BGH50N65HS1
Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Manufacturer: BASiC SEMICONDUCTOR
Manufacturer part number:
BGH50N65HS1
TME Symbol:
BGH50N65HS1
Specification
Manufacturer | BASiC SEMICONDUCTOR | |
Type of transistor | IGBT | |
Technology | Field Stop, SiC SBD, Trench | |
Collector-emitter voltage | 650V | |
Collector current | 50A | |
Power dissipation | 357W | |
Case | TO247-3 | |
Gate-emitter voltage | ±20V | |
Pulsed collector current | 200A | |
Mounting | THT | |
Gate charge | 308nC | |
Kind of package | tube | |
Turn-on time | 54ns | |
Turn-off time | 256ns | |
Features of semiconductor devices | integrated anti-parallel diode |
Gross weight6.26 g
Certificates
Transfer Multisort Elektronik Sp. z o.o. is an importer of products of this brand
See other products in this category: THT IGBT transistors BASiC SEMICONDUCTOR,
* BGH50N65HS1No. of pieces (Multiplicity: 1)
34 in TME stock
Net price for quantities from 1 pcs - 9.53 EURGross price for quantities from 1 pcs - 9.53 EUR
Net price for quantities from 5 pcs - 8.57 EURGross price for quantities from 5 pcs - 8.57 EUR
Net price for quantities from 30 pcs - 7.57 EURGross price for quantities from 30 pcs - 7.57 EUR
Net price for quantities from 150 pcs - 6.34 EURGross price for quantities from 150 pcs - 6.34 EUR
Net price for quantities from 600 pcs - 6.12 EURGross price for quantities from 600 pcs - 6.12 EUR
Product available till the stock lasts
Packaging method by the manufacturerTube = 30 pcs