MII200-12A4
Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 180A
Manufacturer: IXYS
Manufacturer part number:
MII200-12A4
TME Symbol:
MII200-12A4
Specification
Manufacturer | IXYS | |
Type of semiconductor module | IGBT | |
Semiconductor structure | transistor/transistor | |
Topology | IGBT half-bridge | |
Max. off-state voltage | 1.2kV | |
Collector current | 180A | |
Case | Y3-DCB | |
Application | motors | |
Electrical mounting | FASTON connectors, screw | |
Gate-emitter voltage | ±20V | |
Pulsed collector current | 360A | |
Power dissipation | 1.13kW | |
Technology | NPT | |
Mechanical mounting | screw |
Gross weight10 g
Certificates
See other products in this category: IGBT modules IXYS,
* MII200-12A4No. of pieces (Multiplicity: 1)
0 in TME stock
Net price for quantities from 1 pcs - 212.32 EURGross price for quantities from 1 pcs - 212.32 EUR
Net price for quantities from 4 pcs - 190.29 EURGross price for quantities from 4 pcs - 190.29 EUR
Net price for quantities from 6 pcs - 171.26 EURGross price for quantities from 6 pcs - 171.26 EUR