A2P75S12M3
Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 75A
Ražotājs: STMicroelectronics
Oriģināls simbols:
A2P75S12M3
TME Simbols:
A2P75S12M3
Specifikācija
Manufacturer | STMicroelectronics | |
Type of semiconductor module | IGBT | |
Semiconductor structure | transistor/transistor | |
Topology | IGBT half-bridge x3, NTC thermistor | |
Max. off-state voltage | 1,2kV | |
Collector current | 75A | |
Case | ACEPACK™2 | |
Application | Inverter, motors | |
Electrical mounting | Press-in PCB | |
Gate-emitter voltage | ±20V | |
Pulsed collector current | 150A | |
Power dissipation | 454,5W | |
Mechanical mounting | screw |
Masa bruto50 g
Sertifikācija
Skatiet citus produktus šajā kategorijā: Moduļi IGBT STMicroelectronics
* A2P75S12M3