Transistors SiC, ONSEMI

Référence Indication du fabricant Fabricant Polarisation Genre de canal La technologie Transistor Genre de transistor Uds Id Idm Montage Boîtier Emballage Tension entrée-source Puissance de dissipation Rds(on) QG Caractéristiques Ver.
[V] [A] [A] [V] [W] [Ω] [C]
NTBG014N120M3P NTBG014N120M3P ONSEMI unipolaire enrichi SiC N-MOSFET - 1,2k 106 452 SMD D2PAK-7 rouleau, bande -10...22 326 29m 377n sortie Kelvin -
NTBG015N065SC1 NTBG015N065SC1 ONSEMI unipolaire enrichi SiC N-MOSFET - 650 103 422 SMD D2PAK-7 rouleau, bande -5...18 250 16m 283n sortie Kelvin -
NTBG020N090SC1 NTBG020N090SC1 ONSEMI unipolaire enrichi SiC N-MOSFET - 900 9,8 448 SMD D2PAK-7 rouleau, bande -5...15 3,7 27m 200n sortie Kelvin -
NTBG020N120SC1 NTBG020N120SC1 ONSEMI unipolaire enrichi SiC N-MOSFET - 1,2k 8,6 392 SMD D2PAK-7 rouleau, bande -5...20 3,7 50m 220n sortie Kelvin -
NTBG022N120M3S NTBG022N120M3S ONSEMI unipolaire enrichi SiC N-MOSFET - 1,2k 71 297 SMD D2PAK-7 rouleau, bande -10...22 220 44m 142n sortie Kelvin -
NTBG025N065SC1 NTBG025N065SC1 ONSEMI unipolaire enrichi SiC N-MOSFET - 650 75 284 SMD D2PAK-7 rouleau, bande -5...18 197 24m 164n sortie Kelvin -
NTBG028N170M1 NTBG028N170M1 ONSEMI unipolaire enrichi SiC N-MOSFET - 1,7k 53 195 SMD D2PAK-7 rouleau, bande -5...20 214 57m 222n sortie Kelvin -
NTBG030N120M3S NTBG030N120M3S ONSEMI unipolaire enrichi SiC N-MOSFET - 1,2k 54 207 SMD D2PAK-7 rouleau, bande -10...22 174 58m 107n sortie Kelvin -
NTBG040N120M3S NTBG040N120M3S ONSEMI unipolaire enrichi SiC N-MOSFET - 1,2k 40 149 SMD D2PAK-7 rouleau, bande -10...22 131 80m 75n sortie Kelvin -
NTBG040N120SC1 NTBG040N120SC1 ONSEMI unipolaire enrichi SiC N-MOSFET - 1,2k 43 240 SMD D2PAK-7 rouleau, bande -5...20 178 100m 106n sortie Kelvin -
NTBG045N065SC1 NTBG045N065SC1 ONSEMI unipolaire enrichi SiC N-MOSFET - 650 44 184 SMD D2PAK-7 rouleau, bande -5...18 121 40m 105n sortie Kelvin -
NTBG060N065SC1 NTBG060N065SC1 ONSEMI unipolaire enrichi SiC N-MOSFET - 650 33 130 SMD D2PAK-7 rouleau, bande -5...18 85 50m 74n sortie Kelvin -
NTBG060N090SC1 NTBG060N090SC1 ONSEMI unipolaire enrichi SiC N-MOSFET - 900 5,8 176 SMD D2PAK-7 rouleau, bande -5...15 3,6 135m 88n sortie Kelvin -
NTBG070N120M3S NTBG070N120M3S ONSEMI unipolaire enrichi SiC N-MOSFET - 1,2k 25 93 SMD D2PAK-7 rouleau, bande -10...22 86 136m 57n sortie Kelvin -
NTBG080N120SC1 NTBG080N120SC1 ONSEMI unipolaire enrichi SiC N-MOSFET - 1,2k 21 110 SMD D2PAK-7 rouleau, bande -5...20 89 121m 56n sortie Kelvin -
NTBG1000N170M1 NTBG1000N170M1 ONSEMI unipolaire enrichi SiC N-MOSFET - 1,7k 3 14,6 SMD D2PAK-7 rouleau, bande -5...20 25 1,8 14n sortie Kelvin -
