+1 500 000 products in offer

7000 packages per day

+300 000 clients from 150 countries

Quick Buy Favourites
Cart

Due to air traffic closures or restrictions in the Middle East region, we would like to inform you of supply difficulties and the possibility of order delays.
We apologise for any inconvenience.

IXA20PG1200DHGLB

Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV

Documentation EN
Documentation EN
Product family

Manufacturer: IXYS

Manufacturer part number:
IXA20PG1200DHGLB
TME Symbol:
IXA20PG1200DHGLB

Specification

Manufacturer
IXYS
Type of semiconductor module
IGBT
Semiconductor structure
diode/transistor
Topology
IGBT half-bridge
Max. off-state voltage
1.2kV
Collector current
23A
Case
SMPD-B
Electrical mounting
SMT
Gate-emitter voltage
±20V
Pulsed collector current
45A
Power dissipation
130W
Technology
ISOPLUS™, Sonic FRD™
Gross weight7.983 g
Certificates
See other products in this category: IGBT modules IXYS,
*
IXA20PG1200DHGLB
22 in TME stock
Net price for quantities from 1 pcs - 9.88 USDGross price for quantities from 1 pcs - 9.88 USD
Net price for quantities from 3 pcs - 8.67 USDGross price for quantities from 3 pcs - 8.67 USD
Net price for quantities from 10 pcs - 8.25 USDGross price for quantities from 10 pcs - 8.25 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Product available till the stock lasts
Packaging method by the manufacturerTube = 20 pcs