06A0 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 60 50 - 34m ±20 115 29 DPAK SMD bobina, cinta - - - - - - - -
FDD5353 FDD5353 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 60 50 - 20,3m ±20 69 65 DPAK SMD bobina, cinta - - - - - - - -
FDD86540 FDD86540 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 60 86 240 6,3m ±20 127 90 DPAK SMD bobina, cinta - - - - - - - -
NVD5C648NLT4G NVD5C648NLT4G ONSEMI enriquecido unipolar - N-MOSFET 60 89 510 4,1m ±20 36 39 DPAK SMD bobina, cinta - - - - - - - -
FDD86567-F085 FDD86567-F085 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 60 100 - 6m ±20 227 82 DPAK SMD bobina, cinta - - - rama automotriz - - - -
NTD5C632NLT4G NTD5C632NLT4G ONSEMI enriquecido unipolar - N-MOSFET 60 155 900 2,5m ±20 58 34 DPAK SMD bobina, cinta - - - - - - - -
NVD5C632NLT4G NVD5C632NLT4G ONSEMI enriquecido unipolar - N-MOSFET 60 155 900 2,5m ±20 58 78 DPAK SMD bobina, cinta - - - - - - - -
NTDV20P06LT4G-VF01 NTDV20P06LT4G-VF01 ONSEMI enriquecido unipolar - P-MOSFET 60 15,5 50 143m ±20 65 15 DPAK SMD bobina, cinta - - - - - - - -
FDBL0150N60 FDBL0150N60 ONSEMI enriquecido unipolar - N-MOSFET 60 240 - 1,5m ±20 357 130 H-PSOF8L SMD bobina, cinta - - - - - - - -
FDBL86563-F085 FDBL86563-F085 ONSEMI enriquecido unipolar - N-MOSFET 60 240 - 1,5m ±20 357 130 H-PSOF8L SMD bobina, cinta - - - - - - - -
FDBL86566-F085 FDBL86566-F085 ONSEMI enriquecido unipolar - N-MOSFET 60 240 - 2,4m ±20 300 80 H-PSOF8L SMD bobina, cinta - - - - - - - -
FDBL0110N60 FDBL0110N60 ONSEMI enriquecido unipolar - N-MOSFET 60 300 - 1,1m ±20 429 170 H-PSOF8L SMD - - - - - - - - -
FDBL86361-F085 FDBL86361-F085 ONSEMI enriquecido unipolar - N-MOSFET 60 300 - 3,1m ±20 429 - H-PSOF8L SMD bobina, cinta - - - rama automotriz - - - -
FDBL86561-F085 FDBL86561-F085 ONSEMI enriquecido unipolar - N-MOSFET 60 300 - 1,1m ±20 429 170 H-PSOF8L SMD bobina, cinta - - - - - - - -
NTBLS001N06C NTBLS001N06C ONSEMI enriquecido unipolar - N-MOSFET 60 422 900 900µ ±20 284 143 H-PSOF8L SMD bobina, cinta - - - - - - - -
NVTYS010N06CLTWG NVTYS010N06CLTWG ONSEMI enriquecido unipolar - N-MOSFET 60 51 217 9,8m ±20 23 13 LFPAK33 SMD bobina, cinta - - - - - - - -
NVTYS005N06CLTWG NVTYS005N06CLTWG ONSEMI enriquecido unipolar - N-MOSFET 60 89 430 5,3m ±20 38 25 LFPAK33 SMD bobina, cinta - - - - - - - -
NTMYS025N06CLTWG NTMYS025N06CLTWG ONSEMI enriquecido unipolar - N-MOSFET 60 21 103 27,5m ±20 7,6 5,8 LFPAK56 SMD bobina, cinta - - - - - - - -
NVMYS025N06CLTWG NVMYS025N06CLTWG ONSEMI enriquecido unipolar - N-MOSFET 60 21 103 27,5m ±20 7,6 5,8 LFPAK56 SMD bobina, cinta - - - - - - - -
NTMYS021N06CLTWG NTMYS021N06CLTWG ONSEMI enriquecido unipolar - N-MOSFET 60 27 131 21m ±20 9 5 LFPAK56 SMD bobina, cinta - - - - - - - -
NVMYS021N06CLTWG NVMYS021N06CLTWG ONSEMI enriquecido unipolar - N-MOSFET 60 27 131 21m ±20 9 5 LFPAK56 SMD bobina, cinta - - - - - - - -
NVMYS014N06CLTWG NVMYS014N06CLTWG ONSEMI enriquecido unipolar - N-MOSFET 60 36 185 15m ±20 12 9,7 LFPAK56 SMD bobina, cinta - - - - - - - -
NTMYS014N06CLTWG NTMYS014N06CLTWG ONSEMI enriquecido unipolar - N-MOSFET 60 37 185 15m ±20 12 9,7 LFPAK56 SMD bobina, cinta - - - - - - - -
NVMYS9D3N06CLTWG NVMYS9D3N06CLTWG ONSEMI enriquecido unipolar - N-MOSFET 60 50 290 9,2m ±20 23 9,5 LFPAK56 SMD bobina, cinta - - - - - - - -
NVMYS6D2N06CLTWG NVMYS6D2N06CLTWG ONSEMI enriquecido unipolar - N-MOSFET 60 71 440 6,1m ±20 31 20 LFPAK56 SMD bobina, cinta - - - - - - - -
NTMYS4D1N06CLTWG NTMYS4D1N06CLTWG ONSEMI enriquecido unipolar - N-MOSFET 60 100 820 4m ±20 40 34 LFPAK56 SMD bobina, cinta - - - - - - - -
NVMYS4D1N06CLTWG NVMYS4D1N06CLTWG ONSEMI enriquecido unipolar - N-MOSFET 60 100 820 4m ±20 40 34 LFPAK56 SMD bobina, cinta - - - - - - - -
NVMYS3D3N06CLTWG NVMYS3D3N06CLTWG ONSEMI enriquecido unipolar - N-MOSFET 60 133 811 3m ±20 32 40,7 LFPAK56 SMD bobina, cinta - - - - - - - -
NVMYS2D2N06CLTWG NVMYS2D2N06CLTWG ONSEMI enriquecido unipolar - N-MOSFET 60 185 900 2m ±20 67 69 LFPAK56 SMD bobina, cinta - - - - - - - -
NVMJD012N06CLTWG NVMJD012N06CLTWG ONSEMI enriquecido unipolar - N-MOSFET 60 42 153 11,9m ±20 21 11,5 LFPAK8 SMD bobina, cinta - - - - - - - -
NVMJS2D5N06CLTWG NVMJS2D5N06CLTWG ONSEMI enriquecido unipolar - N-MOSFET 60 164 900 2,4m ±20 56 52 LFPAK8 SMD bobina, cinta - - - - - - - -
NVMJS1D6N06CLTWG NVMJS1D6N06CLTWG ONSEMI enriquecido unipolar - N-MOSFET 60 250 900 1,36m ±20 83 91 LFPAK8 SMD bobina, cinta - - - - - - - -
NTMJS1D4N06CLTWG NTMJS1D4N06CLTWG ONSEMI enriquecido unipolar - N-MOSFET 60 262 900 1,3m ±20 90 103 LFPAK8 SMD bobina, cinta - - - - - - - -
NVMJS1D4N06CLTWG NVMJS1D4N06CLTWG ONSEMI enriquecido unipolar - N-MOSFET 60 262 900 1,3m ±20 90 103 LFPAK8 SMD bobina, cinta - - - - - - - -
FDMQ86530L FDMQ86530L ONSEMI enriquecido unipolar - N-MOSFET x4 60 8 50 17,5m ±20 22 33 MLP12 SMD bobina, cinta logic level; MOSFET H-Bridge - - - - - - -
FDMC86520L FDMC86520L ONSEMI enriquecido unipolar - N-MOSFET 60 22 60 11,7m ±20 40 64 Power33 SMD bobina, cinta - - - - - - - -
FDMC86570L FDMC86570L ONSEMI enriquecido unipolar - N-MOSFET 60 53 416 6,9m ±20 54 88 Power33 SMD bobina, cinta - - - - - - - -
FDMC86570LET60 FDMC86570LET60 ONSEMI enriquecido unipolar - N-MOSFET 60 62 436 6,9m ±20 65 88 Power33 SMD bobina, cinta - - - - - - - -
FDMC89521L FDMC89521L ONSEMI enriquecido unipolar - N-MOSFET x2 60 8,2 40 27m ±20 16 24 Power33 SMD bobina, cinta - - - - - - - -
FDMS86520L FDMS86520L ONSEMI enriquecido unipolar - N-MOSFET 60 22 60 11,8m ±20 69 63 Power56 SMD bobina, cinta - - - - - - - -
FDMS86520 FDMS86520 ONSEMI enriquecido unipolar - N-MOSFET 60 42 80 11m ±20 69 40 Power56 SMD bobina, cinta - - - - - - - -
FDMS86540 FDMS86540 ONSEMI enriquecido unipolar - N-MOSFET 60 82 642 4,8m ±20 96 90 Power56 SMD bobina, cinta - - - - - - - -
FDMS030N06B FDMS030N06B ONSEMI enriquecido unipolar - N-MOSFET 60 100 400 3m ±20 104 75 Power56 SMD bobina, cinta - - - - - - - -
FDMS86500DC FDMS86500DC ONSEMI enriquecido unipolar - N-MOSFET 60 108 200 3,7m ±20 125 107 Power56 SMD bobina, cinta - - - - - - - -
FDMS86550 FDMS86550 ONSEMI enriquecido unipolar - N-MOSFET 60 148 1021 2,6m ±20 156 154 Power56 SMD bobina, cinta - - - - - - - -
FDMS86550ET60 FDMS86550ET60 ONSEMI enriquecido unipolar - N-MOSFET 60 173 1068 2,6m ±20 187 154 Power56 SMD bobina, cinta - - - - - - - -
NTMTS001N06CTXG NTMTS001N06CTXG ONSEMI enriquecido unipolar - N-MOSFET 60 376 900 910µ ±20 122 113 Power88 SMD bobina, cinta - - - - - - - -
NTMTS001N06CLTXG NTMTS001N06CLTXG ONSEMI enriquecido unipolar - N-MOSFET 60 398,2 900 810µ ±20 122 165 Power88 SMD bobina, cinta - - - - - - - -
FDMD8260L FDMD8260L ONSEMI enriquecido unipolar - N-MOSFET x2 60 40 293 8,7m ±20 37 68 PQFN12 SMD bobina, cinta - - - - - - - -
FDMD8260LET60 FDMD8260LET60 ONSEMI enriquecido unipolar - N-MOSFET x2 60 47 304 8,7m ±20 44 68 PQFN12 SMD bobina, cinta - - - - - - - -
FDMS5672 FDMS5672 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 60 22 - 18m ±20 78 45 PQFN8 SMD bobina, cinta - - - - - - - -
FDMC86520DC FDMC86520DC ONSEMI enriquecido unipolar - N-MOSFET 60 40 80 10,2m ±20 73 40 PQFN8 SMD bobina, cinta - - - - - - - -
FDMS5352 FDMS5352 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 60 49 - 11,6m ±20 104 131 PQFN8 SMD bobina, cinta - - - - - - - -
FDMS86500L FDMS86500L ONSEMI enriquecido unipolar - N-MOSFET 60 100 799 3,7m ±20 104 165 PQFN8 SMD bobina, cinta - - - - - - - -
2N7002W-FAI 2N7002W ONSEMI enriquecido unipolar - N-MOSFET 60 0,115 - 1,6 ±20 0,2 - SC70, SOT323 SMD bobina, cinta - - - - - - - -
2V7002WT1G 2V7002WT1G ONSEMI enriquecido unipolar - N-MOSFET 60 0,22 1,4 2,5 ±20 0,28 0,7 SC70, SOT323 SMD bobina, cinta - - - rama automotriz ESD - - -
2N7002KW-ONS 2N7002KW ONSEMI enriquecido unipolar - N-MOSFET 60 0,31 1,2 3 ±20 0,3 - SC70, SOT323 SMD bobina, cinta - - - - ESD - - -
2N7002WT1G 2N7002WT1G ONSEMI enriquecido unipolar - N-MOSFET 60 0,34 - 1,19 ±20 0,33 0,7 SC70, SOT323 SMD bobina, cinta - - - - - - - -
2N7002DW-ONS 2N7002DW ONSEMI enriquecido unipolar PowerTrench® N-MOSFET x2 60 0,115 0,8 2 ±20 0,2 - SC70-6, SC88, SOT363 SMD bobina, cinta - - - - - - - -
NVJD5121NT1G NVJD5121NT1G ONSEMI enriquecido unipolar - N-MOSFET x2 60 0,212 - 1,6 ±20 0,25 - SC70-6, SC88, SOT363 SMD bobina, cinta - - - - - - - -
NTJD5121NT1G NTJD5121NT1G ONSEMI enriquecido unipolar - N-MOSFET x2 60 0,295 - 2,5 ±20 0,25 0,9 SC70-6, SC88, SOT363 SMD bobina, cinta - - - - ESD - - -
NVJD5121NT2G NVJD5121NT2G ONSEMI enriquecido unipolar - N-MOSFET x2 60 0,295 0,9 1,6 ±20 0,25 0,9 SC88 SMD bobina, cinta - - - - ESD - - -
FDS5351 FDS5351 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 60 6,1 - 58,8m ±20 5 27 SO8 SMD bobina, cinta - - - - - - - -
FDS5670 FDS5670 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 60 10 - 27m ±20 2,5 70 SO8 SMD bobina, cinta - - - - - - - -
FDS5672 FDS5672 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 60 12 - 23m ±20 2,5 45 SO8 SMD bobina, cinta - - - - - - - -
FDS86540 FDS86540 ONSEMI enriquecido unipolar - N-MOSFET 60 18 120 4,5m ±20 5 65 SO8 SMD bobina, cinta - - - - - - - -
FDS9945 FDS9945 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET x2 60 3,5 - 170m ±20 2 13 SO8 SMD bobina, cinta - - - - - - - -
HUFA76407DK8T-F085 HUFA76407DK8T-F085 ONSEMI enriquecido unipolar - N-MOSFET x2 60 3,5 - 105m ±16 2,5 9,4 SO8 SMD bobina, cinta - - - - - - - -
NDS9945 NDS9945 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET x2 60 3,5 - 300m ±20 2 30 SO8 SMD bobina, cinta - - - - - - - -
NTF3055L108T1G NTF3055L108T1G ONSEMI enriquecido unipolar - N-MOSFET 60 1,4 9 120m ±15 1,3 15 SOT223 SMD bobina, cinta - - - - - - - -
NVF3055L108T1G NVF3055L108T1G ONSEMI enriquecido unipolar - N-MOSFET 60 1,4 - 120m ±15 1,3 - SOT223 SMD bobina, cinta - - - - - - - -
FQT13N06LTF FQT13N06LTF ONSEMI enriquecido unipolar - N-MOSFET 60 2,24 11,2 110m ±20 2,1 6,4 SOT223 SMD bobina, cinta - - - - - - - -
FQT13N06TF FQT13N06TF ONSEMI enriquecido unipolar - N-MOSFET 60 2,24 11,2 140m ±25 2,1 7,5 SOT223 SMD bobina, cinta - - - - - - - -
NDT014 NDT014 ONSEMI enriquecido unipolar - N-MOSFET 60 2,7 10 200m ±20 3 5 SOT223 SMD bobina, cinta - - - - - - - -
NDT014L NDT014L ONSEMI enriquecido unipolar - N-MOSFET 60 2,8 10 200m ±20 3 5 SOT223 SMD bobina, cinta - - - - - - - -
NTF3055-100T1G NTF3055-100T1G ONSEMI enriquecido unipolar - N-MOSFET 60 3 - 110m ±20 2,1 10,6 SOT223 SMD bobina, cinta - - - - - - - -
NDT3055 NDT3055 ONSEMI enriquecido unipolar - N-MOSFET 60 4 25 100m ±20 3 9 SOT223 SMD bobina, cinta - - - - - - - -
NDT3055L NDT3055L ONSEMI enriquecido unipolar - N-MOSFET 60 4 - 180m ±20 3 20 SOT223 SMD bobina, cinta - - - - - - - -
2N7002LT1G 2N7002LT1G ONSEMI enriquecido unipolar - N-MOSFET 60 0,115 - 7,5 ±20 0,225 - SOT23 SMD bobina, cinta - - - - - - - -
2N7002LT3G 2N7002LT3G ONSEMI enriquecido unipolar - N-MOSFET 60 0,115 - 7,5 ±20 0,225 - SOT23 SMD bobina, cinta - - - - - - - -
2N7002LT7G 2N7002LT7G ONSEMI enriquecido unipolar - N-MOSFET 60 0,115 0,8 7,5 ±20 0,225 - SOT23 SMD bobina, cinta - - - - - - - -
2N7002-ONS 2N7002 ONSEMI enriquecido unipolar - N-MOSFET 60 0,115 0,8 13,5 ±20 0,2 - SOT23 SMD bobina, cinta - - - - - - - -
2V7002LT1G 2V7002LT1G ONSEMI enriquecido unipolar - N-MOSFET 60 0,115 - 7,5 ±20 0,225 - SOT23 SMD bobina, cinta - - - - - - - -
2N7002ET1G 2N7002ET1G ONSEMI enriquecido unipolar - N-MOSFET 60 0,22 1,2 1,2 ±20 0,42 0,81 SOT23 SMD bobina, cinta - - - - - - - -
2N7002ET7G 2N7002ET7G ONSEMI enriquecido unipolar - N-MOSFET 60 0,22 1,2 3 ±20 0,42 0,81 SOT23 SMD bobina, cinta - - - - - - - -
2N7002K 2N7002K ONSEMI enriquecido unipolar - N-MOSFET 60 0,27 5 1,6 ±20 0,42 0,7 SOT23 SMD bobina, cinta - - - - ESD - - -
NDS7002A NDS7002A ONSEMI enriquecido unipolar - N-MOSFET 60 0,28 1,5 5 ±20 0,3 - SOT23 SMD bobina, cinta - - - - - - - -
2V7002KT1G 2V7002KT1G ONSEMI enriquecido unipolar - N-MOSFET 60 0,3 - 2 ±20 0,35 - SOT23 SMD bobina, cinta - - - - - - - -
NTR5103NT1G NTR5103NT1G ONSEMI enriquecido unipolar - N-MOSFET 60 0,31 - 3 ±30 0,42 0,81 SOT23 SMD bobina, cinta - - - - - - - -
2N7002KT1G 2N7002KT1G ONSEMI enriquecido unipolar - N-MOSFET 60 0,38 - 2,5 ±20 0,42 0,7 SOT23 SMD bobina, cinta - - - - - - - -
2N7002KT7G 2N7002KT7G ONSEMI enriquecido unipolar - N-MOSFET 60 0,38 5 1,6 ±20 0,42 0,7 SOT23 SMD bobina, cinta - - - - ESD - - -
MMBF170 MMBF170 ONSEMI enriquecido unipolar - N-MOSFET 60 0,5 - 1,2 ±20 0,3 - SOT23 SMD bobina, cinta - - - - - - - -
MMBF170LT1G MMBF170LT1G ONSEMI enriquecido unipolar - N-MOSFET 60 0,5 - 5 ±20 0,225 - SOT23 SMD bobina, cinta - - - - - - - -
NVR5198NLT1G NVR5198NLT1G ONSEMI enriquecido unipolar - N-MOSFET 60 1,2 27 205m ±20 0,4 5,1 SOT23 SMD bobina, cinta - - - rama automotriz - - - -
NTR5198NLT1G NTR5198NLT1G ONSEMI enriquecido unipolar - N-MOSFET 60 1,6 - 155m ±20 0,6 - SOT23 SMD bobina, cinta - - - - - - - -
FDN86501LZ FDN86501LZ ONSEMI enriquecido unipolar - N-MOSFET 60 2,6 24 116m ±20 1,5 3,8 SOT23 SMD bobina, cinta - - - - - - - -
NTZD5110NT1G NTZD5110NT1G ONSEMI enriquecido unipolar - N-MOSFET x2 60 0,225 - 1,6 ±20 0,28 - SOT563F SMD bobina, cinta - - - - ESD - - -
FDN5630 FDN5630 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 60 1,7 - 180m ±20 0,5 10 SuperSOT-3 SMD bobina, cinta logic level - - - - - - -
FDN5632N-F085 FDN5632N-F085 ONSEMI enriquecido unipolar - N-MOSFET 60 1,7 - 135m ±20 1,1 - SuperSOT-3 SMD bobina, cinta - - - rama automotriz - - - -
FDC5612 FDC5612 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 60 4,3 - 94m ±20 1,6 18 SuperSOT-6 SMD bobina, cinta - - - - - - - -
NVMJST1D4N06CLTXG NVMJST1D4N06CLTXG ONSEMI enriquecido unipolar - N-MOSFET 60 198 900 1,49m ±20 58 92,2 TCPAK10 SMD bobina, cinta - - - - - - - -
NTMFSS1D5N06CL NTMFSS1D5N06CL ONSEMI enriquecido unipolar - N-MOSFET 60 237 1698 1,5m ±20 57 102,6 TDFN9 SMD bobina, cinta - - - - - - - -
NTMTS0D7N06CTXG NTMTS0D7N06CTXG ONSEMI enriquecido unipolar - N-MOSFET 60 464 900 720µ ±20 147,3 152 TDFNW8 SMD bobina, cinta - - - - - - - -
NVMTS0D7N06CTXG NVMTS0D7N06CTXG ONSEMI enriquecido unipolar - N-MOSFET 60 464 900 720µ ±20 147,3 152 TDFNW8 SMD bobina, cinta - - - - - - - -
FDD13AN06A0-F085 FDD13AN06A0-F085 ONSEMI enriquecido unipolar - N-MOSFET 60 50 - 13,5m ±20 115 22 TO252AA SMD bobina, cinta - - - - - - - -
HUF76429S3ST HUF76429S3ST ONSEMI enriquecido unipolar - N-MOSFET 60 44 - 25m ±16 110 38 TO263AB SMD - - - - - - - - -
HUF76439S3ST HUF76439S3ST ONSEMI enriquecido unipolar - N-MOSFET 60 75 - 12m ±16 180 70 TO263AB SMD - - - - - - - - -
FDC5661N-F085 FDC5661N-F085 ONSEMI enriquecido unipolar - N-MOSFET 60 4,3 20 60m ±20 1,6 14,5 TSOT23-6 SMD bobina, cinta - - - - - - - -
FDMA86551L FDMA86551L ONSEMI enriquecido unipolar - N-MOSFET 60 7,5 - 33m ±20 2,4 - WDFN6 SMD bobina, cinta - - - - - - - -
NTTFS030N06CTAG NTTFS030N06CTAG ONSEMI enriquecido unipolar - N-MOSFET 60 19 86 29,7m ±20 11 4,7 WDFN8 SMD bobina, cinta - - - - - - - -
NTTFS5C680NLTAG NTTFS5C680NLTAG ONSEMI enriquecido unipolar - N-MOSFET 60 20 80 26,5m ±20 10 6 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS5C680NLTAG NVTFS5C680NLTAG ONSEMI enriquecido unipolar - N-MOSFET 60 20 80 26,5m ±20 10 6 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS024N06CTAG NVTFS024N06CTAG ONSEMI enriquecido unipolar - N-MOSFET 60 24 112 22,6m ±20 14 5,7 WDFN8 SMD bobina, cinta - - - - - - - -
NTTFS020N06CTAG NTTFS020N06CTAG ONSEMI enriquecido unipolar - N-MOSFET 60 27 128 20,3m ±20 15 5,8 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS020N06CTAG NVTFS020N06CTAG ONSEMI enriquecido unipolar - N-MOSFET 60 27 128 20,3m ±20 15 5,8 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS016N06CTAG NVTFS016N06CTAG ONSEMI enriquecido unipolar - N-MOSFET 60 32 160 16,3m ±20 18 6,9 WDFN8 SMD bobina, cinta - - - - - - - -
NTTFS5C673NLTAG NTTFS5C673NLTAG ONSEMI enriquecido unipolar - N-MOSFET 60 50 290 9,3m ±20 23 9,5 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS5C673NLTAG NVTFS5C673NLTAG ONSEMI enriquecido unipolar - N-MOSFET 60 50 290 9,8m ±20 23 9,5 WDFN8 SMD bobina, cinta - - - - - - - -
NTTFS5C670NLTAG NTTFS5C670NLTAG ONSEMI enriquecido unipolar - N-MOSFET 60 70 440 6,5m ±20 31 20 WDFN8 SMD bobina, cinta - - - - - - - -
NTTFS5C670NLTWG NTTFS5C670NLTWG ONSEMI enriquecido unipolar - N-MOSFET 60 70 440 6,5m ±20 31 20 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS5C670NLTAG NVTFS5C670NLTAG ONSEMI enriquecido unipolar - N-MOSFET 60 70 440 6,8m ±20 31 20 WDFN8 SMD bobina, cinta - - - - - - - -
NTTFS5D1N06HLTAG NTTFS5D1N06HLTAG ONSEMI enriquecido unipolar - N-MOSFET 60 78 216 5,2m ±20 63 22,5 WDFN8 SMD bobina, cinta - - - - - - - -