NTBG160N120SC1 NTBG160N120SC1 ONSEMI unipolaire enrichi SiC N-MOSFET - 1,2k 13,7 78 SMD D2PAK-7 rouleau, bande -5...20 68 365m 33,8n sortie Kelvin -
NTBL045N065SC1 NTBL045N065SC1 ONSEMI unipolaire enrichi SiC N-MOSFET - 650 51 182 SMD H-PSOF8L rouleau, bande -5...18 174 40m 105n sortie Kelvin -
NTH4L013N120M3S NTH4L013N120M3S ONSEMI unipolaire enrichi SiC N-MOSFET - 1,2k 107 505 THT TO247-4 tube -10...22 340 29m 254n sortie Kelvin -
NTH4L014N120M3P NTH4L014N120M3P ONSEMI unipolaire enrichi SiC N-MOSFET - 1,2k 107 407 THT TO247-4 tube -10...22 343 29m 322n sortie Kelvin -
NTH4L020N120SC1 NTH4L020N120SC1 ONSEMI unipolaire enrichi SiC N-MOSFET - 1,2k 84 408 THT TO247-4 tube -15...25 255 28m 220n sortie Kelvin -
NTH4L022N120M3S NTH4L022N120M3S ONSEMI unipolaire enrichi SiC N-MOSFET - 1,2k 62 275 THT TO247-4 tube -10...22 174 44m 137n sortie Kelvin -
NTH4L023N065M3S NTH4L023N065M3S ONSEMI unipolaire enrichi SiC N-MOSFET - 650 47 225 THT TO247-4 tube -8...22 122 37m 69n sortie Kelvin -
NTH4L025N065SC1 NTH4L025N065SC1 ONSEMI unipolaire enrichi SiC N-MOSFET - 650 70 323 THT TO247-4 tube -5...18 174 24m 164n sortie Kelvin -
NTH4L028N170M1 NTH4L028N170M1 ONSEMI unipolaire enrichi SiC N-MOSFET - 1,7k 57 363 THT TO247-4 tube -5...20 267 57n 200n sortie Kelvin -
NTH4L030N120M3S NTH4L030N120M3S ONSEMI unipolaire enrichi SiC N-MOSFET - 1,2k 52 193 THT TO247-4 tube -10...22 156 58m 107n sortie Kelvin -
NTH4L040N120M3S NTH4L040N120M3S ONSEMI unipolaire enrichi SiC N-MOSFET - 1,2k 38 134 THT TO247-4 tube -10...22 115 80m 75n sortie Kelvin -
NTH4L040N120SC1 NTH4L040N120SC1 ONSEMI unipolaire enrichi SiC N-MOSFET - 1,2k 41 232 THT TO247-4 tube -15...25 160 56m 106n sortie Kelvin -
NTH4L045N065SC1 NTH4L045N065SC1 ONSEMI unipolaire enrichi SiC N-MOSFET - 650 39 197 THT TO247-4 tube -5...18 94 41m 105n sortie Kelvin -
NTH4L060N065SC1 NTH4L060N065SC1 ONSEMI unipolaire enrichi SiC N-MOSFET - 650 33 152 THT TO247-4 tube -8...22 88 50m 74n sortie Kelvin -
NTH4L060N090SC1 NTH4L060N090SC1 ONSEMI unipolaire enrichi SiC N-MOSFET - 900 32 211 THT TO247-4 tube -5...15 110 76m 87n sortie Kelvin -
NTH4L070N120M3S NTH4L070N120M3S ONSEMI unipolaire enrichi SiC N-MOSFET - 1,2k 24 98 THT TO247-4 tube -10...22 80 136m 57n sortie Kelvin -
NTH4L075N065SC1 NTH4L075N065SC1 ONSEMI unipolaire enrichi SiC N-MOSFET - 650 26 120 THT TO247-4 tube -5...18 74 68m 61n sortie Kelvin -
NTH4L080N120SC1 NTH4L080N120SC1 ONSEMI unipolaire enrichi SiC N-MOSFET - 1,2k 21 125 THT TO247-4 tube -15...25 28 80m 56n sortie Kelvin -
