Modules MOSFET, IXYS

Modules MOSFET, IXYS, VMM650-01F, VMM300-03F, VMM90-09F, IXTN32P60P, IXTN40P50P, IXTN120P20T |FR|
Polarisationunipolaire
FabricantIXYS
Type de module semi-conducteurde transistor MOSFET
Référence: (VMxxxF, IXFN340N07, IXFN36N100, IXFN55N50, IXFN100N50P, IXFN80N50, IXFN24N100)
La technologieHiPerFET
Référence: (IXTNxxx0P)
La technologiePolarP
Référence: (IXTN120P20T, IXTN210P10T)
La technologieTrenchP
Référence: (IXTN600N04T2, IXTN550N055T2)
La technologieGigaMOS, TrenchT2
Référence: (IXTNxxxL2)
La technologieLinear L2
Référence: (IXFNxxxT2)
La technologieGigaMOS, HiPerFET, TrenchT2
Référence: (IXFN2xxx0P, IXFN300N10P, IXFN30N120P, IXFN32N100P, IXFN32N120P, IXFN38N100P, IXFN140N20P, IXFN140N30P, IXFN102N30P, IXFN170N30P, IXFN132N50P3, IXFN64N50P, IXFN60N80P, IXFN82N60P, IXFN44N80P, IXFN44N100P, IXFN40N90P, IXFN40N110P, IXFN52N90P, IXFN56N90P)
La technologieHiPerFET, Polar
Référence: (IXTN200N10T)
La technologieTrenchMV
Référence: (IXFN360N10T, IXFN420N10T, IXFN140N25T)
La technologieGigaMOS, HiPerFET
Référence: (IXFN180N15P)
La technologieHiPerFET, PolarHT
Référence: (IXFNxxxX3)
La technologieHiPerFET, X3-Class
Référence: (IXFN230N20T, IXFN180N25T, IXFN160N30T)
La technologieGigaMOS
Référence: (IXFN210N30P3, IXFN80N60P3, IXFN110N60P3)
La technologieHiPerFET, Polar3
Référence: (IXTN62N50L, IXTN22N100L, IXTN30N100L, IXTN17N120L, IXTN8N150L)
La technologieLinear
Référence: (IXFNxxx0Q3)
La technologieHiPerFET, Q3-Class
Référence: (IXFN80N50P, IXFN48N60P, IXFN64N60P, IXFN32N80P)
La technologieHiPerFET, PolarHV
Référence: (IXFN94N50P2)
La technologieHiPerFET, Polar2
Référence: (IXKNxxx0C)
La technologieCoolMOS
Référence: (IXTN102N65X2)
La technologieX2-Class
Référence: (IXFN1x0N65X2)
La technologieHiPerFET, X2-Class
Référence: (IXFNxxxX)
La technologieHiPerFET, X-Class
Référence: (IXFNxxx0SK)
La technologieSiC
Référence Genre de canal Structure Uds Id Idm Ugs Rds(on) Puissance de dissipation Topologie QG trr Boîtier Montage électrique Montage mécanique Caractéristiques
[V] [A] [A] [V] [Ω] [W] [C] [s]
VMM300-03F - transistor/transistor 300 220 1,16k ±20 7,4m 1,5k demi-pont MOSFET - - Y3-DCB FASTON connecteurs, vissés vissés -
IXTN32P60P enrichi transistor simple -600 -32 -96 ±30 350m 890 - 196n 480n SOT227B vissés vissés -
IXTN40P50P enrichi transistor simple -500 -40 -120 ±30 230m 890 - 205n 477n SOT227B vissés vissés -
IXTN120P20T enrichi transistor simple -200 -106 -400 ±15 30m 830 - 740n 300n SOT227B vissés vissés -
IXTN90P20P enrichi transistor simple -200 -90 -270 ±30 44m 890 - 205n 315n SOT227B vissés vissés -
IXTN210P10T enrichi transistor simple -100 -210 -800 ±15 7,5m 830 - 740n 200n SOT227B vissés vissés -
IXTN170P10P enrichi transistor simple -100 -170 -510 ±30 14m 890 - 240n 176n SOT227B vissés vissés -
IXTN600N04T2 enrichi transistor simple 40 600 1,8k ±30 1,3m 940 - 590n 100n SOT227B vissés vissés -
IXTN550N055T2 enrichi transistor simple 55 550 1,65k ±30 1,3m 940 - 595n 100n SOT227B vissés vissés -
IXFN340N07 enrichi transistor simple 70 340 1,36k ±30 4m 700 - 490n 200n SOT227B vissés vissés -
IXTN240N075L2 enrichi transistor simple 75 225 720 ±30 7m 735 - 546n 206n SOT227B vissés vissés -
