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Manufacturer | IXYS | |
Type of semiconductor module | MOSFET transistor | |
Semiconductor structure | single transistor | |
Drain-source voltage | 100V | |
Drain current | 590A | |
Case | Y3-DCB | |
Electrical mounting | FASTON connectors, screw | |
Polarisation | unipolar | |
On-state resistance | 2,1mΩ | |
Pulsed drain current | 2,36kA | |
Power dissipation | 2,2kW | |
Technology | HiPerFET™ | |
Kind of channel | enhancement | |
Gate charge | 2µC | |
Reverse recovery time | 300ns | |
Gate-source voltage | ±20V | |
Features of semiconductor devices | Kelvin terminal | |
Mechanical mounting | screw |