NTH4L160N120SC1 NTH4L160N120SC1 ONSEMI unipolaire enrichi SiC N-MOSFET - 1,2k 12,3 69 THT TO247-4 tube -15...25 55,5 224m 34n sortie Kelvin -
NTHL015N065SC1 NTHL015N065SC1 ONSEMI unipolaire enrichi SiC N-MOSFET - 650 115 484 THT TO247-3 tube -5...18 321 16m 283n - -
NTHL020N090SC1 NTHL020N090SC1 ONSEMI unipolaire enrichi SiC N-MOSFET - 900 83 427 THT TO247-3 tube -10...19 251 28m 196n - -
NTHL020N120SC1 NTHL020N120SC1 ONSEMI unipolaire enrichi SiC N-MOSFET - 1,2k 73 412 THT TO247-3 tube -15...25 267 28m 66n - -
NTHL022N120M3S NTHL022N120M3S ONSEMI unipolaire enrichi SiC N-MOSFET - 1,2k 62 275 THT TO247-3 tube -10...22 174 44m 137n - -
NTHL023N065M3S NTHL023N065M3S ONSEMI unipolaire enrichi SiC N-MOSFET - 650 49 218 THT TO247-3 tube -8...22 131 37m 69n - -
NTHL025N065SC1 NTHL025N065SC1 ONSEMI unipolaire enrichi SiC N-MOSFET - 650 70 323 THT TO247-3 tube -5...18 174 24m 164n - -
NTHL040N120M3S NTHL040N120M3S ONSEMI unipolaire enrichi SiC N-MOSFET - 1,2k 38 134 THT TO247-3 tube -10...22 115 80m 75n - -
NTHL040N120SC1 NTHL040N120SC1 ONSEMI unipolaire enrichi SiC N-MOSFET - 1,2k 42 240 THT TO247-3 tube -15...25 174 56m 106n - -
NTHL045N065SC1 NTHL045N065SC1 ONSEMI unipolaire enrichi SiC N-MOSFET - 650 46 191 THT TO247-3 tube -5...18 145 42m 105n - -
NTHL060N065SC1 NTHL060N065SC1 ONSEMI unipolaire enrichi SiC N-MOSFET - 900 33 143 THT TO247-3 tube -5...18 88 49m 74n - -
NTHL060N090SC1 NTHL060N090SC1 ONSEMI unipolaire enrichi SiC N-MOSFET - 900 32 184 THT TO247-3 tube -10...20 110 60m 87n - -
NTHL075N065SC1 NTHL075N065SC1 ONSEMI unipolaire enrichi SiC N-MOSFET - 650 26 120 THT TO247-3 tube -5...18 74 68m 61n - -
NTHL1000N170M1 NTHL1000N170M1 ONSEMI unipolaire enrichi SiC N-MOSFET - 1,7k 3 14 THT TO247-3 tube -5...20 24 1,8 14n - -
NTHL160N120SC1 NTHL160N120SC1 ONSEMI unipolaire enrichi SiC N-MOSFET - 1,2k 12 69 THT TO247-3 tube -15...25 59 160m 34n - -
NTMT045N065SC1 NTMT045N065SC1 ONSEMI unipolaire enrichi SiC N-MOSFET - 650 39 197 SMD TDFN4 rouleau, bande -5...18 94 40m 105n sortie Kelvin -
NVBG015N065SC1 NVBG015N065SC1 ONSEMI unipolaire enrichi SiC N-MOSFET - 650 103 442 SMD D2PAK-7 rouleau, bande -5...18 250 16m 283n sortie Kelvin -
NVBG020N090SC1 NVBG020N090SC1 ONSEMI unipolaire enrichi SiC N-MOSFET - 900 9,8 448 SMD D2PAK-7 rouleau, bande -5...15 3,7 27m 200n sortie Kelvin -
NVBG020N120SC1 NVBG020N120SC1 ONSEMI unipolaire enrichi SiC N-MOSFET - 1,2k 8,6 392 SMD D2PAK-7 rouleau, bande -5...20 3,7 50m 220n sortie Kelvin -
NVBG022N120M3S NVBG022N120M3S ONSEMI unipolaire enrichi SiC N-MOSFET - 1,2k 71 297 SMD D2PAK-7 rouleau, bande -3...18 220 44m 142n sortie Kelvin -
