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Manufacturer	VISHAY
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	30V
Drain current	1.4A
Pulsed drain current	6A
Power dissipation	0.3W
Case	SC70, SOT323
Gate-source voltage	±12V
On-state resistance	132mΩ
Mounting	SMD
Gate charge	4.1nC
Kind of package	reel, tape
Kind of channel	enhancement
Version	ESD

SI1308EDL-T1-GE3 VISHAY - Transistor N-MOSFET

Transistor: N-MOSFET; unipolar; 30V; 1.4A; Idm: 6A; 0.3W; ESD

Manufacturer part number:
SI1308EDL-T1-GE3

TME Symbol:
SI1308EDL-T1-GE3

Specification

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