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B2D20120H1

Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ir: 40uA

Manufacturer: BASiC SEMICONDUCTOR

Manufacturer part number:
B2D20120H1
TME Symbol:
B2D20120H1

Specification

Manufacturer
BASiC SEMICONDUCTOR
Type of diode
Schottky rectifying
Technology
SiC
Mounting
THT
Max. off-state voltage
1.2kV
Load current
20A
Semiconductor structure
single diode
Case
TO247-2
Max. forward voltage
1.78V
Max. forward impulse current
190A
Leakage current
40µA
Power dissipation
159W
Kind of package
tube
Gross weight5.85 g
Certificates

Transfer Multisort Elektronik Sp. z o.o. is an importer of products of this brand

See other products in this category: THT Schottky diodes BASiC SEMICONDUCTOR,
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B2D20120H1
29 in TME stock
Net price for quantities from 1 pcs - 5.15 EURGross price for quantities from 1 pcs - 5.15 EUR
Net price for quantities from 5 pcs - 4.63 EURGross price for quantities from 5 pcs - 4.63 EUR
Net price for quantities from 30 pcs - 4.09 EURGross price for quantities from 30 pcs - 4.09 EUR
Net price for quantities from 150 pcs - 3.44 EURGross price for quantities from 150 pcs - 3.44 EUR
Net price for quantities from 600 pcs - 3.32 EURGross price for quantities from 600 pcs - 3.32 EUR
No. of pieces (Multiplicity: 1)
Packaging method by the manufacturerTube = 30 pcs