NTTFS3D7N06HLTWG NTTFS3D7N06HLTWG ONSEMI enriquecido unipolar - N-MOSFET 60 103 658 3,9m ±20 83 32,7 WDFN8 SMD bobina, cinta - - - - - - - -
NTTFS5C658NLTAG NTTFS5C658NLTAG ONSEMI enriquecido unipolar - N-MOSFET 60 109 440 5m ±20 57 27 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS5C658NLTAG NVTFS5C658NLTAG ONSEMI enriquecido unipolar - N-MOSFET 60 109 440 5m ±20 57 27 WDFN8 SMD bobina, cinta - - - - - - - -
NVLJWS022N06CLTAG NVLJWS022N06CLTAG ONSEMI enriquecido unipolar - N-MOSFET 60 25 90 21m ±20 14 7,6 WDFNW6 SMD bobina, cinta - - - - - - - -
NVLJWS011N06CLTAG NVLJWS011N06CLTAG ONSEMI enriquecido unipolar - N-MOSFET 60 48 233 9m ±20 23 13,6 WDFNW6 SMD bobina, cinta - - - - - - - -
NVLJWD040N06CLTAG NVLJWD040N06CLTAG ONSEMI enriquecido unipolar - N-MOSFET x2 60 18 54 38m ±20 12 6 WDFNW6 SMD bobina, cinta - - - - - - - -
NVTFWS030N06CTAG NVTFWS030N06CTAG ONSEMI enriquecido unipolar - N-MOSFET 60 19 86 29,7m ±20 11 4,7 WDFNW8 SMD bobina, cinta - - - - - - - -
NVTFS5C680NLWFTAG NVTFS5C680NLWFTAG ONSEMI enriquecido unipolar - N-MOSFET 60 20 80 26,5m ±20 10 6 WDFNW8 SMD bobina, cinta - - - - - - - -
NVTFWS020N06CTAG NVTFWS020N06CTAG ONSEMI enriquecido unipolar - N-MOSFET 60 27 128 20,3m ±20 15 5,8 WDFNW8 SMD bobina, cinta - - - - - - - -
NVTFS5C673NLWFTAG NVTFS5C673NLWFTAG ONSEMI enriquecido unipolar - N-MOSFET 60 50 290 9,8m ±20 23 9,5 WDFNW8 SMD bobina, cinta - - - - - - - -
NVTFS5C670NLWFTAG NVTFS5C670NLWFTAG ONSEMI enriquecido unipolar - N-MOSFET 60 70 440 6,8m ±20 31 20 WDFNW8 SMD bobina, cinta - - - - - - - -
NVTFS5C658NLWFTAG NVTFS5C658NLWFTAG ONSEMI enriquecido unipolar - N-MOSFET 60 109 440 5m ±20 57 27 WDFNW8 SMD bobina, cinta - - - - - - - -
NDP6060 NDP6060 ONSEMI enriquecido unipolar - N-MOSFET 60 48 144 25µ ±20 100 39 TO220-3 THT tubo - - - - - - - -
FDP80N06 FDP80N06 ONSEMI enriquecido unipolar DMOS, UniFET N-MOSFET 60 65 320 10m ±20 176 74 TO220-3 THT tubo - - - - - - - -
FDP038AN06A0 FDP038AN06A0 ONSEMI enriquecido unipolar - N-MOSFET 60 80 - 7,8m ±20 310 - TO220-3 THT tubo - - - - - - - -
FDP070AN06A0 FDP070AN06A0 ONSEMI enriquecido unipolar - N-MOSFET 60 80 - 7m ±20 175 51 TO220-3 THT tubo - - - - - - - -
FDP5800 FDP5800 ONSEMI enriquecido unipolar - N-MOSFET 60 80 320 6m ±20 242 112 TO220-3 THT tubo - - - - - - - -
FDP030N06B-F102 FDP030N06B-F102 ONSEMI enriquecido unipolar - N-MOSFET 60 195 780 3,1m ±20 205 76 TO220-3 THT tubo - - - - - - - -
FDP020N06B-F102 FDP020N06B-F102 ONSEMI enriquecido unipolar - N-MOSFET 60 313 1252 2m ±20 333 206 TO220-3 THT tubo - - - - - - - -
FDP050AN06A0 FDP050AN06A0 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 60 18 - 11m ±20 245 80 TO220AB THT tubo - - - - - - - -
HUF76423P3 HUF76423P3 ONSEMI enriquecido unipolar UltraFET® N-MOSFET 60 23 - 35m ±16 85 34 TO220AB THT tubo - - - - - - - -
NDP6060L NDP6060L ONSEMI enriquecido unipolar - N-MOSFET 60 48 - 40m ±16 100 60 TO220AB THT tubo logic level - - - - - - -
RFP50N06 RFP50N06 ONSEMI enriquecido unipolar - N-MOSFET 60 50 - 22m ±20 131 150 TO220AB THT tubo - - - - - - - -
RFP70N06 RFP70N06 ONSEMI enriquecido unipolar - N-MOSFET 60 70 - 14m ±20 150 156 TO220AB THT tubo - - - - - - - -
FQPF13N06L FQPF13N06L ONSEMI enriquecido unipolar - N-MOSFET 60 7,1 40 140m ±20 24 6,4 TO220FP THT tubo - - - - - - - -
FDPF55N06 FDPF55N06 ONSEMI enriquecido unipolar - N-MOSFET 60 34,8 220 220m ±25 48 37 TO220FP THT tubo - - - - - - - -
2N7000BU 2N7000BU ONSEMI enriquecido unipolar DMOS N-MOSFET 60 0,11 1 5 ±30 0,4 - TO92 THT a granel - - - - - - - -
2N7000TA 2N7000TA ONSEMI enriquecido unipolar DMOS N-MOSFET 60 0,11 1 5 ±30 0,4 - TO92 THT Ammo Pack - - - - - - - -
2N7000-D26Z 2N7000-D26Z ONSEMI enriquecido unipolar DMOS N-MOSFET 60 0,2 0,5 9 ±20 0,4 - TO92 THT bobina, cinta - - - - - - - -
2N7000-D74Z 2N7000-D74Z ONSEMI enriquecido unipolar DMOS N-MOSFET 60 0,2 0,5 9 ±20 0,4 - TO92 THT Ammo Pack - - - - - - - -
2N7000-D75Z 2N7000-D75Z ONSEMI enriquecido unipolar DMOS N-MOSFET 60 0,2 0,5 9 ±20 0,4 - TO92 THT bobina, cinta - - - - - - - -
2N7000-ONS 2N7000 ONSEMI enriquecido unipolar DMOS N-MOSFET 60 0,2 0,5 9 ±20 0,4 - TO92 THT a granel - - - - - - - -
BS270 BS270 ONSEMI enriquecido unipolar DMOS N-MOSFET 60 0,4 2 3,5 ±20 0,625 - TO92 THT a granel - - - - - - - -
BS170 BS170 ONSEMI enriquecido unipolar DMOS N-MOSFET 60 0,5 1,2 5 ±20 0,83 - TO92 THT a granel - - - - - - - -
BS170D26Z BS170-D26Z ONSEMI enriquecido unipolar DMOS N-MOSFET 60 0,5 1,2 5 ±20 0,83 - TO92 THT bobina, cinta - - - - - - - -
BS170D27Z BS170-D27Z ONSEMI enriquecido unipolar DMOS N-MOSFET 60 0,5 1,2 5 ±20 0,83 - TO92 THT bobina, cinta - - - - - - - -
BS170-D75Z BS170-D75Z ONSEMI enriquecido unipolar DMOS N-MOSFET 60 0,5 1,2 5 ±20 0,83 - TO92 THT bobina, cinta - - - - - - - -
ECH8690-TL-H ECH8690-TL-H ONSEMI enriquecido unipolar - N/P-MOSFET 60/-60 4,7/-3,5 - 55m/94m ±20 1,5 - ECH8 SMD bobina, cinta - - par complementario - ESD - - -
FDS4559 FDS4559 ONSEMI enriquecido unipolar PowerTrench® N/P-MOSFET 60/-60 4,5/-3,5 - 55m/105m ±20 2 21 SO8 SMD bobina, cinta - - par complementario - - - - -
NDC7001C NDC7001C ONSEMI enriquecido unipolar - N/P-MOSFET 60/-60 0,51/-0,34 - 4/10 ±20 0,96 1,5/2,2 SuperSOT-6 SMD bobina, cinta - - par complementario - - - - -
FDA032N08 FDA032N08 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 70 120 940 3,2m ±20 37,5 220 TO3PN THT tubo - - - - - - - -
FDB16AN08A0 FDB16AN08A0 ONSEMI enriquecido unipolar - N-MOSFET 75 58 - 16m ±20 135 28 D2PAK SMD bobina, cinta - - - - - - - -
FDB060AN08A0 FDB060AN08A0 ONSEMI enriquecido unipolar - N-MOSFET 75 80 - 6m ±20 255 73 D2PAK SMD bobina, cinta - - - - - - - -
FDB045AN08A0 FDB045AN08A0 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 75 90 - 8,4m ±20 310 138 D2PAK SMD bobina, cinta - - - - - - - -
FDD16AN08A0 FDD16AN08A0 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 75 50 - 37m ±20 135 47 DPAK SMD bobina, cinta - - - - - - - -
FDMS037N08B FDMS037N08B ONSEMI enriquecido unipolar - N-MOSFET 75 100 400 3,7m ±20 104,2 100 PQFN8 SMD bobina, cinta - - - - - - - -
FDP16AN08A0 FDP16AN08A0 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 75 44 - 37m ±20 135 42 TO220-3 THT tubo - - - - - - - -
FDP047AN08A0 FDP047AN08A0 ONSEMI enriquecido unipolar - N-MOSFET 75 80 - 11m ±20 310 - TO220-3 THT tubo - - - - - - - -
FDP060AN08A0 FDP060AN08A0 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 75 80 - 13m ±20 255 95 TO220-3 THT tubo - - - - - - - -
FDP047N08 FDP047N08 ONSEMI enriquecido unipolar - N-MOSFET 75 164 656 4,7m ±20 268 117 TO220-3 THT tubo - - - - - - - -
FDP023N08B-F102 FDP023N08B-F102 ONSEMI enriquecido unipolar - N-MOSFET 75 242 968 2,35m ±20 245 150 TO220-3 THT tubo - - - - - - - -
FDH047AN08A0 FDH047AN08A0 ONSEMI enriquecido unipolar - N-MOSFET 75 80 - 11m ±20 310 138 TO247 THT tubo - - - - - - - -
FDH210N08 FDH210N08 ONSEMI enriquecido unipolar - N-MOSFET 75 132 840 5,5m ±20 462 301 TO247 THT tubo - - - - - - - -
FDH038AN08A1 FDH038AN08A1 ONSEMI enriquecido unipolar - N-MOSFET 75 80 - 3,8m ±20 450 125 TO247-3 THT tubo - - - - - - - -
FDB024N08BL7 FDB024N08BL7 ONSEMI enriquecido unipolar - N-MOSFET 80 162 916 2,4m ±20 246 178 D2PAK SMD bobina, cinta - - - - - - - -
FDB0190N807L FDB0190N807L ONSEMI enriquecido unipolar - N-MOSFET 80 190 1440 4,3m ±20 250 249 D2PAK-6 SMD bobina, cinta - - - - - - - -
FDB0250N807L FDB0250N807L ONSEMI enriquecido unipolar - N-MOSFET 80 240 1110 2,2m ±20 214 143 D2PAK-7 SMD bobina, cinta - - - - - - - -
FDB0165N807L FDB0165N807L ONSEMI enriquecido unipolar - N-MOSFET 80 310 1780 1,6m ±20 300 217 D2PAK-7 SMD bobina, cinta - - - - - - - -
NVMFS6H864NT1G NVMFS6H864NT1G ONSEMI enriquecido unipolar - N-MOSFET 80 21 92 32m ±20 16 6,9 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS6H864NLT1G NTMFS6H864NLT1G ONSEMI enriquecido unipolar - N-MOSFET 80 22 97 29m ±20 17 9 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS6H864NLT1G NVMFS6H864NLT1G ONSEMI enriquecido unipolar - N-MOSFET 80 22 97 29m ±20 17 9 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS6H858NT1G NVMFS6H858NT1G ONSEMI enriquecido unipolar - N-MOSFET 80 29 137 20,7m ±20 21 8,9 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS6H858NLT1G NVMFS6H858NLT1G ONSEMI enriquecido unipolar - N-MOSFET 80 30 142 19,5m ±20 21 12 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS6H852NT1G NVMFS6H852NT1G ONSEMI enriquecido unipolar - N-MOSFET 80 40 200 14,2m ±20 27 13 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS6H852NLT1G NTMFS6H852NLT1G ONSEMI enriquecido unipolar - N-MOSFET 80 42 208 13,1m ±20 27 17 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS6H852NLT1G NVMFS6H852NLT1G ONSEMI enriquecido unipolar - N-MOSFET 80 42 208 13,1m ±20 27 17 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS6H848NT1G NVMFS6H848NT1G ONSEMI enriquecido unipolar - N-MOSFET 80 57 308 9,4m ±20 37 16 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS6H848NLT1G NTMFS6H848NLT1G ONSEMI enriquecido unipolar - N-MOSFET 80 59 319 8,8m ±20 37 25 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS6H848NLT1G NVMFS6H848NLT1G ONSEMI enriquecido unipolar - N-MOSFET 80 59 319 8,8m ±20 37 25 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS6H836NT1G NVMFS6H836NT1G ONSEMI enriquecido unipolar - N-MOSFET 80 74 432 6,7m ±20 44 25 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS6H836NLT1G NTMFS6H836NLT1G ONSEMI enriquecido unipolar - N-MOSFET 80 77 449 6,2m ±20 45 34 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS6H836NLT1G NVMFS6H836NLT1G ONSEMI enriquecido unipolar - N-MOSFET 80 77 449 6,2m ±20 45 34 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS6D1N08HT1G NTMFS6D1N08HT1G ONSEMI enriquecido unipolar - N-MOSFET 80 89 468 5,5m ±20 104 32 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS6D1N08HT1G NVMFS6D1N08HT1G ONSEMI enriquecido unipolar - N-MOSFET 80 89 468 5,5m ±20 104 32 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS6H824NT1G NTMFS6H824NT1G ONSEMI enriquecido unipolar - N-MOSFET 80 103 680 4,5m ±20 58 38 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS6H824NT1G NVMFS6H824NT1G ONSEMI enriquecido unipolar - N-MOSFET 80 103 626 4,5m ±20 58 38 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS6H824NLT1G NTMFS6H824NLT1G ONSEMI enriquecido unipolar - N-MOSFET 80 110 722 4m ±20 58 52 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS6H824NLT1G NVMFS6H824NLT1G ONSEMI enriquecido unipolar - N-MOSFET 80 110 722 4m ±20 58 52 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS4D0N08XT1G NTMFS4D0N08XT1G ONSEMI enriquecido unipolar - N-MOSFET 80 119 469 3,5m ±20 107 33 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS6H818NT1G NTMFS6H818NT1G ONSEMI enriquecido unipolar - N-MOSFET 80 123 900 3,7m ±20 68 46 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS3D5N08XT1G NTMFS3D5N08XT1G ONSEMI enriquecido unipolar - N-MOSFET 80 135 543 3m ±20 119 38 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS6H818NLT1G NTMFS6H818NLT1G ONSEMI enriquecido unipolar - N-MOSFET 80 135 772 3,2m ±20 70 64 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS6H818NLT1G NVMFS6H818NLT1G ONSEMI enriquecido unipolar - N-MOSFET 80 135 772 3,2m ±20 140 64 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS3D0N08XT1G NTMFS3D0N08XT1G ONSEMI enriquecido unipolar - N-MOSFET 80 154 634 2,6m ±20 133 45 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS6H801NT1G NTMFS6H801NT1G ONSEMI enriquecido unipolar - N-MOSFET 80 157 900 2,8m ±20 83 64 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS6H801NT1G NVMFS6H801NT1G ONSEMI enriquecido unipolar - N-MOSFET 80 157 900 2,8m ±20 83 64 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS6H801NLT1G NTMFS6H801NLT1G ONSEMI enriquecido unipolar - N-MOSFET 80 160 900 2,7m ±20 83 90 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS6H801NLT1G NVMFS6H801NLT1G ONSEMI enriquecido unipolar - N-MOSFET 80 160 900 2,7m ±20 83 90 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS2D5N08XT1G NTMFS2D5N08XT1G ONSEMI enriquecido unipolar - N-MOSFET 80 181 761 2,1m ±20 148 53 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS2D1N08XT1G NTMFS2D1N08XT1G ONSEMI enriquecido unipolar - N-MOSFET 80 201 866 1,9m ±20 164 39 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS6H800NT1G NTMFS6H800NT1G ONSEMI enriquecido unipolar - N-MOSFET 80 203 900 2,1m ±20 100 85 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS6H800NLT1G NTMFS6H800NLT1G ONSEMI enriquecido unipolar - N-MOSFET 80 224 900 1,9m ±20 107 112 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS6H800NLT1G NVMFS6H800NLT1G ONSEMI enriquecido unipolar - N-MOSFET 80 224 900 1,9m ±20 107 112 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS6H818NT1G NVMFS6H818NT1G ONSEMI enriquecido unipolar - N-MOSFET 80 87 900 3,7m ±20 68 46 DFN5x6 SMD bobina, cinta - - - - - - - -
NTMFSC010N08M7 NTMFSC010N08M7 ONSEMI enriquecido unipolar - N-MOSFET 80 61 180 10m ±20 31,2 29,3 DFN8 SMD bobina, cinta - - - - - - - -
FDMS86300DC FDMS86300DC ONSEMI enriquecido unipolar - N-MOSFET 80 110 - 5m ±20 125 - DFN8 SMD bobina, cinta - - - - - - - -
NTMFSC004N08MC NTMFSC004N08MC ONSEMI enriquecido unipolar - N-MOSFET 80 136 487 4m ±20 127 43,4 DFN8 SMD bobina, cinta - - - - - - - -
NTMFSC2D9N08H NTMFSC2D9N08H ONSEMI enriquecido unipolar - N-MOSFET 80 154 638 2,9m ±20 166 68 DFN8 SMD bobina, cinta - - - - - - - -
NVMFD6H852NLT1G NVMFD6H852NLT1G ONSEMI enriquecido unipolar - N-MOSFET x2 80 25 98 25,5m ±20 19 10 DFN8 SMD bobina, cinta - - - - - - - -
NVMFD6H852NLWFT1G NVMFD6H852NLWFT1G ONSEMI enriquecido unipolar - N-MOSFET x2 80 25 98 25,5m ±20 19 10 DFN8 SMD bobina, cinta - - - - - - - -
NTMFD6H846NLT1G NTMFD6H846NLT1G ONSEMI enriquecido unipolar - N-MOSFET x2 80 31 114 15m ±20 17 17 DFN8 SMD bobina, cinta - - - - - - - -
NVMFD6H846NLT1G NVMFD6H846NLT1G ONSEMI enriquecido unipolar - N-MOSFET x2 80 31 114 15m ±20 17 17 DFN8 SMD bobina, cinta - - - - - - - -
NTMFSC011N08M7 NTMFSC011N08M7 ONSEMI enriquecido unipolar - N-MOSFET x2 80 61 180 10m ±20 31,2 29,3 DFN8 SMD bobina, cinta - - - - - - - -
NVMFD6H840NLT1G NVMFD6H840NLT1G ONSEMI enriquecido unipolar - N-MOSFET x2 80 74 336 6,9m ±20 45 32 DFN8 SMD bobina, cinta - - - - - - - -
NVMFD6H840NLWFT1G NVMFD6H840NLWFT1G ONSEMI enriquecido unipolar - N-MOSFET x2 80 74 336 6,9m ±20 45 32 DFN8 SMD bobina, cinta - - - - - - - -
NVMFS6H864NLWFT1G NVMFS6H864NLWFT1G ONSEMI enriquecido unipolar - N-MOSFET 80 22 97 29m ±20 17 9 DFNW5 SMD bobina, cinta - - - - - - - -
NVMFS6H858NWFT1G NVMFS6H858NWFT1G ONSEMI enriquecido unipolar - N-MOSFET 80 29 137 20,7m ±20 21 8,9 DFNW5 SMD bobina, cinta - - - - - - - -
NVMFS6H852NWFT1G NVMFS6H852NWFT1G ONSEMI enriquecido unipolar - N-MOSFET 80 40 200 14,2m ±20 27 13 DFNW5 SMD bobina, cinta - - - - - - - -
NVMFS6H852NLWFT1G NVMFS6H852NLWFT1G ONSEMI enriquecido unipolar - N-MOSFET 80 42 208 13,1m ±20 27 17 DFNW5 SMD bobina, cinta - - - - - - - -
NVMFS6H848NWFT1G NVMFS6H848NWFT1G ONSEMI enriquecido unipolar - N-MOSFET 80 57 308 9,4m ±20 37 16 DFNW5 SMD bobina, cinta - - - - - - - -
NVMFS6H848NLWFT1G NVMFS6H848NLWFT1G ONSEMI enriquecido unipolar - N-MOSFET 80 59 319 8,8m ±20 37 25 DFNW5 SMD bobina, cinta - - - - - - - -
NVMFS6H836NWFT1G NVMFS6H836NWFT1G ONSEMI enriquecido unipolar - N-MOSFET 80 74 432 6,7m ±20 44 25 DFNW5 SMD bobina, cinta - - - - - - - -
NVMFS6H836NLWFT1G NVMFS6H836NLWFT1G ONSEMI enriquecido unipolar - N-MOSFET 80 77 449 6,2m ±20 45 34 DFNW5 SMD bobina, cinta - - - - - - - -
NVMFSW6D1N08HT1G NVMFSW6D1N08HT1G ONSEMI enriquecido unipolar - N-MOSFET 80 89 468 5,5m ±20 104 32 DFNW5 SMD bobina, cinta - - - - - - - -
NVMFS6H824NWFT1G NVMFS6H824NWFT1G ONSEMI enriquecido unipolar - N-MOSFET 80 103 626 4,5m ±20 58 38 DFNW5 SMD bobina, cinta - - - - - - - -
NVMFS6H824NLWFT1G NVMFS6H824NLWFT1G ONSEMI enriquecido unipolar - N-MOSFET 80 110 722 4m ±20 58 52 DFNW5 SMD bobina, cinta - - - - - - - -
NVMFS6H818NWFT1G NVMFS6H818NWFT1G ONSEMI enriquecido unipolar - N-MOSFET 80 123 900 3,7m ±20 68 46 DFNW5 SMD bobina, cinta - - - - - - - -
NVMFS6H818NLWFT1G NVMFS6H818NLWFT1G ONSEMI enriquecido unipolar - N-MOSFET 80 135 772 3,2m ±20 140 64 DFNW5 SMD bobina, cinta - - - - - - - -
NVMFWS2D5N08XT1G NVMFWS2D5N08XT1G ONSEMI enriquecido unipolar - N-MOSFET 80 156 640 2,55m ±20 133 45 DFNW5 SMD bobina, cinta - - - - - - - -
NVMFS6H801NWFT1G NVMFS6H801NWFT1G ONSEMI enriquecido unipolar - N-MOSFET 80 157 900 2,8m ±20 83 64 DFNW5 SMD bobina, cinta - - - - - - - -
NVMFS6H801NLWFT1G NVMFS6H801NLWFT1G ONSEMI enriquecido unipolar - N-MOSFET 80 160 900 2,7m ±20 83 90 DFNW5 SMD bobina, cinta - - - - - - - -
