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Due to air traffic closures or restrictions in the Middle East region, we would like to inform you of supply difficulties and the possibility of order delays.
We apologise for any inconvenience.

MDNA360UB2200PTED

Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw


Manufacturer: IXYS

Manufacturer part number:
MDNA360UB2200PTED
TME Symbol:
MDNA360UB2200PTED

Specification

Manufacturer
IXYS
Type of semiconductor module
IGBT
Semiconductor structure
diode/transistor
Topology
boost chopper, NTC thermistor, three-phase diode bridge
Max. off-state voltage
1.7kV
Collector current
135A
Case
E2-Pack
Electrical mounting
Press-in PCB
Gate-emitter voltage
±20V
Pulsed collector current
280A
Mechanical mounting
screw
Gross weight100 g
Certificates
See other products in this category: IGBT modules IXYS,
*
MDNA360UB2200PTED
0 in TME stock
Net price for quantities from 1 pcs - 162.66 EURGross price for quantities from 1 pcs - 162.66 EUR
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.