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B1M080120HC

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W

Documentation EN

Manufacturer: BASiC SEMICONDUCTOR

Manufacturer part number:
B1M080120HC
TME Symbol:
B1M080120HC

Specification

Manufacturer
BASiC SEMICONDUCTOR
Type of transistor
N-MOSFET
Technology
SiC
Polarisation
unipolar
Drain-source voltage
1.2kV
Drain current
27A
Pulsed drain current
80A
Power dissipation
241W
Case
TO247-3
Gate-source voltage
-5...20V
On-state resistance
80mΩ
Mounting
THT
Gate charge
149nC
Kind of package
tube
Kind of channel
enhancement
Gross weight6.26 g
Certificates

Transfer Multisort Elektronik Sp. z o.o. is an importer of products of this brand

See other products in this category: THT N channel transistors BASiC SEMICONDUCTOR,
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B1M080120HC
36 in TME stock
Net price for quantities from 1 pcs - 20.00 EURGross price for quantities from 1 pcs - 20.00 EUR
Net price for quantities from 5 pcs - 18.00 EURGross price for quantities from 5 pcs - 18.00 EUR
Net price for quantities from 30 pcs - 15.90 EURGross price for quantities from 30 pcs - 15.90 EUR
Net price for quantities from 150 pcs - 13.41 EURGross price for quantities from 150 pcs - 13.41 EUR
Net price for quantities from 600 pcs - 12.81 EURGross price for quantities from 600 pcs - 12.81 EUR
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Packaging method by the manufacturerTube = 30 pcs