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Manufacturer	IXYS
Type of semiconductor module	MOSFET transistor
Semiconductor structure	single transistor
Drain-source voltage	300V
Drain current	192A
Case	SOT227B
Electrical mounting	screw
Polarisation	unipolar
On-state resistance	14.5mΩ
Pulsed drain current	550A
Power dissipation	1.5kW
Technology	HiPerFET™, Polar3™
Kind of channel	enhancement
Gate charge	268nC
Reverse recovery time	250ns
Gate-source voltage	±30V
Mechanical mounting	screw

IXFN210N30P3

Module; single transistor; 300V; 192A; SOT227B; screw; Idm: 550A

Specification