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Manufacturer	ONSEMI
Type of transistor	N-MOSFET x2
Polarisation	unipolar
Drain-source voltage	100V
Drain current	1.2A
Pulsed drain current	5A
Power dissipation	0.96W
Case	SuperSOT-6
Gate-source voltage	±20V
On-state resistance	0.6Ω
Mounting	SMD
Gate charge	2nC
Kind of package	reel, tape
Kind of channel	enhancement

FDC8602

Transistor: N-MOSFET x2; unipolar; 100V; 1.2A; Idm: 5A; 960mW

Specification

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