NVBG025N065SC1 NVBG025N065SC1 ONSEMI unipolaire enrichi SiC N-MOSFET - 650 75 284 SMD D2PAK-7 rouleau, bande -5...18 197 24m 164n sortie Kelvin -
NVBG030N120M3S NVBG030N120M3S ONSEMI unipolaire enrichi SiC N-MOSFET - 1,2k 54 207 SMD D2PAK-7 rouleau, bande -3...18 174 58m 107n sortie Kelvin -
NVBG040N120M3S NVBG040N120M3S ONSEMI unipolaire enrichi SiC N-MOSFET - 1,2k 40 149 SMD D2PAK-7 rouleau, bande -3...18 131 80m 75n sortie Kelvin -
NVBG040N120SC1 NVBG040N120SC1 ONSEMI unipolaire enrichi SiC N-MOSFET - 1,2k 43 240 SMD D2PAK-7 rouleau, bande -5...20 178 100m 106n sortie Kelvin -
NVBG045N065SC1 NVBG045N065SC1 ONSEMI unipolaire enrichi SiC N-MOSFET - 650 44 184 SMD D2PAK-7 rouleau, bande -5...18 121 40m 105n sortie Kelvin -
NVBG060N065SC1 NVBG060N065SC1 ONSEMI unipolaire enrichi SiC N-MOSFET - 650 33 130 SMD D2PAK-7 rouleau, bande -5...18 85 50m 74n sortie Kelvin -
NVBG060N090SC1 NVBG060N090SC1 ONSEMI unipolaire enrichi SiC N-MOSFET - 900 5,8 176 SMD D2PAK-7 rouleau, bande -5...15 3,6 135m 88n sortie Kelvin -
NVBG070N120M3S NVBG070N120M3S ONSEMI unipolaire enrichi SiC N-MOSFET - 1,2k 25 93 SMD D2PAK-7 rouleau, bande -3...18 86 136m 57n sortie Kelvin -
NVBG080N120SC1 NVBG080N120SC1 ONSEMI unipolaire enrichi SiC N-MOSFET - 1,2k 21 132 SMD D2PAK-7 rouleau, bande -5...20 89 121m 56n sortie Kelvin -
NVBG095N065SC1 NVBG095N065SC1 ONSEMI unipolaire enrichi SiC N-MOSFET - 650 21 79 SMD D2PAK-7 rouleau, bande -5...18 55 85m 50n sortie Kelvin -
NVBG1000N170M1 NVBG1000N170M1 ONSEMI unipolaire enrichi SiC N-MOSFET - 1,7k 3 14,6 SMD D2PAK-7 rouleau, bande -5...20 25 1,8 14n sortie Kelvin -
NVBG160N120SC1 NVBG160N120SC1 ONSEMI unipolaire enrichi SiC N-MOSFET - 1,2k 13,7 78 SMD D2PAK-7 rouleau, bande -5...15 68 365m 33,8n sortie Kelvin -
NVH4L015N065SC1 NVH4L015N065SC1 ONSEMI unipolaire enrichi SiC N-MOSFET - 650 100 483 THT TO247-4 tube -5...18 250 16 283 sortie Kelvin -
NVH4L018N075SC1 NVH4L018N075SC1 ONSEMI unipolaire enrichi SiC N-MOSFET - 750 99 483 THT TO247-4 tube -5...18 250 19m 262n sortie Kelvin -
NVH4L020N120SC1 NVH4L020N120SC1 ONSEMI unipolaire enrichi SiC N-MOSFET - 1,2k 71,4 408 THT TO247-4 tube -5...20 250 50m 220n sortie Kelvin -
NVH4L022N120M3S NVH4L022N120M3S ONSEMI unipolaire enrichi SiC N-MOSFET - 1,2k 62 275 THT TO247-4 tube -3...18 174 44m 137n sortie Kelvin -
NVH4L025N065SC1 NVH4L025N065SC1 ONSEMI unipolaire enrichi SiC N-MOSFET - 650 70 323 THT TO247-4 tube -5...18 174 24m 164 sortie Kelvin -
NVH4L030N120M3S NVH4L030N120M3S ONSEMI unipolaire enrichi SiC N-MOSFET - 1,2k 52 193 THT TO247-4 tube -3...18 156 58m 107n sortie Kelvin -