NVMFWS2D1N08XT1G NVMFWS2D1N08XT1G ONSEMI enriquecido unipolar - N-MOSFET 80 181 761 2,1m ±20 148 53 DFNW5 SMD bobina, cinta - - - - - - - -
NVMFWS1D9N08XT1G NVMFWS1D9N08XT1G ONSEMI enriquecido unipolar - N-MOSFET 80 201 866 1,9m ±20 164 63 DFNW5 SMD bobina, cinta - - - - - - - -
NVMFS6H800NWFT1G NVMFS6H800NWFT1G ONSEMI enriquecido unipolar - N-MOSFET 80 203 900 2,1m ±20 100 85 DFNW5 SMD bobina, cinta - - - - - - - -
NVMFS6H800NLWFT1G NVMFS6H800NLWFT1G ONSEMI enriquecido unipolar - N-MOSFET 80 224 900 1,9m ±20 107 112 DFNW5 SMD bobina, cinta - - - - - - - -
NTMFWS1D5N08XT1G NTMFWS1D5N08XT1G ONSEMI enriquecido unipolar - N-MOSFET 80 253 1071 1,43m ±20 194 121 DFNW5 SMD bobina, cinta - - - - - - - -
NVMFWS1D5N08XT1G NVMFWS1D5N08XT1G ONSEMI enriquecido unipolar - N-MOSFET 80 253 1071 1,43m ±20 194 83 DFNW5 SMD bobina, cinta - - - - - - - -
FDWS86380-F085 FDWS86380-F085 ONSEMI enriquecido unipolar - N-MOSFET 80 50 - 13,4m ±20 75 20 DFNW8 SMD bobina, cinta - - - - - - - -
FDWS86369-F085 FDWS86369-F085 ONSEMI enriquecido unipolar - N-MOSFET 80 65 - 7,5m ±20 107 35 DFNW8 SMD bobina, cinta - - - - - - - -
FDWS86368-F085 FDWS86368-F085 ONSEMI enriquecido unipolar - N-MOSFET 80 80 - 4,5m ±20 214 57 DFNW8 SMD bobina, cinta - - - - - - - -
FDMT80080DC FDMT80080DC ONSEMI enriquecido unipolar - N-MOSFET 80 160 1453 2,22m ±20 156 273 DFNW8 SMD bobina, cinta - - - - - - - -
NTMTS002N08MC NTMTS002N08MC ONSEMI enriquecido unipolar - N-MOSFET 80 229 3577 2m ±20 208 89 DFNW8 SMD bobina, cinta - - - - - - - -
NTMTS1D5N08H NTMTS1D5N08H ONSEMI enriquecido unipolar - N-MOSFET 80 255 900 1,5m ±20 83 125 DFNW8 SMD bobina, cinta - - - - - - - -
NVMTS1D5N08H NVMTS1D5N08H ONSEMI enriquecido unipolar - N-MOSFET 80 273 900 1,4m ±20 129 125 DFNW8 SMD bobina, cinta - - - - - - - -
NTMTSC1D5N08MC NTMTSC1D5N08MC ONSEMI enriquecido unipolar - N-MOSFET 80 287 3500 1,56m ±20 250 101 DFNW8 SMD bobina, cinta - - - - - - - -
NTMTS1D2N08H NTMTS1D2N08H ONSEMI enriquecido unipolar - N-MOSFET 80 335 900 1,1m ±20 150 147 DFNW8 SMD bobina, cinta - - - - - - - -
NVMTS1D2N08H NVMTS1D2N08H ONSEMI enriquecido unipolar - N-MOSFET 80 337 900 1,1m ±20 150 147 DFNW8 SMD bobina, cinta - - - - - - - -
FQD17N08LTM FQD17N08LTM ONSEMI enriquecido unipolar QFET® N-MOSFET 80 8,2 51,6 115m ±20 40 11,5 DPAK SMD bobina, cinta - - - - - - - -
FDD86381-F085 FDD86381-F085 ONSEMI enriquecido unipolar - N-MOSFET 80 25 - 21m ±20 48,4 14 DPAK SMD bobina, cinta - - - - - - - -
FDD86380-F085 FDD86380-F085 ONSEMI enriquecido unipolar - N-MOSFET 80 50 - 13,5m ±20 75 20 DPAK SMD bobina, cinta - - - - - - - -
FDD86369 FDD86369 ONSEMI enriquecido unipolar - N-MOSFET 80 90 - 7,9m ±20 150 36 DPAK SMD bobina, cinta - - - - - - - -
FDD86369-F085 FDD86369-F085 ONSEMI enriquecido unipolar - N-MOSFET 80 90 - 7,9m ±20 150 36 DPAK SMD bobina, cinta - - - - - - - -
FDD86367 FDD86367 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 80 100 - 8,4m ±20 227 88 DPAK SMD bobina, cinta - - - - - - - -
FDD86367-F085 FDD86367-F085 ONSEMI enriquecido unipolar - N-MOSFET 80 100 - 4,2m ±20 227 68 DPAK3 SMD bobina, cinta - - - - - - - -
NTBLS1D7N08H NTBLS1D7N08H ONSEMI enriquecido unipolar - N-MOSFET 80 203 1173 1,7m ±20 83 121 H-PSOF8L SMD bobina, cinta - - - - - - - -
FDBL0330N80 FDBL0330N80 ONSEMI enriquecido unipolar - N-MOSFET 80 220 - 3m ±20 300 86 H-PSOF8L SMD - - - - - - - - -
FDBL86366-F085 FDBL86366-F085 ONSEMI enriquecido unipolar - N-MOSFET 80 220 - 3m ±20 300 86 H-PSOF8L SMD bobina, cinta - - - - - - - -
FDBL0210N80 FDBL0210N80 ONSEMI enriquecido unipolar - N-MOSFET 80 240 - 2m ±20 357 130 H-PSOF8L SMD - - - - - - - - -
FDBL86363-F085 FDBL86363-F085 ONSEMI enriquecido unipolar - N-MOSFET 80 240 - 2m ±20 357 130 H-PSOF8L SMD bobina, cinta - - - - - - - -
NVBLS1D7N08H NVBLS1D7N08H ONSEMI enriquecido unipolar - N-MOSFET 80 241,3 900 1,7m ±20 118,7 121 H-PSOF8L SMD bobina, cinta - - - - - - - -
NTBLS1D5N08MC NTBLS1D5N08MC ONSEMI enriquecido unipolar - N-MOSFET 80 298 4487 1,53m ±20 2,9 111 H-PSOF8L SMD bobina, cinta - - - - - - - -
FDBL0150N80 FDBL0150N80 ONSEMI enriquecido unipolar - N-MOSFET 80 300 - 4,6 ±20 429 172 H-PSOF8L SMD - - - - - - - - -
NTBLS1D1N08H NTBLS1D1N08H ONSEMI enriquecido unipolar - N-MOSFET 80 351 900 1,05m ±20 311 166 H-PSOF8L SMD bobina, cinta - - - - - - - -
NTBLS0D8N08XTXG NTBLS0D8N08XTXG ONSEMI enriquecido unipolar - N-MOSFET 80 457 1629 790µ ±20 325 262 H-PSOF8L SMD bobina, cinta - - - - - - - -
NVMYS020N08LHTWG NVMYS020N08LHTWG ONSEMI enriquecido unipolar - N-MOSFET 80 30 142 19,5m ±20 21 12 LFPAK56 SMD bobina, cinta - - - - - - - -
NVMYS008N08LHTWG NVMYS008N08LHTWG ONSEMI enriquecido unipolar - N-MOSFET 80 59 319 8,8m ±20 37 25 LFPAK56 SMD bobina, cinta - - - - - - - -
NVMYS003N08LHTWG NVMYS003N08LHTWG ONSEMI enriquecido unipolar - N-MOSFET 80 132 900 3,3m ±20 68 64 LFPAK56 SMD bobina, cinta - - - - - - - -
FDMC86320 FDMC86320 ONSEMI enriquecido unipolar - N-MOSFET 80 22 50 18m ±20 40 41 Power33 SMD bobina, cinta - - - - - - - -
FDMC010N08C FDMC010N08C ONSEMI enriquecido unipolar - N-MOSFET 80 32 206 25m ±20 52 22 Power33 SMD bobina, cinta - - - - - - - -
FDMC008N08C FDMC008N08C ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 80 38 273 13,5m ±20 57 29 Power33 SMD bobina, cinta - - - - - - - -
FDMC86340 FDMC86340 ONSEMI enriquecido unipolar - N-MOSFET 80 48 200 11m ±20 54 53 Power33 SMD bobina, cinta - - - - - - - -
FDMS86320 FDMS86320 ONSEMI enriquecido unipolar - N-MOSFET 80 44 160 19m ±20 69 41 Power56 SMD bobina, cinta - - - - - - - -
FDMS86310 FDMS86310 ONSEMI enriquecido unipolar - N-MOSFET 80 50 100 7,2m ±20 96 95 Power56 SMD bobina, cinta - - - - - - - -
FDMS86322 FDMS86322 ONSEMI enriquecido unipolar - N-MOSFET 80 60 200 14m ±20 104 55 Power56 SMD bobina, cinta - - - - - - - -
FDMS4D4N08C FDMS4D4N08C ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 80 78 498 7,2m ±20 125 56 Power56 SMD bobina, cinta - - - - - - - -
FDMS004N08C FDMS004N08C ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 80 80 637 6,5m ±20 125 55 Power56 SMD bobina, cinta - - - - - - - -
FDMS3D5N08LC FDMS3D5N08LC ONSEMI enriquecido unipolar - N-MOSFET 80 86 745 6m ±20 125 82 Power56 SMD bobina, cinta - - - - - - - -
FDMS003N08C FDMS003N08C ONSEMI enriquecido unipolar - N-MOSFET 80 92 658 8,1m ±20 125 73 Power56 SMD bobina, cinta - - - - - - - -
FDMS039N08B FDMS039N08B ONSEMI enriquecido unipolar - N-MOSFET 80 100 400 3,9m ±20 104 100 Power56 SMD bobina, cinta - - - - - - - -
FDMS2D5N08C FDMS2D5N08C ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 80 105 823 4,5m ±20 138 84 Power56 SMD bobina, cinta - - - - - - - -
FDMC86340ET80 FDMC86340ET80 ONSEMI enriquecido unipolar - N-MOSFET 80 48 316 11m ±20 65 49 PowerQFN8 SMD bobina, cinta - - - - - - - -
FDMC86324 FDMC86324 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 80 20 - 40m ±20 41 18 PQFN8 SMD bobina, cinta - - - - - - - -
FDMC007N08LCDC FDMC007N08LCDC ONSEMI enriquecido unipolar - N-MOSFET 80 41 339 12,5m ±20 57 44 PQFN8 SMD bobina, cinta - - - - - - - -
FDMC007N08LC FDMC007N08LC ONSEMI enriquecido unipolar - N-MOSFET 80 42 330 12,2m ±20 57 41 PQFN8 SMD bobina, cinta - - - - - - - -
FDMS007N08LC FDMS007N08LC ONSEMI enriquecido unipolar - N-MOSFET 80 53 345 11,6m ±20 92,6 46 PQFN8 SMD bobina, cinta - - - - - - - -
NTMFS006N08MC NTMFS006N08MC ONSEMI enriquecido unipolar - N-MOSFET 80 82 216 6m ±20 78 30 PQFN8 SMD bobina, cinta - - - - - - - -
FDMT1D3N08B FDMT1D3N08B ONSEMI enriquecido unipolar - N-MOSFET 80 103 864 2,2m ±20 178 260 PQFN8 SMD bobina, cinta - - - - - - - -
FDMS86300 FDMS86300 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 80 122 - 5,8m ±20 104 86 PQFN8 SMD bobina, cinta - - - - - - - -
FDMS86350 FDMS86350 ONSEMI enriquecido unipolar - N-MOSFET 80 130 - 3,8m ±20 156 - PQFN8 SMD bobina, cinta - - - - - - - -
FDMS86350ET80 FDMS86350ET80 ONSEMI enriquecido unipolar - N-MOSFET 80 140 - 3,8m ±20 187 - PQFN8 SMD bobina, cinta - - - - - - - -
NTMFS08N2D5C NTMFS08N2D5C ONSEMI enriquecido unipolar - N-MOSFET 80 166 823 2,7m ±20 138 60 PQFN8 SMD bobina, cinta - - - - - - - -
FDMD8280 FDMD8280 ONSEMI enriquecido unipolar - N-MOSFET x2 80 40 160 12,4m ±20 38 44 PQFN8 SMD bobina, cinta - - - - - - - -
FDS3572 FDS3572 ONSEMI enriquecido unipolar - N-MOSFET 80 5,6 - 32m ±20 2,5 - SO8 SMD bobina, cinta - - - - - - - -
FDS3590 FDS3590 ONSEMI enriquecido unipolar - N-MOSFET 80 6,5 - 86m ±20 2,5 - SO8 SMD bobina, cinta - - - - - - - -
FDS3580 FDS3580 ONSEMI enriquecido unipolar - N-MOSFET 80 7,6 50 29m ±20 2,5 34 SO8 SMD bobina, cinta - - - - - - - -
NVMFS6H800NT1G NVMFS6H800NT1G ONSEMI enriquecido unipolar - N-MOSFET 80 20 - 2,1m ±20 100 - SO8 SMD bobina, cinta - - - - - - - -
FDS3890 FDS3890 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET x2 80 4,7 20 82m ±20 2 35 SO8 SMD bobina, cinta - - - - - - - -
FDC3512 FDC3512 ONSEMI enriquecido unipolar - N-MOSFET 80 3 - 141m ±20 1,6 - SuperSOT-6 SMD bobina, cinta - - - - - - - -
NTMJST2D6N08HTXG NTMJST2D6N08HTXG ONSEMI enriquecido unipolar - N-MOSFET 80 131,5 900 2,8m ±20 58 68 TCPAK10 SMD bobina, cinta - - - - - - - -
NVMJST2D6N08HTXG NVMJST2D6N08HTXG ONSEMI enriquecido unipolar - N-MOSFET 80 131,5 900 2,8m ±20 58 68 TCPAK10 SMD bobina, cinta - - - - - - - -
NVMTSC1D3N08M7TXG NVMTSC1D3N08M7TXG ONSEMI enriquecido unipolar - N-MOSFET 80 348 900 1,25m ±20 144 196 TDFNW8 SMD bobina, cinta - - - - - - - -
NVBLS1D1N08H NVBLS1D1N08H ONSEMI enriquecido unipolar - N-MOSFET 80 351 900 1,05m ±20 156 166 TOLL SMD bobina, cinta - - - - - - - -
NVTFS6H888NTAG NVTFS6H888NTAG ONSEMI enriquecido unipolar - N-MOSFET 80 12 47 55m ±20 9,2 4,7 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS6H888NLTAG NVTFS6H888NLTAG ONSEMI enriquecido unipolar - N-MOSFET 80 14 49 50m ±20 12 6 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS6H888NLWFTAG NVTFS6H888NLWFTAG ONSEMI enriquecido unipolar - N-MOSFET 80 14 49 50m ±20 12 6 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS6H880NTAG NVTFS6H880NTAG ONSEMI enriquecido unipolar - N-MOSFET 80 21 80 32m ±20 16 6,9 WDFN8 SMD bobina, cinta - - - - - - - -
FDMS3572 FDMS3572 ONSEMI enriquecido unipolar - N-MOSFET 80 22 - 29m ±20 78 - WDFN8 SMD bobina, cinta - - - - - - - -
NTTFS6H880NLTAG NTTFS6H880NLTAG ONSEMI enriquecido unipolar - N-MOSFET 80 22 83 29m ±20 17 9 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS6H880NLWFTAG NVTFS6H880NLWFTAG ONSEMI enriquecido unipolar - N-MOSFET 80 22 83 29m ±20 17 9 WDFN8 SMD bobina, cinta - - - - - - - -
NTTFS6H860NLTAG NTTFS6H860NLTAG ONSEMI enriquecido unipolar - N-MOSFET 80 30 122 20m ±20 21 12 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS6H860NLTAG NVTFS6H860NLTAG ONSEMI enriquecido unipolar - N-MOSFET 80 30 122 20m ±20 21 12 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS6H860NLWFTAG NVTFS6H860NLWFTAG ONSEMI enriquecido unipolar - N-MOSFET 80 30 122 20m ±20 21 12 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS6H860NTAG NVTFS6H860NTAG ONSEMI enriquecido unipolar - N-MOSFET 80 30 119 21,1m ±20 23 8,7 WDFN8 SMD bobina, cinta - - - - - - - -
NTTFS6H854NLTAG NTTFS6H854NLTAG ONSEMI enriquecido unipolar - N-MOSFET 80 41 182 13,4m ±20 27 17 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS6H854NLTAG NVTFS6H854NLTAG ONSEMI enriquecido unipolar - N-MOSFET 80 41 182 13,4m ±20 27 17 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS6H854NLWFTAG NVTFS6H854NLWFTAG ONSEMI enriquecido unipolar - N-MOSFET 80 41 182 13,4m ±20 27 17 WDFN8 SMD bobina, cinta - - - - - - - -
NTTFS6H854NTAG NTTFS6H854NTAG ONSEMI enriquecido unipolar - N-MOSFET 80 44 175 14,5m ±20 34 13 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS6H854NTAG NVTFS6H854NTAG ONSEMI enriquecido unipolar - N-MOSFET 80 44 175 14,5m ±20 34 13 WDFN8 SMD bobina, cinta - - - - - - - -
NTTFS8D1N08HTAG NTTFS8D1N08HTAG ONSEMI enriquecido unipolar - N-MOSFET 80 61 216 8,3m ±20 63 23 WDFN8 SMD bobina, cinta - - - - - - - -
NTTFS6H850NLTAG NTTFS6H850NLTAG ONSEMI enriquecido unipolar - N-MOSFET 80 64 308 8,6m ±20 37 26 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS6H850NLTAG NVTFS6H850NLTAG ONSEMI enriquecido unipolar - N-MOSFET 80 64 308 8,6m ±20 37 26 WDFN8 SMD bobina, cinta - - - - - - - -
NTTFS6H850NTAG NTTFS6H850NTAG ONSEMI enriquecido unipolar - N-MOSFET 80 68 300 9,5m ±20 53 19 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS6H850NTAG NVTFS6H850NTAG ONSEMI enriquecido unipolar - N-MOSFET 80 68 300 9,5m ±20 53 19 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS007N08HLTAG NVTFS007N08HLTAG ONSEMI enriquecido unipolar - N-MOSFET 80 71 347 7m ±20 40 32,5 WDFN8 SMD bobina, cinta - - - - - - - -
NTTFS5D9N08HTWG NTTFS5D9N08HTWG ONSEMI enriquecido unipolar - N-MOSFET 80 84 535 5,9m ±20 100 31 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS6H888NWFTAG NVTFS6H888NWFTAG ONSEMI enriquecido unipolar - N-MOSFET 80 12 47 55m ±20 9,2 4,7 WDFNW8 SMD bobina, cinta - - - - - - - -
NVTFS6H880NWFTAG NVTFS6H880NWFTAG ONSEMI enriquecido unipolar - N-MOSFET 80 21 80 32m ±20 16 6,9 WDFNW8 SMD bobina, cinta - - - - - - - -
NVTFS6H854NWFTAG NVTFS6H854NWFTAG ONSEMI enriquecido unipolar - N-MOSFET 80 44 175 14,5m ±20 34 13 WDFNW8 SMD bobina, cinta - - - - - - - -
NVTFS6H850NLWFTAG NVTFS6H850NLWFTAG ONSEMI enriquecido unipolar - N-MOSFET 80 64 308 8,6m ±20 37 26 WDFNW8 SMD bobina, cinta - - - - - - - -
NVTFS6H850NWFTAG NVTFS6H850NWFTAG ONSEMI enriquecido unipolar - N-MOSFET 80 68 300 9,5m ±20 53 19 WDFNW8 SMD bobina, cinta - - - - - - - -
NVTFWS007N08HLTAG NVTFWS007N08HLTAG ONSEMI enriquecido unipolar - N-MOSFET 80 71 347 7m ±20 40 32,5 WDFNW8 SMD bobina, cinta - - - - - - - -
FDP053N08B-F102 FDP053N08B-F102 ONSEMI enriquecido unipolar - N-MOSFET 80 120 480 5,3m ±20 146 65,4 TO220-3 THT tubo - - - - - - - -
FDP039N08B-F102 FDP039N08B-F102 ONSEMI enriquecido unipolar - N-MOSFET 80 171 684 3,9m ±20 214 102 TO220-3 THT tubo - - - - - - - -
FDP032N08B-F102 FDP032N08B-F102 ONSEMI enriquecido unipolar - N-MOSFET 80 211 844 3,3m ±20 263 111 TO220-3 THT tubo - - - - - - - -
FDP027N08B-F102 FDP027N08B-F102 ONSEMI enriquecido unipolar - N-MOSFET 80 223 892 2,7m ±20 246 137 TO220-3 THT tubo - - - - - - - -
HUF75545P3 HUF75545P3 ONSEMI enriquecido unipolar UltraFET® N-MOSFET 80 73 - 10m ±20 270 235 TO220AB THT tubo - - - - - - - -
HUF75542P3 HUF75542P3 ONSEMI enriquecido unipolar - N-MOSFET 80 75 - 14m ±20 230 150 TO220AB THT - - - - - - - - -
FQB33N10LTM FQB33N10LTM ONSEMI enriquecido unipolar QFET® N-MOSFET 100 23 132 55m ±20 127 40 D2PAK SMD bobina, cinta - - - - - - - -
FQB33N10TM FQB33N10TM ONSEMI enriquecido unipolar QFET® N-MOSFET 100 23 - 52m ±25 127 51 D2PAK SMD bobina, cinta - - - - - - - -
FDB86102LZ FDB86102LZ ONSEMI enriquecido unipolar UniFET N-MOSFET 100 30 50 42m ±20 3,1 21 D2PAK SMD bobina, cinta - - - - - - - -
FQB44N10TM FQB44N10TM ONSEMI enriquecido unipolar QFET® N-MOSFET 100 30,8 - 39m ±25 146 - D2PAK SMD bobina, cinta - - - - - - - -
FQB55N10TM FQB55N10TM ONSEMI enriquecido unipolar QFET® N-MOSFET 100 38,9 - 26m ±25 155 98 D2PAK SMD bobina, cinta - - - - - - - -
NTB6413ANT4G NTB6413ANT4G ONSEMI enriquecido unipolar - N-MOSFET 100 42 178 28m ±20 136 51 D2PAK SMD bobina, cinta - - - - - - - -
HUF75639S3ST HUF75639S3ST ONSEMI enriquecido unipolar UltraFET® N-MOSFET 100 56 - 25m ±20 200 130 D2PAK SMD bobina, cinta - - - - - - - -
FDB3652 FDB3652 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 100 61 - 43m ±20 150 53 D2PAK SMD bobina, cinta - - - - - - - -
NTB6410ANT4G NTB6410ANT4G ONSEMI enriquecido unipolar - N-MOSFET 100 76 305 13m ±20 188 120 D2PAK SMD bobina, cinta - - - - - - - -
FDB3632 FDB3632 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 100 80 - 22m ±20 310 110 D2PAK SMD bobina, cinta - - - - - - - -
FDB035N10A FDB035N10A ONSEMI enriquecido unipolar - N-MOSFET 100 120 856 3,5m ±20 333 116 D2PAK SMD bobina, cinta - - - - - - - -
FDB047N10 FDB047N10 ONSEMI enriquecido unipolar - N-MOSFET 100 164 656 4,7m ±20 375 210 D2PAK SMD bobina, cinta - - - - - - - -
FDB86135 FDB86135 ONSEMI enriquecido unipolar - N-MOSFET 100 176 704 3,5m ±20 227 89 D2PAK SMD bobina, cinta - - - - - - - -
NTB004N10G NTB004N10G ONSEMI enriquecido unipolar - N-MOSFET 100 201 3002 4,2m ±20 340 175 D2PAK SMD bobina, cinta - - - - - - - -
FDB3682 FDB3682 ONSEMI enriquecido unipolar - N-MOSFET 100 32 - 36m ±20 95 18,5 D2PAK-3 SMD bobina, cinta - - - - - - - -
NTBS9D0N10MC NTBS9D0N10MC ONSEMI enriquecido unipolar - N-MOSFET 100 60 239 9m ±20 68 23 D2PAK-3 SMD bobina, cinta - - - - - - - -
FDB0260N1007L FDB0260N1007L ONSEMI enriquecido unipolar - N-MOSFET 100 200 1100 2,6m ±20 250 84 D2PAK-7 SMD bobina, cinta - - - - - - - -
