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MCNA120UI2200TED

Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 2.2kV

Product family

Manufacturer: IXYS

Manufacturer part number:
MCNA120UI2200TED
TME Symbol:
MCNA120UI2200TED

Specification

Manufacturer
IXYS
Type of semiconductor module
IGBT
Semiconductor structure
diode/thyristor/IGBT
Topology
3-phase diode-thyristor bridge, boost chopper, NTC thermistor
Max. off-state voltage
2.2kV
Collector current
80A
Case
E2-Pack
Application
Inverter
Electrical mounting
Press-in PCB
Gate-emitter voltage
±20V
Pulsed collector current
150A
Mechanical mounting
screw
Gross weight10 g
Certificates
See other products in this category: IGBT modules IXYS,
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MCNA120UI2200TED
0 in TME stock
Net price for quantities from 1 pcs - 158.00 EURGross price for quantities from 1 pcs - 158.00 EUR
Net price for quantities from 3 pcs - 141.00 EURGross price for quantities from 3 pcs - 141.00 EUR
Net price for quantities from 6 pcs - 126.00 EURGross price for quantities from 6 pcs - 126.00 EUR
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.