NVH4L040N120M3S NVH4L040N120M3S ONSEMI unipolaire enrichi SiC N-MOSFET - 1,2k 38 134 THT TO247-4 tube -3...18 115 80m 75n sortie Kelvin -
NVH4L040N120SC1 NVH4L040N120SC1 ONSEMI unipolaire enrichi SiC N-MOSFET - 1,2k 41 232 THT TO247-4 tube -5...20 160 100m 106n sortie Kelvin -
NVH4L045N065SC1 NVH4L045N065SC1 ONSEMI unipolaire enrichi SiC N-MOSFET - 650 55 197 THT TO247-4 tube -8...22 187 50m 105n sortie Kelvin -
NVH4L060N065SC1 NVH4L060N065SC1 ONSEMI unipolaire enrichi SiC N-MOSFET - 650 33 152 THT TO247-4 tube -5...18 88 50m 74n sortie Kelvin -
NVH4L060N090SC1 NVH4L060N090SC1 ONSEMI unipolaire enrichi SiC N-MOSFET - 900 46 211 THT TO247-4 tube -8...22 221 84m 87n sortie Kelvin -
NVH4L080N120SC1 NVH4L080N120SC1 ONSEMI unipolaire enrichi SiC N-MOSFET - 1,2k 21 125 THT TO247-4 tube -5...20 28 162m 56n sortie Kelvin -
NVH4L160N120SC1 NVH4L160N120SC1 ONSEMI unipolaire enrichi SiC N-MOSFET - 1,2k 12,3 69 THT TO247-4 tube -5...20 55,5 377m 34n sortie Kelvin -
NVHL015N065SC1 NVHL015N065SC1 ONSEMI unipolaire enrichi SiC N-MOSFET - 650 115 484 THT TO247-3 tube -5...18 321 16m 283n - -
NVHL020N090SC1 NVHL020N090SC1 ONSEMI unipolaire enrichi SiC N-MOSFET - 900 83 472 THT TO247-3 tube -10...19 251 28m 78n - -
NVHL020N120SC1 NVHL020N120SC1 ONSEMI unipolaire enrichi SiC N-MOSFET - 1,2k 73 267 THT TO247-3 tube -5...20 267 50m 203n - -
NVHL040N120SC1 NVHL040N120SC1 ONSEMI unipolaire enrichi SiC N-MOSFET - 1,2k 42 240 THT TO247-3 tube -5...20 174 100m 106n - -
NVHL060N090SC1 NVHL060N090SC1 ONSEMI unipolaire enrichi SiC N-MOSFET - 900 32 184 THT TO247-3 tube -5...15 110 135m 87n - -
NVHL080N120SC1A NVHL080N120SC1A ONSEMI unipolaire enrichi SiC N-MOSFET - 1,2k 22 132 THT TO247-3 tube -5...20 89 114m 56n - -
NVHL1000N170M1 NVHL1000N170M1 ONSEMI unipolaire enrichi SiC N-MOSFET - 1,7k 3 14 THT TO247-3 tube -5...20 24 1,8 14n - -
NVHL160N120SC1 NVHL160N120SC1 ONSEMI unipolaire enrichi SiC N-MOSFET - 1,2k 12 69 THT TO247-3 tube -5...20 59 337m 34n - -
UF3C065030K3S UF3C065030K3S ONSEMI unipolaire enrichi SiC N-JFET / N-MOSFET cascode 650 62 230 THT TO247-3 tube ±25 441 27m 51n - ESD
UF3C065030K4S UF3C065030K4S ONSEMI unipolaire enrichi SiC N-JFET / N-MOSFET cascode 650 62 230 THT TO247-4 tube ±25 441 27m 43n sortie Kelvin ESD
UF3C065080K4S UF3C065080K4S ONSEMI unipolaire enrichi SiC N-JFET / N-MOSFET cascode 650 23 65 THT TO247-4 tube ±25 190 80m 43n sortie Kelvin ESD
UF3N120007K4S UF3N120007K4S ONSEMI unipolaire enrichi SiC N-JFET / N-MOSFET - 1,2k 120 550 THT TO247-4 tube ±30 789 15,5m 830n sortie Kelvin -
