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SQ3427EV-T1_GE3 VISHAY - Transistor P-MOSFET

Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -5.3A; Idm: -21A

Manufacturer part number:
SQ3427EV-T1_GE3

TME Symbol:
SQ3427EV-T1-GE3

Specification

Manufacturer
VISHAY
Type of transistor
P-MOSFET
Technology
TrenchFET®
Polarisation
unipolar
Drain-source voltage
-60V
Drain current
-5.3A
Pulsed drain current
-21A
Power dissipation
5W
Case
TSOP6
Gate-source voltage
±20V
On-state resistance
178mΩ
Mounting
SMD
Gate charge
22nC
Kind of package
reel, tape
Kind of channel
enhancement
Gross weight0.039 g
Certificates
See other products in this category: SMD P channel transistors VISHAY,
*
SQ3427EV-T1_GE3
null in TME stock
No. of pieces (Multiplicity: 1)
Total: no-prices
Packaging method by the manufacturerReel = 3 000 pcs