IXFN520N075T2 enrichi transistor simple 75 480 1,5k ±30 1,9m 940 - 545n 150n SOT227B vissés vissés -
IXTN200N10L2 enrichi transistor simple 100 178 500 ±30 11m 830 - 540n 245n SOT227B vissés vissés -
IXFN200N10P enrichi transistor simple 100 200 400 ±30 7,5m 680 - 235n 150n SOT227B vissés vissés -
IXTN200N10T enrichi transistor simple 100 200 500 ±30 5,5m 550 - 152n 76n SOT227B vissés vissés -
IXFN300N10P enrichi transistor simple 100 295 900 ±30 5,5m 1070 - 279n 200n SOT227B vissés vissés -
IXFN360N10T enrichi transistor simple 100 360 900 ±30 2,6m 830 - 525n 130n SOT227B vissés vissés -
IXFN420N10T enrichi transistor simple 100 420 1k ±30 2,3m 1,07k - 670n 140n SOT227B vissés vissés -
VMO550-01F enrichi transistor simple 100 590 2,36k ±20 2,1m 2,2k - 2µ 300n Y3-DCB FASTON connecteurs, vissés vissés sortie Kelvin
IXFN180N15P enrichi transistor simple 150 150 380 ±30 11m 680 - 240n 200n SOT227B vissés vissés -
IXFN240N15T2 enrichi transistor simple 150 240 600 ±30 5,2m 830 - 460n 140n SOT227B vissés vissés -
IXFN360N15T2 enrichi transistor simple 150 310 900 ±30 4m 1070 - 715n 150n SOT227B vissés vissés -
IXFN400N15X3 enrichi transistor simple 150 400 900 ±30 2,5m 695 - 365n 132n SOT227B vissés vissés -
IXFN320N17T2 enrichi transistor simple 170 260 800 ±30 5,2m 1070 - 640n 150n SOT227B vissés vissés -
IXTN110N20L2 enrichi transistor simple 200 100 275 ±30 24m 735 - 500n 420n SOT227B vissés vissés -
IXFN140N20P enrichi transistor simple 200 115 280 ±30 18m 680 - 240n 150n SOT227B vissés vissés -
IXFN220N20X3 enrichi transistor simple 200 160 500 ±30 6,2m 390 - 204n 128n SOT227B vissés vissés -
IXFN210N20P enrichi transistor simple 200 188 600 ±30 10,5m 1070 - 255n 200n SOT227B vissés vissés -
IXFN230N20T enrichi transistor simple 200 220 630 ±30 7,5m 1090 - 358n 200n SOT227B vissés vissés -
IXFN300N20X3 enrichi transistor simple 200 300 700 ±30 3,5m 695 - 375n 172n SOT227B vissés vissés -
IXTN90N25L2 enrichi transistor simple 250 90 360 ±30 36m 735 - 640n 266n SOT227B vissés vissés -
IXFN140N25T enrichi transistor simple 250 120 400 ±30 17m 690 - 255n 200n SOT227B vissés vissés -
IXFN170N25X3 enrichi transistor simple 250 146 400 ±30 7,4m 390 - 190n 135n SOT227B vissés vissés -
IXFN180N25T enrichi transistor simple 250 168 500 ±30 12,9m 900 - 364n 200n SOT227B vissés vissés -
IXFN240N25X3 enrichi transistor simple 250 240 600 ±30 4,5m 695 - 345n 165n SOT227B vissés vissés -
IXTN80N30L2 enrichi transistor simple 300 80 200 ±30 38m 735 - 660n 485n SOT227B vissés vissés -
IXFN102N30P enrichi transistor simple 300 86 250 ±30 33m 570 - 224n 200n SOT227B vissés vissés -
IXFN140N30P enrichi transistor simple 300 110 300 ±30 24m 700 - 185n 200n SOT227B vissés vissés -
IXFN160N30T enrichi transistor simple 300 130 444 ±30 19m 900 - 376n 200n SOT227B vissés vissés -
IXFN170N30P enrichi transistor simple 300 138 500 ±30 18m 890 - 258n 200n SOT227B vissés vissés -
IXFN210N30P3 enrichi transistor simple 300 192 550 ±30 14,5m 1500 - 268n 250n SOT227B vissés vissés -
IXFN210N30X3 enrichi transistor simple 300 210 650 ±20 4,6m 695 - 375n 190n SOT227B vissés vissés -
