Transistors IGBT, STARPOWER SEMICONDUCTOR LTD.

Référence Fabricant Transistor Uce Ic Icm Uge Pd QG Boîtier Montage Emballage t(on) t(off) Caractéristiques
[V] [A] [A] [V] [W] [µC] [ns] [ns]
DG10X06T1 STARPOWER SEMICONDUCTOR IGBT 600 19 30 ±20 196 0,07 TO220 THT tube 21 208 integrated anti-parallel diode
DG10X12T2 STARPOWER SEMICONDUCTOR IGBT 1200 10 30 ±20 96 0,08 TO247 THT tube 37 493 integrated anti-parallel diode
DG120X07T2 STARPOWER SEMICONDUCTOR IGBT 650 120 360 ±20 893 0,86 TO247PLUS THT tube 282 334 integrated anti-parallel diode
DG15X06T1 STARPOWER SEMICONDUCTOR IGBT 600 24 45 ±20 235 0,1 TO220 THT tube 23 208 integrated anti-parallel diode
DG15X12T2 STARPOWER SEMICONDUCTOR IGBT 1200 15 45 ±20 138 0,12 TO247 THT tube 103 484 integrated anti-parallel diode
DG20X06T1 STARPOWER SEMICONDUCTOR IGBT 600 29 60 ±20 313 0,14 TO220 THT tube 26 200 integrated anti-parallel diode
DG20X06T2 STARPOWER SEMICONDUCTOR IGBT 600 29 60 ±20 166 0,14 TO247 THT tube 26 200 integrated anti-parallel diode
DG25X12T2 STARPOWER SEMICONDUCTOR IGBT 1200 25 75 ±20 348 0,19 TO247 THT tube 36 362 integrated anti-parallel diode
DG30X07T2 STARPOWER SEMICONDUCTOR IGBT 650 30 90 ±20 208 0,22 TO247 THT tube 100 306 integrated anti-parallel diode
DG40X12T2 STARPOWER SEMICONDUCTOR IGBT 1200 40 120 ±20 468 0,27 TO247 THT tube 198 668 integrated anti-parallel diode
DG50Q12T2 STARPOWER SEMICONDUCTOR IGBT 1200 50 150 ±20 672 0,37 TO247PLUS THT tube 172 338 integrated anti-parallel diode
DG50X07T2 STARPOWER SEMICONDUCTOR IGBT 650 50 150 ±20 714 0,35 TO247 THT tube 36 200 integrated anti-parallel diode
DG50X12T2 STARPOWER SEMICONDUCTOR IGBT 1200 50 150 ±20 592 0,35 TO247PLUS THT tube 180 607 integrated anti-parallel diode
DG75H12T2 STARPOWER SEMICONDUCTOR IGBT 1,2k 75 - - - - - THT tube - - -
DG75X07T2L STARPOWER SEMICONDUCTOR IGBT 650 75 300 ±20 428 0,52 TO247PLUS THT tube 264 369 integrated anti-parallel diode
DG75X12T2 STARPOWER SEMICONDUCTOR IGBT 1200 75 225 ±20 852 0,49 TO247PLUS THT tube 163 559 integrated anti-parallel diode