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GD20PJX65F1S

Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 20A

Product family

Manufacturer: STARPOWER SEMICONDUCTOR

Manufacturer part number:
GD20PJX65F1S
TME Symbol:
GD20PJX65F1S

Specification

Manufacturer
STARPOWER SEMICONDUCTOR
Type of semiconductor module
IGBT
Semiconductor structure
diode/transistor
Topology
boost chopper, IGBT three-phase bridge OE output, NTC thermistor, three-phase diode bridge
Max. off-state voltage
650V
Collector current
20A
Case
F1.1
Electrical mounting
Press-in PCB
Gate-emitter voltage
±20V
Pulsed collector current
40A
Technology
Trench FS IGBT
Mechanical mounting
screw
Gross weight26 g
Certificates
See other products in this category: IGBT modules STARPOWER SEMICONDUCTOR,
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GD20PJX65F1S
0 in TME stock
Net price for quantities from 1 pcs - 40.58 USDGross price for quantities from 1 pcs - 50.73 USD
Net price for quantities from 3 pcs - 35.95 USDGross price for quantities from 3 pcs - 44.93 USD
Net price for quantities from 10 pcs - 32.24 USDGross price for quantities from 10 pcs - 40.29 USD
Net price for quantities from 25 pcs - 30.15 USDGross price for quantities from 25 pcs - 37.68 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.