APTM120U10SCAVG
Module; SiC diode/transistor; 1.2kV; 86A; SP6; screw; Idm: 464A
Tootja: MICROCHIP TECHNOLOGY
Tootja tähistus:
APTM120U10SCAVG
TME Sümbol:
APTM120U10SCAVG
Spetsifikatsioon
Manufacturer | MICROCHIP TECHNOLOGY | ||
Type of semiconductor module | MOSFET transistor | ||
Semiconductor structure | SiC diode/transistor | ||
Drain-source voltage | 1,2kV | ||
Drain current | 86A | ||
Case | SP6 | ||
Topology | single transistor + series diode - parrallel diode | ||
Electrical mounting | screw | ||
On-state resistance | 0,12Ω | ||
Pulsed drain current | 464A | ||
Power dissipation | 3,29kW | ||
Technology | POWER MOS 7®, SiC | ||
Gate-source voltage | ±30V | ||
Mechanical mounting | screw |
Brutomass300 g
Sertifikaadid
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