B2M600170H
Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 10A; 75W
Manufacturer: BASiC SEMICONDUCTOR
Manufacturer part number:
B2M600170H
TME Symbol:
B2M600170H
Specification
Manufacturer | BASiC SEMICONDUCTOR | |
Type of transistor | N-MOSFET | |
Technology | SiC | |
Polarisation | unipolar | |
Drain-source voltage | 1.7kV | |
Drain current | 5A | |
Pulsed drain current | 10A | |
Power dissipation | 75W | |
Case | TO247-3 | |
Gate-source voltage | -4...18V | |
On-state resistance | 0.6Ω | |
Mounting | THT | |
Gate charge | 14nC | |
Kind of package | tube | |
Kind of channel | enhancement |
Gross weight6.2 g
Certificates
Transfer Multisort Elektronik Sp. z o.o. is an importer of products of this brand
See other products in this category: THT N channel transistors BASiC SEMICONDUCTOR,
* B2M600170HNo. of pieces (Multiplicity: 1)
0 in TME stock
Net price for quantities from 1 pcs - 1.09 EURGross price for quantities from 1 pcs - 1.09 EUR
Net price for quantities from 10 pcs - 0.98 EURGross price for quantities from 10 pcs - 0.98 EUR
Net price for quantities from 30 pcs - 0.87 EURGross price for quantities from 30 pcs - 0.87 EUR
Net price for quantities from 120 pcs - 0.79 EURGross price for quantities from 120 pcs - 0.79 EUR
Net price for quantities from 300 pcs - 0.73 EURGross price for quantities from 300 pcs - 0.73 EUR
Packaging method by the manufacturerTube = 30 pcs