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B2M080120R

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 26A; Idm: 68A; 164W

Manufacturer: BASiC SEMICONDUCTOR

Manufacturer part number:
B2M080120R
TME Symbol:
B2M080120R

Specification

Manufacturer
BASiC SEMICONDUCTOR
Type of transistor
N-MOSFET
Technology
SiC
Polarisation
unipolar
Drain-source voltage
1.2kV
Drain current
26A
Pulsed drain current
68A
Power dissipation
164W
Case
TO263-7
Gate-source voltage
-4...18V
On-state resistance
80mΩ
Mounting
SMD
Gate charge
46nC
Kind of package
reel, tape
Kind of channel
enhancement
Features of semiconductor devices
Kelvin terminal
Gross weight1 g
Certificates

Transfer Multisort Elektronik Sp. z o.o. is an importer of products of this brand

See other products in this category: SMD N channel transistors BASiC SEMICONDUCTOR,
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B2M080120R
0 in TME stock
Net price for quantities from 1 pcs - 1.72 EURGross price for quantities from 1 pcs - 2.05 EUR
Net price for quantities from 10 pcs - 1.54 EURGross price for quantities from 10 pcs - 1.85 EUR
Net price for quantities from 100 pcs - 1.37 EURGross price for quantities from 100 pcs - 1.64 EUR
Net price for quantities from 400 pcs - 1.23 EURGross price for quantities from 400 pcs - 1.47 EUR
Net price for quantities from 800 pcs - 1.14 EURGross price for quantities from 800 pcs - 1.37 EUR
No. of pieces (Multiplicity: 1)