UJ3C065030K3S UJ3C065030K3S ONSEMI unipolaire enrichi SiC N-JFET / N-MOSFET cascode 650 62 230 THT TO247-3 tube ±25 441 30m 51n - ESD
UJ3C065030T3S UJ3C065030T3S ONSEMI unipolaire enrichi SiC N-JFET / N-MOSFET cascode 650 62 230 THT TO220-3 tube ±25 441 27m 51n - ESD
UJ3C065080K3S UJ3C065080K3S ONSEMI unipolaire enrichi SiC N-JFET / N-MOSFET cascode 650 23 65 THT TO247-3 tube ±25 190 80m 51n - ESD
UJ3C065080T3S UJ3C065080T3S ONSEMI unipolaire enrichi SiC N-JFET / N-MOSFET cascode 650 23 65 THT TO220-3 tube ±25 190 80m 51n - ESD
UJ3C120040K3S UJ3C120040K3S ONSEMI unipolaire enrichi SiC N-JFET / N-MOSFET cascode 1,2k 47 175 THT TO247-3 tube ±20 429 35m 51n - ESD
UJ3C120070K3S UJ3C120070K3S ONSEMI unipolaire enrichi SiC N-JFET / N-MOSFET cascode 1,2k 25,5 80 THT TO247-3 tube -25...25 254,2 148m 46n - -
UJ3C120070K4S UJ3C120070K4S ONSEMI unipolaire enrichi SiC N-JFET / N-MOSFET cascode 1,2k 25,5 80 THT TO247-4 tube -25...25 254,2 148m 46n - -
UJ3C120080K3S UJ3C120080K3S ONSEMI unipolaire enrichi SiC N-JFET / N-MOSFET cascode 1,2k 35 140 THT TO247-3 tube -25...25 242 75m 37,8 - -
UJ3C120150K3S UJ3C120150K3S ONSEMI unipolaire enrichi SiC N-JFET / N-MOSFET cascode 1,2k 13,8 38 THT TO247-3 tube -25...25 166 330m 63n - -
UJ3N065025K3S UJ3N065025K3S ONSEMI unipolaire enrichi SiC N-JFET / N-MOSFET cascode 650 62 250 THT TO247-3 tube -20...20 441 43m 240n - -
UJ3N065080K3S UJ3N065080K3S ONSEMI unipolaire enrichi SiC N-JFET / N-MOSFET cascode 650 24 72 THT TO247-3 tube -20...20 190 130m 75n - -
UJ3N120035K3S UJ3N120035K3S ONSEMI unipolaire enrichi SiC N-JFET / N-MOSFET cascode 1,2k 46 185 THT TO247-3 tube -20...20 429 76m 235n - -
UJ3N120065K3S UJ3N120065K3S ONSEMI unipolaire enrichi SiC N-JFET / N-MOSFET cascode 1,2k 25 90 THT TO247-3 tube -30...20 254 142m 114n - -
UJ3N120070K3S UJ3N120070K3S ONSEMI unipolaire enrichi SiC N-JFET / N-MOSFET cascode 1,2k 24,5 85 THT TO247-3 tube -20...20 254 154m 116n - -
UJ4C075018K3S UJ4C075018K3S ONSEMI unipolaire enrichi SiC N-JFET / N-MOSFET cascode 750 60 205 THT TO247-3 tube -25...25 385 41m 37,8n - -
UJ4C075018K4S UJ4C075018K4S ONSEMI unipolaire enrichi SiC N-JFET / N-MOSFET cascode 750 60 205 THT TO247-4 tube -25...25 385 41m 37,8n - -
UJ4C075023B7S UJ4C075023B7S ONSEMI unipolaire enrichi SiC N-JFET / N-MOSFET cascode 750 46 196 SMD D2PAK-7 tube -25...25 278 50m 37,8n - -
UJ4C075023K3S UJ4C075023K3S ONSEMI unipolaire enrichi SiC N-JFET / N-MOSFET cascode 750 49 196 THT TO247-3 tube -25...25 306 50m 37,8n - -
UJ4C075023K4S UJ4C075023K4S ONSEMI unipolaire enrichi SiC N-JFET / N-MOSFET cascode 750 49 196 THT TO247-4 tube -25...25 306 50m 37,8n - -
