APTM100A13SCG
Module; SiC diode/transistor; 1kV; 49A; SP6C; Idm: 240A; 1.25kW
Tootja: MICROCHIP TECHNOLOGY
Tootja tähistus:
APTM100A13SCG
TME Sümbol:
APTM100A13SCG
Spetsifikatsioon
Manufacturer | MICROCHIP TECHNOLOGY | ||
Type of semiconductor module | MOSFET transistor | ||
Semiconductor structure | SiC diode/transistor | ||
Drain-source voltage | 1kV | ||
Drain current | 49A | ||
Case | SP6C | ||
Topology | MOSFET half-bridge + serial diodes + parrallel diodes | ||
Electrical mounting | FASTON connectors, screw | ||
On-state resistance | 156mΩ | ||
Pulsed drain current | 240A | ||
Power dissipation | 1,25kW | ||
Technology | POWER MOS 7®, SiC | ||
Gate-source voltage | ±30V | ||
Mechanical mounting | screw |
Brutomass300 g
Sertifikaadid
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