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BGH75N65ZF1

Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4

Documentation EN

Manufacturer: BASiC SEMICONDUCTOR

Manufacturer part number:
BGH75N65ZF1
TME Symbol:
BGH75N65ZF1

Specification

Manufacturer
BASiC SEMICONDUCTOR
Type of transistor
IGBT
Technology
Field Stop, SiC SBD, Trench
Collector-emitter voltage
650V
Collector current
75A
Power dissipation
405W
Case
TO247-4
Gate-emitter voltage
±20V
Pulsed collector current
300A
Mounting
THT
Gate charge
444nC
Kind of package
tube
Turn-on time
84ns
Turn-off time
565ns
Features of semiconductor devices
integrated anti-parallel diode
Gross weight6.687 g
Certificates

Transfer Multisort Elektronik Sp. z o.o. is an importer of products of this brand

See other products in this category: THT IGBT transistors BASiC SEMICONDUCTOR,
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BGH75N65ZF1
29 in TME stock
Net price for quantities from 1 pcs - 12.59 EURGross price for quantities from 1 pcs - 12.59 EUR
Net price for quantities from 5 pcs - 11.30 EURGross price for quantities from 5 pcs - 11.30 EUR
Net price for quantities from 30 pcs - 9.94 EURGross price for quantities from 30 pcs - 9.94 EUR
Net price for quantities from 150 pcs - 8.33 EURGross price for quantities from 150 pcs - 8.33 EUR
Net price for quantities from 600 pcs - 8.02 EURGross price for quantities from 600 pcs - 8.02 EUR
No. of pieces (Multiplicity: 1)
Packaging method by the manufacturerTube = 30 pcs