NTBGS004N10G NTBGS004N10G ONSEMI enriquecido unipolar - N-MOSFET 100 203 - 4,1m ±20 340 - D2PAK-7 SMD bobina, cinta - - - - - - - -
FDB1D7N10CL7 FDB1D7N10CL7 ONSEMI enriquecido unipolar - N-MOSFET 100 268 1390 1,7m ±20 250 116 D2PAK-7 SMD bobina, cinta - - - - - - - -
NVMFS040N10MCLT1G NVMFS040N10MCLT1G ONSEMI enriquecido unipolar - N-MOSFET 100 21 94 38m ±20 18 8,3 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS027N10MCLT1G NVMFS027N10MCLT1G ONSEMI enriquecido unipolar - N-MOSFET 100 28 137 26m ±20 23 11,5 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS021N10MCLT1G NVMFS021N10MCLT1G ONSEMI enriquecido unipolar - N-MOSFET 100 31 159 23m ±20 24 13 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS016N10MCLT1G NVMFS016N10MCLT1G ONSEMI enriquecido unipolar - N-MOSFET 100 46 243 14m ±20 32 19 DFN5 SMD bobina, cinta - - - - - - - -
NVMFWS016N10MCLT1G NVMFWS016N10MCLT1G ONSEMI enriquecido unipolar - N-MOSFET 100 46 243 14m ±20 32 19 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS015N10MCLT1G NVMFS015N10MCLT1G ONSEMI enriquecido unipolar - N-MOSFET 100 47,1 259 12,2m ±20 23,8 19 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS015N10MCLT1G NTMFS015N10MCLT1G ONSEMI enriquecido unipolar - N-MOSFET 100 54 423 12,2m ±20 79 19 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS005N10MCLT1G NTMFS005N10MCLT1G ONSEMI enriquecido unipolar - N-MOSFET 100 105 470 5,1m ±20 125 55 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS005N10MCLT1G NVMFS005N10MCLT1G ONSEMI enriquecido unipolar - N-MOSFET 100 108 695 5,1m ±20 65 55 DFN5 SMD bobina, cinta - - - - - - - -
NVMFWS005N10MCLT1G NVMFWS005N10MCLT1G ONSEMI enriquecido unipolar - N-MOSFET 100 108 695 5,1m ±20 65 55 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS4D2N10MDT1G NTMFS4D2N10MDT1G ONSEMI enriquecido unipolar - N-MOSFET 100 113 763 4,3m ±20 132 40 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS3D6N10MCLT1G NTMFS3D6N10MCLT1G ONSEMI enriquecido unipolar - N-MOSFET 100 131 1674 3,6m ±20 136 60 DFN5 SMD bobina, cinta - - - - - - - -
NVMFS3D6N10MCLT1G NVMFS3D6N10MCLT1G ONSEMI enriquecido unipolar - N-MOSFET 100 132 888 3,6m ±20 69 60 DFN5 SMD bobina, cinta - - - - - - - -
NVMFWS004N10MCT1G NVMFWS004N10MCT1G ONSEMI enriquecido unipolar - N-MOSFET 100 138 900 3,9m ±20 82 48 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS3D2N10MDT1G NTMFS3D2N10MDT1G ONSEMI enriquecido unipolar - N-MOSFET 100 142 879 3,5m ±20 155 48 DFN5 SMD bobina, cinta - - - - - - - -
NTMFS002N10MCLT1G NTMFS002N10MCLT1G ONSEMI enriquecido unipolar - N-MOSFET 100 175 1536 2,8m ±20 94 97 DFN5 SMD bobina, cinta - - - - - - - -
NVMFWS002N10MCLT1G NVMFWS002N10MCLT1G ONSEMI enriquecido unipolar - N-MOSFET 100 177 900 2,8m ±20 97 97 DFN5 SMD bobina, cinta - - - - - - - -
FDMS86101DC FDMS86101DC ONSEMI enriquecido unipolar - N-MOSFET 100 60 - 13m ±20 125 - DFN8 SMD bobina, cinta - - - - - - - -
NTMFSC4D2N10MC NTMFSC4D2N10MC ONSEMI enriquecido unipolar - N-MOSFET 100 116 900 4,3m ±20 122 42 DFN8 SMD bobina, cinta - - - - - - - -
NVMFWS021N10MCLT1G NVMFWS021N10MCLT1G ONSEMI enriquecido unipolar - N-MOSFET 100 31 159 23m ±20 24 13 DFNW5 SMD bobina, cinta - - - - - - - -
NVMFWS015N10MCLT1G NVMFWS015N10MCLT1G ONSEMI enriquecido unipolar - N-MOSFET 100 47,1 259 12,2m ±20 23,8 19 DFNW5 SMD bobina, cinta - - - - - - - -
NVMFWS3D6N10MCLT1G NVMFWS3D6N10MCLT1G ONSEMI enriquecido unipolar - N-MOSFET 100 132 888 3,6m ±20 69 60 DFNW5 SMD bobina, cinta - - - - - - - -
NVMFWS003N10MCT1G NVMFWS003N10MCT1G ONSEMI enriquecido unipolar - N-MOSFET 100 169 900 3,1m ±20 97 62 DFNW5 SMD bobina, cinta - - - - - - - -
FDWS86068-F085 FDWS86068-F085 ONSEMI enriquecido unipolar - N-MOSFET 100 80 - 6,4m ±20 214 31 DFNW8 SMD bobina, cinta - - - - - - - -
FDMT800100DC FDMT800100DC ONSEMI enriquecido unipolar - N-MOSFET 100 102 989 5,39m ±20 156 111 DFNW8 SMD bobina, cinta - - - - - - - -
NTMTS1D6N10MCTXG NTMTS1D6N10MCTXG ONSEMI enriquecido unipolar - N-MOSFET 100 273 900 1,7m ±20 146 106 DFNW8 SMD bobina, cinta - - - - - - - -
NVMTS1D6N10MCTXG NVMTS1D6N10MCTXG ONSEMI enriquecido unipolar - N-MOSFET 100 273 900 1,7m ±20 146 106 DFNW8 SMD bobina, cinta - - - - - - - -
FDD3860 FDD3860 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 100 6,2 60 64m ±20 83 31 DPAK SMD bobina, cinta - - - - - - - -
FQD13N10LTM FQD13N10LTM ONSEMI enriquecido unipolar QFET® N-MOSFET 100 6,3 - 200m ±20 40 12 DPAK SMD bobina, cinta - - - - - - - -
FQD13N10TM FQD13N10TM ONSEMI enriquecido unipolar QFET® N-MOSFET 100 6,3 - 180m ±25 40 16 DPAK SMD bobina, cinta - - - - - - - -
FDD1600N10ALZ FDD1600N10ALZ ONSEMI enriquecido unipolar - N-MOSFET 100 6,8 13,6 160m ±20 14,9 2,78 DPAK SMD bobina, cinta - - - - - - - -
FQD19N10LTM FQD19N10LTM ONSEMI enriquecido unipolar QFET® N-MOSFET 100 9,8 - 110m ±20 50 18 DPAK SMD bobina, cinta - - - - - - - -
FQD19N10TM FQD19N10TM ONSEMI enriquecido unipolar QFET® N-MOSFET 100 9,8 62,4 100m ±25 50 25 DPAK SMD bobina, cinta - - - - - - - -
NTD6416ANT4G NTD6416ANT4G ONSEMI enriquecido unipolar - N-MOSFET 100 11 - 81m ±20 71 - DPAK SMD bobina, cinta - - - - - - - -
FDD850N10L FDD850N10L ONSEMI enriquecido unipolar - N-MOSFET 100 11,1 - 75m ±20 50 - DPAK SMD bobina, cinta - - - - - - - -
NTD6416ANLT4G NTD6416ANLT4G ONSEMI enriquecido unipolar - N-MOSFET 100 13 - 74m ±20 71 - DPAK SMD bobina, cinta - - - - - - - -
NTD6415ANLT4G NTD6415ANLT4G ONSEMI enriquecido unipolar - N-MOSFET 100 16 80 43m ±20 83 20 DPAK SMD bobina, cinta - - - - - - - -
HUF76629D3ST HUF76629D3ST ONSEMI enriquecido unipolar - N-MOSFET 100 20 - 52m ±16 150 39 DPAK SMD bobina, cinta - - - - - - - -
FDD3690 FDD3690 ONSEMI enriquecido unipolar - N-MOSFET 100 22 75 64m ±20 60 28 DPAK SMD bobina, cinta - - - - - - - -
NTD6414ANT4G NTD6414ANT4G ONSEMI enriquecido unipolar - N-MOSFET 100 22 117 30m ±20 100 40 DPAK SMD bobina, cinta - - - - - - - -
FDD3682 FDD3682 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 100 32 - 90m ±20 95 28 DPAK SMD bobina, cinta - - - - - - - -
FDD3670 FDD3670 ONSEMI enriquecido unipolar - N-MOSFET 100 34 100 32m ±20 83 57 DPAK SMD bobina, cinta - - - - - - - -
FDD86102LZ FDD86102LZ ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 100 35 - 40m ±20 54 26 DPAK SMD bobina, cinta - - - - - - - -
FDD86102 FDD86102 ONSEMI enriquecido unipolar - N-MOSFET 100 36 75 24m ±20 62 13,4 DPAK SMD bobina, cinta - - - - - - - -
FDD3672 FDD3672 ONSEMI enriquecido unipolar UltraFET® N-MOSFET 100 44 - 68m ±20 135 36 DPAK SMD bobina, cinta - - - - - - - -
FDD86110 FDD86110 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 100 50 - 10,2m ±20 127 - DPAK SMD bobina, cinta - - - - - - - -
FDBL86066-F085 FDBL86066-F085 ONSEMI enriquecido unipolar - N-MOSFET 100 185 - 4,1m ±20 300 47 H-PSOF8L SMD bobina, cinta - - - - - - - -
FDBL0260N100 FDBL0260N100 ONSEMI enriquecido unipolar - N-MOSFET 100 200 1000 2,6m ±20 250 83 H-PSOF8L SMD - - - - - - - - -
FDBL0240N100 FDBL0240N100 ONSEMI enriquecido unipolar - N-MOSFET 100 210 910 2,8m ±20 300 79 H-PSOF8L SMD - - - - - - - - -
FDBL86063 FDBL86063 ONSEMI enriquecido unipolar - N-MOSFET 100 240 - 2,6m ±20 357 73 H-PSOF8L SMD bobina, cinta - - - - - - - -
FDBL86063-F085 FDBL86063-F085 ONSEMI enriquecido unipolar - N-MOSFET 100 240 - 2,6m ±20 357 73 H-PSOF8L SMD bobina, cinta - - - - - - - -
NVBLS1D7N10MCTXG NVBLS1D7N10MCTXG ONSEMI enriquecido unipolar - N-MOSFET 100 265 900 1,8m ±20 152 115 H-PSOF8L SMD bobina, cinta - - - - - - - -
NTBLS1D7N10MCTXG NTBLS1D7N10MCTXG ONSEMI enriquecido unipolar - N-MOSFET 100 272 2137 1,8m ±20 147 115 H-PSOF8L SMD bobina, cinta - - - - - - - -
FDBL0200N100 FDBL0200N100 ONSEMI enriquecido unipolar - N-MOSFET 100 300 - 2m ±20 429 95 H-PSOF8L SMD bobina, cinta - - - - - - - -
FDBL86062-F085 FDBL86062-F085 ONSEMI enriquecido unipolar - N-MOSFET 100 300 - 2m ±20 429 95 H-PSOF8L SMD bobina, cinta - - - - - - - -
NVBLS1D5N10MCTXG NVBLS1D5N10MCTXG ONSEMI enriquecido unipolar - N-MOSFET 100 300 900 1,5m ±20 165 131 H-PSOF8L SMD bobina, cinta - - - - - - - -
NTBLS1D5N10MCTXG NTBLS1D5N10MCTXG ONSEMI enriquecido unipolar - N-MOSFET 100 312 2055 1,5m ±20 161 131 H-PSOF8L SMD bobina, cinta - - - - - - - -
NVMYS021N10MCLTWG NVMYS021N10MCLTWG ONSEMI enriquecido unipolar - N-MOSFET 100 31 159 23m ±20 24 13 LFPAK56 SMD bobina, cinta - - - - - - - -
NVMYS016N10MCLTWG NVMYS016N10MCLTWG ONSEMI enriquecido unipolar - N-MOSFET 100 46 264 14m ±20 32 19 LFPAK56 SMD bobina, cinta - - - - - - - -
NVMYS012N10MCLTWG NVMYS012N10MCLTWG ONSEMI enriquecido unipolar - N-MOSFET 100 52 283 12,2m ±20 36 19 LFPAK56 SMD bobina, cinta - - - - - - - -
NVMYS007N10MCLTWG NVMYS007N10MCLTWG ONSEMI enriquecido unipolar - N-MOSFET 100 83 539 7m ±20 54 37 LFPAK56 SMD bobina, cinta - - - - - - - -
NVMYS005N10MCLTWG NVMYS005N10MCLTWG ONSEMI enriquecido unipolar - N-MOSFET 100 108 736 5,1m ±20 65 55 LFPAK56 SMD bobina, cinta - - - - - - - -
FDMA86108LZ FDMA86108LZ ONSEMI enriquecido unipolar - N-MOSFET 100 2,2 6 446m ±20 2,4 3 MicroFET SMD bobina, cinta - - - - - - - -
FDMA86151L FDMA86151L ONSEMI enriquecido unipolar - N-MOSFET 100 3,3 20 150m ±20 2,4 7,3 MicroFET SMD bobina, cinta - - - - - - - -
FDMC86102L FDMC86102L ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 100 - 39m ±20 41 22 MLP8 SMD bobina, cinta - - - - - - - -
FDMC86102 FDMC86102 ONSEMI enriquecido unipolar - N-MOSFET 100 20 60 41m ±20 41 18 Power33 SMD bobina, cinta - - - - - - - -
FDMC86183 FDMC86183 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 100 29 189 21m ±20 52 21 Power33 SMD bobina, cinta - - - - - - - -
FDMC86160ET100 FDMC86160ET100 ONSEMI enriquecido unipolar - N-MOSFET 100 31 204 26m ±20 65 22 Power33 SMD bobina, cinta - - - - - - - -
FDMC86184 FDMC86184 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 100 36 266 18m ±20 54 30 Power33 SMD bobina, cinta - - - - - - - -
FDMC86160 FDMC86160 ONSEMI enriquecido unipolar - N-MOSFET 100 43 50 26m ±20 54 22 Power33 SMD bobina, cinta - - - - - - - -
FDMS3672 FDMS3672 ONSEMI enriquecido unipolar - N-MOSFET 100 22 30 40m ±20 78 44 Power56 SMD bobina, cinta - - - - - - - -
FDMS86105 FDMS86105 ONSEMI enriquecido unipolar - N-MOSFET 100 26 30 57m ±20 48 11 Power56 SMD bobina, cinta - - - - - - - -
FDMS86183 FDMS86183 ONSEMI enriquecido unipolar - N-MOSFET 100 32 187 34,6m ±20 63 21 Power56 SMD bobina, cinta - - - - - - - -
FDMS3662 FDMS3662 ONSEMI enriquecido unipolar - N-MOSFET 100 39 90 24,7m ±20 104 75 Power56 SMD bobina, cinta - - - - - - - -
FDMS86152 FDMS86152 ONSEMI enriquecido unipolar - N-MOSFET 100 45 260 11m ±20 125 50 Power56 SMD bobina, cinta - - - - - - - -
FDMS10C4D2N FDMS10C4D2N ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 100 48 510 9m ±20 125 65 Power56 SMD bobina, cinta - - - - - - - -
FDMS86182 FDMS86182 ONSEMI enriquecido unipolar - N-MOSFET 100 49 364 19,5m ±20 83 37 Power56 SMD bobina, cinta - - - - - - - -
FDMS86103L FDMS86103L ONSEMI enriquecido unipolar - N-MOSFET 100 51 414 14m ±20 104 60 Power56 SMD bobina, cinta - - - - - - - -
FDMS86101A FDMS86101A ONSEMI enriquecido unipolar - N-MOSFET 100 60 180 13,5m ±20 104 58 Power56 SMD bobina, cinta - - - - - - - -
FDMS86150ET100 FDMS86150ET100 ONSEMI enriquecido unipolar - N-MOSFET 100 90 617 9,1m ±20 187 62 Power56 SMD bobina, cinta - - - - - - - -
FDMS86180 FDMS86180 ONSEMI enriquecido unipolar - N-MOSFET 100 151 775 3,2m ±20 138 60 Power56 SMD bobina, cinta - - - - - - - -
NTMTSC1D6N10MCTXG NTMTSC1D6N10MCTXG ONSEMI enriquecido unipolar - N-MOSFET 100 267 900 1,7m ±20 145 106 Power88 SMD bobina, cinta - - - - - - - -
FDMD82100 FDMD82100 ONSEMI enriquecido unipolar - N-MOSFET x2 100 25 80 35m ±20 2,1 17 PQFN12 SMD bobina, cinta - - - - - - - -
FDMS86104 FDMS86104 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 100 16 - 40m ±20 73 16 PQFN8 SMD bobina, cinta - - - - - - - -
FDMS8622 FDMS8622 ONSEMI enriquecido unipolar - N-MOSFET 100 16,5 - 97m ±20 31 - PQFN8 SMD bobina, cinta - - - - - - - -
FDMS86102LZ FDMS86102LZ ONSEMI enriquecido unipolar - N-MOSFET 100 22 - 42m ±20 69 - PQFN8 SMD bobina, cinta - - - - - - - -
FDMS86101 FDMS86101 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 100 60 - 14m ±20 104 55 PQFN8 SMD bobina, cinta - - - - - - - -
FDMS86181 FDMS86181 ONSEMI enriquecido unipolar - N-MOSFET 100 78 - 7,8m ±20 125 - PQFN8 SMD bobina, cinta - - - - - - - -
NTMFS10N7D2C NTMFS10N7D2C ONSEMI enriquecido unipolar - N-MOSFET 100 78 364 7,2m ±20 83 26 PQFN8 SMD bobina, cinta - - - - - - - -
NTMFS010N10GTWG NTMFS010N10GTWG ONSEMI enriquecido unipolar - N-MOSFET 100 83 1247 10,8m ±20 75 58,5 PQFN8 SMD bobina, cinta - - - - - - - -
FDMS86150 FDMS86150 ONSEMI enriquecido unipolar - N-MOSFET 100 90 - 9,1m ±20 187 - PQFN8 SMD bobina, cinta - - - - - - - -
NTMFS7D8N10GTWG NTMFS7D8N10GTWG ONSEMI enriquecido unipolar - N-MOSFET 100 110 1656 7,6m ±20 187 92 PQFN8 SMD bobina, cinta - - - - - - - -
NTMFS10N3D2C NTMFS10N3D2C ONSEMI enriquecido unipolar - N-MOSFET 100 151 775 3,2m ±20 138 60 PQFN8 SMD bobina, cinta - - - - - - - -
FDMD84100 FDMD84100 ONSEMI enriquecido unipolar - N-MOSFET x2 100 21 80 38m ±20 23 16 PQFN8 SMD bobina, cinta - - - - - - - -
FDS3692 FDS3692 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 100 2,8 - 122m ±20 2,5 15 SO8 SMD bobina, cinta - - - - - - - -
FDS86106 FDS86106 ONSEMI enriquecido unipolar - N-MOSFET 100 3,4 15 105m ±20 5 3 SO8 SMD bobina, cinta - - - - - - - -
FDS3672 FDS3672 ONSEMI enriquecido unipolar - N-MOSFET 100 4,8 - 43m ±20 2,5 - SO8 SMD bobina, cinta - - - - - - - -
FDS86141 FDS86141 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 100 7 - 40m ±20 2,5 16,5 SO8 SMD bobina, cinta - - - - - - - -
FDS86140 FDS86140 ONSEMI enriquecido unipolar - N-MOSFET 100 11,2 50 9,8m ±20 5 29 SO8 SMD bobina, cinta - - - - - - - -
FDS89161 FDS89161 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET x2 100 2,7 - 176m ±20 31 4,1 SO8 SMD bobina, cinta - - - - - - - -
FDS89161LZ FDS89161LZ ONSEMI enriquecido unipolar - N-MOSFET x2 100 2,7 - 182m ±20 31 - SO8 SMD bobina, cinta - - - - - - - -
FDS89141 FDS89141 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET x2 100 3,5 - 107m ±20 31 7,1 SO8 SMD bobina, cinta - - - - - - - -
FDS3992 FDS3992 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET x2 100 4,5 - 123m ±20 2,5 15 SO8 SMD bobina, cinta - - - - - - - -
FQT7N10LTF FQT7N10LTF ONSEMI enriquecido unipolar QFET® N-MOSFET 100 1,36 - 380m ±20 2 6 SOT223 SMD bobina, cinta - - - - - - - -
FDT86106LZ FDT86106LZ ONSEMI enriquecido unipolar - N-MOSFET 100 3,2 - 189m ±20 2,2 - SOT223 SMD bobina, cinta - - - - - - - -
FDT86113LZ FDT86113LZ ONSEMI enriquecido unipolar - N-MOSFET 100 3,3 - 189m ±20 2,2 - SOT223 SMD bobina, cinta - - - - - - - -
FDT1600N10ALZ FDT1600N10ALZ ONSEMI enriquecido unipolar - N-MOSFET 100 3,5 - 160m ±20 10,42 - SOT223 SMD bobina, cinta - - - - - - - -
FDT3612 FDT3612 ONSEMI enriquecido unipolar - N-MOSFET 100 3,7 - 245m ±20 3 - SOT223 SMD bobina, cinta - - - - - - - -
FDT86102LZ FDT86102LZ ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 100 6,6 - 46m ±20 2,2 25 SOT223 SMD bobina, cinta - - - - - - - -
BSS123-FAI BSS123 ONSEMI enriquecido unipolar - N-MOSFET 100 0,17 - 12 ±20 0,36 2,5 SOT23 SMD bobina, cinta logic level - - - - - - -
BSS123L BSS123L ONSEMI enriquecido unipolar - N-MOSFET 100 0,17 - 12 ±20 0,36 2,5 SOT23 SMD bobina, cinta logic level - - - - - - -
BSS123LT1G BSS123LT1G ONSEMI enriquecido unipolar - N-MOSFET 100 0,17 - 6 ±20 0,225 - SOT23 SMD bobina, cinta - - - - - - - -
BVSS123LT1G BVSS123LT1G ONSEMI enriquecido unipolar - N-MOSFET 100 0,17 - 6 ±20 0,225 - SOT23 SMD bobina, cinta - - - - - - - -
FDN8601 FDN8601 ONSEMI enriquecido unipolar - N-MOSFET 100 2,7 - 183m ±20 1,5 - SuperSOT-3 SMD bobina, cinta - - - - - - - -
FDC3612 FDC3612 ONSEMI enriquecido unipolar - N-MOSFET 100 2,6 - 240m ±20 1,6 - SuperSOT-6 SMD bobina, cinta - - - - - - - -
FDC8601 FDC8601 ONSEMI enriquecido unipolar - N-MOSFET 100 2,7 - 183m ±20 1,6 - SuperSOT-6 SMD bobina, cinta - - - - - - - -
FDC3601N FDC3601N ONSEMI enriquecido unipolar - N-MOSFET x2 100 1 - 976m ±20 0,96 - SuperSOT-6 SMD bobina, cinta - - - - - - - -
FDC8602 FDC8602 ONSEMI enriquecido unipolar - N-MOSFET x2 100 1,2 5 600m ±20 0,96 2 SuperSOT-6 SMD bobina, cinta - - - - - - - -
NTMTS002N10MCTXG NTMTS002N10MCTXG ONSEMI enriquecido unipolar - N-MOSFET 100 236 900 2,3m ±20 128 89 TDFNW8 SMD bobina, cinta - - - - - - - -
NTMTSC002N10MCTXG NTMTSC002N10MCTXG ONSEMI enriquecido unipolar - N-MOSFET 100 236 900 2m ±20 128 89 TDFNW8 SMD bobina, cinta - - - - - - - -
