IXFN26N120P
Module; single transistor; 1.2kV; 23A; SOT227B; screw; Idm: 60A
Manufacturer: IXYS
Manufacturer part number:
IXFN26N120P
TME Symbol:
IXFN26N120P
Specification
Manufacturer | IXYS | |
Type of semiconductor module | MOSFET transistor | |
Semiconductor structure | single transistor | |
Drain-source voltage | 1.2kV | |
Drain current | 23A | |
Case | SOT227B | |
Electrical mounting | screw | |
Polarisation | unipolar | |
On-state resistance | 0.5Ω | |
Pulsed drain current | 60A | |
Power dissipation | 695W | |
Technology | HiPerFET™, Polar™ | |
Kind of channel | enhancement | |
Gate charge | 255nC | |
Reverse recovery time | 300ns | |
Gate-source voltage | ±40V | |
Mechanical mounting | screw |
Gross weight37.12 g
Certificates
See other products in this category: Transistor modules IXYS,
* IXFN26N120PNo. of pieces (Multiplicity: 1)
7 in TME stock
Net price for quantities from 1 pcs - 37.45 EURGross price for quantities from 1 pcs - 37.45 EUR
Net price for quantities from 3 pcs - 33.06 EURGross price for quantities from 3 pcs - 33.06 EUR
Net price for quantities from 10 pcs - 29.70 EURGross price for quantities from 10 pcs - 29.70 EUR
Product available till the stock lasts
Packaging method by the manufacturerTube = 10 pcs