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Manufacturer	IXYS
Type of semiconductor module	MOSFET transistor
Semiconductor structure	single transistor
Drain-source voltage	150V
Drain current	310A
Case	SOT227B
Electrical mounting	screw
Polarisation	unipolar
On-state resistance	4mΩ
Pulsed drain current	900A
Power dissipation	1.07kW
Technology	GigaMOS™, HiPerFET™, TrenchT2™
Kind of channel	enhancement
Gate charge	715nC
Reverse recovery time	150ns
Gate-source voltage	±30V
Mechanical mounting	screw

IXFN360N15T2

Module; single transistor; 150V; 310A; SOT227B; screw; Idm: 900A

Specification