VMO550-01F
Module; single transistor; 100V; 590A; Y3-DCB; Idm: 2.36kA; 2.2kW
Tootja: IXYS
Tootja tähistus:
VMO550-01F
TME Sümbol:
VMO550-01F
Spetsifikatsioon
Manufacturer | IXYS | ||
Type of semiconductor module | MOSFET transistor | ||
Semiconductor structure | single transistor | ||
Drain-source voltage | 100V | ||
Drain current | 590A | ||
Case | Y3-DCB | ||
Electrical mounting | FASTON connectors, screw | ||
Polarisation | unipolar | ||
On-state resistance | 2,1mΩ | ||
Pulsed drain current | 2,36kA | ||
Power dissipation | 2,2kW | ||
Technology | HiPerFET™ | ||
Kind of channel | enhancement | ||
Gate charge | 2µC | ||
Reverse recovery time | 300ns | ||
Gate-source voltage | ±20V | ||
Features of semiconductor devices | Kelvin terminal | ||
Mechanical mounting | screw |
Brutomass50 g
Sertifikaadid
Vaata selle kategooria ülejäänud tooteid: Transistor modules IXYS,
* VMO550-01FTükkide arv (Mitmekordsus: 1)
0 TME laos
Netohind koguste puhul alates 1 tk - 550.77 USDKoguste brutohind alates 1 tk - 682.95 USD
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