B2M160120H
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 39A; 123W
Manufacturer: BASiC SEMICONDUCTOR
Manufacturer part number:
B2M160120H
TME Symbol:
B2M160120H
Specification
Manufacturer | BASiC SEMICONDUCTOR | |
Type of transistor | N-MOSFET | |
Technology | SiC | |
Polarisation | unipolar | |
Drain-source voltage | 1.2kV | |
Drain current | 16A | |
Pulsed drain current | 39A | |
Power dissipation | 123W | |
Case | TO247-3 | |
Gate-source voltage | -4...18V | |
On-state resistance | 0.16Ω | |
Mounting | THT | |
Gate charge | 26nC | |
Kind of package | tube | |
Kind of channel | enhancement |
Gross weight1 g
Certificates
Transfer Multisort Elektronik Sp. z o.o. is an importer of products of this brand
See other products in this category: THT N channel transistors BASiC SEMICONDUCTOR,
* B2M160120HNo. of pieces (Multiplicity: 1)
0 in TME stock
Net price for quantities from 1 pcs - 1.42 EURGross price for quantities from 1 pcs - 1.42 EUR
Net price for quantities from 10 pcs - 1.28 EURGross price for quantities from 10 pcs - 1.28 EUR
Net price for quantities from 30 pcs - 1.13 EURGross price for quantities from 30 pcs - 1.13 EUR
Net price for quantities from 120 pcs - 1.01 EURGross price for quantities from 120 pcs - 1.01 EUR
Net price for quantities from 300 pcs - 0.95 EURGross price for quantities from 300 pcs - 0.95 EUR