APTM120DA30CT1G
Module; SiC diode/transistor; 1.2kV; 23A; SP1; Press-in PCB; 657W
Tootja: MICROCHIP TECHNOLOGY
Tootja tähistus:
APTM120DA30CT1G
TME Sümbol:
APTM120DA30CT1G
Spetsifikatsioon
Manufacturer | MICROCHIP TECHNOLOGY | ||
Type of semiconductor module | MOSFET transistor | ||
Semiconductor structure | SiC diode/transistor | ||
Drain-source voltage | 1,2kV | ||
Drain current | 23A | ||
Case | SP1 | ||
Topology | boost chopper, NTC thermistor | ||
Electrical mounting | Press-in PCB | ||
On-state resistance | 0,36Ω | ||
Pulsed drain current | 195A | ||
Power dissipation | 657W | ||
Technology | POWER MOS 8®, SiC | ||
Gate-source voltage | ±30V | ||
Mechanical mounting | screw |
Brutomass80 g
Sertifikaadid
Transfer Multisort Elektronik Sp. z o.o. on antud kaubamärgi maaletooja
Vaata selle kategooria ülejäänud tooteid: Transistor modules MICROCHIP TECHNOLOGY,
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Netohind koguste puhul alates 12 tk - 65.26 EURKoguste brutohind alates 12 tk - 80.92 EUR
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