UJ4C075033K3S UJ4C075033K3S ONSEMI unipolaire enrichi SiC N-JFET / N-MOSFET cascode 750 35 140 THT TO247-3 tube -25...25 242 75 37,8n - -
UJ4C075033K4S UJ4C075033K4S ONSEMI unipolaire enrichi SiC N-JFET / N-MOSFET cascode 750 35 140 THT TO247-4 tube -25...25 242 75 37,8n - -
UJ4C075044K3S UJ4C075044K3S ONSEMI unipolaire enrichi SiC N-JFET / N-MOSFET cascode 750 27,6 110 THT TO247-3 tube -25...25 203 101m 37,8n - -
UJ4C075044K4S UJ4C075044K4S ONSEMI unipolaire enrichi SiC N-JFET / N-MOSFET cascode 750 27,6 110 THT TO247-4 tube -25...25 203 101m 37,8n - -
UJ4C075060B7S UJ4C075060B7S ONSEMI unipolaire enrichi SiC N-JFET / N-MOSFET cascode 750 19 76 SMD TO263-7 tube -25...25 128 147m 37,8n - -
UJ4C075060K3S UJ4C075060K3S ONSEMI unipolaire enrichi SiC N-JFET / N-MOSFET cascode 750 20,6 62 THT TO247-3 tube -25...25 155 147m 37,8n - -
UJ4C075060K4S UJ4C075060K4S ONSEMI unipolaire enrichi SiC N-JFET / N-MOSFET cascode 750 20,6 62 THT TO247-4 tube -25...25 155 147m 37,8n - -
UJ4SC075005L8S UJ4SC075005L8S ONSEMI unipolaire enrichi SiC N-JFET / N-MOSFET cascode 750 120 588 SMD H-PDSO-F8 tube -25...25 1153 12,2m 164n - -
UJ4SC075006K4S UJ4SC075006K4S ONSEMI unipolaire enrichi SiC N-JFET / N-MOSFET cascode 750 120 588 THT TO247-4 tube -25...25 714 12,9m 164n - -
UJ4SC075008L8S UJ4SC075008L8S ONSEMI unipolaire enrichi SiC N-JFET / N-MOSFET cascode 750 106 344 SMD H-PDSO-F8 tube -25...25 600 19m 75n - -
UJ4SC075009B7S UJ4SC075009B7S ONSEMI unipolaire enrichi SiC N-JFET / N-MOSFET cascode 750 86 344 SMD TO263-7 tube -25...25 375 19,4m 75n - -
UJ4SC075009K4S UJ4SC075009K4S ONSEMI unipolaire enrichi SiC N-JFET / N-MOSFET cascode 750 86 344 THT TO247-4 tube -25...25 375 19,4m 75n - -
UJ4SC075011B7S UJ4SC075011B7S ONSEMI unipolaire enrichi SiC N-JFET / N-MOSFET cascode 750 75 300 SMD TO263-7 tube -25...25 357 24,2m 75n - -
UJ4SC075011K4S UJ4SC075011K4S ONSEMI unipolaire enrichi SiC N-JFET / N-MOSFET cascode 750 75 300 THT TO247-4 tube -25...25 357 24,2m 75n - -
UJ4SC075018B7S UJ4SC075018B7S ONSEMI unipolaire enrichi SiC N-JFET / N-MOSFET cascode 750 52 208 SMD TO263-7 tube -25...25 259 37m 37,8n - -
UJ4SC075018L8S UJ4SC075018L8S ONSEMI unipolaire enrichi SiC N-JFET / N-MOSFET cascode 750 53 208 SMD H-PDSO-F8 tube -25...25 349 37m 37,8n - -
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Transfer Multisort Elektronik Sp. z o.o.

ul. Ustronna 41, 93-350 Łódź, Pologne
NIP: 729-010-89-84, VAT UE: PL7290108984
TGI de la ville de Łódź - Śródmieście
KRS:0000165815
Capital social: 3 300 000 PLN

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