MSCSM120AM027CD3AG
Module; SiC diode/transistor; 1.2kV; 584A; D3; Idm: 1400A; 2.97kW
Tootja: MICROCHIP TECHNOLOGY
Tootja tähistus:
MSCSM120AM027CD3AG
TME Sümbol:
MSCSM120AM027CD3AG
Spetsifikatsioon
Manufacturer | MICROCHIP TECHNOLOGY | ||
Type of semiconductor module | MOSFET transistor | ||
Semiconductor structure | SiC diode/transistor | ||
Drain-source voltage | 1,2kV | ||
Drain current | 584A | ||
Case | D3 | ||
Topology | MOSFET half-bridge + parrallel diodes | ||
Electrical mounting | FASTON connectors, screw | ||
On-state resistance | 3,5mΩ | ||
Pulsed drain current | 1400A | ||
Power dissipation | 2,97kW | ||
Technology | SiC | ||
Mechanical mounting | screw |
Brutomass350 g
Sertifikaadid
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