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A1P35S12M3

Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 35A


Manufacturer: STMicroelectronics

Manufacturer part number:
A1P35S12M3
TME Symbol:
A1P35S12M3

Specification

Manufacturer
STMicroelectronics
Type of semiconductor module
IGBT
Semiconductor structure
transistor/transistor
Topology
IGBT half-bridge x3, NTC thermistor
Max. off-state voltage
1.2kV
Collector current
35A
Case
ACEPACK™1
Application
Inverter, motors
Electrical mounting
Press-in PCB
Gate-emitter voltage
±20V
Pulsed collector current
70A
Power dissipation
250W
Mechanical mounting
screw
Gross weight24.84 g
Certificates
See other products in this category: IGBT modules STMicroelectronics,
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A1P35S12M3
12 in TME stock
Net price for quantities from 1 pcs - 51.56 USDGross price for quantities from 1 pcs - 64.45 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Product available till the stock lasts
Packaging method by the manufacturerCardboard = 18 pcs