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APT40GR120B2D30

Transistor: IGBT; NPT; 1.2kV; 40A; 500W; T-Max


Manufacturer: MICROCHIP TECHNOLOGY

Manufacturer part number:
APT40GR120B2D30
TME Symbol:
APT40GR120B2D30

Specification

Manufacturer
MICROCHIP TECHNOLOGY
Type of transistor
IGBT
Technology
NPT, POWER MOS 8®
Collector-emitter voltage
1.2kV
Collector current
40A
Power dissipation
500W
Case
T-Max
Gate-emitter voltage
±30V
Pulsed collector current
160A
Mounting
THT
Gate charge
0.21µC
Kind of package
tube
Turn-on time
47ns
Turn-off time
232ns
Features of semiconductor devices
integrated anti-parallel diode
Part status
Not recommended for new designs
Gross weight6.76 g
Certificates

Transfer Multisort Elektronik Sp. z o.o. is an importer of products of this brand

See other products in this category: THT IGBT transistors MICROCHIP TECHNOLOGY,
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APT40GR120B2D30
60 in TME stock
Net price for quantities from 1 pcs - 23.34 EURGross price for quantities from 1 pcs - 23.34 EUR
Net price for quantities from 3 pcs - 20.87 EURGross price for quantities from 3 pcs - 20.87 EUR
Net price for quantities from 10 pcs - 18.40 EURGross price for quantities from 10 pcs - 18.40 EUR
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Product available till the stock lasts
Packaging method by the manufacturerTube = 30 pcs