B2M160120R
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 39A; 117W
Manufacturer: BASiC SEMICONDUCTOR
Manufacturer part number:
B2M160120R
TME Symbol:
B2M160120R
Specification
Manufacturer | BASiC SEMICONDUCTOR | |
Type of transistor | N-MOSFET | |
Technology | SiC | |
Polarisation | unipolar | |
Drain-source voltage | 1.2kV | |
Drain current | 15A | |
Pulsed drain current | 39A | |
Power dissipation | 117W | |
Case | TO263-7 | |
Gate-source voltage | -4...18V | |
On-state resistance | 0.16Ω | |
Mounting | SMD | |
Gate charge | 26nC | |
Kind of package | reel, tape | |
Kind of channel | enhancement | |
Features of semiconductor devices | Kelvin terminal |
Gross weight1 g
Certificates
Transfer Multisort Elektronik Sp. z o.o. is an importer of products of this brand
See other products in this category: SMD N channel transistors BASiC SEMICONDUCTOR,
* B2M160120RNo. of pieces (Multiplicity: 1)
0 in TME stock
Net price for quantities from 1 pcs - 1.15 EURGross price for quantities from 1 pcs - 1.43 EUR
Net price for quantities from 10 pcs - 1.03 EURGross price for quantities from 10 pcs - 1.29 EUR
Net price for quantities from 100 pcs - 0.91 EURGross price for quantities from 100 pcs - 1.14 EUR
Net price for quantities from 400 pcs - 0.83 EURGross price for quantities from 400 pcs - 1.03 EUR
Net price for quantities from 800 pcs - 0.77 EURGross price for quantities from 800 pcs - 0.96 EUR