HUF75631S3ST HUF75631S3ST ONSEMI enriquecido unipolar - N-MOSFET 100 33 - 40m ±20 120 66 TO263AB SMD - - - - - - - - -
HUF76639S3ST HUF76639S3ST ONSEMI enriquecido unipolar - N-MOSFET 100 50 - 26m ±16 180 71 TO263AB SMD - - - - - - - - -
HUFA75645S3S HUFA75645S3S ONSEMI enriquecido unipolar - N-MOSFET 100 75 - 14m ±20 310 198 TO263AB SMD - - - - - - - - -
FDMQ8205A FDMQ8205A ONSEMI enriquecido unipolar - N/P-MOSFET x2 100 3 - 51m/147m - 2,5 - WDFN12 SMD bobina, cinta - - - - - - - -
FDMQ8403 FDMQ8403 ONSEMI enriquecido unipolar - N-MOSFET x4 100 6 12 191m ±20 17 5 WDFN12 SMD bobina, cinta - - - - - - - -
FDM3622 FDM3622 ONSEMI enriquecido unipolar - N-MOSFET 100 4,4 - 120m ±20 2,1 - WDFN8 SMD bobina, cinta - - - - - - - -
FDMC86116LZ FDMC86116LZ ONSEMI enriquecido unipolar - N-MOSFET 100 7,5 15 178m ±20 19 6 WDFN8 SMD bobina, cinta - - - - - - - -
FDMC3612-L701 FDMC3612-L701 ONSEMI enriquecido unipolar - N-MOSFET 100 12 15 212m ±20 35 21 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS070N10MCLTAG NVTFS070N10MCLTAG ONSEMI enriquecido unipolar - N-MOSFET 100 13 47 65m ±20 12 5,5 WDFN8 SMD bobina, cinta - - - - - - - -
FDMC3612 FDMC3612 ONSEMI enriquecido unipolar - N-MOSFET 100 16 - 212m ±20 35 - WDFN8 SMD bobina, cinta - - - - - - - -
FDMC8622 FDMC8622 ONSEMI enriquecido unipolar - N-MOSFET 100 16 30 98m ±20 31 7,3 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS040N10MCLTAG NVTFS040N10MCLTAG ONSEMI enriquecido unipolar - N-MOSFET 100 21 82 38m ±20 18 8,6 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS027N10MCLTAG NVTFS027N10MCLTAG ONSEMI enriquecido unipolar - N-MOSFET 100 28 119 26m ±20 23 11,5 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFWS027N10MCLTAG NVTFWS027N10MCLTAG ONSEMI enriquecido unipolar - N-MOSFET 100 28 119 26m ±20 23 11,5 WDFN8 SMD bobina, cinta - - - - - - - -
FDMS8090 FDMS8090 ONSEMI enriquecido unipolar - N-MOSFET 100 40 - 20m ±20 59 - WDFN8 SMD bobina, cinta - - - - - - - -
NTTFS012N10MDTAG NTTFS012N10MDTAG ONSEMI enriquecido unipolar - N-MOSFET 100 45 217 14,4m ±20 62 13 WDFN8 SMD bobina, cinta - - - - - - - -
NTTFS010N10MCLTAG NTTFS010N10MCLTAG ONSEMI enriquecido unipolar - N-MOSFET 100 50 250 10,6m ±20 52 22 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFS010N10MCLTAG NVTFS010N10MCLTAG ONSEMI enriquecido unipolar - N-MOSFET 100 57,8 232 10,6m ±20 38,9 22 WDFN8 SMD bobina, cinta - - - - - - - -
NVTFWS010N10MCLTAG NVTFWS010N10MCLTAG ONSEMI enriquecido unipolar - N-MOSFET 100 57,8 232 10,6m ±20 38,9 22 WDFNW8 SMD bobina, cinta - - - - - - - -
NTTFD022N10C NTTFD022N10C ONSEMI enriquecido unipolar - N-MOSFET x2 100 24 349 25m ±20 26 9 WQFN12 SMD bobina, cinta - - - - - - - -
FDI150N10 FDI150N10 ONSEMI enriquecido unipolar - N-MOSFET 100 57 228 16m ±20 110 53 I2PAK THT tubo - - - - - - - -
FDI045N10A-F102 FDI045N10A-F102 ONSEMI enriquecido unipolar - N-MOSFET 100 164 656 4,5m ±20 263 54 I2PAK THT tubo - - - - - - - -
FDP3682 FDP3682 ONSEMI enriquecido unipolar - N-MOSFET 100 23 - 90m ±20 95 - TO220-3 THT tubo - - - - - - - -
FDP3652 FDP3652 ONSEMI enriquecido unipolar - N-MOSFET 100 43 - 43m ±20 150 - TO220-3 THT tubo - - - - - - - -
FDP150N10A-F102 FDP150N10A-F102 ONSEMI enriquecido unipolar - N-MOSFET 100 50 200 15m ±20 91 16,2 TO220-3 THT tubo - - - - - - - -
FDP150N10 FDP150N10 ONSEMI enriquecido unipolar - N-MOSFET 100 57 228 15m ±20 110 53 TO220-3 THT tubo - - - - - - - -
NTP6412ANG NTP6412ANG ONSEMI enriquecido unipolar - N-MOSFET 100 58 240 18,2m ±20 167 73 TO220-3 THT - - - - - - - - -
FDP120N10 FDP120N10 ONSEMI enriquecido unipolar - N-MOSFET 100 74 296 12m ±20 170 66 TO220-3 THT tubo - - - - - - - -
FDP8D5N10C FDP8D5N10C ONSEMI enriquecido unipolar - N-MOSFET 100 76 304 8,5m ±20 107 25 TO220-3 THT tubo - - - - - - - -
NTP6410ANG NTP6410ANG ONSEMI enriquecido unipolar - N-MOSFET 100 76 305 13m ±20 188 120 TO220-3 THT - - - - - - - - -
FDP085N10A-F102 FDP085N10A-F102 ONSEMI enriquecido unipolar - N-MOSFET 100 96 384 8,5m ±20 188 31 TO220-3 THT tubo - - - - - - - -
FDP4D5N10C FDP4D5N10C ONSEMI enriquecido unipolar - N-MOSFET 100 128 512 4,5m ±20 150 48 TO220-3 THT tubo - - - - - - - -
FDP2D3N10C FDP2D3N10C ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 100 157 888 2,3m ±20 214 152 TO220-3 THT tubo - - - - - - - -
FDP045N10A-F102 FDP045N10A-F102 ONSEMI enriquecido unipolar - N-MOSFET 100 164 656 4,5m ±20 263 54 TO220-3 THT tubo - - - - - - - -
FDP047N10 FDP047N10 ONSEMI enriquecido unipolar - N-MOSFET 100 164 656 4,7m ±20 375 160 TO220-3 THT tubo - - - - - - - -
FDP036N10A FDP036N10A ONSEMI enriquecido unipolar - N-MOSFET 100 214 856 3,6m ±20 333 89 TO220-3 THT tubo - - - - - - - -
FDP3632 FDP3632 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 100 12 - 22m ±20 310 110 TO220AB THT tubo - - - - - - - -
RFP12N10L RFP12N10L ONSEMI enriquecido unipolar - N-MOSFET 100 12 - 200m ±10 60 - TO220AB THT tubo logic level - - - - - - -
FQP55N10 FQP55N10 ONSEMI enriquecido unipolar - N-MOSFET 100 38,9 220 26m ±25 155 98 TO220AB THT tubo - - - - - - - -
HUF75639P3 HUF75639P3 ONSEMI enriquecido unipolar UltraFET® N-MOSFET 100 56 - 25m ±20 200 130 TO220AB THT tubo - - - - - - - -
HUF75645P3 HUF75645P3 ONSEMI enriquecido unipolar UltraFET® N-MOSFET 100 65 - 14m ±20 310 238 TO220AB THT tubo - - - - - - - -
FDP3651U FDP3651U ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 100 80 - 37m ±20 255 9,8 TO220AB THT tubo - - - - - - - -
FQPF19N10 FQPF19N10 ONSEMI enriquecido unipolar - N-MOSFET 100 9,6 54,4 100m ±25 38 25 TO220FP THT tubo - - - - - - - -
FDPF085N10A FDPF085N10A ONSEMI enriquecido unipolar - N-MOSFET 100 40 200 8,5m ±20 33,3 31 TO220FP THT tubo - - - - - - - -
FDPF045N10A FDPF045N10A ONSEMI enriquecido unipolar - N-MOSFET 100 67 268 8,5m ±20 43 57 TO220FP THT tubo - - - - - - - -
FDPF8D5N10C FDPF8D5N10C ONSEMI enriquecido unipolar - N-MOSFET 100 76 304 8,5m ±20 35 25 TO220FP THT tubo - - - - - - - -
FDPF2D3N10C FDPF2D3N10C ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 100 157 888 2,3m ±20 45 152 TO220FP THT tubo - - - - - - - -
HUF75639G3 HUF75639G3 ONSEMI enriquecido unipolar - N-MOSFET 100 56 - 25m ±20 200 - TO247 THT tubo - - - - - - - -
HUF75652G3 HUF75652G3 ONSEMI enriquecido unipolar UltraFET® N-MOSFET 100 75 - 8m ±20 515 475 TO247 THT tubo - - - - - - - -
FDH3632 FDH3632 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 100 80 - 22m ±20 310 110 TO247 THT tubo - - - - - - - -
HUF75639S3 HUF75639S3 ONSEMI enriquecido unipolar - N-MOSFET 100 56 - 25m ±20 200 110 TO262AA THT - - - - - - - - -
FQA70N10 FQA70N10 ONSEMI enriquecido unipolar QFET® N-MOSFET 100 49,5 - 23m ±25 214 11 TO3PN THT tubo - - - - - - - -
FQA140N10 FQA140N10 ONSEMI enriquecido unipolar - N-MOSFET 100 99 560 10m ±25 375 285 TO3PN THT tubo - - - - - - - -
NTTBC070NP10M5L NTTBC070NP10M5L ONSEMI enriquecido unipolar - N/P-MOSFET 100/-100 9,5/-5 33 70m/186m ±20 14/10 5,6/7,3 - SMD bobina, cinta - - par complementario - - - - -
NTMC083NP10M5L NTMC083NP10M5L ONSEMI enriquecido unipolar - N/P-MOSFET 100/-100 4,5/-3,6 20 83m/131m ±20 1,2 5/5,2 SOIC8 SMD bobina, cinta - - par complementario - - - - -
FDMQ8203 FDMQ8203 ONSEMI enriquecido unipolar - N/P-MOSFET x2 100/-80 6/-6 - 323m/191m ±20 2,5 19/5 WDFN12 SMD bobina, cinta MOSFET H-Bridge drenaje conjunto - - - - - -
FDP3672 FDP3672 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 105 31 - 70m ±20 135 37 TO220-3 THT tubo - - - - - - - -
NTMFS006N12MCT1G NTMFS006N12MCT1G ONSEMI enriquecido unipolar - N-MOSFET 120 93 522 6m ±20 41 42 DFN5 SMD bobina, cinta - - - - - - - -
FDMT800120DC FDMT800120DC ONSEMI enriquecido unipolar - N-MOSFET 120 81 767 7,7m ±20 156 107 DFNW8 SMD bobina, cinta - - - - - - - -
FDMS86201 FDMS86201 ONSEMI enriquecido unipolar - N-MOSFET 120 49 160 21,5m ±20 104 46 Power56 SMD bobina, cinta - - - - - - - -
FDMS86202 FDMS86202 ONSEMI enriquecido unipolar - N-MOSFET 120 64 240 13,2m ±20 156 64 Power56 SMD bobina, cinta - - - - - - - -
FDMS86202ET120 FDMS86202ET120 ONSEMI enriquecido unipolar - N-MOSFET 120 72 538 13,2m ±20 187 64 Power56 SMD bobina, cinta - - - - - - - -
FDMS4D0N12C FDMS4D0N12C ONSEMI enriquecido unipolar - N-MOSFET 120 114 628 8,8m ±20 106 82 PQFN8 SMD bobina, cinta - - - - - - - -
NTMFS008N12MCT1G NTMFS008N12MCT1G ONSEMI enriquecido unipolar - N-MOSFET 120 79 352 8m ±20 40 33 SO8 SMD bobina, cinta - - - - - - - -
NVLJS053N12MCLTAG NVLJS053N12MCLTAG ONSEMI enriquecido unipolar - N-MOSFET 120 4,8 86 53m ±20 2,3 7,8 uDFN6 SMD bobina, cinta - - - - - - - -
FDB2552 FDB2552 ONSEMI enriquecido unipolar - N-MOSFET 150 26 - 36m ±20 150 - D2PAK SMD bobina, cinta - - - - - - - -
FDB390N15A FDB390N15A ONSEMI enriquecido unipolar - N-MOSFET 150 27 108 39m ±20 75 14,3 D2PAK SMD bobina, cinta - - - - - - - -
FDB2572 FDB2572 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 150 29 - 146m ±20 135 34 D2PAK SMD bobina, cinta - - - - - - - -
FDB2532 FDB2532 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 150 56 - 14m ±20 310 82 D2PAK SMD bobina, cinta - - - - - - - -
FDB110N15A FDB110N15A ONSEMI enriquecido unipolar - N-MOSFET 150 65 369 11m ±20 234 61 D2PAK SMD bobina, cinta - - - - - - - -
NTB011N15MC NTB011N15MC ONSEMI enriquecido unipolar - N-MOSFET 150 75,4 323 10,9m ±20 136,4 37 D2PAK SMD bobina, cinta - - - - - - - -
FDB082N15A FDB082N15A ONSEMI enriquecido unipolar - N-MOSFET 150 83 468 8,2m ±20 294 84 D2PAK SMD bobina, cinta - - - - - - - -
NTB7D3N15MC NTB7D3N15MC ONSEMI enriquecido unipolar - N-MOSFET 150 101 488 7,3m ±20 166 53 D2PAK SMD bobina, cinta - - - - - - - -
FDB075N15A FDB075N15A ONSEMI enriquecido unipolar - N-MOSFET 150 130 522 7,5m ±20 333 77 D2PAK SMD bobina, cinta - - - - - - - -
NTB5D0N15MC NTB5D0N15MC ONSEMI enriquecido unipolar - N-MOSFET 150 139 761 5m ±20 214 75 D2PAK-3 SMD bobina, cinta - - - - - - - -
NTBGS6D5N15MC NTBGS6D5N15MC ONSEMI enriquecido unipolar - N-MOSFET 150 121 - 8,7m ±20 238 - D2PAK-7 SMD bobina, cinta - - - - - - - -
FDB0630N1507L FDB0630N1507L ONSEMI enriquecido unipolar - N-MOSFET 150 130 720 6,4m ±20 300 97 D2PAK-7 SMD bobina, cinta - - - - - - - -
NTBGS4D1N15MC NTBGS4D1N15MC ONSEMI enriquecido unipolar - N-MOSFET 150 185 - 4,7m ±20 316 - D2PAK-7 SMD bobina, cinta - - - - - - - -
FDMS2572 FDMS2572 ONSEMI enriquecido unipolar - N-MOSFET 150 27 - 103m ±20 78 - DFN8 SMD bobina, cinta - - - - - - - -
FDMS86200DC FDMS86200DC ONSEMI enriquecido unipolar - N-MOSFET 150 40 - 35m ±20 125 - DFN8 SMD bobina, cinta - - - - - - - -
FDMT800152DC FDMT800152DC ONSEMI enriquecido unipolar - N-MOSFET 150 45 413 19m ±20 113 83 DFNW8 SMD bobina, cinta - - - - - - - -
FDMT800150DC FDMT800150DC ONSEMI enriquecido unipolar - N-MOSFET 150 62 561 13m ±20 156 108 DFNW8 SMD bobina, cinta - - - - - - - -
NVMTS4D3N15MC NVMTS4D3N15MC ONSEMI enriquecido unipolar - N-MOSFET 150 165 900 4,45m ±20 146 79 DFNW8 SMD bobina, cinta - - - - - - - -
NTMTS4D3N15MC NTMTS4D3N15MC ONSEMI enriquecido unipolar - N-MOSFET 150 174 900 4,45m ±20 293 79 DFNW8 SMD bobina, cinta - - - - - - - -
FQD5N15TM FQD5N15TM ONSEMI enriquecido unipolar QFET® N-MOSFET 150 2,72 17,2 800m ±25 - 7 DPAK SMD bobina, cinta - - - - - - - -
FDD2572 FDD2572 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 150 4 - 146m ±20 135 3,4 DPAK SMD bobina, cinta - - - - - - - -
NTDS015N15MCT4G NTDS015N15MCT4G ONSEMI enriquecido unipolar - N-MOSFET 150 11 246 12,6m ±20 3,8 27 DPAK SMD bobina, cinta - - - - - - - -
FDD120AN15A0 FDD120AN15A0 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 150 14 - 282m ±20 65 14,5 DPAK SMD bobina, cinta - - - - - - - -
FDD770N15A FDD770N15A ONSEMI enriquecido unipolar - N-MOSFET 150 18 - 77m ±20 56,8 - DPAK SMD bobina, cinta - - - - - - - -
FDD2582 FDD2582 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 150 21 - 172m ±20 95 25 DPAK SMD bobina, cinta - - - - - - - -
FDD390N15A FDD390N15A ONSEMI enriquecido unipolar - N-MOSFET 150 26 104 40m ±20 63 14,3 DPAK SMD bobina, cinta - - - - - - - -
FDD390N15ALZ FDD390N15ALZ ONSEMI enriquecido unipolar - N-MOSFET 150 26 104 42m ±20 63 17,6 DPAK SMD bobina, cinta - - - - - - - -
FDD86250 FDD86250 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 150 27 164 45m ±20 132 33 DPAK SMD bobina, cinta - - - - - - - -
FDD86252 FDD86252 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 150 27 - 103m ±20 89 - DPAK SMD bobina, cinta - - - - - - - -
NVDS015N15MCT4G NVDS015N15MCT4G ONSEMI enriquecido unipolar - N-MOSFET 150 61,3 382 15m ±20 53,6 27 DPAK SMD tubo - - - - - - - -
FDBL0630N150 FDBL0630N150 ONSEMI enriquecido unipolar - N-MOSFET 150 169 - 17,5m ±20 500 90 H-PSOF8L SMD bobina, cinta - - - - - - - -
FDBL86210-F085 FDBL86210-F085 ONSEMI enriquecido unipolar - N-MOSFET 150 169 - 6,3m ±20 500 70 H-PSOF8L SMD bobina, cinta - - - - - - - -
NTBLS4D0N15MC NTBLS4D0N15MC ONSEMI enriquecido unipolar - N-MOSFET 150 187 2255 4,4m ±20 316 90,4 H-PSOF8L SMD bobina, cinta - - - - - - - -
NVBLS4D0N15MC NVBLS4D0N15MC ONSEMI enriquecido unipolar - N-MOSFET 150 187 900 4,4m ±20 158 90,4 H-PSOF8L SMD bobina, cinta - - - - - - - -
FDMA86251 FDMA86251 ONSEMI enriquecido unipolar - N-MOSFET 150 2,4 12 175m ±20 2,4 4,1 MicroFET SMD bobina, cinta - - - - - - - -
FDMC86248 FDMC86248 ONSEMI enriquecido unipolar - N-MOSFET 150 13 15 183m ±20 36 9 Power33 SMD bobina, cinta - - - - - - - -
FDMC86260ET150 FDMC86260ET150 ONSEMI enriquecido unipolar - N-MOSFET 150 18 116 69m ±20 65 21 Power33 SMD bobina, cinta - - - - - - - -
FDMS86250 FDMS86250 ONSEMI enriquecido unipolar - N-MOSFET 150 30 100 25m ±20 96 25 Power56 SMD bobina, cinta - - - - - - - -
FDMS86255ET150 FDMS86255ET150 ONSEMI enriquecido unipolar - N-MOSFET 150 44 276 25m ±20 136 63 Power56 SMD bobina, cinta - - - - - - - -
FDMS8D8N15C FDMS8D8N15C ONSEMI enriquecido unipolar - N-MOSFET 150 54 340 16,1m ±20 132 50 Power56 SMD bobina, cinta - - - - - - - -
FDMS86252L FDMS86252L ONSEMI enriquecido unipolar - N-MOSFET 150 12 - 110m ±20 50 - PQFN8 SMD bobina, cinta - - - - - - - -
FDMS86252 FDMS86252 ONSEMI enriquecido unipolar - N-MOSFET 150 16 - 96m ±20 69 - PQFN8 SMD bobina, cinta - - - - - - - -
NTMFS034N15MC NTMFS034N15MC ONSEMI enriquecido unipolar - N-MOSFET 150 31 131 31m ±20 62,5 12 PQFN8 SMD bobina, cinta - - - - - - - -
FDMS86200 FDMS86200 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 150 36 - 34m ±20 104 46 PQFN8 SMD bobina, cinta - - - - - - - -
NTMFS022N15MC NTMFS022N15MC ONSEMI enriquecido unipolar - N-MOSFET 150 41,9 183 22m ±20 80,6 17 PQFN8 SMD bobina, cinta - - - - - - - -
NTMFS015N15MC NTMFS015N15MC ONSEMI enriquecido unipolar - N-MOSFET 150 61 302 14m ±20 108,7 27 PQFN8 SMD bobina, cinta - - - - - - - -
FDMS86255 FDMS86255 ONSEMI enriquecido unipolar - N-MOSFET 150 62 271 12,4m ±20 113 45 PQFN8 SMD bobina, cinta - - - - - - - -
NTMFS011N15MC NTMFS011N15MC ONSEMI enriquecido unipolar - N-MOSFET 150 78 259 11,5m ±20 147 30,7 PQFN8 SMD bobina, cinta - - - - - - - -
NTMFSC012N15MC NTMFSC012N15MC ONSEMI enriquecido unipolar - N-MOSFET 150 80 1067 11,4m ±20 58 32,4 PQFN8 SMD bobina, cinta - - - - - - - -
NTMFS7D5N15MC NTMFS7D5N15MC ONSEMI enriquecido unipolar - N-MOSFET 150 95,6 478 7,9m ±20 166,7 46 PQFN8 SMD bobina, cinta - - - - - - - -
FDS2582 FDS2582 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 150 2,6 - 146m ±20 2,5 25 SO8 SMD bobina, cinta - - - - - - - -
FDS2572 FDS2572 ONSEMI enriquecido unipolar UltraFET® N-MOSFET 150 3,1 - 53m ±20 2,5 38 SO8 SMD bobina, cinta - - - - - - - -
FDS86242 FDS86242 ONSEMI enriquecido unipolar - N-MOSFET 150 4,1 - 126m ±20 5 - SO8 SMD bobina, cinta - - - - - - - -
FDS86252 FDS86252 ONSEMI enriquecido unipolar - N-MOSFET 150 4,5 20 55m ±20 5 10,6 SO8 SMD bobina, cinta - - - - - - - -
FDS86240 FDS86240 ONSEMI enriquecido unipolar - N-MOSFET 150 7,5 - 35,3m ±20 5 - SO8 SMD bobina, cinta - - - - - - - -
FDT86246 FDT86246 ONSEMI enriquecido unipolar - N-MOSFET 150 2 8 236m ±20 2,2 2,9 SOT223 SMD bobina, cinta - - - - - - - -
FDT86246L FDT86246L ONSEMI enriquecido unipolar - N-MOSFET 150 2 20 228m ±20 2,2 4,5 SOT223 SMD bobina, cinta - - - - - - - -
FDT86244 FDT86244 ONSEMI enriquecido unipolar - N-MOSFET 150 2,8 12 128m - 2,2 4,9 SOT223 SMD bobina, cinta - - - - - - - -
FDN86246 FDN86246 ONSEMI enriquecido unipolar - N-MOSFET 150 1,6 6 261m ±20 1,5 2,9 SOT23 SMD bobina, cinta - - - - - - - -
FDC86244 FDC86244 ONSEMI enriquecido unipolar - N-MOSFET 150 2,3 10 273m ±20 1,6 6 SuperSOT-6 SMD bobina, cinta - - - - - - - -
NVMTSC4D3N15MC NVMTSC4D3N15MC ONSEMI enriquecido unipolar - N-MOSFET 150 165 900 4,45m ±20 146 79 TDFNW8 SMD bobina, cinta - - - - - - - -
NTMTSC4D3N15MC NTMTSC4D3N15MC ONSEMI enriquecido unipolar - N-MOSFET 150 174 900 4,45m ±20 293 79 TDFNW8 SMD bobina, cinta - - - - - - - -
