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Košarica

GD200HFX65C8S

Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A

Proizvođač: STARPOWER SEMICONDUCTOR

Oznaka proizvođača:
GD200HFX65C8S
TME Simbol:
GD200HFX65C8S

Specifikacija

Manufacturer
STARPOWER SEMICONDUCTOR
Type of semiconductor module
IGBT
Semiconductor structure
transistor/transistor
Topology
IGBT half-bridge
Max. off-state voltage
650V
Collector current
200A
Case
C8 48mm
Electrical mounting
FASTON connectors, screw
Gate-emitter voltage
±20V
Pulsed collector current
400A
Technology
Trench FS IGBT
Mechanical mounting
screw
Težina bruto200 g
Certifikati
Pogledajte ostale proizvode u ovoj kategoriji: Moduli IGBT STARPOWER SEMICONDUCTOR,
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GD200HFX65C8S
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