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MKI50-12F7

Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 350W

Manufacturer: IXYS

Manufacturer part number:
MKI50-12F7
TME Symbol:
MKI50-12F7

Specification

Manufacturer
IXYS
Type of semiconductor module
IGBT
Semiconductor structure
transistor/transistor
Topology
H-bridge
Max. off-state voltage
1.2kV
Collector current
45A
Case
E2-Pack
Application
motors
Electrical mounting
Press-in PCB
Gate-emitter voltage
±20V
Pulsed collector current
100A
Power dissipation
350W
Technology
HiPerFRED™, NPT
Mechanical mounting
screw
Gross weight10 g
Certificates
See other products in this category: IGBT modules IXYS,
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MKI50-12F7
0 in TME stock
Net price for quantities from 1 pcs - 137.14 EURGross price for quantities from 1 pcs - 171.43 EUR
Net price for quantities from 3 pcs - 121.13 EURGross price for quantities from 3 pcs - 151.41 EUR
Net price for quantities from 6 pcs - 110.12 EURGross price for quantities from 6 pcs - 137.64 EUR
No. of pieces (Multiplicity: 1)