FDMC86244 FDMC86244 ONSEMI enriquecido unipolar - N-MOSFET 150 9,4 12 254m ±20 26 5,9 WDFN8 SMD bobina, cinta - - - - - - - -
FDMC86240 FDMC86240 ONSEMI enriquecido unipolar - N-MOSFET 150 16 - 97m ±20 40 - WDFN8 SMD bobina, cinta - - - - - - - -
FDMC86260 FDMC86260 ONSEMI enriquecido unipolar - N-MOSFET 150 25 135 34m ±20 54 15 WDFN8 SMD bobina, cinta - - - - - - - -
NTTFS034N15MC NTTFS034N15MC ONSEMI enriquecido unipolar - N-MOSFET 150 27 110 31m ±20 53,6 12 WDFN8 SMD bobina, cinta - - - - - - - -
NTTFS022N15MC NTTFS022N15MC ONSEMI enriquecido unipolar - N-MOSFET 150 37,2 158 22m ±20 71,4 17 WDFN8 SMD bobina, cinta - - - - - - - -
NTP011N15MC NTP011N15MC ONSEMI enriquecido unipolar - N-MOSFET 150 74,3 374 10,9m ±20 136,4 37 TO220-3 THT tubo - - - - - - - -
FDP083N15A-F102 FDP083N15A-F102 ONSEMI enriquecido unipolar - N-MOSFET 150 83 - 8,3m ±20 294 - TO220-3 THT tubo - - - - - - - -
NTP7D3N15MC NTP7D3N15MC ONSEMI enriquecido unipolar - N-MOSFET 150 101 574 7,3m ±20 166 53 TO220-3 THT tubo - - - - - - - -
NTP5D0N15MC NTP5D0N15MC ONSEMI enriquecido unipolar - N-MOSFET 150 139 818 5m ±20 214 75 TO220-3 THT tubo - - - - - - - -
FDP2572 FDP2572 ONSEMI enriquecido unipolar - N-MOSFET 150 20 - 146m ±20 135 34 TO220AB THT tubo - - - - - - - -
FDP42AN15A0 FDP42AN15A0 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 150 24 - 107m ±20 150 39 TO220AB THT tubo - - - - - - - -
FDP2552 FDP2552 ONSEMI enriquecido unipolar - N-MOSFET 150 26 - 97m ±20 150 - TO220AB THT tubo - - - - - - - -
FQP45N15V2 FQP45N15V2 ONSEMI enriquecido unipolar QFET® N-MOSFET 150 31 - 40m ±30 220 94 TO220AB THT tubo - - - - - - - -
FDP2532 FDP2532 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 150 56 - 14m ±20 310 107 TO220AB THT tubo - - - - - - - -
FDP075N15A-F102 FDP075N15A-F102 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 150 92 - 7,5m ±20 333 100 TO220AB THT tubo - - - - - - - -
FDPF390N15A FDPF390N15A ONSEMI enriquecido unipolar - N-MOSFET 150 10 60 40m ±20 22 18,6 TO220FP THT tubo - - - - - - - -
FDPF190N15A FDPF190N15A ONSEMI enriquecido unipolar - N-MOSFET 150 17,4 110 19m ±20 33 39 TO220FP THT tubo - - - - - - - -
FQPF45N15V2 FQPF45N15V2 ONSEMI enriquecido unipolar - N-MOSFET 150 31 180 40m ±30 66 94 TO220FP THT tubo - - - - - - - -
FDH055N15A FDH055N15A ONSEMI enriquecido unipolar - N-MOSFET 150 118 - 5,9m ±20 429 - TO247 THT tubo - - - - - - - -
HUF75852G3 HUF75852G3 ONSEMI enriquecido unipolar - N-MOSFET 150 75 - 16m ±20 500 400 TO247-3 THT - - - - - - - - -
FQA90N15-F109 FQA90N15-F109 ONSEMI enriquecido unipolar - N-MOSFET 150 63,5 360 18m ±25 375 285 TO3PN THT tubo - - - - - - - -
FDMC8097AC FDMC8097AC ONSEMI enriquecido unipolar - N/P-MOSFET 150/-150 2,4/-0,9 - 2171m/306m ±20, ±25 1,9 4/6,2 Power33 SMD bobina, cinta - - - - - - - -
FQB19N20CTM FQB19N20CTM ONSEMI enriquecido unipolar QFET® N-MOSFET 200 12,1 76 170m ±30 139 53 D2PAK SMD bobina, cinta - - - - - - - -
FQB19N20TM FQB19N20TM ONSEMI enriquecido unipolar QFET® N-MOSFET 200 12,3 78 150m ±30 140 40 D2PAK SMD bobina, cinta - - - - - - - -
FQB19N20LTM FQB19N20LTM ONSEMI enriquecido unipolar QFET® N-MOSFET 200 13,3 84 150m ±20 140 35 D2PAK SMD bobina, cinta - - - - - - - -
FQB34N20LTM FQB34N20LTM ONSEMI enriquecido unipolar QFET® N-MOSFET 200 20 - 80m ±20 180 72 D2PAK SMD bobina, cinta - - - - - - - -
FDB52N20TM FDB52N20TM ONSEMI enriquecido unipolar UniFET N-MOSFET 200 52 - 49m ±30 357 63 D2PAK SMD bobina, cinta - - - - - - - -
FDB2614 FDB2614 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 200 62 - 27m ±30 260 99 D2PAK SMD bobina, cinta - - - - - - - -
FQD4N20TM FQD4N20TM ONSEMI enriquecido unipolar - N-MOSFET 200 1,95 12 1,4 ±30 30 6,5 DPAK SMD bobina, cinta - - - - - - - -
FDD7N20TM FDD7N20TM ONSEMI enriquecido unipolar - N-MOSFET 200 3 - 690m ±30 43 - DPAK SMD bobina, cinta - - - - - - - -
FQD7N20LTM FQD7N20LTM ONSEMI enriquecido unipolar - N-MOSFET 200 3,48 22 780m ±20 45 9 DPAK SMD bobina, cinta - - - - - - - -
FDD2670 FDD2670 ONSEMI enriquecido unipolar - N-MOSFET 200 3,6 20 275m ±20 70 43 DPAK SMD bobina, cinta - - - - - - - -
FQD10N20CTM FQD10N20CTM ONSEMI enriquecido unipolar QFET® N-MOSFET 200 5 - 360m ±30 50 26 DPAK SMD bobina, cinta - - - - - - - -
FQD12N20LTM FQD12N20LTM ONSEMI enriquecido unipolar QFET® N-MOSFET 200 5,7 - 320m ±20 55 21 DPAK SMD bobina, cinta - - - - - - - -
FQD12N20LTM-F085 FQD12N20LTM-F085 ONSEMI enriquecido unipolar QFET® N-MOSFET 200 5,7 36 280m ±20 55 21 DPAK SMD bobina, cinta - - - rama automotriz - - - -
FQD12N20TM FQD12N20TM ONSEMI enriquecido unipolar QFET® N-MOSFET 200 5,7 36 280m ±30 55 23 DPAK SMD bobina, cinta - - - - - - - -
FQD18N20V2TM FQD18N20V2TM ONSEMI enriquecido unipolar QFET® N-MOSFET 200 9,75 - 140m ±30 83 26 DPAK SMD bobina, cinta - - - - - - - -
FDD18N20LZ FDD18N20LZ ONSEMI enriquecido unipolar - N-MOSFET 200 16 64 125m ±20 89 30 DPAK3 SMD bobina, cinta - - - - - - - -
FDMS2672 FDMS2672 ONSEMI enriquecido unipolar - N-MOSFET 200 13 96 156m ±20 78 42 Power56 SMD bobina, cinta - - - - - - - -
FDS2670 FDS2670 ONSEMI enriquecido unipolar - N-MOSFET 200 3 20 275m ±20 2,5 43 SO8 SMD bobina, cinta - - - - - - - -
FDS2672 FDS2672 ONSEMI enriquecido unipolar UltraFET® N-MOSFET 200 3,9 - 148m ±20 2,5 46 SO8 SMD bobina, cinta - - - - - - - -
FQT4N20LTF FQT4N20LTF ONSEMI enriquecido unipolar QFET® N-MOSFET 200 0,68 - 1,4 ±20 2,2 5,2 SOT223 SMD bobina, cinta - - - - - - - -
FDC2612 FDC2612 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 200 1,1 - 1,43 ±20 1,6 11 SuperSOT-6 SMD bobina, cinta - - - - - - - -
FDMC2610 FDMC2610 ONSEMI enriquecido unipolar - N-MOSFET 200 9,5 - 397m ±20 42 - WDFN8 SMD bobina, cinta - - - - - - - -
FQU12N20TU FQU12N20TU ONSEMI enriquecido unipolar - N-MOSFET 200 5,7 36 280m ±30 55 23 IPAK THT tubo - - - - - - - -
FDP2614 FDP2614 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 200 39,3 - 27m ±30 260 99 TO220-3 THT tubo - - - - - - - -
FQP4N20L FQP4N20L ONSEMI enriquecido unipolar - N-MOSFET 200 2,4 15,2 1,4 ±20 45 5,2 TO220AB THT tubo - - - - - - - -
FDP52N20 FDP52N20 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 200 33 - 49m ±30 357 63 TO220AB THT tubo - - - - - - - -
FDP61N20 FDP61N20 ONSEMI enriquecido unipolar UniFET N-MOSFET 200 38,5 - 41m ±30 417 75 TO220AB THT tubo - - - - - - - -
FQPF19N20 FQPF19N20 ONSEMI enriquecido unipolar - N-MOSFET 200 7,5 48 150m ±30 50 40 TO220FP THT tubo - - - - - - - -
FQPF19N20C FQPF19N20C ONSEMI enriquecido unipolar QFET® N-MOSFET 200 12,1 - 170m ±30 43 - TO220FP THT tubo - - - - - - - -
FQPF32N20C FQPF32N20C ONSEMI enriquecido unipolar - N-MOSFET 200 17,8 112 82m ±30 50 110 TO220FP THT tubo - - - - - - - -
FDPF18N20FT FDPF18N20FT ONSEMI enriquecido unipolar - N-MOSFET 200 18 72 140m ±30 41 20 TO220FP THT tubo - - - - - - - -
FDPF39N20 FDPF39N20 ONSEMI enriquecido unipolar UniFET N-MOSFET 200 23,4 - 66m ±30 37 49 TO220FP THT tubo - - - - - - - -
FDB44N25TM FDB44N25TM ONSEMI enriquecido unipolar UniFET N-MOSFET 250 26,4 - 69m ±30 307 61 D2PAK SMD bobina, cinta - - - - - - - -
FDB33N25TM FDB33N25TM ONSEMI enriquecido unipolar UniFET N-MOSFET 250 33 - 94m ±30 235 48 D2PAK SMD bobina, cinta - - - - - - - -
FDB2710 FDB2710 ONSEMI enriquecido unipolar - N-MOSFET 250 50 - 36,3m ±30 260 101 D2PAK SMD bobina, cinta - - - - - - - -
FQD4N25TM-WS FQD4N25TM-WS ONSEMI enriquecido unipolar - N-MOSFET 250 1,9 12 1,75 ±30 37 5,6 DPAK SMD bobina, cinta - - - - - - - -
FQD6N25TM FQD6N25TM ONSEMI enriquecido unipolar - N-MOSFET 250 2,6 17,6 1 ±30 45 8,5 DPAK SMD bobina, cinta - - - - - - - -
FDD7N25LZTM FDD7N25LZTM ONSEMI enriquecido unipolar - N-MOSFET 250 3,7 - 550m ±20 56 - DPAK SMD bobina, cinta - - - - - - - -
FQD9N25TM-F080 FQD9N25TM-F080 ONSEMI enriquecido unipolar QFET® N-MOSFET 250 4,7 29,6 420m ±30 55 20 DPAK SMD bobina, cinta - - - - - - - -
FQD16N25CTM FQD16N25CTM ONSEMI enriquecido unipolar QFET® N-MOSFET 250 10,1 - 270m ±30 160 53,5 DPAK SMD bobina, cinta - - - - - - - -
FDMS2734 FDMS2734 ONSEMI enriquecido unipolar - N-MOSFET 250 14 30 258m ±20 78 42 Power56 SMD bobina, cinta - - - - - - - -
FDS2734 FDS2734 ONSEMI enriquecido unipolar UltraFET® N-MOSFET 250 3 - 225m ±20 2,5 45 SO8 SMD bobina, cinta - - - - - - - -
FQT4N25TF FQT4N25TF ONSEMI enriquecido unipolar - N-MOSFET 250 0,66 3,3 1,75 ±30 2,5 5,6 SOT223 SMD bobina, cinta - - - - - - - -
FQU9N25TU FQU9N25TU ONSEMI enriquecido unipolar - N-MOSFET 250 4,7 29,6 420m ±30 55 20 IPAK THT tubo - - - - - - - -
FDP51N25 FDP51N25 ONSEMI enriquecido unipolar - N-MOSFET 250 30 - 60m ±30 320 - TO220-3 THT tubo - - - - - - - -
FDP2710 FDP2710 ONSEMI enriquecido unipolar PowerTrench® N-MOSFET 250 31,3 - 36,3m ±30 260 78 TO220-3 THT tubo - - - - - - - -
FQP16N25 FQP16N25 ONSEMI enriquecido unipolar - N-MOSFET 250 10 64 230m ±30 142 35 TO220AB THT tubo - - - - - - - -
FDP33N25 FDP33N25 ONSEMI enriquecido unipolar - N-MOSFET 250 20,4 132 94m ±30 235 48 TO220AB THT tubo - - - - - - - -
FQPF27N25 FQPF27N25 ONSEMI enriquecido unipolar - N-MOSFET 250 8,9 56 110m ±30 55 65 TO220FP THT tubo - - - - - - - -
FQPF16N25C FQPF16N25C ONSEMI enriquecido unipolar - N-MOSFET 250 9,8 62,4 270m ±30 43 53,5 TO220FP THT tubo - - - - - - - -
FDPF2710T FDPF2710T ONSEMI enriquecido unipolar - N-MOSFET 250 25 100 42,5m ±30 62,5 78 TO220FP THT tubo - - - - - - - -
FDPF44N25T FDPF44N25T ONSEMI enriquecido unipolar UniFET N-MOSFET 250 26,4 - 69m ±30 38 61 TO220FP THT tubo - - - - - - - -
FDPF51N25 FDPF51N25 ONSEMI enriquecido unipolar UltraFET® N-MOSFET 250 30 - 48m ±30 38 70 TO220FP THT tubo - - - - - - - -
FDPF33N25T FDPF33N25T ONSEMI enriquecido unipolar - N-MOSFET 250 33 132 94m ±30 37 36,8 TO220FP THT tubo - - - - - - - -
FQA40N25 FQA40N25 ONSEMI enriquecido unipolar - N-MOSFET 250 25 160 70m ±30 280 110 TO3PN THT tubo - - - - - - - -
FDA59N25 FDA59N25 ONSEMI enriquecido unipolar - N-MOSFET 250 35 236 49m ±30 392 82 TO3PN THT tubo - - - - - - - -
FDA69N25 FDA69N25 ONSEMI enriquecido unipolar - N-MOSFET 250 44,2 276 41m ±30 480 100 TO3PN THT tubo - - - - - - - -
FDB28N30TM FDB28N30TM ONSEMI enriquecido unipolar UniFET N-MOSFET 300 28 - 129m ±30 250 50 D2PAK SMD bobina, cinta - - - - - - - -
FDB38N30U FDB38N30U ONSEMI enriquecido unipolar - N-MOSFET 300 38 152 120m ±30 313 56 D2PAK SMD bobina, cinta - - - - - - - -
FQD7N30TM FQD7N30TM ONSEMI enriquecido unipolar - N-MOSFET 300 3,48 22 700m ±30 50 17 DPAK SMD bobina, cinta - - - - - - - -
FQP9N30 FQP9N30 ONSEMI enriquecido unipolar - N-MOSFET 300 5,7 36 450m ±30 98 22 TO220AB THT tubo - - - - - - - -
FQP14N30 FQP14N30 ONSEMI enriquecido unipolar - N-MOSFET 300 9,1 57,6 290m ±30 147 40 TO220AB THT tubo - - - - - - - -
FQPF22N30 FQPF22N30 ONSEMI enriquecido unipolar - N-MOSFET 300 7,6 48 160m ±30 56 60 TO220FP THT tubo - - - - - - - -
FDPF14N30 FDPF14N30 ONSEMI enriquecido unipolar - N-MOSFET 300 8,4 56 290m ±30 35 25 TO220FP THT tubo - - - - - - - -
FDA38N30 FDA38N30 ONSEMI enriquecido unipolar DMOS, UniFET N-MOSFET 300 22 150 85m ±30 312 60 TO3PN THT tubo - - - - - - - -
FDA59N30 FDA59N30 ONSEMI enriquecido unipolar - N-MOSFET 300 35 236 56m ±30 500 100 TO3PN THT tubo - - - - - - - -
FDD3N40TM FDD3N40TM ONSEMI enriquecido unipolar - N-MOSFET 400 1,25 - 3,4 ±20 30 - DPAK SMD bobina, cinta - - - - - - - -
FQD6N40CTM FQD6N40CTM ONSEMI enriquecido unipolar QFET® N-MOSFET 400 2,7 - 1 ±30 48 20 DPAK SMD bobina, cinta - - - - - - - -
FDT3N40TF FDT3N40TF ONSEMI enriquecido unipolar - N-MOSFET 400 1,2 - 3,4 ±30 2 - SOT223 SMD bobina, cinta - - - - - - - -
FDU3N40TU FDU3N40TU ONSEMI enriquecido unipolar - N-MOSFET 400 1,25 8 3,4 ±30 30 6 IPAK THT tubo - - - - - - - -
FQU5N40TU FQU5N40TU ONSEMI enriquecido unipolar - N-MOSFET 400 2,15 13,6 1,6 ±30 45 13 IPAK THT tubo - - - - - - - -
FQP2N40-F080 FQP2N40-F080 ONSEMI enriquecido unipolar - N-MOSFET 400 1,14 7,2 5,8 ±30 40 5,5 TO220AB THT tubo - - - - - - - -
FQP6N40C FQP6N40C ONSEMI enriquecido unipolar - N-MOSFET 400 3,6 24 1 ±30 73 20 TO220AB THT tubo - - - - - - - -
FQP6N40CF FQP6N40CF ONSEMI enriquecido unipolar - N-MOSFET 400 3,6 24 1,1 ±30 73 20 TO220AB THT tubo - - - - - - - -
FQP11N40C FQP11N40C ONSEMI enriquecido unipolar QFET® N-MOSFET 400 6,6 - 530m ±30 135 35 TO220AB THT tubo - - - - - - - -
FQPF5N40 FQPF5N40 ONSEMI enriquecido unipolar - N-MOSFET 400 1,9 12 1,6 ±30 35 13 TO220FP THT tubo - - - - - - - -
FQPF11N40C FQPF11N40C ONSEMI enriquecido unipolar - N-MOSFET 400 6,6 42 530m ±30 44 35 TO220FP THT tubo - - - - - - - -
FDA24N40F FDA24N40F ONSEMI enriquecido unipolar - N-MOSFET 400 13,8 92 190m ±30 235 60 TO3PN THT tubo - - - - - - - -
FDB12N50FTM-WS FDB12N50FTM-WS ONSEMI enriquecido unipolar UniFET N-MOSFET 500 6,9 46 700m ±30 165 30 D2PAK SMD bobina, cinta - - - - - - - -
FDB12N50TM FDB12N50TM ONSEMI enriquecido unipolar DMOS, UniFET N-MOSFET 500 6,9 46 650m ±30 165 30 D2PAK SMD bobina, cinta - - - - - - - -
FDB15N50 FDB15N50 ONSEMI enriquecido unipolar UniFET N-MOSFET 500 11 - 330m ±30 300 - D2PAK SMD bobina, cinta - - - - - - - -
FDB20N50F FDB20N50F ONSEMI enriquecido unipolar UniFET N-MOSFET 500 12,9 - 260m ±30 250 - D2PAK SMD bobina, cinta - - - - - - - -
FQD6N50CTM FQD6N50CTM ONSEMI enriquecido unipolar - N-MOSFET 500 2,7 18 1,2 ±30 61 25 DPAK SMD bobina, cinta - - - - - - - -
FDD5N50NZTM FDD5N50NZTM ONSEMI enriquecido unipolar - N-MOSFET 500 4 16 1,5 ±25 62 9 DPAK SMD bobina, cinta - - - - - - - -
FDT4N50NZU FDT4N50NZU ONSEMI enriquecido unipolar - N-MOSFET 500 2 6 3 ±25 2 9,1 SOT223 SMD bobina, cinta - - - - - - - -
FQU3N50CTU FQU3N50CTU ONSEMI enriquecido unipolar - N-MOSFET 500 1,5 10 2,5 ±30 35 13 IPAK THT tubo - - - - - - - -
FQU4N50TU-WS FQU4N50TU-WS ONSEMI enriquecido unipolar - N-MOSFET 500 1,64 10,4 2,7 ±30 45 13 IPAK THT tubo - - - - - - - -
FQU5N50CTU-WS FQU5N50CTU-WS ONSEMI enriquecido unipolar - N-MOSFET 500 2,4 16 1,4 ±30 48 24 IPAK THT tubo - - - - - - - -
FDP8N50NZ FDP8N50NZ ONSEMI enriquecido unipolar - N-MOSFET 500 4,8 - 850m ±25 130 - TO220-3 THT tubo - - - - - - - -
FDP20N50F FDP20N50F ONSEMI enriquecido unipolar DMOS, UniFET N-MOSFET 500 12,9 80 260m ±30 250 65 TO220-3 THT tubo - - - - - - - -
FQP3N50C-F080 FQP3N50C-F080 ONSEMI enriquecido unipolar - N-MOSFET 500 1,8 12 2,5 ±30 62 13 TO220AB THT tubo - - - - - - - -
FDP18N50 FDP18N50 ONSEMI enriquecido unipolar UniFET N-MOSFET 500 10,8 - 265m ±30 235 60 TO220AB THT tubo - - - - - - - -
FDP22N50N FDP22N50N ONSEMI enriquecido unipolar UniFET N-MOSFET 500 13,2 - 220m ±30 312,5 65 TO220AB THT tubo - - - - - - - -
FQPF5N50CYDTU FQPF5N50CYDTU ONSEMI enriquecido unipolar - N-MOSFET 500 2,9 20 1,4 ±30 38 24 TO220FP THT tubo - - - - - - - -
FDPF12N50T FDPF12N50T ONSEMI enriquecido unipolar UniFET N-MOSFET 500 6,9 - 650m ±30 42 30 TO220FP THT tubo - - - - - - - -
FQPF13N50CF FQPF13N50CF ONSEMI enriquecido unipolar - N-MOSFET 500 8 52 540m ±30 48 56 TO220FP THT tubo - - - - - - - -
FDPF18N50 FDPF18N50 ONSEMI enriquecido unipolar UniFET N-MOSFET 500 10,8 - 265m ±30 38,5 60 TO220FP THT tubo - - - - - - - -
FDPF18N50T FDPF18N50T ONSEMI enriquecido unipolar UniFET N-MOSFET 500 10,8 - 265m ±30 38,5 - TO220FP THT tubo - - - - - - - -
FDPF20N50FT FDPF20N50FT ONSEMI enriquecido unipolar UniFET N-MOSFET 500 12,9 - 260m ±30 38,5 65 TO220FP THT tubo - - - - - - - -
FDPF20N50T FDPF20N50T ONSEMI enriquecido unipolar DMOS, UniFET N-MOSFET 500 12,9 80 230m ±30 38,5 59,5 TO220FP THT tubo - - - - - - - -
FDH44N50 FDH44N50 ONSEMI enriquecido unipolar UniFET N-MOSFET 500 44 - 120m ±30 750 108 TO247 THT tubo - - - - - - - -
FDH45N50F-F133 FDH45N50F-F133 ONSEMI enriquecido unipolar - N-MOSFET 500 45 180 120m ±30 625 105 TO247-3 THT tubo - - - - - - - -
FDL100N50F FDL100N50F ONSEMI enriquecido unipolar UniFET N-MOSFET 500 100 - 55m ±30 2500 238 TO264 THT tubo - - - - - - - -
FDA16N50LDTU FDA16N50LDTU ONSEMI enriquecido unipolar DMOS, UniFET N-MOSFET 500 3,3 66 380m ±30 205 45 TO3PN THT tubo - - - - - - - -
FQA13N50C-F109 FQA13N50C-F109 ONSEMI enriquecido unipolar - N-MOSFET 500 8,5 54 480m ±30 218 56 TO3PN THT tubo - - - - - - - -
FDA16N50-F109 FDA16N50-F109 ONSEMI enriquecido unipolar UniFET N-MOSFET 500 9,9 66 380m ±30 205 45 TO3PN THT tubo - - - - - - - -
FDA24N50F FDA24N50F ONSEMI enriquecido unipolar - N-MOSFET 500 14 96 200m ±30 270 85 TO3PN THT tubo - - - - - - - -
FDA28N50 FDA28N50 ONSEMI enriquecido unipolar DMOS, UniFET N-MOSFET 500 17 112 155m ±30 310 105 TO3PN THT tubo - - - - - - - -
FQNL2N50BTA FQNL2N50BTA ONSEMI enriquecido unipolar QFET® N-MOSFET 500 0,22 1,4 5,3 ±30 1,5 8 TO92L THT Ammo Pack - - - - - - - -
FQB8N60CTM FQB8N60CTM ONSEMI enriquecido unipolar QFET® N-MOSFET 600 4,6 30 1,2 ±30 147 36 D2PAK SMD bobina, cinta - - - - - - - -
