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IRFBE30LPBF

Transistor: N-MOSFET; unipolar; 800V; 2.6A; Idm: 16A; 125W

Manufacturer: VISHAY

Manufacturer part number:
IRFBE30LPBF
TME Symbol:
IRFBE30LPBF

Specification

Manufacturer
VISHAY
Type of transistor
N-MOSFET
Polarisation
unipolar
Drain-source voltage
800V
Drain current
2.6A
Pulsed drain current
16A
Power dissipation
125W
Case
I2PAK, TO262
Gate-source voltage
±20V
On-state resistance
Mounting
THT
Gate charge
78nC
Kind of package
tube
Kind of channel
enhancement
Gross weight2 g
Certificates
See other products in this category: THT N channel transistors VISHAY,
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IRFBE30LPBF
0 in TME stock
Net price for quantities from 1 pcs - 3.01 USDGross price for quantities from 1 pcs - 3.01 USD
Net price for quantities from 5 pcs - 2.25 USDGross price for quantities from 5 pcs - 2.25 USD
Net price for quantities from 10 pcs - 1.72 USDGross price for quantities from 10 pcs - 1.72 USD
Net price for quantities from 100 pcs - 1.19 USDGross price for quantities from 100 pcs - 1.19 USD
No. of pieces (Multiplicity: 1)