IXFN360N10T
Module; single transistor; 100V; 360A; SOT227B; screw; Idm: 900A
Manufacturer: IXYS
Manufacturer part number:
IXFN360N10T
TME Symbol:
IXFN360N10T
Specification
Manufacturer | IXYS | |
Type of semiconductor module | MOSFET transistor | |
Semiconductor structure | single transistor | |
Drain-source voltage | 100V | |
Drain current | 360A | |
Case | SOT227B | |
Electrical mounting | screw | |
Polarisation | unipolar | |
On-state resistance | 2.6mΩ | |
Pulsed drain current | 900A | |
Power dissipation | 830W | |
Technology | GigaMOS™, HiPerFET™ | |
Kind of channel | enhancement | |
Gate charge | 525nC | |
Reverse recovery time | 130ns | |
Gate-source voltage | ±30V | |
Mechanical mounting | screw |
Gross weight36.9 g
Certificates
See other products in this category: Transistor modules IXYS,
* IXFN360N10TNo. of pieces (Multiplicity: 1)
242 in TME stock
Net price for quantities from 1 pcs - 19.04 GBPGross price for quantities from 1 pcs - 19.04 GBP
Net price for quantities from 5 pcs - 18.36 GBPGross price for quantities from 5 pcs - 18.36 GBP
Net price for quantities from 10 pcs - 17.58 GBPGross price for quantities from 10 pcs - 17.58 GBP
Net price for quantities from 20 pcs - 17.20 GBPGross price for quantities from 20 pcs - 17.20 GBP
Net price for quantities from 50 pcs - 16.48 GBPGross price for quantities from 50 pcs - 16.48 GBP
Packaging method by the manufacturerTube = 10 pcsCardboard = 60 pcs