APTCV50H60T3G
Module; transistor/transistor; 600V; 38A; SP3; Press-in PCB; 290W
Ražotājs: MICROCHIP TECHNOLOGY
Oriģināls simbols:
APTCV50H60T3G
TME Simbols:
APTCV50H60T3G
Specifikācija
Manufacturer | MICROCHIP TECHNOLOGY | |
Type of semiconductor module | MOSFET / IGBT transistor | |
Semiconductor structure | transistor/transistor | |
Drain-source voltage | 600V | |
Drain current | 38A | |
Case | SP3 | |
Topology | H-bridge, NTC thermistor | |
Electrical mounting | Press-in PCB | |
On-state resistance | 45mΩ | |
Pulsed drain current | 130A | |
Power dissipation | 290W | |
Technology | Field Stop, SJ-MOSFET, Trench | |
Gate-source voltage | ±20V | |
Mechanical mounting | screw | |
Collector current | 50A |
Masa bruto110 g
Sertifikācija
Transfer Multisort Elektronik Sp. z o.o. ir minētās prečzīmes importētājs
Skatiet citus produktus šajā kategorijā: Transistor modules MICROCHIP TECHNOLOGY,
* APTCV50H60T3G
0 TME noliktavā
Gabalu skaits (Daudzkārtīgums: 13)
Neto cena par daudzumiem no 13 gab - 60.34 GBPBruto cena par daudzumiem no 13 gab - 73.00 GBP