IXTN46N50L enrichi transistor simple 500 46 100 ±40 160m 700 - 260n 600n SOT227B vissés vissés -
IXFN64N50P enrichi transistor simple 500 50 150 ±40 85m 625 - 150n 200n SOT227B vissés vissés -
IXTN60N50L2 enrichi transistor simple 500 53 150 ±40 100m 735 - 610n 980n SOT227B vissés vissés -
IXFN55N50 enrichi transistor simple 500 55 220 ±40 80m 625 - 330n 250n SOT227B vissés vissés -
VMO60-05F enrichi transistor simple 500 60 240 ±20 65m 590 - 405n 250n TO240AA FASTON connecteurs, vissés vissés sortie Kelvin
IXTN62N50L enrichi transistor simple 500 62 150 ±40 100m 800 - 550n 500n SOT227B vissés vissés -
IXFN80N50Q3 enrichi transistor simple 500 63 240 ±40 65m 780 - 200n 250n SOT227B vissés vissés -
IXFN80N50P enrichi transistor simple 500 66 200 ±30 65m 700 - 195n 200n SOT227B vissés vissés -
IXFN94N50P2 enrichi transistor simple 500 68 240 ±40 55m 780 - 220n 250n SOT227B vissés vissés -
IXFN100N50P enrichi transistor simple 500 75 250 ±30 49m 1,04k - 240n 200n SOT227B vissés vissés -
IXFN80N50 enrichi transistor simple 500 80 320 ±40 55m 694 - 380n 250n SOT227B vissés vissés -
IXFN100N50Q3 enrichi transistor simple 500 82 300 ±40 49m 960 - 255n 250n SOT227B vissés vissés -
IXFN132N50P3 enrichi transistor simple 500 112 330 ±40 39m 1500 - 250n 250n SOT227B vissés vissés -
IXKN40N60C enrichi transistor simple 600 40 - ±20 70m 290 - 250n 650n SOT227B vissés vissés -
IXFN48N60P enrichi transistor simple 600 40 110 ±40 140m 625 - 150n 200n SOT227B vissés vissés -
IXFN64N60P enrichi transistor simple 600 50 150 ±40 96m 700 - 200n 200n SOT227B vissés vissés -
IXKN75N60C enrichi transistor simple 600 50 250 ±20 36m 560 - 500n 580n SOT227B vissés vissés -
IXFN80N60P3 enrichi transistor simple 600 66 200 ±40 77m 960 - 190n 250n SOT227B vissés vissés -
IXFN82N60Q3 enrichi transistor simple 600 66 240 ±40 75m 960 - 275n 300n SOT227B vissés vissés -
IXFN82N60P enrichi transistor simple 600 72 200 ±40 75m 1040 - 240n 200n SOT227B vissés vissés -
IXFN110N60P3 enrichi transistor simple 600 90 275 ±40 56m 1500 - 254n 250n SOT227B vissés vissés -
IXTN102N65X2 enrichi transistor simple 650 76 204 ±40 30m 595 - 152n 450n SOT227B vissés vissés -
IXFN100N65X2 enrichi transistor simple 650 78 200 ±40 30m 595 - 183n 200n SOT227B vissés vissés -
IXFN120N65X2 enrichi transistor simple 650 108 240 ±40 24m 890 - 240n 220n SOT227B vissés vissés -
IXFN150N65X2 enrichi transistor simple 650 145 300 ±30 17m 1040 - 355n 190n SOT227B vissés vissés -
IXFN170N65X2 enrichi transistor simple 650 170 340 ±30 13m 1170 - 434n 270n SOT227B vissés vissés -
IXFN32N80P enrichi transistor simple 800 29 250 ±40 270m 625 - 150n 250n SOT227B vissés vissés -
IXFN44N80Q3 enrichi transistor simple 800 37 130 ±40 190m 780 - 185n 300n SOT227B vissés vissés -
IXFN44N80P enrichi transistor simple 800 39 100 ±30 190m 694 - 200n 250n SOT227B vissés vissés -
IXKN45N80C enrichi transistor simple 800 44 - ±20 74m 380 - 360n 800n SOT227B vissés vissés -
IXFN62N80Q3 enrichi transistor simple 800 49 180 ±40 140m 960 - 270n 300n SOT227B vissés vissés -
IXFN60N80P enrichi transistor simple 800 53 150 ±30 140m 1040 - 250n 250n SOT227B vissés vissés -
