IXFN80N60P3
Module; single transistor; 600V; 66A; SOT227B; screw; Idm: 200A
Manufacturer: IXYS
Manufacturer part number:
IXFN80N60P3
TME Symbol:
IXFN80N60P3
Specification
Manufacturer | IXYS | |
Type of semiconductor module | MOSFET transistor | |
Semiconductor structure | single transistor | |
Drain-source voltage | 600V | |
Drain current | 66A | |
Case | SOT227B | |
Electrical mounting | screw | |
Polarisation | unipolar | |
On-state resistance | 77mΩ | |
Pulsed drain current | 200A | |
Power dissipation | 960W | |
Technology | HiPerFET™, Polar3™ | |
Kind of channel | enhancement | |
Gate charge | 0.19µC | |
Reverse recovery time | 250ns | |
Gate-source voltage | ±40V | |
Mechanical mounting | screw |
Gross weight37.1 g
Certificates
See other products in this category: Transistor modules IXYS,
* IXFN80N60P3No. of pieces (Multiplicity: 1)
0 in TME stock
Net price for quantities from 1 pcs - 28.83 EURGross price for quantities from 1 pcs - 28.83 EUR
Net price for quantities from 10 pcs - 23.44 EURGross price for quantities from 10 pcs - 23.44 EUR
Net price for quantities from 20 pcs - 21.57 EURGross price for quantities from 20 pcs - 21.57 EUR
Net price for quantities from 50 pcs - 19.99 EURGross price for quantities from 50 pcs - 19.99 EUR
Packaging method by the manufacturerTube = 10 pcs