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Manufacturer | BASiC SEMICONDUCTOR | ||
Type of transistor | N-MOSFET | ||
Technology | SiC | ||
Polarisation | unipolar | ||
Drain-source voltage | 1,2kV | ||
Drain current | 60A | ||
Pulsed drain current | 190A | ||
Power dissipation | 375W | ||
Case | TO247PLUS-4 | ||
Gate-source voltage | -4...18V | ||
On-state resistance | 50mΩ | ||
Mounting | THT | ||
Gate charge | 40nC | ||
Kind of package | tube | ||
Kind of channel | enhancement | ||
Features of semiconductor devices | Kelvin terminal |