FCB11N60TM FCB11N60TM ONSEMI enriquecido unipolar SuperFET® N-MOSFET 600 7 33 380m ±30 125 52 D2PAK SMD bobina, cinta - - - - - - - -
FCB20N60FTM FCB20N60FTM ONSEMI enriquecido unipolar SuperFET® N-MOSFET 600 12,5 - 190m ±30 208 - D2PAK SMD bobina, cinta - - - - - - - -
FCB20N60TM FCB20N60TM ONSEMI enriquecido unipolar SuperFET® N-MOSFET 600 12,5 - 190m ±30 208 98 D2PAK SMD bobina, cinta - - - - - - - -
FQD1N60CTM FQD1N60CTM ONSEMI enriquecido unipolar - N-MOSFET 600 0,6 - 11,5 ±30 28 - DPAK SMD bobina, cinta - - - - - - - -
FQD2N60CTM-WS FQD2N60CTM-WS ONSEMI enriquecido unipolar - N-MOSFET 600 1,14 7,6 4,7 ±30 44 12 DPAK SMD bobina, cinta - - - - - - - -
FQD5N60CTM FQD5N60CTM ONSEMI enriquecido unipolar - N-MOSFET 600 1,8 - 2,5 ±30 49 - DPAK SMD bobina, cinta - - - - - - - -
FDD5N60NZTM FDD5N60NZTM ONSEMI enriquecido unipolar - N-MOSFET 600 2,4 - 2 ±25 83 - DPAK SMD bobina, cinta - - - - - - - -
FCD4N60TM FCD4N60TM ONSEMI enriquecido unipolar - N-MOSFET 600 2,5 - 1,2 ±30 50 - DPAK SMD bobina, cinta - - - - - - - -
FCD5N60TM FCD5N60TM ONSEMI enriquecido unipolar SuperFET® N-MOSFET 600 2,9 - 950m ±30 54 16 DPAK SMD bobina, cinta - - - - - - - -
FCD900N60Z FCD900N60Z ONSEMI enriquecido unipolar - N-MOSFET 600 3,5 13,5 900m ±20 52 17 DPAK SMD bobina, cinta - - - - - - - -
FCD7N60TM FCD7N60TM ONSEMI enriquecido unipolar - N-MOSFET 600 4,4 - 600m ±30 83 - DPAK SMD bobina, cinta - - - - - - - -
FCD5N60TM-WS FCD5N60TM-WS ONSEMI enriquecido unipolar - N-MOSFET 600 4,6 13,8 950m ±30 54 16 DPAK SMD bobina, cinta - - - - - - - -
FCD380N60E FCD380N60E ONSEMI enriquecido unipolar - N-MOSFET 600 6,4 - 380m ±20 106 - DPAK SMD bobina, cinta - - - - - - - -
FCD7N60TM-WS FCD7N60TM-WS ONSEMI enriquecido unipolar - N-MOSFET 600 7 21 600m ±30 83 23 DPAK SMD bobina, cinta - - - - - - - -
FCD620N60ZF FCD620N60ZF ONSEMI enriquecido unipolar - N-MOSFET 600 7,3 21,9 620m ±20 89 20 DPAK SMD bobina, cinta - - - - - - - -
FCD600N60Z FCD600N60Z ONSEMI enriquecido unipolar - N-MOSFET 600 7,4 22,2 600m ±20 89 20 DPAK SMD bobina, cinta - - - - - - - -
NTD280N60S5Z NTD280N60S5Z ONSEMI enriquecido unipolar - N-MOSFET 600 13 39 280m ±20 89 17,9 DPAK SMD bobina, cinta - - - - - - - -
FCMT299N60 FCMT299N60 ONSEMI enriquecido unipolar - N-MOSFET 600 7,9 36 299m ±20 125 51 Power88 SMD bobina, cinta - - - - - - - -
FCMT199N60 FCMT199N60 ONSEMI enriquecido unipolar - N-MOSFET 600 20,2 60,6 199m ±20 208 57 Power88 SMD - - - - - - - - -
NTMT185N60S5H NTMT185N60S5H ONSEMI enriquecido unipolar - N-MOSFET 600 15 53 185m ±30 116 25 TDFN4 SMD bobina, cinta - - - - - - - -
NTMT061N60S5F NTMT061N60S5F ONSEMI enriquecido unipolar - N-MOSFET 600 41 146 61m ±30 255 76 TDFN4 SMD bobina, cinta - - - - - - - -
FCI7N60 FCI7N60 ONSEMI enriquecido unipolar - N-MOSFET 600 7 21 600m ±30 83 23 I2PAK THT tubo - - - - - - - -
FQU1N60CTU FQU1N60CTU ONSEMI enriquecido unipolar - N-MOSFET 600 0,6 4 11,5 ±30 28 6,2 IPAK THT tubo - - - - - - - -
FQU5N60CTU FQU5N60CTU ONSEMI enriquecido unipolar - N-MOSFET 600 1,8 11,2 2,5 ±30 49 19 IPAK THT tubo - - - - - - - -
FCP7N60 FCP7N60 ONSEMI enriquecido unipolar - N-MOSFET 600 7 21 600m ±30 83 23 TO220-3 THT tubo - - - - - - - -
FCP600N60Z FCP600N60Z ONSEMI enriquecido unipolar - N-MOSFET 600 7,4 22,2 600m ±20 89 20 TO220-3 THT tubo - - - - - - - -
FCP380N60 FCP380N60 ONSEMI enriquecido unipolar - N-MOSFET 600 10,2 30,6 380m ±20 106 30 TO220-3 THT tubo - - - - - - - -
FCP380N60E FCP380N60E ONSEMI enriquecido unipolar - N-MOSFET 600 10,2 30,6 380m ±20 106 34 TO220-3 THT tubo - - - - - - - -
FCP11N60F FCP11N60F ONSEMI enriquecido unipolar - N-MOSFET 600 11 33 380m ±30 125 40 TO220-3 THT tubo - - - - - - - -
FCP260N60E FCP260N60E ONSEMI enriquecido unipolar - N-MOSFET 600 15 45 260m ±20 156 48 TO220-3 THT tubo - - - - - - - -
FCP190N60E FCP190N60E ONSEMI enriquecido unipolar - N-MOSFET 600 20,6 61,8 190m ±20 208 63 TO220-3 THT tubo - - - - - - - -
FCP170N60 FCP170N60 ONSEMI enriquecido unipolar - N-MOSFET 600 22 66 170m ±20 227 42 TO220-3 THT tubo - - - - - - - -
NTP125N60S5H NTP125N60S5H ONSEMI enriquecido unipolar - N-MOSFET 600 22 77 125m ±30 152 37,3 TO220-3 THT tubo - - - - - - - -
FCP165N60E FCP165N60E ONSEMI enriquecido unipolar - N-MOSFET 600 23 69 165m ±20 227 57 TO220-3 THT tubo - - - - - - - -
FCP104N60F FCP104N60F ONSEMI enriquecido unipolar - N-MOSFET 600 24 - 104m ±20 357 - TO220-3 THT tubo - - - - - - - -
FCP130N60 FCP130N60 ONSEMI enriquecido unipolar - N-MOSFET 600 28 84 130m ±20 278 54 TO220-3 THT tubo - - - - - - - -
FCP125N60E FCP125N60E ONSEMI enriquecido unipolar - N-MOSFET 600 29 87 125m ±20 278 75 TO220-3 THT tubo - - - - - - - -
FCP099N60E FCP099N60E ONSEMI enriquecido unipolar - N-MOSFET 600 37 111 99m ±20 357 88 TO220-3 THT tubo - - - - - - - -
FQP3N60C FQP3N60C ONSEMI enriquecido unipolar - N-MOSFET 600 1,8 12 3,4 ±30 75 14 TO220AB THT tubo - - - - - - - -
FCP16N60 FCP16N60 ONSEMI enriquecido unipolar - N-MOSFET 600 10,1 48 260m ±30 167 70 TO220AB THT tubo - - - - - - - -
FCP20N60 FCP20N60 ONSEMI enriquecido unipolar SuperFET® N-MOSFET 600 20 - 190m ±30 208 98 TO220AB THT tubo - - - - - - - -
FCP22N60N FCP22N60N ONSEMI enriquecido unipolar SuperMOS® N-MOSFET 600 22 - 165m ±45 205 45 TO220AB THT tubo - - - - - - - -
FCP104N60 FCP104N60 ONSEMI enriquecido unipolar - N-MOSFET 600 24 111 104m ±20 357 82 TO220AB THT tubo - - - - - - - -
FCPF11N60F FCPF11N60F ONSEMI enriquecido unipolar SJ-MOSFET N-MOSFET 600 7 33 380m ±30 36 52 TO220FP THT tubo - - - - - - - -
FDPF12N60NZ FDPF12N60NZ ONSEMI enriquecido unipolar UniFET N-MOSFET 600 7,2 - 650m ±30 240 - TO220FP THT tubo - - - - - - - -
FCPF600N60ZL1-F154 FCPF600N60ZL1-F154 ONSEMI enriquecido unipolar - N-MOSFET 600 7,4 22,2 600m ±20 28 20 TO220FP THT tubo - - - - - - - -
FCPF400N60 FCPF400N60 ONSEMI enriquecido unipolar - N-MOSFET 600 10 30 400m ±20 31 28 TO220FP THT tubo - - - - - - - -
FCPF16N60 FCPF16N60 ONSEMI enriquecido unipolar SJ-MOSFET N-MOSFET 600 10,1 48 260m ±30 37,9 70 TO220FP THT tubo - - - - - - - -
FCPF380N60 FCPF380N60 ONSEMI enriquecido unipolar - N-MOSFET 600 10,2 30,6 380m ±20 31 30 TO220FP THT tubo - - - - - - - -
FCPF380N60E FCPF380N60E ONSEMI enriquecido unipolar - N-MOSFET 600 10,2 30,6 380m ±20 31 34 TO220FP THT tubo - - - - - - - -
FCPF20N60 FCPF20N60 ONSEMI enriquecido unipolar SuperFET® N-MOSFET 600 12,5 60 190m ±30 39 98 TO220FP THT tubo - - - - - - - -
FCPF260N60E FCPF260N60E ONSEMI enriquecido unipolar - N-MOSFET 600 15 45 260m ±20 36 48 TO220FP THT tubo - - - - - - - -
FDPF17N60NT FDPF17N60NT ONSEMI enriquecido unipolar - N-MOSFET 600 17 68 340m ±30 62,5 48 TO220FP THT tubo - - - - - - - -
FCPF190N60 FCPF190N60 ONSEMI enriquecido unipolar - N-MOSFET 600 20,2 60,6 199m ±20 39 57 TO220FP THT tubo - - - - - - - -
FCPF190N60E FCPF190N60E ONSEMI enriquecido unipolar - N-MOSFET 600 20,6 61,8 190m ±20 39 63 TO220FP THT tubo - - - - - - - -
FCH165N60E FCH165N60E ONSEMI enriquecido unipolar - N-MOSFET 600 14 69 165m ±20 227 75 TO247 THT tubo - - - - - - - -
FCH125N60E FCH125N60E ONSEMI enriquecido unipolar - N-MOSFET 600 18 87 102m ±20 278 75 TO247 THT tubo - - - - - - - -
FCH104N60F FCH104N60F ONSEMI enriquecido unipolar - N-MOSFET 600 24 - 104m ±20 357 - TO247 THT tubo - - - - - - - -
FCH104N60F-F085 FCH104N60F-F085 ONSEMI enriquecido unipolar - N-MOSFET 600 24 - 104m ±20 357 - TO247 THT tubo - - - rama automotriz - - - -
FCH070N60E FCH070N60E ONSEMI enriquecido unipolar - N-MOSFET 600 33 156 58m ±20 481 128 TO247 THT tubo - - - - - - - -
FCH072N60 FCH072N60 ONSEMI enriquecido unipolar - N-MOSFET 600 33 156 66m ±20 481 95 TO247 THT tubo - - - - - - - -
FCH072N60F FCH072N60F ONSEMI enriquecido unipolar - N-MOSFET 600 33 156 65m ±20 481 165 TO247 THT tubo - - - - - - - -
NTHL041N60S5H NTHL041N60S5H ONSEMI enriquecido unipolar - N-MOSFET 600 36 200 32,8m ±30 329 108 TO247 THT tubo - - - - - - - -
FCH47N60-F133 FCH47N60-F133 ONSEMI enriquecido unipolar SuperFET® N-MOSFET 600 47 - 70m ±30 417 270 TO247 THT tubo - - - - - - - -
FCH043N60 FCH043N60 ONSEMI enriquecido unipolar - N-MOSFET 600 47,5 225 37m ±20 592 163 TO247 THT tubo - - - - - - - -
FCH041N60E FCH041N60E ONSEMI enriquecido unipolar - N-MOSFET 600 48,7 231 36m ±20 592 285 TO247 THT tubo - - - - - - - -
FCH041N60F FCH041N60F ONSEMI enriquecido unipolar - N-MOSFET 600 76 228 36m ±20 595 277 TO247 THT tubo - - - - - - - -
FCH041N60F-F085 FCH041N60F-F085 ONSEMI enriquecido unipolar - N-MOSFET 600 76 228 36m ±20 595 277 TO247 THT tubo - - - - - - - -
FCH041N65EF-F155 FCH041N65EF-F155 ONSEMI enriquecido unipolar - N-MOSFET 600 76 228 36m ±20 595 277 TO247 THT tubo - - - - - - - -
FCH041N65EFL4 FCH041N65EFL4 ONSEMI enriquecido unipolar - N-MOSFET 600 76 228 36m ±20 595 277 TO247 THT tubo - - - - - - - -
FCH041N65F-F085 FCH041N65F-F085 ONSEMI enriquecido unipolar - N-MOSFET 600 76 228 36m ±20 595 277 TO247 THT tubo - - - - - - - -
NTHL185N60S5H NTHL185N60S5H ONSEMI enriquecido unipolar - N-MOSFET 600 15 53 185m ±30 116 25 TO247-3 THT tubo - - - - - - - -
NTHL099N60S5 NTHL099N60S5 ONSEMI enriquecido unipolar - N-MOSFET 600 33 95 99m ±30 184 48 TO247-3 THT tubo - - - - - - - -
NVHL055N60S5F NVHL055N60S5F ONSEMI enriquecido unipolar - N-MOSFET 600 45 159 55m ±30 278 85,2 TO247-3 THT tubo - - - - - - - -
FCH47N60F-F133 FCH47N60F-F133 ONSEMI enriquecido unipolar - N-MOSFET 600 47 141 73m ±30 417 210 TO247-3 THT tubo - - - - - - - -
NTHL017N60S5H NTHL017N60S5H ONSEMI enriquecido unipolar - N-MOSFET 600 75 431 17m ±30 625 265 TO247-3 THT tubo - - - - - - - -
FCA20N60-F109 FCA20N60-F109 ONSEMI enriquecido unipolar - N-MOSFET 600 20 60 190m ±30 208 75 TO3P THT tubo - - - - - - - -
FCA47N60F FCA47N60F ONSEMI enriquecido unipolar - N-MOSFET 600 47 141 73m ±30 417 210 TO3P THT tubo - - - - - - - -
FCA20N60F FCA20N60F ONSEMI enriquecido unipolar - N-MOSFET 600 12,5 60 190m ±30 208 98 TO3PN THT tubo - - - - - - - -
FQA24N60 FQA24N60 ONSEMI enriquecido unipolar QFET® N-MOSFET 600 14,9 - 240m ±30 310 145 TO3PN THT tubo - - - - - - - -
FCA36N60NF FCA36N60NF ONSEMI enriquecido unipolar - N-MOSFET 600 22 104,7 95m ±30 312 112 TO3PN THT tubo - - - - - - - -
FCA47N60 FCA47N60 ONSEMI enriquecido unipolar - N-MOSFET 600 29,7 141 70m ±30 417 270 TO3PN THT tubo - - - - - - - -
FCA47N60-F109 FCA47N60-F109 ONSEMI enriquecido unipolar SuperFET® N-MOSFET 600 29,7 141 70m ±30 417 270 TO3PN THT tubo - - - - - - - -
FCB260N65S3 FCB260N65S3 ONSEMI enriquecido unipolar - N-MOSFET 650 12 30 260m ±30 90 24 D2PAK SMD bobina, cinta - - - - - - - -
FCB199N65S3 FCB199N65S3 ONSEMI enriquecido unipolar - N-MOSFET 650 14 35 199m ±30 98 30 D2PAK SMD bobina, cinta - - - - - - - -
NTB190N65S3HF NTB190N65S3HF ONSEMI enriquecido unipolar - N-MOSFET 650 20 50 190m ±30 162 34 D2PAK SMD bobina, cinta - - - - - - - -
NVB190N65S3F NVB190N65S3F ONSEMI enriquecido unipolar - N-MOSFET 650 20 60 190m ±30 162 34 D2PAK SMD bobina, cinta - - - - - - - -
FCB125N65S3 FCB125N65S3 ONSEMI enriquecido unipolar - N-MOSFET 650 24 60 125m ±30 181 46 D2PAK SMD bobina, cinta - - - - - - - -
NTB150N65S3HF NTB150N65S3HF ONSEMI enriquecido unipolar - N-MOSFET 650 24 60 150m ±30 192 43 D2PAK SMD bobina, cinta - - - - - - - -
NVB125N65S3 NVB125N65S3 ONSEMI enriquecido unipolar - N-MOSFET 650 24 60 125m ±30 181 46 D2PAK SMD bobina, cinta - - - - - - - -
NVB150N65S3F NVB150N65S3F ONSEMI enriquecido unipolar - N-MOSFET 650 24 60 150m ±30 192 43 D2PAK SMD bobina, cinta - - - - - - - -
FCB099N65S3 FCB099N65S3 ONSEMI enriquecido unipolar - N-MOSFET 650 30 75 99m ±30 227 61 D2PAK SMD bobina, cinta - - - - - - - -
NTB110N65S3HF NTB110N65S3HF ONSEMI enriquecido unipolar - N-MOSFET 650 30 69 110m ±30 240 62 D2PAK SMD bobina, cinta - - - - - - - -
NVB099N65S3 NVB099N65S3 ONSEMI enriquecido unipolar - N-MOSFET 650 30 75 99m ±30 227 61 D2PAK SMD bobina, cinta - - - - - - - -
NVB110N65S3F NVB110N65S3F ONSEMI enriquecido unipolar - N-MOSFET 650 30 69 110m ±30 240 58 D2PAK SMD bobina, cinta - - - - - - - -
FCB110N65F FCB110N65F ONSEMI enriquecido unipolar - N-MOSFET 650 35 105 110m ±20 357 98 D2PAK SMD bobina, cinta - - - - - - - -
NTB095N65S3HF NTB095N65S3HF ONSEMI enriquecido unipolar - N-MOSFET 650 36 90 95m ±30 272 66 D2PAK SMD bobina, cinta - - - - - - - -
NVB095N65S3F NVB095N65S3F ONSEMI enriquecido unipolar - N-MOSFET 650 36 90 95m ±30 272 66 D2PAK SMD bobina, cinta - - - - - - - -
NVB082N65S3F NVB082N65S3F ONSEMI enriquecido unipolar - N-MOSFET 650 40 100 82m ±30 313 81 D2PAK SMD bobina, cinta - - - - - - - -
FCB070N65S3 FCB070N65S3 ONSEMI enriquecido unipolar - N-MOSFET 650 44 - 70m ±30 312 - D2PAK SMD bobina, cinta - - - - - - - -
NVB072N65S3 NVB072N65S3 ONSEMI enriquecido unipolar - N-MOSFET 650 44 110 72m ±30 312 82 D2PAK SMD bobina, cinta - - - - Automotive - - -
NTB082N65S3F NTB082N65S3F ONSEMI enriquecido unipolar - N-MOSFET 650 40 100 82m ±20 313 81 D2PAK-3 SMD bobina, cinta - - - - - - - -
FCD600N65S3R0 FCD600N65S3R0 ONSEMI enriquecido unipolar - N-MOSFET 650 6 15 600m ±30 54 11 DPAK SMD bobina, cinta - - - - - - - -
NTD360N65S3H NTD360N65S3H ONSEMI enriquecido unipolar - N-MOSFET 650 6 28 296m ±30 83 17,5 DPAK SMD bobina, cinta - - - - - - - -
NVD360N65S3T4G NVD360N65S3T4G ONSEMI enriquecido unipolar - N-MOSFET 650 10 25 360m ±30 83 16,8 DPAK SMD bobina, cinta - - - - - - - -
FCD260N65S3 FCD260N65S3 ONSEMI enriquecido unipolar - N-MOSFET 650 12 30 260m ±30 90 24 DPAK SMD bobina, cinta - - - - - - - -
NVD260N65S3T4G NVD260N65S3T4G ONSEMI enriquecido unipolar - N-MOSFET 650 12 30 260m ±30 90 23,5 DPAK SMD bobina, cinta - - - - - - - -
NTD250N65S3H NTD250N65S3H ONSEMI enriquecido unipolar - N-MOSFET 650 13 36 250m ±30 106 24 DPAK SMD bobina, cinta - - - - - - - -
NTBL070N65S3 NTBL070N65S3 ONSEMI enriquecido unipolar - N-MOSFET 650 44 110 70m ±30 312 82 H-PSOF8L SMD bobina, cinta - - - - - - - -
NTBL050N65S3H NTBL050N65S3H ONSEMI enriquecido unipolar - N-MOSFET 650 49 132 50m ±30 305 98 H-PSOF8L SMD bobina, cinta - - - - - - - -
FCMT360N65S3 FCMT360N65S3 ONSEMI enriquecido unipolar - N-MOSFET 650 10 25 360m ±30 83 18 PQFN4 SMD bobina, cinta - - - - - - - -
FCMT250N65S3 FCMT250N65S3 ONSEMI enriquecido unipolar - N-MOSFET 650 12 30 250m ±30 90 24 PQFN4 SMD bobina, cinta - - - - - - - -
FCMT180N65S3 FCMT180N65S3 ONSEMI enriquecido unipolar - N-MOSFET 650 17 42,5 180m ±30 139 33 PQFN4 SMD bobina, cinta - - - - - - - -
FCMT125N65S3 FCMT125N65S3 ONSEMI enriquecido unipolar - N-MOSFET 650 24 60 125m ±30 181 49 PQFN4 SMD bobina, cinta - - - - - - - -
FCMT099N65S3 FCMT099N65S3 ONSEMI enriquecido unipolar - N-MOSFET 650 30 75 99m ±30 227 56 PQFN4 SMD bobina, cinta - - - - - - - -
NTMT190N65S3H NTMT190N65S3H ONSEMI enriquecido unipolar - N-MOSFET 650 16 45 190m ±30 129 31 TDFN4 SMD bobina, cinta - - - - - - - -
NTMT190N65S3HF NTMT190N65S3HF ONSEMI enriquecido unipolar - N-MOSFET 650 20 50 190m ±30 162 34 TDFN4 SMD bobina, cinta - - - - - - - -
NTMT150N65S3HF NTMT150N65S3HF ONSEMI enriquecido unipolar - N-MOSFET 650 24 60 150m ±30 192 43 TDFN4 SMD bobina, cinta - - - - - - - -
NTMT095N65S3H NTMT095N65S3H ONSEMI enriquecido unipolar - N-MOSFET 650 30 84 95m ±30 208 58 TDFN4 SMD bobina, cinta - - - - - - - -
NTMT110N65S3HF NTMT110N65S3HF ONSEMI enriquecido unipolar - N-MOSFET 650 30 69 110m ±30 240 62 TDFN4 SMD bobina, cinta - - - - - - - -
NTMT090N65S3HF NTMT090N65S3HF ONSEMI enriquecido unipolar - N-MOSFET 650 36 90 90m ±30 272 66 TDFN4 SMD bobina, cinta - - - - - - - -
FCMT080N65S3 FCMT080N65S3 ONSEMI enriquecido unipolar - N-MOSFET 650 38 95 80m ±30 260 71 TDFN4 SMD bobina, cinta - - - - - - - -
NTMT064N65S3H NTMT064N65S3H ONSEMI enriquecido unipolar - N-MOSFET 650 40 112 64m ±30 260 82 TDFN4 SMD bobina, cinta - - - - - - - -
FCP600N65S3R0 FCP600N65S3R0 ONSEMI enriquecido unipolar - N-MOSFET 650 6 15 600m ±30 54 11 TO220-3 THT tubo - - - - - - - -
FCP360N65S3R0 FCP360N65S3R0 ONSEMI enriquecido unipolar - N-MOSFET 650 10 25 360m ±30 83 18 TO220-3 THT tubo - - - - - - - -
FCP260N65S3 FCP260N65S3 ONSEMI enriquecido unipolar - N-MOSFET 650 12 30 260m ±30 90 24 TO220-3 THT tubo - - - - - - - -
FCP190N65S3 FCP190N65S3 ONSEMI enriquecido unipolar - N-MOSFET 650 17 42,5 190m ±30 144 33 TO220-3 THT tubo - - - - - - - -
FCP190N65S3R0 FCP190N65S3R0 ONSEMI enriquecido unipolar - N-MOSFET 650 17 42,5 190m ±30 144 33 TO220-3 THT tubo - - - - - - - -
FCP165N65S3 FCP165N65S3 ONSEMI enriquecido unipolar - N-MOSFET 650 19 47,5 165m ±20 154 39 TO220-3 THT tubo - - - - - - - -
NTP165N65S3H NTP165N65S3H ONSEMI enriquecido unipolar - N-MOSFET 650 19 53 165m ±30 142 35 TO220-3 THT tubo - - - - - - - -
