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Manufacturer	IXYS
Type of semiconductor module	MOSFET transistor
Semiconductor structure	single transistor
Drain-source voltage	-100V
Drain current	-210A
Case	SOT227B
Electrical mounting	screw
Polarisation	unipolar
On-state resistance	7.5mΩ
Pulsed drain current	-800A
Power dissipation	830W
Technology	TrenchP™
Kind of channel	enhancement
Gate charge	740nC
Reverse recovery time	200ns
Gate-source voltage	±15V
Mechanical mounting	screw

IXTN210P10T

Module; single transistor; -100V; -210A; SOT227B; screw; Idm: -800A

Specification