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Manufacturer	IXYS
Type of semiconductor module	MOSFET transistor
Semiconductor structure	single transistor
Drain-source voltage	-100V
Drain current	-170A
Case	SOT227B
Electrical mounting	screw
Polarisation	unipolar
On-state resistance	14mΩ
Pulsed drain current	-510A
Power dissipation	890W
Technology	PolarP™
Kind of channel	enhancement
Gate charge	240nC
Reverse recovery time	176ns
Gate-source voltage	±30V
Mechanical mounting	screw

IXTN170P10P

Module; single transistor; -100V; -170A; SOT227B; screw; Idm: -510A

Specification