NTP190N65S3HF NTP190N65S3HF ONSEMI enriquecido unipolar - N-MOSFET 650 20 50 190m ±30 162 34 TO220-3 THT tubo - - - - - - - -
FCP190N65F FCP190N65F ONSEMI enriquecido unipolar - N-MOSFET 650 20,6 61,8 190m ±20 208 60 TO220-3 THT tubo - - - - - - - -
FCP125N65S3 FCP125N65S3 ONSEMI enriquecido unipolar - N-MOSFET 650 24 60 125m ±30 181 46 TO220-3 THT tubo - - - - - - - -
FCP125N65S3R0 FCP125N65S3R0 ONSEMI enriquecido unipolar - N-MOSFET 650 24 60 125m ±30 181 46 TO220-3 THT tubo - - - - - - - -
FCP150N65F FCP150N65F ONSEMI enriquecido unipolar - N-MOSFET 650 24 72 150m ±20 298 72 TO220-3 THT tubo - - - - - - - -
NTP125N65S3H NTP125N65S3H ONSEMI enriquecido unipolar - N-MOSFET 650 24 67 125m ±30 171 44 TO220-3 THT tubo - - - - - - - -
NTP150N65S3HF NTP150N65S3HF ONSEMI enriquecido unipolar - N-MOSFET 650 24 60 150m ±30 192 43 TO220-3 THT tubo - - - - - - - -
NTP095N65S3H NTP095N65S3H ONSEMI enriquecido unipolar - N-MOSFET 650 30 84 95m ±30 208 58 TO220-3 THT tubo - - - - - - - -
NTP110N65S3HF NTP110N65S3HF ONSEMI enriquecido unipolar - N-MOSFET 650 30 69 110m ±30 240 62 TO220-3 THT tubo - - - - - - - -
FCP110N65F FCP110N65F ONSEMI enriquecido unipolar - N-MOSFET 650 35 105 110m ±20 357 98 TO220-3 THT tubo - - - - - - - -
NTP095N65S3HF NTP095N65S3HF ONSEMI enriquecido unipolar - N-MOSFET 650 36 90 95m ±30 272 66 TO220-3 THT tubo - - - - - - - -
NTP067N65S3H NTP067N65S3H ONSEMI enriquecido unipolar - N-MOSFET 650 40 112 67m ±30 266 80 TO220-3 THT tubo - - - - - - - -
NTP082N65S3F NTP082N65S3F ONSEMI enriquecido unipolar - N-MOSFET 650 40 100 82m ±30 313 81 TO220-3 THT tubo - - - - - - - -
NTP055N65S3H NTP055N65S3H ONSEMI enriquecido unipolar - N-MOSFET 650 47 132 55m ±30 305 96 TO220-3 THT tubo - - - - - - - -
FCP11N60 FCP11N60 ONSEMI enriquecido unipolar SuperFET® N-MOSFET 650 11 - 380m ±30 125 52 TO220AB THT tubo - - - - - - - -
FCP067N65S3 FCP067N65S3 ONSEMI enriquecido unipolar - N-MOSFET 650 28 110 67m ±30 312 78 TO220AB THT tubo - - - - - - - -
FCPF11N60T FCPF11N60T ONSEMI enriquecido unipolar SJ-MOSFET N-MOSFET 650 7 33 380m ±30 36 52 TO220FP THT tubo - - - - - - - -
FDPF15N65 FDPF15N65 ONSEMI enriquecido unipolar - N-MOSFET 650 9,5 60 440m ±30 38,5 63 TO220FP THT tubo - - - - - - - -
NTPF360N65S3H NTPF360N65S3H ONSEMI enriquecido unipolar - N-MOSFET 650 10 28 360m ±30 26 17,5 TO220FP THT tubo - - - - - - - -
FCPF380N65FL1-F154 FCPF380N65FL1-F154 ONSEMI enriquecido unipolar - N-MOSFET 650 10,2 30,6 380m ±20 33 33 TO220FP THT tubo - - - - - - - -
FCPF11N60 FCPF11N60 ONSEMI enriquecido unipolar SuperFET® N-MOSFET 650 11 - 380m ±30 36 52 TO220FP THT tubo - - - - - - - -
NTPF250N65S3H NTPF250N65S3H ONSEMI enriquecido unipolar - N-MOSFET 650 13 36 250m ±30 29 24 TO220FP THT tubo - - - - - - - -
NTPF190N65S3H NTPF190N65S3H ONSEMI enriquecido unipolar - N-MOSFET 650 16 45 190m ±30 32 31 TO220FP THT tubo - - - - - - - -
NTPF165N65S3H NTPF165N65S3H ONSEMI enriquecido unipolar - N-MOSFET 650 19 53 165m ±30 33 35 TO220FP THT tubo - - - - - - - -
NTPF190N65S3HF NTPF190N65S3HF ONSEMI enriquecido unipolar - N-MOSFET 650 20 50 190m ±30 36 34 TO220FP THT tubo - - - - - - - -
FCPF125N65S3 FCPF125N65S3 ONSEMI enriquecido unipolar - N-MOSFET 650 24 60 125m ±30 38 44 TO220FP THT tubo - - - - - - - -
FCPF150N65F FCPF150N65F ONSEMI enriquecido unipolar - N-MOSFET 650 24 72 150m ±20 39 72 TO220FP THT tubo - - - - - - - -
NTPF125N65S3H NTPF125N65S3H ONSEMI enriquecido unipolar - N-MOSFET 650 24 67 125m ±30 37 44 TO220FP THT tubo - - - - - - - -
NTPF150N65S3HF NTPF150N65S3HF ONSEMI enriquecido unipolar - N-MOSFET 650 24 60 150m ±30 192 43 TO220FP THT tubo - - - - - - - -
FCPF099N65S3 FCPF099N65S3 ONSEMI enriquecido unipolar - N-MOSFET 650 30 75 99m ±30 43 57 TO220FP THT tubo - - - - - - - -
NTPF095N65S3H NTPF095N65S3H ONSEMI enriquecido unipolar - N-MOSFET 650 30 84 95m ±30 40 58 TO220FP THT tubo - - - - - - - -
NTPF110N65S3HF NTPF110N65S3HF ONSEMI enriquecido unipolar - N-MOSFET 650 30 69 110m ±30 240 62 TO220FP THT tubo - - - - - - - -
NTPF082N65S3F NTPF082N65S3F ONSEMI enriquecido unipolar - N-MOSFET 650 40 100 82m ±30 48 70 TO220FP THT tubo - - - - - - - -
FCPF067N65S3 FCPF067N65S3 ONSEMI enriquecido unipolar - N-MOSFET 650 44 110 67m ±30 46 78 TO220FP THT tubo - - - - - - - -
FCH165N65S3R0-F155 FCH165N65S3R0-F155 ONSEMI enriquecido unipolar - N-MOSFET 650 12,3 47,5 140m ±30 154 39 TO247 THT tubo - - - - - - - -
NTHL190N65S3HF NTHL190N65S3HF ONSEMI enriquecido unipolar - N-MOSFET 650 12,7 50 165m ±30 162 34 TO247 THT tubo - - - - - - - -
FCH125N65S3R0-F155 FCH125N65S3R0-F155 ONSEMI enriquecido unipolar - N-MOSFET 650 15 60 105m ±30 181 46 TO247 THT tubo - - - - - - - -
FCH099N65S3-F155 FCH099N65S3-F155 ONSEMI enriquecido unipolar - N-MOSFET 650 19 75 79m ±30 227 61 TO247 THT tubo - - - - - - - -
NTHL110N65S3F NTHL110N65S3F ONSEMI enriquecido unipolar SuperFET® N-MOSFET 650 19,5 69 0,11 ±30 240 58 TO247 THT tubo - - - - - - - -
NTHL095N65S3HF NTHL095N65S3HF ONSEMI enriquecido unipolar - N-MOSFET 650 22,8 90 78m ±30 272 66 TO247 THT tubo - - - - - - - -
FCH110N65F-F155 FCH110N65F-F155 ONSEMI enriquecido unipolar - N-MOSFET 650 24 105 96m ±20 357 98 TO247 THT tubo - - - - - - - -
NTH4L067N65S3H NTH4L067N65S3H ONSEMI enriquecido unipolar - N-MOSFET 650 25 112 55m ±30 266 80 TO247 THT tubo - - - - - - - -
NTH4LN067N65S3H NTH4LN067N65S3H ONSEMI enriquecido unipolar - N-MOSFET 650 25 112 55m ±30 266 80 TO247 THT tubo - - - - - - - -
NTHL082N65S3F NTHL082N65S3F ONSEMI enriquecido unipolar SuperFET® N-MOSFET 650 25,5 100 82m ±30 313 81 TO247 THT tubo - - - - - - - -
FCH067N65S3-F155 FCH067N65S3-F155 ONSEMI enriquecido unipolar - N-MOSFET 650 28 110 59m ±30 312 78 TO247 THT tubo - - - - - - - -
NTHL065N65S3F NTHL065N65S3F ONSEMI enriquecido unipolar SuperFET® N-MOSFET 650 30 115 65m ±30 337 98 TO247 THT tubo - - - - - - - -
NTHL065N65S3HF NTHL065N65S3HF ONSEMI enriquecido unipolar - N-MOSFET 650 30 115 54m ±30 337 98 TO247 THT tubo - - - - - - - -
FCH077N65F-F155 FCH077N65F-F155 ONSEMI enriquecido unipolar - N-MOSFET 650 32 162 68m ±20 481 126 TO247 THT tubo - - - - - - - -
NTHL050N65S3HF NTHL050N65S3HF ONSEMI enriquecido unipolar - N-MOSFET 650 37 145 41m ±30 378 125 TO247 THT tubo - - - - - - - -
FCH040N65S3-F155 FCH040N65S3-F155 ONSEMI enriquecido unipolar - N-MOSFET 650 41 162,5 40m ±30 417 136 TO247 THT tubo - - - - - - - -
NTH4L040N65S3F NTH4L040N65S3F ONSEMI enriquecido unipolar - N-MOSFET 650 45 162,5 32m ±30 446 158 TO247 THT tubo - - - - - - - -
NTHL040N65S3F NTHL040N65S3F ONSEMI enriquecido unipolar SuperFET® N-MOSFET 650 45 162,5 40m ±30 446 158 TO247 THT tubo - - - - - - - -
NTHL040N65S3HF NTHL040N65S3HF ONSEMI enriquecido unipolar - N-MOSFET 650 45 162,5 32m ±30 446 159 TO247 THT tubo - - - - - - - -
NTHLD040N65S3HF NTHLD040N65S3HF ONSEMI enriquecido unipolar - N-MOSFET 650 45 162,5 32m ±30 446 159 TO247 THT tubo - - - - - - - -
NVH4L040N65S3F NVH4L040N65S3F ONSEMI enriquecido unipolar - N-MOSFET 650 45 162,5 33,8m ±30 446 160 TO247 THT tubo - - - - - - - -
FCH029N65S3-F155 FCH029N65S3-F155 ONSEMI enriquecido unipolar - N-MOSFET 650 50,8 200 23,7m ±30 463 201 TO247 THT tubo - - - - - - - -
NTHL033N65S3HF NTHL033N65S3HF ONSEMI enriquecido unipolar SuperFET® N-MOSFET 650 53 175 33m ±30 500 188 TO247 THT tubo - - - - - - - -
FCH077N65F-F085 FCH077N65F-F085 ONSEMI enriquecido unipolar - N-MOSFET 650 54 156 68m ±20 481 126 TO247 THT tubo - - - - - - - -
NTH027N65S3F-F155 NTH027N65S3F-F155 ONSEMI enriquecido unipolar - N-MOSFET 650 60 187,5 23m ±30 595 259 TO247 THT tubo - - - - - - - -
NTH4L027N65S3F NTH4L027N65S3F ONSEMI enriquecido unipolar - N-MOSFET 650 60 187,5 23m ±30 595 259 TO247 THT tubo - - - - - - - -
NTHL027N65S3HF NTHL027N65S3HF ONSEMI enriquecido unipolar SuperFET® N-MOSFET 650 60 187,5 27,4m ±30 595 225 TO247 THT tubo - - - - - - - -
FCH023N65S3L4 FCH023N65S3L4 ONSEMI enriquecido unipolar - N-MOSFET 650 65,8 300 19,5m ±30 595 222 TO247 THT tubo - - - - - - - -
NTHL019N65S3H NTHL019N65S3H ONSEMI enriquecido unipolar - N-MOSFET 650 73 328 15m ±30 625 282 TO247 THT tubo - - - - - - - -
NTH4L015N065SC1 NTH4L015N065SC1 ONSEMI enriquecido unipolar - N-MOSFET 650 100 483 16m ±8 250 283 TO247 THT tubo - - - - - - - -
FCH190N65F-F155 FCH190N65F-F155 ONSEMI enriquecido unipolar - N-MOSFET 650 20,6 61,8 190m ±20 208 60 TO247-3 THT tubo - - - - - - - -
NTHL125N65S3H NTHL125N65S3H ONSEMI enriquecido unipolar - N-MOSFET 650 24 67 125m ±30 171 44 TO247-3 THT tubo - - - - - - - -
NTHL095N65S3H NTHL095N65S3H ONSEMI enriquecido unipolar - N-MOSFET 650 30 84 95m ±30 208 58 TO247-3 THT tubo - - - - - - - -
NVHL110N65S3F NVHL110N65S3F ONSEMI enriquecido unipolar - N-MOSFET 650 30 69 110m ±30 240 58 TO247-3 THT tubo - - - - - - - -
NVHL110N65S3HF NVHL110N65S3HF ONSEMI enriquecido unipolar - N-MOSFET 650 30 69 110m ±30 240 58 TO247-3 THT tubo - - - - - - - -
NTHL067N65S3H NTHL067N65S3H ONSEMI enriquecido unipolar - N-MOSFET 650 40 112 67m ±30 266 80 TO247-3 THT tubo - - - - - - - -
NTHL082N65S3HF NTHL082N65S3HF ONSEMI enriquecido unipolar - N-MOSFET 650 40 100 82m ±30 313 79 TO247-3 THT tubo - - - - - - - -
NVHL082N65S3F NVHL082N65S3F ONSEMI enriquecido unipolar - N-MOSFET 650 40 100 82m ±30 313 81 TO247-3 THT tubo - - - - - - - -
NVHL082N65S3HF NVHL082N65S3HF ONSEMI enriquecido unipolar - N-MOSFET 650 40 100 82m ±30 313 78 TO247-3 THT tubo - - - - - - - -
NVHL072N65S3 NVHL072N65S3 ONSEMI enriquecido unipolar - N-MOSFET 650 44 110 72m ±30 312 82 TO247-3 THT tubo - - - - - - - -
NVHL065N65S3F NVHL065N65S3F ONSEMI enriquecido unipolar - N-MOSFET 650 46 115 65m ±30 337 98 TO247-3 THT tubo - - - - - - - -
NVHL050N65S3HF NVHL050N65S3HF ONSEMI enriquecido unipolar - N-MOSFET 650 58 145 50m ±30 403 119 TO247-3 THT tubo - - - - - - - -
NVH040N65S3F NVH040N65S3F ONSEMI enriquecido unipolar - N-MOSFET 650 65 162,5 40m ±30 446 153 TO247-3 THT tubo - - - - - - - -
NVHL040N65S3F NVHL040N65S3F ONSEMI enriquecido unipolar - N-MOSFET 650 65 162,5 40m ±30 446 153 TO247-3 THT tubo - - - - - - - -
NVHL040N65S3HF NVHL040N65S3HF ONSEMI enriquecido unipolar - N-MOSFET 650 65 162,5 40m ±30 446 157 TO247-3 THT tubo - - - - - - - -
NVHL025N65S3 NVHL025N65S3 ONSEMI enriquecido unipolar - N-MOSFET 650 75 300 25m ±30 595 236 TO247-3 THT tubo - - - - - - - -
NVHL027N65S3F NVHL027N65S3F ONSEMI enriquecido unipolar - N-MOSFET 650 75 187,5 27,4m ±30 595 227 TO247-3 THT tubo - - - - - - - -
NTH4LN040N65S3H NTH4LN040N65S3H ONSEMI enriquecido unipolar - N-MOSFET 650 62 174 40m ±30 379 132 TO247-4 THT tubo - - - - - - - -
FQB4N80TM FQB4N80TM ONSEMI enriquecido unipolar QFET® N-MOSFET 800 2,47 - 3,6 ±30 130 - D2PAK SMD bobina, cinta - - - - - - - -
FCB290N80 FCB290N80 ONSEMI enriquecido unipolar SuperFET® N-MOSFET 800 17 - 290m ±20 212 - D2PAK SMD bobina, cinta - - - - - - - -
FQD1N80TM FQD1N80TM ONSEMI enriquecido unipolar QFET® N-MOSFET 800 0,63 - 20 ±30 45 7,2 DPAK SMD bobina, cinta - - - - - - - -
FCD3400N80Z FCD3400N80Z ONSEMI enriquecido unipolar - N-MOSFET 800 1,2 4 3,4 ±20 32 9,6 DPAK SMD bobina, cinta - - - - - - - -
FCD2250N80Z FCD2250N80Z ONSEMI enriquecido unipolar - N-MOSFET 800 2,6 6,5 2,25 ±20 39 11 DPAK SMD bobina, cinta - - - - - - - -
FCD1300N80Z FCD1300N80Z ONSEMI enriquecido unipolar - N-MOSFET 800 4 12 1,3 ±20 52 16,2 DPAK SMD bobina, cinta - - - - - - - -
NTD600N80S3Z NTD600N80S3Z ONSEMI enriquecido unipolar - N-MOSFET 800 5 21 550m ±20 60 15,5 DPAK SMD bobina, cinta - - - - - - - -
FCD850N80Z FCD850N80Z ONSEMI enriquecido unipolar - N-MOSFET 800 6 18 850m ±20 75 22 DPAK SMD bobina, cinta - - - - - - - -
NTD360N80S3Z NTD360N80S3Z ONSEMI enriquecido unipolar - N-MOSFET 800 8,2 32,5 300m ±20 96 25,3 DPAK SMD bobina, cinta - - - - - - - -
FQT1N80TF-WS FQT1N80TF-WS ONSEMI enriquecido unipolar - N-MOSFET 800 0,12 - 20 ±30 2,1 - SOT223 SMD bobina, cinta - - - - - - - -
FQI4N80TU FQI4N80TU ONSEMI enriquecido unipolar - N-MOSFET 800 2,47 15,6 3,6 ±30 130 25 I2PAK THT tubo - - - - - - - -
FQI7N80TU FQI7N80TU ONSEMI enriquecido unipolar - N-MOSFET 800 4,2 26,4 1,5 ±30 167 52 I2PAK THT tubo - - - - - - - -
FQU1N80TU FQU1N80TU ONSEMI enriquecido unipolar - N-MOSFET 800 0,63 4 20 ±30 45 7,2 IPAK THT tubo - - - - - - - -
FCP850N80Z FCP850N80Z ONSEMI enriquecido unipolar - N-MOSFET 800 8 18 850m ±20 136 22 TO220-3 THT tubo - - - - - - - -
FCPF850N80Z FCPF850N80Z ONSEMI enriquecido unipolar - N-MOSFET 800 8 18 850m ±20 28,4 22 TO220-3 THT tubo - - - - - - - -
FCPF650N80Z FCPF650N80Z ONSEMI enriquecido unipolar - N-MOSFET 800 10 24 650m ±20 30,5 27 TO220-3 THT tubo - - - - - - - -
NTP360N80S3Z NTP360N80S3Z ONSEMI enriquecido unipolar - N-MOSFET 800 13 32,5 360m ±20 96 25,3 TO220-3 THT tubo - - - - - - - -
FCP400N80Z FCP400N80Z ONSEMI enriquecido unipolar - N-MOSFET 800 14 33 400m ±20 195 43 TO220-3 THT tubo - - - - - - - -
FQP2N80 FQP2N80 ONSEMI enriquecido unipolar - N-MOSFET 800 1,52 9,6 6,3 ±30 85 15 TO220AB THT tubo - - - - - - - -
FQP3N80C FQP3N80C ONSEMI enriquecido unipolar - N-MOSFET 800 1,9 12 4,8 ±30 107 16,5 TO220AB THT tubo - - - - - - - -
FQP6N80C FQP6N80C ONSEMI enriquecido unipolar QFET® N-MOSFET 800 3,2 - 2,5 ±30 158 30 TO220AB THT tubo - - - - - - - -
FQP8N80C FQP8N80C ONSEMI enriquecido unipolar - N-MOSFET 800 5,1 32 1,55 ±30 178 45 TO220AB THT tubo - - - - - - - -
FQPF2N80 FQPF2N80 ONSEMI enriquecido unipolar - N-MOSFET 800 0,95 6 6,3 ±30 35 15 TO220FP THT tubo - - - - - - - -
FQPF2N80YDTU FQPF2N80YDTU ONSEMI enriquecido unipolar - N-MOSFET 800 0,95 6 6,3 ±30 35 15 TO220FP THT tubo - - - - - - - -
FQPF3N80C FQPF3N80C ONSEMI enriquecido unipolar QFET® N-MOSFET 800 1,9 - 4,8 ±30 39 16,5 TO220FP THT tubo - - - - - - - -
FCPF1300N80Z FCPF1300N80Z ONSEMI enriquecido unipolar SuperFET® N-MOSFET 800 2,5 - 1,3 ±20 24 21 TO220FP THT tubo - - - - - - - -
FQPF6N80CT FQPF6N80CT ONSEMI enriquecido unipolar - N-MOSFET 800 3,2 22 2,5 ±30 51 30 TO220FP THT tubo - - - - - - - -
FCPF2250N80Z FCPF2250N80Z ONSEMI enriquecido unipolar - N-MOSFET 800 3,5 6,5 2,25 ±20 21,9 11 TO220FP THT tubo - - - - - - - -
FCPF400N80Z FCPF400N80Z ONSEMI enriquecido unipolar SuperFET® N-MOSFET 800 6,9 - 400m ±20 35,7 56 TO220FP THT tubo - - - - - - - -
NTPF600N80S3Z NTPF600N80S3Z ONSEMI enriquecido unipolar - N-MOSFET 800 8 21 600m ±20 28 15,5 TO220FP THT tubo - - - - - - - -
NTPF450N80S3Z NTPF450N80S3Z ONSEMI enriquecido unipolar - N-MOSFET 800 11 25 450m ±20 29,5 19,3 TO220FP THT tubo - - - - - - - -
NTPF360N80S3Z NTPF360N80S3Z ONSEMI enriquecido unipolar - N-MOSFET 800 13 32,5 360m ±30 31 25,3 TO220FP THT tubo - - - - - - - -
FCPF290N80 FCPF290N80 ONSEMI enriquecido unipolar - N-MOSFET 800 17 42 290m ±20 40 58 TO220FP THT tubo - - - - - - - -
FCPF220N80 FCPF220N80 ONSEMI enriquecido unipolar - N-MOSFET 800 23 57 220m ±20 44 78 TO220FP THT tubo - - - - - - - -
FCH060N80-F155 FCH060N80-F155 ONSEMI enriquecido unipolar - N-MOSFET 800 36,8 174 54m ±20 500 270 TO247 THT tubo - - - - - - - -
FQA13N80-F109 FQA13N80-F109 ONSEMI enriquecido unipolar - N-MOSFET 800 8 50,4 750m ±30 300 88 TO3PN THT tubo - - - - - - - -
FQB5N90TM FQB5N90TM ONSEMI enriquecido unipolar QFET® N-MOSFET 900 3,42 - 2,3 ±30 158 40 D2PAK SMD bobina, cinta - - - - - - - -
FQB8N90CTM FQB8N90CTM ONSEMI enriquecido unipolar QFET® N-MOSFET 900 3,8 25 1,9 ±30 171 45 D2PAK SMD bobina, cinta - - - - - - - -
FQD2N90TM FQD2N90TM ONSEMI enriquecido unipolar - N-MOSFET 900 1,08 6,8 7,2 ±30 50 15 DPAK SMD bobina, cinta - - - - - - - -
FQU2N90TU-AM002 FQU2N90TU-AM002 ONSEMI enriquecido unipolar - N-MOSFET 900 1,08 6,8 7,2 ±30 50 15 IPAK THT tubo - - - - - - - -
FQU2N90TU-WS FQU2N90TU-WS ONSEMI enriquecido unipolar - N-MOSFET 900 1,08 6,8 7,2 ±30 50 15 IPAK THT tubo - - - - - - - -
FQP9N90C FQP9N90C ONSEMI enriquecido unipolar QFET® N-MOSFET 900 2,8 - 1,4 ±30 205 58 TO220AB THT tubo - - - - - - - -
FQPF5N90 FQPF5N90 ONSEMI enriquecido unipolar - N-MOSFET 900 1,9 12 2,3 ±30 51 40 TO220FP THT tubo - - - - - - - -
FQPF9N90CT FQPF9N90CT ONSEMI enriquecido unipolar - N-MOSFET 900 2,8 32 1,4 ±30 68 58 TO220FP THT tubo - - - - - - - -
FQAF11N90C FQAF11N90C ONSEMI enriquecido unipolar QFET® N-MOSFET 900 4,4 - 1,1 ±30 120 80 TO3PF THT tubo - - - - - - - -
FQA8N90C-F109 FQA8N90C-F109 ONSEMI enriquecido unipolar - N-MOSFET 900 5,1 32 1,9 ±30 240 45 TO3PN THT tubo - - - - - - - -
FQH8N100C FQH8N100C ONSEMI enriquecido unipolar - N-MOSFET 1k 5 32 1,45 ±30 225 70 TO247 THT tubo - - - - - - - -
FQA8N100C FQA8N100C ONSEMI enriquecido unipolar - N-MOSFET 1000 5 - 1,45 ±30 225 - TO3PN THT tubo - - - - - - - -
NTHL080N120SC1A NTHL080N120SC1A ONSEMI enriquecido unipolar - N-MOSFET 1200 22 132 114m ±25 178 56 TO247 THT tubo - - - - - - - -
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