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SI2305CDS-T1-GE3

Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -3.5A; Idm: -20A

Manufacturer: VISHAY

Manufacturer part number:
SI2305CDS-T1-GE3
TME Symbol:
SI2305CDS

Specification

Manufacturer
VISHAY
Type of transistor
P-MOSFET
Technology
TrenchFET®
Polarisation
unipolar
Drain-source voltage
-8V
Drain current
-3.5A
Pulsed drain current
-20A
Power dissipation
1.1W
Case
SOT23
Gate-source voltage
±8V
On-state resistance
65mΩ
Mounting
SMD
Gate charge
30nC
Kind of package
reel, tape
Kind of channel
enhancement
Gross weight0.022 g
Certificates

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SI2305CDS-T1-GE3
Product withdrawn from the offer
Use the specification table below to search for similar products
Packaging method by the manufacturerReel = 3 000 pcs