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Manufacturer | BASiC SEMICONDUCTOR | |
Type of transistor | IGBT | |
Technology | Field Stop, SiC SBD, Trench | |
Collector-emitter voltage | 650V | |
Collector current | 75A | |
Power dissipation | 405W | |
Case | TO247-3 | |
Gate-emitter voltage | ±20V | |
Pulsed collector current | 300A | |
Mounting | THT | |
Gate charge | 444nC | |
Kind of package | tube | |
Turn-on time | 104ns | |
Turn-off time | 376ns | |
Features of semiconductor devices | integrated anti-parallel diode |