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Manufacturer | MICROCHIP TECHNOLOGY | |
Type of transistor | IGBT | |
Technology | NPT, POWER MOS 8® | |
Collector-emitter voltage | 650V | |
Collector current | 100A | |
Power dissipation | 892W | |
Case | T-Max | |
Gate-emitter voltage | ±30V | |
Pulsed collector current | 400A | |
Mounting | THT | |
Gate charge | 312nC | |
Kind of package | tube | |
Turn-on time | 105ns | |
Turn-off time | 336ns |