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Manufacturer	MICROCHIP TECHNOLOGY
Type of diode	TVS
Peak pulse power dissipation	0.15kW
Max. off-state voltage	6.8V
Breakdown voltage	7.79V
Max. forward impulse current	11.7A
Semiconductor structure	unidirectional
Mounting	SMD
Leakage current	20µA
Number of channels	1
Capacitance	4pF
Operating temperature	-55...175°C

MX1N8149US

Diode: TVS; 0.15kW; 7.79V; 11.7A; unidirectional; Ch: 1; 4pF

Specification

Transfer Multisort Elektronik Sp. z o.o. is an importer of products of this brand