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Manufacturer	NEXPERIA
Type of transistor	P-MOSFET
Polarisation	unipolar
Drain-source voltage	-50V
Drain current	-120mA
Power dissipation	0.42W
Case	SOT23, TO236AB
Gate-source voltage	±20V
On-state resistance	13.5Ω
Mounting	SMD
Gate charge	0.35nC
Kind of package	reel, tape
Kind of channel	enhancement

BSS84AK,215

Transistor: P-MOSFET; unipolar; -50V; -0.12A; 420mW; SOT23,TO236AB

Specification

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