IXFN30N120P
Module; single transistor; 1.2kV; 30A; SOT227B; screw; Idm: 75A
Manufacturer: IXYS
Manufacturer part number:
IXFN30N120P
TME Symbol:
IXFN30N120P
Specification
Manufacturer | IXYS | |
Type of semiconductor module | MOSFET transistor | |
Semiconductor structure | single transistor | |
Drain-source voltage | 1.2kV | |
Drain current | 30A | |
Case | SOT227B | |
Electrical mounting | screw | |
Polarisation | unipolar | |
On-state resistance | 0.35Ω | |
Pulsed drain current | 75A | |
Power dissipation | 890W | |
Technology | HiPerFET™, Polar™ | |
Kind of channel | enhancement | |
Gate charge | 310nC | |
Reverse recovery time | 300ns | |
Gate-source voltage | ±40V | |
Mechanical mounting | screw |
Gross weight36.6 g
Certificates
See other products in this category: Transistor modules IXYS,
* IXFN30N120PNo. of pieces (Multiplicity: 1)
0 in TME stock
Net price for quantities from 1 pcs - 69.91 EURGross price for quantities from 1 pcs - 83.89 EUR
Net price for quantities from 3 pcs - 61.81 EURGross price for quantities from 3 pcs - 74.17 EUR
Net price for quantities from 10 pcs - 55.51 EURGross price for quantities from 10 pcs - 66.61 EUR
Packaging method by the manufacturerTube = 10 pcs