IXFN66N85X enrichi transistor simple 850 65 140 ±40 65m 830 - 230n 250n SOT227B vissés vissés -
IXFN90N85X enrichi transistor simple 850 90 180 ±40 41m 1200 - 340n 250n SOT227B vissés vissés -
IXFN110N85X enrichi transistor simple 850 110 220 ±40 33m 1170 - 425n 205n SOT227B vissés vissés -
IXFN40N90P enrichi transistor simple 900 33 80 ±40 230m 695 - 230n 300n SOT227B vissés vissés -
IXFN52N90P enrichi transistor simple 900 43 104 ±40 160m 890 - 308n 300n SOT227B vissés vissés -
IXFN56N90P enrichi transistor simple 900 56 168 ±40 145m 1000 - 375n 300n SOT227B vissés vissés -
IXFN130N90SK enrichi transistor simple 900 109 - - 10m - - 68n - SOT227B vissés vissés sortie Kelvin
IXTN22N100L enrichi transistor simple 1k 22 50 ±40 600m 700 - 270n 1µ SOT227B vissés vissés -
IXFN26N100P enrichi transistor simple 1k 23 65 ±40 390m 595 - 197n 300n SOT227B vissés vissés -
IXFN24N100 enrichi transistor simple 1k 24 96 ±30 390m 568 - 250n 250n SOT227B vissés vissés -
IXFN32N100P enrichi transistor simple 1k 27 75 ±40 320m 690 - 225n 300n SOT227B vissés vissés -
IXFN32N100Q3 enrichi transistor simple 1k 28 96 ±40 320m 780 - 195n 300n SOT227B vissés vissés -
IXTN30N100L enrichi transistor simple 1k 30 70 ±40 450m 800 - 545n 1µ SOT227B vissés vissés -
IXFN36N100 enrichi transistor simple 1k 36 144 ±30 240m 694 - 380n 180n SOT227B vissés vissés -
IXFN44N100P enrichi transistor simple 1k 37 110 ±40 220m 890 - 350n 300n SOT227B vissés vissés -
IXFN44N100Q3 enrichi transistor simple 1k 38 110 ±40 220m 960 - 264n 300n SOT227B vissés vissés -
IXFN38N100P enrichi transistor simple 1k 38 120 ±40 210m 1000 - 350n 300n SOT227B vissés vissés -
IXFN52N100X enrichi transistor simple 1k 44 100 ±40 125m 830 - 245n 260n SOT227B vissés vissés -
IXFN40N110P enrichi transistor simple 1,1k 34 100 ±40 260m 890 - 310n 300n SOT227B vissés vissés -
IXFN40N110Q3 enrichi transistor simple 1,1k 35 100 ±40 260m 960 - 300n 434n SOT227B vissés vissés -
IXTN17N120L enrichi transistor simple 1,2k 15 34 ±40 900m 540 - 155n 1,83µ SOT227B vissés vissés -
IXFN20N120P enrichi transistor simple 1,2k 20 50 ±40 570m 595 - 193n 300n SOT227B vissés vissés -
IXFN27N120SK enrichi transistor simple 1,2k 21,5 - - 80m - - 160n - SOT227B vissés vissés sortie Kelvin
IXFN26N120P enrichi transistor simple 1,2k 23 60 ±40 500m 695 - 255n 300n SOT227B vissés vissés -
IXFN30N120P enrichi transistor simple 1,2k 30 75 ±40 350m 890 - 310n 300n SOT227B vissés vissés -
IXFN32N120P enrichi transistor simple 1,2k 32 100 ±40 310m 1000 - 360n 300n SOT227B vissés vissés -
IXTN8N150L enrichi transistor simple 1,5k 7,5 20 ±40 3,6 545 - 250n 1,7µ SOT227B vissés vissés -
IXFN90N170SK enrichi transistor simple 1,7k 67 - - 23m - - 376n - SOT227B vissés vissés sortie Kelvin
VUM25-05E - diode/transistor 500 35 95 ±20 120m 36 3-phase PFC - - V1-A-Pack FASTON connecteurs vissés -
VUM85-05A - diode/transistor 500 130 520 ±20 36m 1,38k 3-phase PFC - - V2-Pack Press-in PCB vissés -
VUM33-06PH - diode/transistor 600 50 - ±20 120m 500 boost chopper, redresseur 1-phase à diodes - - V1-B-Pack FASTON connecteurs vissés -
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