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BGH50N65HF1

Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3

Manufacturer: BASiC SEMICONDUCTOR

Manufacturer part number:
BGH50N65HF1
TME Symbol:
BGH50N65HF1

Specification

Manufacturer
BASiC SEMICONDUCTOR
Type of transistor
IGBT
Technology
Field Stop, SiC SBD, Trench
Collector-emitter voltage
650V
Collector current
50A
Power dissipation
357W
Case
TO247-3
Gate-emitter voltage
±20V
Pulsed collector current
200A
Mounting
THT
Gate charge
308nC
Kind of package
tube
Turn-on time
54ns
Turn-off time
256ns
Features of semiconductor devices
integrated anti-parallel diode
Gross weight6.245 g
Certificates

Transfer Multisort Elektronik Sp. z o.o. is an importer of products of this brand

See other products in this category: THT IGBT transistors BASiC SEMICONDUCTOR,
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BGH50N65HF1
57 in TME stock
Net price for quantities from 1 pcs - 13.21 USDGross price for quantities from 1 pcs - 16.51 USD
Net price for quantities from 5 pcs - 11.96 USDGross price for quantities from 5 pcs - 14.95 USD
Net price for quantities from 30 pcs - 10.52 USDGross price for quantities from 30 pcs - 13.15 USD
Net price for quantities from 150 pcs - 8.82 USDGross price for quantities from 150 pcs - 11.01 USD
Net price for quantities from 600 pcs - 8.51 USDGross price for quantities from 600 pcs - 10.63 USD
No. of pieces (Multiplicity: 1)
Packaging method by the manufacturerTube = 30 pcs