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STGP30M65DF2

Transistor: IGBT; 650V; 30A; 258W; TO220AB

Documentation EN
Product family

Manufacturer: STMicroelectronics

Manufacturer part number:
STGP30M65DF2
TME Symbol:
STGP30M65DF2

Specification

Manufacturer
STMicroelectronics
Type of transistor
IGBT
Collector-emitter voltage
650V
Collector current
30A
Power dissipation
258W
Case
TO220AB
Gate-emitter voltage
±20V
Pulsed collector current
120A
Mounting
THT
Gate charge
80nC
Kind of package
tube
Features of semiconductor devices
integrated anti-parallel diode
Gross weight1.997 g
Certificates
See other products in this category: THT IGBT transistors STMicroelectronics,
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STGP30M65DF2
191 in TME stock
Net price for quantities from 1 pcs - 1.88 GBPGross price for quantities from 1 pcs - 1.88 GBP
Net price for quantities from 3 pcs - 1.69 GBPGross price for quantities from 3 pcs - 1.69 GBP
Net price for quantities from 10 pcs - 1.38 GBPGross price for quantities from 10 pcs - 1.38 GBP
Net price for quantities from 50 pcs - 1.04 GBPGross price for quantities from 50 pcs - 1.04 GBP
Net price for quantities from 100 pcs - 0.94 GBPGross price for quantities from 100 pcs - 0.94 GBP
Net price for quantities from 150 pcs - 0.91 GBPGross price for quantities from 150 pcs - 0.91 GBP
No. of pieces (Multiplicity: 1)
Packaging method by the manufacturerTube = 50 pcs